专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08629067B2 Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio 有权
标题翻译：使用柔性氮/氢比产生的自由基的介电膜生长
公开(公告)号：US08629067B2
公开(公告)日：2014-01-14
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

12. 发明授权

US09404178B2 Surface treatment and deposition for reduced outgassing 有权
标题翻译：表面处理和沉积减少排气
公开(公告)号：US09404178B2
公开(公告)日：2016-08-02
申请号：US13494341
申请日：2012-06-12
申请人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： B05D3/04 , H05H1/24 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/34 , C23C16/452 , C23C16/505 , C23C16/56
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

13. 发明申请

US20110159703A1 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 有权
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：US20110159703A1
公开(公告)日：2011-06-30
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

14. 发明授权

US08775744B2 Simultaneous switching of multiple time slots in an optical network node 有权
标题翻译：在光网络节点中同时切换多个时隙
公开(公告)号：US08775744B2
公开(公告)日：2014-07-08
申请号：US12550497
申请日：2009-08-31
申请人： Chung Kuang Chin , Shankar Venkataraman , Swaroop Raghunatha
发明人： Chung Kuang Chin , Shankar Venkataraman , Swaroop Raghunatha
IPC分类号： G06F12/00 , G06F3/00
CPC分类号： H04L49/9036
摘要： A switching frame buffer is described in which data units within a sequence of time slots, of a frame, may be simultaneously input and output at ports of the switching frame buffer. In one implementation, a write port may receive data units within a single cycle of the switch. A number of memories may be provided, where first selected ones of the memories constitute memory groups and second selected ones of the memories constitute a memory subsets, each of the memory groups including a corresponding one of the memory subsets. The write port may supply each of a number of copies of the data units to a corresponding one of the memory subsets. Multiplexers may be associated with the groups of the memories and a read port may receive one of the copies of a number of the data units from different ones of the multiplexers.
摘要翻译：描述了一种切换帧缓冲器，其中帧的时隙序列内的数据单元可以同时在切换帧缓冲器的端口输入和输出。在一个实现中，写入端口可以在交换机的单个周期内接收数据单元。可以提供多个存储器，其中存储器中的第一选定存储器构成存储器组，并且存储器中的第二选定存储器构成存储器子集，每个存储器组包括对应的一个存储器子集。写入端口可以将数据单元的多个副本中的每一个提供给相应的一个存储器子集。多路复用器可以与存储器组相关联，并且读取端口可以从不同的多路复用器接收多个数据单元的一个副本。

15. 发明授权

US08524004B2 Loadlock batch ozone cure 有权
标题翻译：负压批次臭氧固化
公开(公告)号：US08524004B2
公开(公告)日：2013-09-03
申请号：US13161371
申请日：2011-06-15
申请人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
发明人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
IPC分类号： C23C16/455
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

16. 发明授权

US08476142B2 Preferential dielectric gapfill 有权
标题翻译：优选电介质填隙
公开(公告)号：US08476142B2
公开(公告)日：2013-07-02
申请号：US13052238
申请日：2011-03-21
申请人： Sasha Kweskin , Hiroshi Hamana , Paul Edward Gee , Shankar Venkataraman , Kadar Sapre
发明人： Sasha Kweskin , Hiroshi Hamana , Paul Edward Gee , Shankar Venkataraman , Kadar Sapre
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L21/67017
摘要： Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.
摘要翻译：本公开的方面涉及优先用氧化硅填充窄沟槽而不完全填充较宽的沟槽和/或开放区域的方法。在实施例中，通过使含硅前体和臭氧流入处理室来沉积电介质层，使得氧化硅层的相对致密的第一部分，随后是氧化硅层的更多孔（并且更快蚀刻）的第二部分。狭窄的沟槽填充有致密的材料，而开放区域被一层致密材料和更多孔的材料覆盖。在较宽的沟槽中的电介质材料可以在这一点用湿法蚀刻去除，而狭窄沟槽中的致密材料被保留。

17. 发明授权

US08304351B2 In-situ ozone cure for radical-component CVD 有权
标题翻译：用于自由基组分CVD的原位臭氧固化
公开(公告)号：US08304351B2
公开(公告)日：2012-11-06
申请号：US12972711
申请日：2010-12-20
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

18. 发明申请

US20110237085A1 METHODS OF MODIFYING INTERLAYER ADHESION 有权
标题翻译：修改层间粘合的方法
公开(公告)号：US20110237085A1
公开(公告)日：2011-09-29
申请号：US13152865
申请日：2011-06-03
申请人： FRANCIMAR CAMPANA SCHMITT , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
发明人： FRANCIMAR CAMPANA SCHMITT , Li-Qun Xia , Son Van Nguyen , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
摘要翻译：提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

19. 发明授权

US08012887B2 Precursor addition to silicon oxide CVD for improved low temperature gapfill 失效
标题翻译：添加氧化硅CVD用于改善低温缝隙填料的前体
公开(公告)号：US08012887B2
公开(公告)日：2011-09-06
申请号：US12489234
申请日：2009-06-22
申请人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
发明人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/31612 , C23C16/401 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02271 , H01L21/76224
摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.
摘要翻译：在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有氧化硅填充材料内的空隙的数量和/或尺寸减小。

20. 发明申请

US20110055491A1 SIMULTANEOUS SWITCHING OF MULTIPLE TIME SLOTS IN AN OPTICAL NETWORK NODE 有权
标题翻译：光网络节点中多个时隙的同时切换
公开(公告)号：US20110055491A1
公开(公告)日：2011-03-03
申请号：US12550497
申请日：2009-08-31
申请人： Chung Kuang Chin , Shankar Venkataraman , Swaroop Raghunatha
发明人： Chung Kuang Chin , Shankar Venkataraman , Swaroop Raghunatha
IPC分类号： G06F12/00
CPC分类号： H04L49/9036
摘要： A switching frame buffer is described in which data units within a sequence of time slots, of a frame, may be simultaneously input and output at ports of the switching frame buffer. In one implementation, a write port may receive data units within a single cycle of the switch. A number of memories may be provided, where first selected ones of the memories constitute memory groups and second selected ones of the memories constitute a memory subsets, each of the memory groups including a corresponding one of the memory subsets. The write port may supply each of a number of copies of the data units to a corresponding one of the memory subsets. Multiplexers may be associated with the groups of the memories and a read port may receive one of the copies of a number of the data units from different ones of the multiplexers.
摘要翻译：描述了一种切换帧缓冲器，其中帧的时隙序列内的数据单元可以同时在切换帧缓冲器的端口输入和输出。在一个实现中，写入端口可以在交换机的单个周期内接收数据单元。可以提供多个存储器，其中存储器中的第一选定存储器构成存储器组，并且存储器中的第二选定存储器构成存储器子集，每个存储器组包括对应的一个存储器子集。写入端口可以将数据单元的多个副本中的每一个提供给相应的一个存储器子集。多路复用器可以与存储器组相关联，并且读取端口可以从不同的多路复用器接收多个数据单元的一个副本。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式