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11. 发明申请

US20070067609A1 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US20070067609A1
公开(公告)日：2007-03-22
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： G06F15/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

12. 发明申请

US20050189072A1 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US20050189072A1
公开(公告)日：2005-09-01
申请号：US11119681
申请日：2005-05-02
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/31 , C23F1/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of impurities. The precursor is generated in a canister coupled to a heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm杂质的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm杂质的五（二甲基氨基）钽。在与加热元件耦合的罐中产生前体，其配置成减少杂质的形成。

13. 发明申请

US20080038463A1 ATOMIC LAYER DEPOSITION PROCESS 审中-公开
标题翻译：原子层沉积过程
公开(公告)号：US20080038463A1
公开(公告)日：2008-02-14
申请号：US11873885
申请日：2007-10-17
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support within a process chamber, flowing a carrier gas into an expanding channel to form a circular flow of the carrier gas, exposing the substrate to the circular flow, pulsing a first reactant gas into the circular flow, and depositing a material onto the substrate. The method further provides that the process chamber has a chamber lid containing a centrally positioned expanding channel, a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, at least two gas inlets in fluid communication with the expanding channel, and at least two conduits positioned to provide a gas flow having a circular pattern within the expanded channel.
摘要翻译：在一个实施例中，提供了在原子层沉积（ALD）工艺期间在衬底上沉积材料的方法，其包括将衬底定位在处理室内的衬底支撑件上，使载气流入扩展通道以形成圆形载气的流动，将基底暴露于圆形流动，将第一反应气体脉冲成圆形流，以及将材料沉积到基底上。该方法还提供了处理室，其具有容纳中心定位的扩张通道的腔室盖，从膨胀通道延伸到腔室盖的周边部分的锥形底面，与扩张通道流体连通的至少两个气体入口，以及至少两个管道，其定位成在膨胀通道内提供具有圆形图案的气流。

14. 发明申请

US20070099415A1 INTEGRATION PROCESS OF TUNGSTEN ATOMIC LAYER DEPOSITION FOR METALLIZATION APPLICATION 审中-公开
标题翻译：用于金属化应用的金属原子层沉积的集成过程
公开(公告)号：US20070099415A1
公开(公告)日：2007-05-03
申请号：US11549941
申请日：2006-10-16
申请人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Sean Seutter , Michael Yang , Ming Xi , Vincent Ku , Dien-Yeh Wu , Alan Ouye , Norman Nakashima , Barry Chin , Hong Zhang
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成含钨材料的方法，其包括将具有下层钨层的衬底定位在处理室内，并且在循环层沉积期间将下述钨层上沉积含钨阻挡层处理。含钨阻挡层含有难熔金属氮化物材料。该方法进一步提供在气相沉积工艺期间在含钨阻挡层上沉积种子层，并且在化学气相沉积工艺期间在种子层上沉积体钨层。

15. 发明申请

US20070044719A1 PROCESSING CHAMBER CONFIGURED FOR UNIFORM GAS FLOW 失效
标题翻译：加气室配置均匀气体流量
公开(公告)号：US20070044719A1
公开(公告)日：2007-03-01
申请号：US11552727
申请日：2006-10-25
申请人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
发明人： Vincent Ku , Ling Chen , Howard Grunes , Hua Chung
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4409 , C23C16/4412 , C23C16/45521 , C23C16/4585
摘要： An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
摘要翻译：提供了一种在处理室中进行均匀气体流动的装置和方法。在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。盖子设置在室主体上并且与其限定内部容积。衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。流量控制孔布置在基板支撑件和盖子之间。流量控制孔适于控制离开处理区域的气体流。

16. 发明申请

US20060257295A1 APPARATUS AND METHOD FOR GENERATING A CHEMICAL PRECURSOR 有权
标题翻译：用于生成化学前体的装置和方法
公开(公告)号：US20060257295A1
公开(公告)日：2006-11-16
申请号：US11383642
申请日：2006-05-16
申请人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： B01J8/18
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.
摘要翻译：提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。在一个实施例中，挡板包含在位于罐底部的预制插入件上。在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

