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11. 发明授权

US09173626B2 Method for performing dynamic registration, overlays, and 3D views with fluoroscopic images 有权
标题翻译：用荧光镜图像执行动态注册，叠加和3D视图的方法
公开(公告)号：US09173626B2
公开(公告)日：2015-11-03
申请号：US13733395
申请日：2013-01-03
申请人： Atilla Peter Kiraly , Wen Wu , Norbert Strobel , Alexander Benjamin Brost , Terrence Chen
发明人： Atilla Peter Kiraly , Wen Wu , Norbert Strobel , Alexander Benjamin Brost , Terrence Chen
IPC分类号： A61B5/05 , A61B6/00 , A61B6/12 , A61M25/00
CPC分类号： A61B6/5241 , A61B6/12 , A61B6/466 , A61B6/469 , A61B6/485 , A61B6/503 , A61B6/504 , A61B6/5235 , A61B6/5264 , A61M25/0068
摘要： A method (200, 300) and system (100) for performing real-time, dynamic overlays on fluoroscopic images to aid in navigation and localization during medical procedures.
摘要翻译：一种方法（200,300）和系统（100），用于在荧光透视图像上执行实时动态叠加以辅助医疗过程中的导航和定位。

12. 发明授权

US08318573B2 Nonvolatile memory elements 有权
标题翻译：非易失性存储元件
公开(公告)号：US08318573B2
公开(公告)日：2012-11-27
申请号：US13337611
申请日：2011-12-27
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

13. 发明申请

US20070269647A1 Polymer Foams With Treated Fillers, Fabrication Method And Products Using Same 有权
标题翻译：具有处理填料的聚合物泡沫，使用相同的制造方法和产品
公开(公告)号：US20070269647A1
公开(公告)日：2007-11-22
申请号：US11687475
申请日：2007-03-16
申请人： Wen Wu , David Dobreski
发明人： Wen Wu , David Dobreski
IPC分类号： B32B5/22 , B29C44/04 , C08J9/00
CPC分类号： C08J9/0066 , Y10T428/249981 , Y10T428/249986 , Y10T428/249988 , Y10T428/249991 , Y10T428/249992 , Y10T428/249993
摘要： The present invention provides for a polymer composite foam with a treated filler and methods for making the same. The polymer composite foam includes a polymer capable of being formed into a polymeric foam and a treated filler, wherein the polymer defines a plurality of cells dispersed therethrough and the treated filler is dispersed throughout the polymer. The filler is treated by techniques which exfoliate, delaminate or intercalate the filler particles into individual micro and/or nano size particulates and platelets. Ideally, the treated filler has a median particle size ranging from about 0.1 nm-10 μm. The treated filler enhances the rigidity, barrier properties, heat deflection temperature, nucleation characteristics, fire retardant characteristics and impact properties of the foam. The products fabricated from the polymer composite foam include containers, cups, sleeves, bags, plates, bowls, protective packaging, boards, sheets, void fillers, storageware, dinnerware and cookware. The present invention also provides for methods of fabricating the polymer composite foam.
摘要翻译：本发明提供一种具有处理填料的聚合物复合泡沫体及其制备方法。聚合物复合泡沫体包括能够形成聚合物泡沫和经处理的填料的聚合物，其中聚合物限定了分散在其中的多个细胞，并且处理的填料分散在整个聚合物中。填料通过将填料颗粒剥离，分层或嵌入到单独的微粒和/或纳米尺寸颗粒和血小板中的技术来处理。理想地，处理过的填料的中值粒度为约0.1nm-10μm。经处理的填料增强了泡沫的刚性，阻隔性能，热变形温度，成核特性，阻燃特性和冲击性能。由聚合物复合泡沫制成的产品包括容器，杯子，袖子，袋子，盘子，碗，保护性包装，板，片，空隙填料，储存器皿，餐具和炊具。本发明还提供了制造聚合物复合泡沫体的方法。

