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11. 发明申请

US20130313605A1 ELECTRODE CONTACT STRUCTURE OF LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管的电极接触结构
公开(公告)号：US20130313605A1
公开(公告)日：2013-11-28
申请号：US13478318
申请日：2012-05-23
申请人： Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/40 , H01L33/22
CPC分类号： H01L33/22 , H01L33/38 , H01L33/40
摘要： A light-emitting diode (LED) electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. Through flat interfaces provided by the contact platforms, voids are not generated when the N-type electrodes are formed on the contact platforms. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
摘要翻译：提供了一种用于LED的发光二极管（LED）电极接触结构。 LED包括多个N型电极，N型半导体层，发光层，P型半导体层，镜面层，缓冲层，结合层，永久性基板和P- 型电极。 N型半导体层具有不规则表面和多个接触平台。接触平台以图案化布置形成并分布在N型半导体层上，并且不规则表面形成在N型半导体层上的没有接触平台的区域。 N型电极分别形成在接触平台上。通过由接触平台提供的平坦界面，当在接触平台上形成N型电极时，不会产生空隙。因此，确保令人满意的电接触，从而提高发光效率。

12. 发明授权

US08659029B2 Low contact resistance semiconductor structure and method of fabricating the same 有权
标题翻译：低接触电阻半导体结构及其制造方法
公开(公告)号：US08659029B2
公开(公告)日：2014-02-25
申请号：US13301298
申请日：2011-11-21
申请人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
发明人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
摘要翻译：低接触电阻半导体结构包括衬底，半导体堆叠层，低接触电阻层和透明导电层。低接触电阻层形成在半导体层叠层的P型GaN层的一侧。低接触电阻层形成厚度小于100埃，由选自铝，镓，铟及其组合的材料制成。通过低接触电阻层，可以降低P型GaN层和透明导电层之间的电阻，并且在用于LED时可以提高发光效率。本发明的低接触电阻半导体结构的制造方法通过金属有机化学气相沉积（MOCVD）方法形成薄且一致的低接触电阻层，以增强各层之间的匹配度。

13. 发明申请

US20120241752A1 LOW CONTACT RESISTANCE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：低接触电阻半导体结构及其制造方法
公开(公告)号：US20120241752A1
公开(公告)日：2012-09-27
申请号：US13301298
申请日：2011-11-21
申请人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
发明人： Te-Chung Wang , Fu-Bang Chen , Hsiu-Mu Tang
IPC分类号： H01L33/30 , H01L33/42
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
摘要翻译：低接触电阻半导体结构包括衬底，半导体堆叠层，低接触电阻层和透明导电层。低接触电阻层形成在半导体层叠层的P型GaN层的一侧。低接触电阻层形成厚度小于100埃，由选自铝，镓，铟及其组合的材料制成。通过低接触电阻层，可以降低P型GaN层和透明导电层之间的电阻，并且在用于LED时可以提高发光效率。本发明的低接触电阻半导体结构的制造方法通过金属有机化学气相沉积（MOCVD）方法形成薄且一致的低接触电阻层，以增强各层之间的匹配度。

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