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11. 发明授权

US08278672B2 Semiconductor light-emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08278672B2
公开(公告)日：2012-10-02
申请号：US11727378
申请日：2007-03-26
申请人： Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
发明人： Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
IPC分类号： H01L33/22
CPC分类号： H01L33/16 , H01L33/22
摘要： A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括设置在半导体衬底上的多层外延结构。半导体衬底具有与其上表面垂直的预定晶格方向，其中预定晶格方向从[100]或[100]或[011]或[011]到[011]或[011] ]，使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。本发明还公开了一种制造半导体发光器件的方法。

12. 发明申请

US20130029440A1 METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20130029440A1
公开(公告)日：2013-01-31
申请号：US13632856
申请日：2012-10-01
申请人： Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
发明人： Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
IPC分类号： H01L33/22
CPC分类号： H01L33/16 , H01L33/22
摘要： A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括设置在衬底上的多层外延结构。衬底具有垂直于其上表面的预定晶格方向，其中预定的晶格方向从[100]或[100]到[011]或[011]的角度朝向[011]或[01 1] 使得衬底的上表面包括具有不同晶格面方向的至少两个晶格面。多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。本发明还公开了一种制造半导体发光器件的方法。

13. 发明申请

US20070221929A1 Semiconductor light-emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070221929A1
公开(公告)日：2007-09-27
申请号：US11727378
申请日：2007-03-26
申请人： Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Li Chung-Yuan , Min-Hsun Hsieh
发明人： Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Li Chung-Yuan , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/22
摘要： A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0ī1] or [01ī] from [100], or toward [011] or [0 ii] from [ī00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括设置在半导体衬底上的多层外延结构。半导体衬底具有垂直于其上表面的预定晶格方向，其中预定的晶格方向朝向[100]或[011]或[0 ii]，使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。本发明还公开了一种制造半导体发光器件的方法。

14. 发明授权

US08253889B2 Display apparatus having an array-type light-emitting device 有权
标题翻译：具有阵列型发光装置的显示装置
公开(公告)号：US08253889B2
公开(公告)日：2012-08-28
申请号：US12711780
申请日：2010-02-24
申请人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
发明人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
IPC分类号： G02F1/1335
CPC分类号： G02F1/133617 , G02F1/133603 , G02F2001/133624 , H01L27/156
摘要： The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.
摘要翻译：本申请公开了一种阵列型发光装置，其包括基板，形成在基板上的半导体发光阵列，并发射具有第一光谱的第一光，其中半导体发光阵列包括第一发光单元和第二发光单元，形成在第一发光单元上的用于将第一光转换成具有第三光谱的第三光的第一波长转换层，以及连接第一发光单元和第二发光单元的电路层，发光单元，以使得第一发光单元和第二发光单元在通过电源驱动时根据预定时钟交替点亮。

15. 发明申请

US20100109028A1 Vertical ACLED structure 有权
标题翻译：垂直ACLED结构
公开(公告)号：US20100109028A1
公开(公告)日：2010-05-06
申请号：US12588745
申请日：2009-10-27
申请人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
发明人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.
摘要翻译：本申请涉及光电器件，包括具有第一n型半导体层，第一发光层，第一p型半导体层，第一p型电极和第一n型电极的第一ACLED ; 具有第二n型半导体层的第二ACLED，第二发光层，第二p型半导体层，第二p型电极和第二n型电极，其中，第一ACLED和第二ACLED 是垂直堆叠结构，并且以反并联方式连接。

16. 发明授权

US08410495B2 Array-type light-emitting device and apparatus thereof 有权
标题翻译：阵列式发光装置及其装置
公开(公告)号：US08410495B2
公开(公告)日：2013-04-02
申请号：US12711739
申请日：2010-02-24
申请人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
发明人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
IPC分类号： H01L33/50
CPC分类号： H01L27/156 , F21V9/08 , G02F1/133603 , H01L24/24 , H01L33/505 , H01L33/508 , H01L33/62 , H01L2924/12041 , H01L2924/12044 , H01L2924/00
摘要： The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.
摘要翻译：本申请公开了一种阵列型发光装置，其包括基板，形成在基板上的半导体发光阵列，并发射具有第一光谱的第一光，其中半导体发光阵列包括第一发光单元和第二发光单元，形成在第一发光单元上的用于将第一光转换成具有第三光谱的第三光的第一波长转换层，以及连接第一发光单元和第二发光单元的电路层，发光单元，以使得第一发光单元和第二发光单元在通过电源驱动时根据预定时钟交替点亮。

17. 发明授权

US08269233B2 Vertical ACLED structure 有权
标题翻译：垂直ACLED结构
公开(公告)号：US08269233B2
公开(公告)日：2012-09-18
申请号：US12588745
申请日：2009-10-27
申请人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
发明人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
IPC分类号： H01L29/201 , H01L33/00 , H01L29/18 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.
摘要翻译：本申请涉及光电器件，包括具有第一n型半导体层，第一发光层，第一p型半导体层，第一p型电极和第一n型电极的第一ACLED ; 具有第二n型半导体层的第二ACLED，第二发光层，第二p型半导体层，第二p型电极和第二n型电极，其中，第一ACLED和第二ACLED 是垂直堆叠结构，并且以反并联方式连接。

