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11. 发明授权

US06894491B2 Method and apparatus for metrological process control implementing complementary sensors 失效
标题翻译：用于计量过程控制的实现互补传感器的方法和装置
公开(公告)号：US06894491B2
公开(公告)日：2005-05-17
申请号：US10328884
申请日：2002-12-23
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： H01L21/66 , G01B7/06 , G01R33/12
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要翻译：提供了一种用于检测晶片层的厚度的方法。该方法包括限定配置成接合要处理的晶片的晶片载体的特定半径。该方法还包括提供配置成创建一组互补传感器的多个传感器。该方法还包括沿着晶片载体内的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相位相同角度。该方法还包括测量由多个传感器产生的信号。还包括对由多个传感器产生的信号进行平均以产生组合信号。平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。

12. 发明授权

US06808590B1 Method and apparatus of arrayed sensors for metrological control 失效
标题翻译：用于计量控制的阵列传感器的方法和装置
公开(公告)号：US06808590B1
公开(公告)日：2004-10-26
申请号：US10186932
申请日：2002-06-28
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： H01L21302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要翻译：提供了一种用于处理晶片的系统。该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。载体膜固定到底表面并支撑晶片。嵌入晶片载体的传感器。传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。包括CMP工具外部的传感器阵列。传感器阵列与嵌入在晶片载体中的传感器连通，并且基本上消除了距离灵敏度。传感器阵列提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器进行校准。校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。还提供了一种方法和装置。

13. 发明申请

US20050125202A1 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection 有权
标题翻译：用于过程状态监测和端点检测的斜率到阈值转换的方法和装置
公开(公告)号：US20050125202A1
公开(公告)日：2005-06-09
申请号：US11030374
申请日：2005-01-05
申请人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas Bright
发明人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas Bright
IPC分类号： G05B23/02 , H01L21/66 , H03F1/26 , G06F15/00 , H04B15/00
CPC分类号： G05B23/0254 , H01L22/26
摘要： A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.
摘要翻译：提供了一种将基于斜率的检测任务转换为基于阈值的检测任务的方法。该方法通过为对应于被监视的进程的值的一组点定义近似方程来启动。然后，预测在被监视的处理的当前点的期望值。接下来，计算被监视处理当前点的测量值与对应的期望值之间的差值。然后，对连续点监测差异，以检测测量值和预期值之间的偏差值。接下来，基于偏差值的检测来识别被监视处理的转变点。还提供了一种处理系统，其被配置为提供用于基于斜率的转换的实时数据和计算机可读介质。

14. 发明授权

US06937915B1 Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control 失效
标题翻译：用于检测化学机械抛光中晶片表面特性的过渡状态和控制的装置和方法
公开(公告)号：US06937915B1
公开(公告)日：2005-08-30
申请号：US10113151
申请日：2002-03-28
申请人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
发明人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
IPC分类号： B24B37/005 , B24B49/02 , B24B49/10 , B24B49/14 , H01L21/304 , H01L21/66 , G06F19/00
CPC分类号： B24B37/005 , B24B49/10 , B24B49/14
摘要： In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.
摘要翻译：在化学机械抛光装置中，晶片承载板设置有用于接收位于非常接近待抛光晶片的传感器的空腔。由抛光垫与晶片的暴露表面之间的接触所产生的能量仅传播到传感器非常短的距离，并由传感器感测，提供关于晶片的暴露表面的性质的数据以及这些属性的转换。相关方法提供了将感测能量与表面性质和转变相关联的图。相关图提供过程控制的过程状态数据。

15. 发明授权

US07205166B2 Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties 失效
标题翻译：用于测量导电膜性质的阵列，聚集或耦合涡流传感器配置的方法和装置
公开(公告)号：US07205166B2
公开(公告)日：2007-04-17
申请号：US10749531
申请日：2003-12-30
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , Charles Freund
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , Charles Freund
IPC分类号： H01L21/66
CPC分类号： G01B7/107 , G01B7/105 , G01B2210/44
摘要： A method for minimizing measuring spot size and noise during film thickness measurement is provided. The method initiates with locating a first eddy current sensor directed toward a first surface associated with a conductive film. The method includes locating a second eddy current sensor directed toward a second surface associated with the conductive film. The first and second eddy current sensors may share a common axis or be offset from each other. The method further includes alternating power supplied to the first eddy current sensor and the second eddy current sensor, such that the first eddy current sensor and the second eddy current sensor are powered one at a time. In one aspect of the invention, a delay time is incorporated between switching power between the first eddy current sensor and the second eddy current sensor. The method also includes calculating the film thickness measurement based on a combination of signals from the first eddy current sensor and the second eddy current sensor. An apparatus and a system are also provided.
摘要翻译：提供了一种在膜厚测量期间最小化测量点尺寸和噪声的方法。该方法通过定位朝向与导电膜相关联的第一表面的第一涡流传感器来启动。该方法包括定位朝向与导电膜相关联的第二表面的第二涡流传感器。第一和第二涡流传感器可以共享公共轴线或彼此偏移。该方法还包括供应给第一涡流传感器和第二涡流传感器的交流电力，使得第一涡流传感器和第二涡流传感器一次一个地供电。在本发明的一个方面，在第一涡流传感器和第二涡流传感器之间的开关功率之间并入延迟时间。该方法还包括基于来自第一涡流传感器和第二涡流传感器的信号的组合来计算膜厚度测量。还提供了一种装置和系统。