14. 发明申请

US20070201037A1 Lens measuring method and device for determining decenter and tilt of the lens 失效
标题翻译：用于确定透镜的倾斜和倾斜的透镜测量方法和装置
公开(公告)号：US20070201037A1
公开(公告)日：2007-08-30
申请号：US11513601
申请日：2006-08-31
申请人： Wen Wu , Kuo-Cheng Huang , Chien-Shing Lee , Jung-Ru Yu
发明人： Wen Wu , Kuo-Cheng Huang , Chien-Shing Lee , Jung-Ru Yu
IPC分类号： G01B11/02
CPC分类号： G01B11/272
摘要： A device for measuring a lens, comprising a first interferometer having a first optical axis and carried on a first adjustment base, a lens holder for holding the lens having a first surface having a first lens optical axis and a second surface having a second lens optical axis, and a platen having a sliding rail and carrying the first adjustment base and the lens holder thereon, wherein the lens holder is movable on the sliding rail, wherein each of the first adjustment base and the lens holder has a tetra-axis adjustment mechanism through which a relative positional relationship of the first optical axis of the first interferometer and the first lens optical axis of the first surface of the lens is adjustable.
摘要翻译：一种用于测量透镜的装置，包括具有第一光轴并承载在第一调节基座上的第一干涉仪，用于保持具有第一透镜光轴的第一表面的透镜的透镜保持器和具有第二透镜光学的第二表面以及具有滑动导轨并在其上承载第一调节基座和透镜架的压板，其中透镜保持件可在滑轨上移动，其中第一调节基座和透镜保持器中的每一个具有四轴调节机构第一干涉仪的第一光轴与透镜的第一表面的第一透镜光轴之间的相对位置关系可调整。

15. 发明授权

US07255996B2 Compositions, methods and kits for detecting the nucleic acids of HIV-1 and HIV-2 有权
标题翻译：用于检测HIV-1和HIV-2核酸的组合物，方法和试剂盒
公开(公告)号：US07255996B2
公开(公告)日：2007-08-14
申请号：US11015605
申请日：2004-12-16
申请人： Jeffrey M. Linnen , Wen Wu
发明人： Jeffrey M. Linnen , Wen Wu
IPC分类号： C12Q1/68
CPC分类号： C12Q1/703 , C12Q2563/103 , C12Q2531/113 , C12Q2523/101
摘要： Compositions, methods and kits for detecting the nucleic acids of HIV-1, HIV-2, or the combination of HIV-1 and HIV-2. Particularly described are oligonucleotides that are useful as hybridization probes and amplification primers, including cross-reacting hybridization probes and cross-reacting amplification primers, for detecting very low levels of viral nucleic acids.
摘要翻译：用于检测HIV-1，HIV-2或HIV-1和HIV-2的组合的核酸的组合物，方法和试剂盒。特别描述的是可用作杂交探针和扩增引物（包括用于检测非常低水平的病毒核酸的交叉反应杂交探针和交叉反应扩增引物）的寡核苷酸。

16. 发明申请

US20060188912A1 Sample preparation method incorporating an alkaline shock 有权
公开(公告)号：US20060188912A1
公开(公告)日：2006-08-24
申请号：US11356613
申请日：2006-02-17
申请人： Kui Gao , Michael Becker , Wen Wu , Jeffrey Linnen
发明人： Kui Gao , Michael Becker , Wen Wu , Jeffrey Linnen
IPC分类号： C12Q1/68
CPC分类号： C12N15/1006 , C12N15/1013 , C12Q1/6806 , C12Q1/689 , C12Q2527/119
摘要： Method of preparing a biological sample appropriate for use in a subsequent in vitro nucleic acid amplification reaction. The method involves a rapid, transient exposure to alkaline conditions which can be achieved by mixing an alkaline solution with a pH-buffered solution that includes a detergent and the biological sample to be tested for the presence of particular nucleic acid species using in vitro amplification. The invented method advantageously can improve detection of some target nucleic acids without substantially compromising detectability of others. The method is particularly useful for simultaneously preparing RNA and DNA templates that can be used in multiplex amplification reactions.

17. 发明申请

US20120205610A1 RESISTIVE SWITCHING MEMORY ELEMENT INCLUDING DOPED SILICON ELECTRODE 有权
标题翻译：电阻式开关元件包括掺杂的硅电极
公开(公告)号：US20120205610A1
公开(公告)日：2012-08-16
申请号：US13454392
申请日：2012-04-24
申请人： Prashant Phatak , Tony Chiang , Michael Miller , Wen Wu
发明人： Prashant Phatak , Tony Chiang , Michael Miller , Wen Wu
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.
摘要翻译：描述了包括掺杂硅电极的电阻式开关存储元件，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特之间 eV），第一电极和第二电极之间的金属氧化物层，金属氧化物层使用体积介导的开关进行开关，并且具有大于4eV的带隙，并且存储元件从低电阻状态切换到高电阻状态，反之亦然。