18. 发明申请

US20200165083A1 TRANSPORTING DEVICE, TRANSPORTING SYSTEM, AND SHELF TRANSPORTING METHOD 审中-公开
公开(公告)号：US20200165083A1
公开(公告)日：2020-05-28
申请号：US16686208
申请日：2019-11-18
申请人： Chau-Lin Huang , Yen-Wen Chen , Chun-Ying Yu
发明人： Chau-Lin Huang , Yen-Wen Chen , Chun-Ying Yu
IPC分类号： B65G67/04 , G05D1/02
摘要： The disclosure provides a transporting device, a transporting system, and a shelf transporting method. The method includes: estimating a device pose of the transporting device in a specific field; detecting a shelf pose of a shelf located in the specific field; in response to receiving a transporting request for the shelf, setting an entry point associated with the shelf based on the shelf pose of the shelf, and controlling the transporting device to move to the entry point; in response to determining that the transporting device has arrived at the entry point, rotating to align with the shelf, and entering an accommodating space beneath the shelf via an entrance of the shelf; raising a lift bar to dock with the shelf, and moving to transport the shelf.

19. 发明授权

US08053994B2 Intelligent wall switch 失效
标题翻译：智能墙壁开关
公开(公告)号：US08053994B2
公开(公告)日：2011-11-08
申请号：US12477248
申请日：2009-06-03
申请人： Yuan-Sheng Liu , Yen-Wen Chen
发明人： Yuan-Sheng Liu , Yen-Wen Chen
IPC分类号： H05B37/02
CPC分类号： H05B37/0272 , H05B37/0227 , Y02B20/48 , Y10T307/786 , Y10T307/826 , Y10T307/832 , Y10T307/845 , Y10T307/944
摘要： An intelligent wall switch comprises an extend operation panel including sensor areas with a first conducting film; a glass on the back sides of the sensor areas including second conducting films; a first circuit board including a backlight LED and an infrared emitter and connected to a flexible cable connected to the second conducting film; a frame on a back side of the glass; a controller system including a second circuit board having an AC-DC power module, relays, AC output connectors, an AC input connector all on a back side thereof, and having a flat cable connector, an infrared receiver, and multiple indicating LEDs all on a front side thereof; a connecting piece and a housing being used to receive the AC-DC power module, the connecting piece being disposed on a back side of the frame, the AC-DC power module being connected to the cable by the flat cable connector.
摘要翻译：一种智能墙壁开关包括一个扩展操作面板，包括具有第一导电膜的传感器区域; 在包括第二导电膜的传感器区域的背面上的玻璃; 第一电路板，包括背光LED和红外发射器，并连接到连接到第二导电膜的柔性电缆; 在玻璃背面的框架; 控制器系统，包括具有AC-DC电源模块，继电器，AC输出连接器，其背面上的AC输入连接器的第二电路板，以及具有扁平电缆连接器，红外接收器和多个指示LED的第二电路板其前侧; 用于接收AC-DC电源模块的连接件和壳体，连接件设置在框架的背面，AC-DC电源模块通过扁平电缆连接器连接到电缆。

20. 发明授权

US07793177B2 Chip testing device and system 有权
标题翻译：芯片测试装置和系统
公开(公告)号：US07793177B2
公开(公告)日：2010-09-07
申请号：US11783371
申请日：2007-04-09
申请人： Yen-Wen Chen , Yen-Ynn Chou
发明人： Yen-Wen Chen , Yen-Ynn Chou
IPC分类号： G01R31/28
CPC分类号： G01R31/318555 , G01R31/31716 , G01R31/318572
摘要： A chip testing device having a plurality of testing units is provided. Each testing unit comprises a selector, a flip-flop unit, a first buffer and a second buffer. The selector is controlled by a control signal and has a first input terminal, a feedback input terminal, and a first output terminal. The flip-flop unit has a second input terminal coupled to the first output terminal, a clock signal input terminal for receiving a reference clock signal, and a second output terminal outputting an output data. The first buffer is coupled to the flip-flop unit to convert the output data to a high voltage data, and outputs the high voltage data. The second buffer is coupled to the first buffer to convert high voltage data to low voltage data and transmit the low voltage data to the feedback input terminal.
摘要翻译：提供具有多个测试单元的芯片测试装置。每个测试单元包括选择器，触发器单元，第一缓冲器和第二缓冲器。选择器由控制信号控制，并具有第一输入端，反馈输入端和第一输出端。触发器单元具有耦合到第一输出端子的第二输入端子，用于接收参考时钟信号的时钟信号输入端子和输出输出数据的第二输出端子。第一缓冲器耦合到触发器单元以将输出数据转换为高电压数据，并输出高电压数据。第二缓冲器耦合到第一缓冲器，以将高电压数据转换成低电压数据，并将低电压数据传送到反馈输入端。

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