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11. 发明授权

US06850322B2 Method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace 失效
标题翻译：用于控制多区立式炉中晶片厚度均匀性的方法和装置
公开(公告)号：US06850322B2
公开(公告)日：2005-02-01
申请号：US09751083
申请日：2000-12-29
申请人： William Jarrett Campbell , Scott Bushman , Thomas Sonderman , Elfido Coss, Jr.
发明人： William Jarrett Campbell , Scott Bushman , Thomas Sonderman , Elfido Coss, Jr.
IPC分类号： H01L21/00 , G01N21/00 , G01B11/28
CPC分类号： H01L21/67253
摘要： A method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace is provided. The multi-zone furnace bakes a plurality of wafers within each zone for a first bake time. A film thickness of at least one wafer baked in each zone of the furnace is measured using a metrology tool. A film thickness optimization unit determines a deposition rate for the at least one wafer within each zone, with the deposition rate being determined as a function of the film thickness of the wafer and the first bake time. The film thickness optimization unit then determines a second bake time to bake a subsequent set of wafers, and the subsequent set of wafers is baked in the furnace for the second bake time.
摘要翻译：提供了一种用于控制多区立式炉中的晶片厚度均匀性的方法和装置。多区域炉在每个区域内烘烤多个晶片以进行第一烘烤时间。使用测量工具测量在炉的每个区域中烘烤的至少一个晶片的膜厚度。膜厚度优化单元确定每个区域内的至少一个晶片的沉积速率，其中沉积速率被确定为晶片的膜厚度和第一烘烤时间的函数。然后，膜厚优化单元确定第二烘烤时间以烘烤随后的一组晶片，并且随后的一组晶片在炉中烘烤以用于第二烘烤时间。

12. 发明授权

US06819963B2 Run-to-run control method for proportional-integral-derivative (PID) controller tuning for rapid thermal processing (RTP) 有权
标题翻译：用于快速热处理（RTP）的比例积分微分（PID）控制器调谐的运行控制方法
公开(公告)号：US06819963B2
公开(公告)日：2004-11-16
申请号：US09732187
申请日：2000-12-06
申请人： Terrence J. Riley , William Jarrett Campbell
发明人： Terrence J. Riley , William Jarrett Campbell
IPC分类号： G06F1900
CPC分类号： G05B13/042 , G05B11/42
摘要： A method is provided, the method comprising measuring at least one parameter characteristic of rapid thermal processing performed on a workpiece in a rapid thermal processing step, and modeling the at least one characteristic parameter measured using a first-principles radiation model. The method also comprises applying the first-principles radiation model to modify the rapid thermal processing performed in the rapid thermal processing step.
摘要翻译：提供了一种方法，该方法包括测量在快速热处理步骤中对工件进行的快速热处理的至少一个参数特征，以及对使用第一原理辐射模型测量的至少一个特征参数进行建模。该方法还包括应用第一原理辐射模型来修改在快速热处理步骤中执行的快速热处理。

13. 发明授权

US06650957B1 Method and apparatus for run-to-run control of deposition process 有权
标题翻译：沉淀过程运行控制的方法和装置
公开(公告)号：US06650957B1
公开(公告)日：2003-11-18
申请号：US09476696
申请日：2000-01-03
申请人： William Jarrett Campbell , Thomas Sonderman , Craig W. Christian
发明人： William Jarrett Campbell , Thomas Sonderman , Craig W. Christian
IPC分类号： G06F1900
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/45031 , Y02P90/20 , Y02P90/22
摘要： A method and an apparatus for controlling a deposition process in a manufacturing process. A process recipe setting step is performed. A process run of semiconductor devices is performed based upon the process recipe. Metrology data relating to the process run of semiconductor dev determination is made whether production results are within a predetermined tolerance level, based upon the metrology data. Process recipe settings are modified in response to a determination that the production results are within a predetermined tolerance level, based upon the metrology data. A processing tool is capable of receiving at least one control input parameter and a metrology data acquisition unit is interfaced with the processing tool and is capable of acquiring metrology data from the processing tool. A production data analysis unit is interfaced with the metrology data acquisition unit and is capable of analyzing the metrology data from the metrology data acquisition unit and a control input parameter adjustment unit is interfaced with the production data analysis unit and the processing tool and is capable of performing adjustments upon the control input parameter.
摘要翻译：一种用于在制造过程中控制沉积工艺的方法和装置。进行处理配方设定步骤。基于工艺配方执行半导体器件的工艺流程。基于测量数据，确定生产结果是否处于预定的容差水平内的与半导体开发测定的过程运行有关的计量数据。响应于基于测量数据确定生产结果在预定容差水平内的过程配方设置被修改。处理工具能够接收至少一个控制输入参数，并且测量数据获取单元与处理工具接口并且能够从处理工具获取测量数据。生产数据分析单元与测量数据获取单元接口，并且能够分析来自计量数据获取单元的计量数据，并且控制输入参数调整单元与生产数据分析单元和处理工具接口，并且能够对控制输入参数进行调整。