18. 发明申请

US20100258781A1 RESISTIVE SWITCHING MEMORY ELEMENT INCLUDING DOPED SILICON ELECTRODE 有权
标题翻译：电阻式开关元件包括掺杂的硅电极
公开(公告)号：US20100258781A1
公开(公告)日：2010-10-14
申请号：US12608934
申请日：2009-10-29
申请人： Prashant Phatak , Tony Chiang , Michael Miller , Wen Wu
发明人： Prashant Phatak , Tony Chiang , Michael Miller , Wen Wu
IPC分类号： H01L47/00
CPC分类号： H01L45/1616 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.
摘要翻译：描述了包括掺杂硅电极的电阻式开关存储元件，其包括包括具有第一功函数的掺杂硅的第一电极，具有与第一功函数不同的第二功函数的第二电极在0.1和1.0电子伏特之间 eV），第一电极和第二电极之间的金属氧化物层，金属氧化物层使用体积介导的开关进行开关，并且具有大于4eV的带隙，并且存储元件从低电阻状态切换到高电阻状态，反之亦然。

19. 发明授权

US07682966B1 Multistep method of depositing metal seed layers 有权
标题翻译：多步法沉积金属种子层
公开(公告)号：US07682966B1
公开(公告)日：2010-03-23
申请号：US11701984
申请日：2007-02-01
申请人： Robert Rozbicki , Bart van Schravendijk , Tom Mountsier , Wen Wu
发明人： Robert Rozbicki , Bart van Schravendijk , Tom Mountsier , Wen Wu
IPC分类号： H01L23/535
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/5826 , C23C14/584 , H01L21/2855 , H01L21/76862 , H01L21/76865 , H01L21/76873
摘要： Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves at least three operations. In this method, a first layer of metal is deposited onto the substrate to cover at least the bottom portions of the recessed features. The first layer of metal is subsequently redistributed to improve sidewall coverage of the recessed features. Next, a second layer of metal is deposited on at least the field region of the substrate and on the bottom portions of the recessed features. The method can be implemented using a PVD apparatus that allows deposition and resputtering operations. This sequence of operations can afford seed layers with improved step coverage. It also leads to decreased formation of voids in interconnects, and to improved resistance characteristics of formed IC devices.
摘要翻译：通过涉及至少三个操作的方法将金属种子层沉积在具有凹陷特征的半导体衬底上。在该方法中，第一金属层沉积在基底上以至少覆盖凹陷特征的底部。随后重新分布第一金属层以改善凹陷特征的侧壁覆盖。接下来，在衬底的至少场区域和凹陷特征的底部上沉积第二层金属。该方法可以使用允许沉积和重新溅射操作的PVD装置来实现。这种操作顺序可以提供具有改进的台阶覆盖率的种子层。它还导致互连中空隙的形成减少，并改善形成的IC器件的电阻特性。

20. 发明授权

US07666600B2 Cross-reactive primers for amplifying the nucleic acids of HIV-1 and HIV-2 有权
标题翻译：用于扩增HIV-1和HIV-2核酸的交叉反应性引物
公开(公告)号：US07666600B2
公开(公告)日：2010-02-23
申请号：US11837954
申请日：2007-08-13
申请人： Jeffrey M. Linnen , Wen Wu
发明人： Jeffrey M. Linnen , Wen Wu
IPC分类号： C12Q1/68 , C07H21/02 , C07H21/04
CPC分类号： C12Q1/703 , C12Q2563/103 , C12Q2531/113 , C12Q2523/101
摘要： Compositions, methods and kits for detecting the nucleic acids of HIV-1, HIV-2, or the combination of HIV-1 and HIV-2. Particularly described are oligonucleotides that are useful as hybridization probes and amplification primers, including cross-reacting hybridization probes and cross-reacting amplification primers, for detecting very low levels of viral nucleic acids.
摘要翻译：用于检测HIV-1，HIV-2或HIV-1和HIV-2的组合的核酸的组合物，方法和试剂盒。特别描述的是可用作杂交探针和扩增引物（包括用于检测非常低水平的病毒核酸的交叉反应杂交探针和交叉反应扩增引物）的寡核苷酸。

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