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11. 发明授权

US5919713A Semiconductor device and method of making 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5919713A
公开(公告)日：1999-07-06
申请号：US355481
申请日：1994-12-14
申请人： Masanori Ishii , Hidetake Suzuki , Yoji Suzuki
发明人： Masanori Ishii , Hidetake Suzuki , Yoji Suzuki
IPC分类号： H01L21/302 , B05D7/14 , C08G59/50 , C08G59/54 , H01L21/301 , H01L21/3065 , H01L21/461 , H01L21/68 , H01L21/70 , H01L21/78 , H01L23/544
CPC分类号： H01L21/6835 , B05D7/146 , C08G59/50 , C08G59/5006 , C08G59/54 , H01L21/78 , H01L23/544 , H01L24/96 , H01L2221/68359 , H01L2221/68368 , H01L2223/54473 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01024 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10158 , H01L2924/10329 , H01L2924/10336 , H01L2924/12044 , H01L2924/13064 , H01L2924/30107
摘要： A method for fabricating a semiconductor device including the steps of forming a plurality of semiconductor chips on a semiconductor substrate, forming a connection part such that the connection part connects the semiconductor chips with each other across a dicing line, bonding the semiconductor substrate upon a support substrate, removing the dicing region while maintaining the semiconductor chips in a state such that the semiconductor chips are bonded upon the support substrate, detaching the plurality of semiconductor chips from the support substrate while maintaining an alignment between the semiconductor chips, and separating the semiconductor chips from each other by eliminating the connection part.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成多个半导体芯片，形成连接部分，使得连接部分跨越切割线将半导体芯片彼此连接，将半导体衬底接合到支撑体衬底，去除切割区域，同时保持半导体芯片处于使得半导体芯片接合在支撑衬底上的状态，将多个半导体芯片从支撑衬底分离，同时保持半导体芯片之间的对准，并分离半导体芯片通过消除连接部分彼此相互抵消。

12. 发明授权

US5153308A S-sulfonated calcitonin derivatives 失效
标题翻译： S-SULFONATED CALCITONIN DORIVATIVES
公开(公告)号：US5153308A
公开(公告)日：1992-10-06
申请号：US362855
申请日：1989-06-07
申请人： Takashi Sugiyama , Takashi Kamimura , Kenichi Masuda , Yoji Suzuki
发明人： Takashi Sugiyama , Takashi Kamimura , Kenichi Masuda , Yoji Suzuki
IPC分类号： A61K38/23 , A61K38/00 , A61P3/00 , A61P19/10 , A61P43/00 , C07K1/02 , C07K1/113 , C07K14/575 , C07K14/585
CPC分类号： C07K14/585 , A61K38/00
摘要： Calcitonin derivatives wherein at least one of the first cysteine residue and the seventh cysteine residue is S-sulfonated; processes for the production of the calcitonin derivatives comprising the steps of reacting a calcitonin with a sulfite anion or both a sulfite anion and an oxidizing agent to form the S-sulfonated derivative, and recovering the sulfonated calcitonin derivative; a pharmaceutical composition comprising the S-sulfonated calcitonin derivative; and a method of treating a patient having a disease wherein a decrease of a serum calcium level is desired, by administering the S-sulfonated calcitonin derivative to the patient.

13. 发明授权

US4668782A Anhydrous crystalline or crystalline hemihydrate monohydrate or trihydrate of cephalosporin derivative 失效
标题翻译：无水晶体或结晶半水合物一水合物或三水合物的头孢菌素衍生物
公开(公告)号：US4668782A
公开(公告)日：1987-05-26
申请号：US817946
申请日：1985-12-17
申请人： Yataro Ichikawa , Eishin Yoshisato , Toshiaki Harada , Hiroshi Imai , Yoji Suzuki
发明人： Yataro Ichikawa , Eishin Yoshisato , Toshiaki Harada , Hiroshi Imai , Yoji Suzuki
IPC分类号： C07D519/06 , A61K31/545 , A61P31/04 , C07D501/46 , C07D519/00
CPC分类号： C07D501/46 , C07D519/00 , Y02P20/55
摘要： An anhydrous crystalline, or crystalline hemihydrate, monohydrate or trihydrate of cephalosporin derivative of (6R,7R)-7-[(Z)-2-(2-aminothiazole-4-yl)-2-methoxy-iminoacetoamido]-3(1-quinuclidiniummethyl)-3-cephem-4-carboxylate. These crystalline materials can maintain outstanding stability for a very long period of time and afford excellent practical uses as pharmaceutical compounds.
摘要翻译： PCT No.PCT / JP85 / 00250 Sec。 371日期1985年12月17日第 102（e）1985年12月17日日期PCT提交1985年5月1日PCT公布。公开号WO85 / 05107 日期：1985年11月21日。（6R，7R）-7 - [（Z）-2-（2-氨基噻唑-4-基）-2-甲氧基的无水结晶或结晶半水合物头孢菌素衍生物的一水合物或三水合物 -3-（1-喹喔啉甲基）-3-头孢烯-4-羧酸酯。这些结晶材料可以在很长一段时间内保持优异的稳定性，并且作为药物化合物提供优异的实际用途。