14. 发明授权

US06546306B1 Method for adjusting incoming film thickness uniformity such that variations across the film after polishing minimized 失效
标题翻译：用于调节进入膜厚度均匀性的方法，使得抛光后的膜的变化最小化
公开(公告)号：US06546306B1
公开(公告)日：2003-04-08
申请号：US09371635
申请日：1999-08-11
申请人： Scott Bushman , William Jarrett Campbell
发明人： Scott Bushman , William Jarrett Campbell
IPC分类号： G06F1900
CPC分类号： B24B37/042 , B24B49/00
摘要： A method comprising determining a polishing profile produced by a polishing tool and manufacturing a process layer with a surface profile prior to polishing operations based upon the determined polishing profile of the polishing tool.
摘要翻译：一种方法，包括根据所确定的抛光工具的抛光轮廓，确定抛光工具产生的抛光轮廓并在抛光操作之前制造具有表面轮廓的处理层。

15. 发明授权

US06529789B1 Method and apparatus for automatic routing for reentrant processes 有权
标题翻译：用于可重入流程的自动路由的方法和装置
公开(公告)号：US06529789B1
公开(公告)日：2003-03-04
申请号：US10097467
申请日：2002-03-14
申请人： William Jarrett Campbell , Anthony J. Toprac , Christopher A. Bone
发明人： William Jarrett Campbell , Anthony J. Toprac , Christopher A. Bone
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32265 , G05B2219/32324 , G05B2219/45031 , H01L21/67276 , Y02P90/20
摘要： The present invention provides for a method and an apparatus for automatic routing of semiconductor devices within a manufacturing area. Performance of a plurality of manufacturing tools is tracked while processing semiconductor devices. At least one optimal combination of the manufacturing tools is determined based upon the tracked performance of the manufacturing tools. A queuing system is implemented to attain the optimal combination of the manufacturing tools. A dispatch system is deployed in response to the queuing system for routing the semiconductor devices within the manufacturing area.
摘要翻译：本发明提供一种用于在制造区域内自动路由半导体器件的方法和装置。在处理半导体器件的同时跟踪多个制造工具的性能。基于制造工具的跟踪性能来确定制造工具的至少一个最佳组合。实施排队系统以实现制造工具的最佳组合。响应于用于在制造区域内布线半导体器件的排队系统部署调度系统。

16. 发明授权

US06352867B1 Method of controlling feature dimensions based upon etch chemistry concentrations 有权
标题翻译：基于蚀刻化学浓度控制特征尺寸的方法
公开(公告)号：US06352867B1
公开(公告)日：2002-03-05
申请号：US09478181
申请日：2000-01-05
申请人： Terri A. Couteau , William Jarrett Campbell , Anthony J. Toprac
发明人： Terri A. Couteau , William Jarrett Campbell , Anthony J. Toprac
IPC分类号： H01L2100
CPC分类号： H01L21/32134
摘要： The present invention is directed to a method of controlling the width of a gate electrode based upon the etch rate of a chemical bath. In one illustrative embodiment, the method comprises determining an etching rate for a chemical bath, determining the manufactured width of the gate electrode, and varying the time duration of an etching process performed in the bath depending upon the etch rate of the bath and the width of the gate electrode.
摘要翻译：本发明涉及一种基于化学浴蚀刻速率来控制栅电极的宽度的方法。在一个说明性实施例中，该方法包括确定用于化学浴的蚀刻速率，确定制造的栅电极的宽度，并且根据镀液的蚀刻速率和宽度来改变在镀液中进行的蚀刻工艺的持续时间的栅电极。