16. 发明授权

US07128803B2 Integration of sensor based metrology into semiconductor processing tools 失效
标题翻译：将基于传感器的计量学整合到半导体处理工具中
公开(公告)号：US07128803B2
公开(公告)日：2006-10-31
申请号：US10186472
申请日：2002-06-28
申请人： Aleksander Owczarz , Yehiel Gotkis , Dave Hemker , Rodney Kistler
发明人： Aleksander Owczarz , Yehiel Gotkis , Dave Hemker , Rodney Kistler
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： B24B1/005 , B24B37/013 , B24B49/105 , B24B57/02 , H01L21/67253
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要翻译：提供了一种用于处理晶片的系统。该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。载体膜固定到底表面并支撑晶片。嵌入晶片载体的传感器。传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。包括CMP工具外部的一组传感器。传感器组与嵌入晶片载体中的传感器进行通信，并且基本上消除了距离灵敏度。传感器簇提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器执行校准。校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。还提供了一种方法和装置。

17. 发明授权

US06925348B2 Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control 失效
标题翻译：用于检测化学机械抛光中晶片表面特性的过程状态和控制的方法
公开(公告)号：US06925348B2
公开(公告)日：2005-08-02
申请号：US10966744
申请日：2004-10-14
申请人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
发明人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
IPC分类号： B24B37/005 , B24B49/02 , B24B49/10 , B24B49/14 , H01L21/304 , H01L21/66 , G06F19/00
CPC分类号： B24B37/005 , B24B49/10 , B24B49/14
摘要： In chemical mechanical polishing, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.
摘要翻译：在化学机械抛光中，晶片承载板设置有用于接收位于非常接近待抛光晶片的传感器的空腔。由抛光垫与晶片的暴露表面之间的接触所产生的能量仅传播到传感器非常短的距离，并由传感器感测，提供关于晶片的暴露表面的性质的数据以及这些属性的转换。相关方法提供了将感测能量与表面性质和转变相关联的图。相关图提供过程控制的过程状态数据。

18. 发明授权

US07010468B2 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection 有权
标题翻译：用于过程状态监测和端点检测的斜率到阈值转换的方法和装置
公开(公告)号：US07010468B2
公开(公告)日：2006-03-07
申请号：US11030374
申请日：2005-01-05
申请人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas J. Bright
发明人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas J. Bright
IPC分类号： H04B15/00
CPC分类号： G05B23/0254 , H01L22/26
摘要： A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.
摘要翻译：提供了一种将基于斜率的检测任务转换为基于阈值的检测任务的方法。该方法通过为对应于被监视的进程的值的一组点定义近似方程来启动。然后，预测在被监视的处理的当前点的期望值。接下来，计算被监视处理的当前点的测量值与对应的期望值之间的差。然后，对连续点监测差异，以检测测量值和预期值之间的偏差值。接下来，基于偏差值的检测来识别被监视处理的转变点。还提供了一种处理系统，其被配置为提供用于基于斜率的转换的实时数据和计算机可读介质。

19. 发明授权

US06859765B2 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection 失效
公开(公告)号：US06859765B2
公开(公告)日：2005-02-22
申请号：US10318967
申请日：2002-12-13
申请人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas J. Bright
发明人： Yehiel Gotkis , Vladimir Katz , David Hemker , Rodney Kistler , Nicolas J. Bright
IPC分类号： G05B23/02 , H01L21/66 , H04B15/00
CPC分类号： G05B23/0254 , H01L22/26
摘要： A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

20. 发明授权

US06716299B1 Profiled retaining ring for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的异型保持环
公开(公告)号：US06716299B1
公开(公告)日：2004-04-06
申请号：US10186944
申请日：2002-06-28
申请人： Yehiel Gotkis , Aleksander Owczarz , Jeffrey Yung
发明人： Yehiel Gotkis , Aleksander Owczarz , Jeffrey Yung
IPC分类号： B24B500
CPC分类号： B24B37/32 , B24B21/04
摘要： An invention is provided for a retaining ring for use in a chemical mechanical planarization system. The retaining ring includes an annular retaining ring capable of holding a flatted wafer in position during a CMP operation. The flatted wafer has a first corner and a second corner disposed on a flatted edge of the wafer. Also included is a plurality of profiled teeth disposed along an interior surface of the annular retaining ring. The profiled teeth are separated from each other such that the first comer and the second corner of the wafer do not contact profiled teeth simultaneously at all orientations of the wafer in the retaining ring. In addition, a surface of each tooth that contacts the wafer is inclined so as to form an angle greater than 90° relative to a polishing surface and away from the center of the wafer.
摘要翻译：本发明提供一种用于化学机械平面化系统的保持环。保持环包括能够在CMP操作期间将平坦的晶片保持在适当位置的环形保持环。平坦晶片具有设置在晶片的平坦边缘上的第一角和第二角。还包括沿着环形保持环的内表面设置的多个成型齿。成型齿彼此分离，使得晶片的第一角和第二角不会在保持环中的晶片的所有取向同时接触成型齿。此外，接触晶片的每个齿的表面倾斜，以便相对于抛光表面形成大于90°的角度并远离晶片的中心。

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