14. 发明授权

US07294203B2 Heat shielding member of silicon single crystal pulling system 有权
标题翻译：硅单晶拉制系统的隔热构件
公开(公告)号：US07294203B2
公开(公告)日：2007-11-13
申请号：US10527566
申请日：2003-09-12
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
摘要翻译：在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件，并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部，设置在管部的下部的隆起部，以及设置在隆起部的内侧的环状积蓄部。蓄热部的热导率为5W /（m·℃）以下，其内周面为10mm以上且d / 2以上的高度（H <1），或硅单晶棒的直径称为d，硅单晶棒的外周面与蓄热的内周面之间的最小距离（W 1> 1）较小部分形成为10mm以上且0.2d以下，外周面的上缘和蓄热部的最下部之间的垂直距离（H 2 2 N）为 10mm以上且d以下，石英坩埚的内周面与蓄热部的外周面之间的最小距离（W 2 2 <2）为20mm以上，d / 4以下。

15. 发明申请

US20060124052A1 Heat shielding member of silicon single crystal pulling system 有权
标题翻译：硅单晶拉制系统的隔热构件
公开(公告)号：US20060124052A1
公开(公告)日：2006-06-15
申请号：US10527566
申请日：2003-09-12
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
摘要翻译：在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件，并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部，设置在管部的下部的隆起部，以及设置在隆起部的内侧的环状积蓄部。蓄热部的热导率为5W /（m·℃）以下，其内周面为10mm以上且d / 2以上的高度（H <1），或硅单晶棒的直径称为d，硅单晶棒的外周面与蓄热的内周面之间的最小距离（W 1> 1）较小部分形成为10mm以上且0.2d以下，外周面的上缘和蓄热部的最下部之间的垂直距离（H 2 2 N）为 10mm以上且d以下，石英坩埚的内周面与蓄热部的外周面之间的最小距离（W 2 2 <2）为20mm以上，d / 4以下。

16. 发明授权

US06930334B2 High frequency semiconductor device 失效
标题翻译：高频半导体器件
公开(公告)号：US06930334B2
公开(公告)日：2005-08-16
申请号：US10301816
申请日：2002-11-22
申请人： Yoji Suzuki , Keiji Minetani
发明人： Yoji Suzuki , Keiji Minetani
IPC分类号： H01L23/12 , H01L21/338 , H01L21/60 , H01L21/822 , H01L23/522 , H01L23/66 , H01L25/065 , H01L27/04 , H01L29/778 , H01L29/812 , H01L29/80 , H01L23/04 , H01L23/34 , H01L31/112 , H01L23/68
CPC分类号： H01L23/66 , H01L23/5223 , H01L23/5227 , H01L24/32 , H01L24/48 , H01L25/0652 , H01L2223/6627 , H01L2224/05599 , H01L2224/16225 , H01L2224/16235 , H01L2224/16238 , H01L2224/32014 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73203 , H01L2224/73265 , H01L2224/85399 , H01L2224/92247 , H01L2924/00014 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/13064 , H01L2924/15311 , H01L2924/181 , H01L2924/1903 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/01031 , H01L2224/45015 , H01L2924/207
摘要： A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground potential; and a back face wiring provided on a back face side of the high frequency semiconductor chip. The back face wiring forms a high frequency transmission line together with the covering electrode functioning as a high frequency ground plate. A front face wiring may be provided on the front face side of the high frequency semiconductor chip to form a high frequency transmission line together with the covering electrode.
摘要翻译：一种包括高频半导体芯片的高频半导体器件，包括设置在高频半导体芯片的正面侧的有源区; 覆盖电极，设置在有源区并连接到地电位; 以及设置在高频半导体芯片的背面侧的背面布线。背面布线与用作高频接地板的覆盖电极一起形成高频传输线。可以在高频半导体芯片的正面侧设置正面布线，以与覆盖电极一起形成高频传输线。