17. 发明授权

US06265304B1 Controlling an etching process of multiple layers based upon thickness ratio of the dielectric layers 有权
标题翻译：基于介电层的厚度比控制多层蚀刻工艺
公开(公告)号：US06265304B1
公开(公告)日：2001-07-24
申请号：US09412215
申请日：1999-10-05
申请人： William Jarrett Campbell
发明人： William Jarrett Campbell
IPC分类号： H01L214763
CPC分类号： H01L21/31116 , H01L21/76802 , Y10S438/957
摘要： The present invention is directed to a method of forming conductive interconnections in an integrated circuit device. In one embodiment, the method comprises forming a dielectric stack comprised of multiple layers, and determining a thickness ratio of the layers of the stack. The method further comprises determining an etching process to be performed on the dielectric stack to define an opening for a conductive interconnection based upon the determined thickness ration, and performing the determined etch process on the dielectric stack.
摘要翻译：本发明涉及一种在集成电路器件中形成导电互连的方法。在一个实施例中，该方法包括形成由多层构成的电介质堆叠，以及确定层叠层的厚度比。该方法还包括确定在电介质叠层上执行的蚀刻工艺，以基于所确定的厚度比例来定义用于导电互连的开口，以及在电介质叠层上执行所确定的蚀刻工艺。

18. 发明授权

US06248602B1 Method and apparatus for automated rework within run-to-run control semiconductor manufacturing 有权
标题翻译：运行控制半导体制造中自动返修的方法和装置
公开(公告)号：US06248602B1
公开(公告)日：2001-06-19
申请号：US09430862
申请日：1999-11-01
申请人： Christopher A. Bode , William Jarrett Campbell
发明人： Christopher A. Bode , William Jarrett Campbell
IPC分类号： H01L2166
CPC分类号： H01L22/20
摘要： The present invention provides for a method and an apparatus for performing automated rework in a manufacturing process. A lot of semiconductor devices is processed using a first set of control input parameters. The first set of control input parameters is stored in a memory location. Process data from the processing of the lot of semiconductor devices is acquired. Errors in the process data are analyzed. At least one automated rework procedure is performed on the lot of semiconductor devices in response to the analysis of the process data.
摘要翻译：本发明提供一种用于在制造过程中执行自动返修的方法和装置。使用第一组控制输入参数来处理大量的半导体器件。第一组控制输入参数存储在存储器中。获取来自多个半导体器件的处理的处理数据。分析过程数据中的错误。响应于过程数据的分析，对多个半导体器件执行至少一个自动返工过程。

19. 发明授权

US06230069B1 System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control 失效
标题翻译：使用模型预测控制来控制半导体制造中离散零件制造的系统和方法
公开(公告)号：US06230069B1
公开(公告)日：2001-05-08
申请号：US09105979
申请日：1998-06-26
申请人： William Jarrett Campbell , James Anthony Mullins , Anthony John Toprac
发明人： William Jarrett Campbell , James Anthony Mullins , Anthony John Toprac
IPC分类号： G06F1900
CPC分类号： H01L22/20 , G05B19/41885 , Y02P90/26
摘要： A system and method for controlling the manufacture of semiconductor wafers using model predictive control is provided. In accordance with one embodiment, a tool output of the manufacturing tool is determined based on a first wafer run. Using the tool output, a tool input for a subsequent wafer run is determined by minimizing an optimization equation being dependent upon a model which relates tool output to tool process state and tool process state to tool input and previous tool process state. The tool input is then provided to the manufacturing tool for processing a second wafer run. In this manner, processing by the tool or tool age is taken into account in determining the tool input for a subsequent run. This can reduce variations in tool output from run-to-run and improve the characteristics of the ultimately formed semiconductor devices. The tool may, for example, be a chemical mechanical polishing tool with the tool input being polishing time and the tool output being a post-polish wafer layer thickness associated with CMP tool for a run.
摘要翻译：提供了一种使用模型预测控制来控制半导体晶圆的制造的系统和方法。根据一个实施例，基于第一晶片行程来确定制造工具的工具输出。使用刀具输出，通过最小化优化方程来确定依赖于将刀具输出与刀具加工状态和刀具加工状态相关联到刀具输入和先前刀具加工状态的模型最小化来确定后续刀片输入的刀具输入。然后将刀具输入提供给用于处理第二晶片运行的制造工具。以这种方式，在确定用于后续运行的工具输入时，将考虑通过工具或工具年龄的处理。这可以减少运行中的刀具输出的变化，并改善最终形成的半导体器件的特性。该工具可以例如是化学机械抛光工具，其中刀具输入是抛光时间，并且刀具输出是与用于运行的CMP工具相关联的后抛光晶片层厚度。

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