17. 发明授权

US06916398B2 Gas delivery apparatus and method for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置和方法
公开(公告)号：US06916398B2
公开(公告)日：2005-07-12
申请号：US10032284
申请日：2001-12-21
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：气体输送组件的一个实施例包括覆盖构件，该覆盖构件在覆盖构件的中心部分处具有扩张通道，并且具有从膨胀通道延伸到覆盖构件的周边部分的底面。一个或多个气体导管联接到膨胀通道，在该扩张通道中，一个或多个气体导管与扩张通道的中心成一角度定位。室的一个实施例包括具有基板接收表面的基板支撑件。该腔室还包括腔室盖，该室盖具有在腔室盖的中心部分处的通道和从通道延伸到腔室盖的周边部分的锥形底面。室盖的底表面的形状和尺寸基本上覆盖基板接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。在一个方面，室盖的底表面可以是锥形的。在另一方面，限定在室盖和基板接收表面之间的反应区域可以包括小体积。在另一方面，通道可以包括从腔室盖的中心部分延伸的锥形扩张通道。腔室的另一实施例包括具有基底接收表面的基底支撑件。腔室还包括腔室盖，其具有从腔室盖的中心部分延伸的膨胀通道，并且具有从膨胀通道延伸到腔室盖的周边部分的锥形底面。一个或多个气体管道设置在扩张通道的上部周围，其中一个或多个气体管道以与扩张通道的中心成一定角度设置。扼流圈设置在邻近锥形底面的周边的腔室盖上。

18. 发明授权

US07780785B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07780785B2
公开(公告)日：2010-08-24
申请号：US10281079
申请日：2002-10-25
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.
摘要翻译：提供了一种用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。一方面，该装置包括具有基板接收表面的基板支撑件和包括从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室盖的周边部分的底面，所述底表面的形状和尺寸基本上覆盖所述基板接收表面。该装置还包括联接到逐渐扩大的通道的一个或多个阀以及联接到每个阀的一个或多个气体源。

19. 发明授权

US07867896B2 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 有权
标题翻译：使用含钽前体和含氮前体连续沉积氮化钽
公开(公告)号：US07867896B2
公开(公告)日：2011-01-11
申请号：US12417439
申请日：2009-04-02
申请人： Wei Cao , Hua Chung , Vincent W. Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent W. Ku , Ling Chen
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
摘要翻译：本发明的实施例提供了一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。此后，可以在基板上沉积成核层和体层。在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。氮前体可以包括氮或氨。在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

20. 发明申请

US20060213558A1 Valve design and configuration for fast delivery system 审中-公开
标题翻译：阀门设计和配置快速输送系统
公开(公告)号：US20060213558A1
公开(公告)日：2006-09-28
申请号：US11432101
申请日：2006-05-11
申请人： Vincent Ku , Ling Chen , Dien-Yeh Wu
发明人： Vincent Ku , Ling Chen , Dien-Yeh Wu
IPC分类号： F16K49/00
CPC分类号： F16K7/16 , F16K27/0236 , F16K27/029 , Y10T137/4259 , Y10T137/6606 , Y10T137/86389 , Y10T137/8766 , Y10T137/87684
摘要： Embodiments of the invention relate to an apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. In one embodiment, a valve assembly includes a valve body having at least two ports comprising a purge inlet and an outlet, a valve seat surrounding one of the ports, an annular groove formed around the valve seat coupling the purge inlet and the outlet, and a diaphragm assembly. The diaphragm assembly further includes a diaphragm movable to contact the valve seat, a piston coupled to the diaphragm, and a cylinder to house the piston. In another embodiment, the cylinder forms an actuation chamber having an internal volume of about 3.0 cm3.
摘要翻译：本发明的实施例涉及一种用于将一种或多种反应物的脉冲快速传递到衬底处理室的装置。在一个实施例中，阀组件包括具有至少两个端口的阀体，所述至少两个端口包括净化入口和出口，围绕所述端口中的一个的阀座，围绕联接净化入口和出口的阀座形成的环形槽，以及隔膜组件。隔膜组件还包括可移动以接触阀座的隔膜，联接到隔膜的活塞以及容纳活塞的气缸。在另一个实施例中，气缸形成具有约3.0cm 3内部体积的致动室。

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