17. 发明授权

US06627714B2 Method for producing an olefin type copolymer having a cyclic structure 有权
标题翻译：具有环状结构的烯烃类共聚物的制造方法
公开(公告)号：US06627714B2
公开(公告)日：2003-09-30
申请号：US09985488
申请日：2001-11-05
申请人： Shigeharu Yamamoto , Sakae Kamiyama , Toshifumi Takemori , Yoji Suzuki , Kazuhiko Mizuno , Yoko Furuyama , Hiroshi Yamazaki
发明人： Shigeharu Yamamoto , Sakae Kamiyama , Toshifumi Takemori , Yoji Suzuki , Kazuhiko Mizuno , Yoko Furuyama , Hiroshi Yamazaki
IPC分类号： C08F444
CPC分类号： C08F232/08 , C08F4/65912 , C08F210/02 , Y10S526/905 , Y10S526/916 , C08F4/65927 , C08F2500/03 , C08F232/04
摘要： An olefinic copolymer having a cyclic structure is prepared by copolymerizing a) ethylene (M1) and b) dicyclopentadiene or tricyclopentadiene (M2), and, optionally c) a cyclic olefin (M3), in the presence of a catalyst which contains a metallocene compound (A) having formula [1]: H2C(R′mCp)(R″nCp)MX2[1], wherein M is zirconium or hafnium, Cp has a cyclopentadienyl skeleton, each of R′ and R″ is a hydrocarbon group having 1 to 10 carbon atoms, each of two X's which may be the same or different from each other, is a halogen, a hydrogen, a hydrocarbon group having 1 to 20 carbon atoms, a halogenated hydrocarbon group, an alkylamino group, an alkoxy group, an aryloxy group of the formula —O—Ar—Yp, a thioalkyl group, or a thioaryl group of the formula —S—Ar—Yp; wherein Ar is an aromatic ring, Y is a halogen, a hydrogen, a hydrocarbon group having 1 to 20 carbon atoms, a halogenated hydrocarbon group, an alkoxy group, an alkylamino group, a cyano group or a nitro group, and p is an integer of from 1 to 5, and each of m and n is an integer of from 0 to 4, provided that m and n are not equal, and m+n is an integer of from 3 to 6, and an aluminoxane (B), is used.
摘要翻译：具有环状结构的烯烃共聚物通过在含有茂金属化合物的催化剂存在下共聚a）乙烯（M1）和b）二环戊二烯或三环戊二烯（M2），和任选地c）环状烯烃（M3）（A）具有式[1]：H2C（R'mCp）（R''nCp）MX2 [1]其中M为锆或铪，Cp为环戊二烯基骨架，R'和R“为烃具有1至10个碳原子的基团可以彼此相同或不同的两个X是卤素，氢，具有1至20个碳原子的烃基，卤代烃基，烷基氨基，烷氧基，式-O-Ar-Yp的芳氧基，式-S-Ar-Yp的硫代烷基或硫代芳基; 其中Ar为芳环，Y为卤素，氢，碳原子数1〜20的烃基，卤代烃基，烷氧基，烷基氨基，氰基或硝基，p为 m和n分别为1〜5，m和n为0〜4的整数，m和n不相等，m + n为3〜6的整数，铝氧烷（B），用来。

18. 发明授权

US5344764A Protein inhibitors of phospholipase A.sub.2 purified from inflammatory sites and production process 失效
标题翻译：从炎症部位纯化的磷脂酶A2蛋白抑制剂和生产工艺
公开(公告)号：US5344764A
公开(公告)日：1994-09-06
申请号：US47379
申请日：1993-04-16
申请人： Yorimasa Suwa , Atsushi Imaizumi , Masahiro Okada , Ichiro Kudo , Keizo Inoue , Yoji Suzuki
发明人： Yorimasa Suwa , Atsushi Imaizumi , Masahiro Okada , Ichiro Kudo , Keizo Inoue , Yoji Suzuki
IPC分类号： A61K38/00 , C07K14/47 , C12N15/12 , C12P21/06 , C07K3/00 , C12N5/00 , C12N15/00
CPC分类号： C07K14/4703 , A61K38/00
摘要： Protein inhibitors of phospholipase A.sub.2 purified from inflammatory sites which have an amino acid sequence given in FIGS. 3-1 through 3-3 or an amino acid sequence physiologically equivalent thereto, a process for preparation of said inhibitory protein wherein serum of mammalian animal is enzymatically treated, and a gene coding said inhibitory protein.
摘要翻译：从具有图1和2中给出的氨基酸序列的炎症部位纯化的磷脂酶A2的蛋白质抑制剂。 3-1至3-3或与其生理等同的氨基酸序列，其中哺乳动物血清被酶处理的所述抑制性蛋白质的制备方法和编码所述抑制性蛋白质的基因。

19. 发明授权

US07282095B2 Silicon single crystal pulling method 有权
标题翻译：硅单晶拉拔法
公开(公告)号：US07282095B2
公开(公告)日：2007-10-16
申请号：US10561820
申请日：2005-01-25
申请人： Kazuhiro Harada , Norihito Fukatsu , Senlin Fu , Yoji Suzuki
发明人： Kazuhiro Harada , Norihito Fukatsu , Senlin Fu , Yoji Suzuki
IPC分类号： C30B15/20
CPC分类号： C30B15/14 , C30B15/305 , C30B29/06 , C30B35/00 , Y10S117/917 , Y10T117/1068 , Y10T117/1072
摘要： [Problem] A silicon single crystal ingot in which point defect agglomerates do not exist over a substantially entire length thereof is manufactured without reducing a pure margin.[Solving Means] A heat shielding member 36 comprises a bulge portion 41 which is provided to bulge in an in-cylinder direction at a lower portion of a cylindrical portion 37 and has a heat storage member 47 provided therein. A flow quantity of an inert gas flowing down between the bulge portion 41 in the heat shielding member 36 and an ingot 25 when pulling up a top-side ingot 25a of the silicon single crystal ingot 25 is set larger than a flow quantity of the inert gas flowing down between the bulge portion 41 and the ingot 25 when pulling up a bottom-side ingot 25b of the silicon single crystal ingot 25, thereby pulling up the ingot 25. Alternatively, an intensity of a cusp magnetic field 53 when pulling up the top-side ingot 25a is set higher than an intensity of the cusp magnetic field 53 when pulling up the bottom-side ingot 25b.
摘要翻译： [问题]制造在其基本上整个长度上不存在点缺陷聚集体的硅单晶锭，而不会减少纯净余量。遮蔽构件36包括凸出部分41，该凸起部分41设置成在圆柱形部分37的下部处沿缸内方向凸起并且具有设置在其中的储热构件47。在将硅单晶锭25的顶侧铸锭25a拉起时，在隔热部件36的隆起部41与锭体25之间向下流动的惰性气体的流量被设定为大于当拉起硅单晶锭25的底侧晶锭25b时，惰性气体在凸起部41和锭25之间向下流动，从而拉出铸块25。或者，当拉起顶侧晶锭25a时，尖端磁场53的强度被设定为高于尖端磁场53的强度时，拉动底侧晶锭25b。

20. 发明授权

US06682597B2 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer 有权
标题翻译：硅晶片及其热处理方法和热处理硅晶片
公开(公告)号：US06682597B2
公开(公告)日：2004-01-27
申请号：US10162012
申请日：2002-06-03
申请人： Hiroshi Koya , Hisashi Furuya , Yoji Suzuki , Yukio Muroi , Takaaki Shiota
发明人： Hiroshi Koya , Hisashi Furuya , Yoji Suzuki , Yukio Muroi , Takaaki Shiota
IPC分类号： C30B2814
CPC分类号： C30B15/203 , C30B29/06
摘要： A method of heat-treating a silicon wafer has the steps of: preparing a silicon wafer having an oxygen concentration of 1.2×1018 atoms/cm3 or less (old ASTM) without generating crystal originated particles(COP'S) and interstitial-type large dislocation(L/D); forming a polysilicon layer of 0.1 &mgr;m to 1.6 &mgr;m in thickness on a back of the silicon wafer by a chemical-vapor deposition at a temperature of 670° C.±30° C.; and heat-treating the silicon wafer having the polysilicon layer in an oxygen atmosphere at 1000° C.±30° C. for 2 to 5 hours and subsequently at 1130° C.±30° C. for 1 to 16 hours. In this method, the silicon wafer before the formation of the polysilicon layer thereon is the type of a wafer in which oxidation induced stacking faults(OSF's) manifest itself at a center of the wafer when the wafer is subjected to the heat-treatment. Accordingly, the resulting silicon wafer with a polysilicon layer is of OSF fee and COP free, even when the wafer is subjected to the conventional OSF-manifesting heat treatment. The wafer with the polysilicon layer exerts a uniform gettering effect between the peripheral edge and center of the silicon wafer as a result of a uniform oxygen precipitation occurred at the entire surface of the silicon wafer.
摘要翻译：硅晶片的热处理方法具有以下步骤：制备氧浓度为1.2×10 18原子/ cm 3或更低（旧ASTM）的硅晶片，而不产生晶体起始颗粒（COP'S）和间隙型大位错（L / D）; 通过在670℃±30℃的温度下的化学气相沉积在硅晶片的背面上形成厚度为0.1μm至1.6μm的多晶硅层。在氧气氛下，在1000℃±30℃下，将具有多晶硅层的硅晶片热处理2〜5小时，然后在1130℃±30℃下热处理1〜16小时。在该方法中，在其上形成多晶硅层之前的硅晶片是当晶片进行热处理时，氧化诱导堆垛层错（OSF）在晶片的中心处显现的晶片的类型。因此，即使当经过常规的OSF显示热处理时，所得到的具有多晶硅层的硅晶片也具有OSF费用和COP。具有多晶硅层的晶片在硅晶片的整个表面上发生均匀的氧沉淀的结果，在硅晶片的外围边缘和中心之间施加均匀的吸气效应。

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