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    • 11. 发明申请
    • Flaw Detector and Flaw Detection Method For Silicon Layer of Wafer
    • 瑕疵检测器和硅片硅片​​探伤方法
    • US20090051358A1
    • 2009-02-26
    • US12087993
    • 2006-09-04
    • Tomohisa ShirasakaTetsuo SakakiTsuneo Kobayashi
    • Tomohisa ShirasakaTetsuo SakakiTsuneo Kobayashi
    • G01N27/90
    • G01N27/902G01N27/9026
    • The present invention is achieved for the purpose of easily detecting a crack or flaw existing in the silicon layer of a wafer in a short period of time. The flaw detector thus provided includes a coil sensor placed at a predetermined distance from the surface of the silicon layer; a radiofrequency applier for applying a radiofrequency to the coil sensor; a scanner for relatively moving the silicon layer and the coil sensor with a constant distance between the surface of the silicon layer and the coil sensor; and a crack detector for detecting a crack or flaw existing in the silicon layer by detecting the change of a signal provided from the coil sensor or the change in the radiofrequency applied by the radiofrequency applier. The frequency of the radiofrequency applied by the radiofrequency applier may be set between 5 MHz and 200 MHz. This enables a flaw detection for a silicon layer which has been considered to be impossible. In the case where the silicon to be flaw-detected is low resistivity silicon, the frequency applied may be set between 0.5 MHz and 200 MHz.
    • 本发明是为了容易地在短时间内检测存在于晶片的硅层中的裂纹或缺陷的目的而实现的。 由此提供的缺陷检测器包括:距离硅层表面预定距离放置的线圈传感器; 用于向线圈传感器施加射频的射频施加器; 用于使硅层和线圈传感器在硅层的表面与线圈传感器之间具有恒定距离的相对移动的扫描器; 以及裂纹检测器,用于通过检测从线圈传感器提供的信号的变化或由射频施加器施加的射频的变化来检测存在于硅层中的裂纹或缺陷。 由射频施加器施加的射频的频率可以设置在5MHz和200MHz之间。 这使得已经被认为是不可能的硅层的探伤。 在要被探伤的硅是低电阻率硅的情况下,施加的频率可以设置在0.5MHz和200MHz之间。
    • 16. 发明授权
    • Process for manufacturing semiconductor integrated circuit device
    • 半导体集成电路器件制造工艺
    • US5210041A
    • 1993-05-11
    • US732280
    • 1991-07-18
    • Tsuneo KobayashiKensuke Nakata
    • Tsuneo KobayashiKensuke Nakata
    • H01L21/66
    • H01L22/20H01L2924/014
    • A wafer manufacturing process for a semiconductor integrated circuit device, including testing the semiconductor wafer at a unit of chip each time a predetermined treating step is performed. The test results are feed to a computer control for restricting succeeding treatments or further testing of chip or chips based on the test results and the predetermined number of chips to be produced. Semiconductor wafer(s) is/are loaded for manufacture on the basis of the number of chips to be produced, taking into account of any losses created by defective chips detected during each testing step and any excess created by additional semiconductor wafers loaded in response to shortages created by defects. The excess chips are monitored by the computer control and any succeeding treatments or further testing of the excess chips are halted to save time and manufacturing costs.
    • 一种用于半导体集成电路器件的晶片制造方法,包括每次执行预定的处理步骤时以芯片为单位测试半导体晶片。 测试结果是基于测试结果和要生产的预定数量的芯片馈送到计算机控制器以限制后续处理或芯片或芯片的进一步测试。 考虑到在每个测试步骤期间检测到的缺陷芯片产生的任何损耗以及由响应于其中的附加半导体晶片而产生的任何额外的过剩,基于要生产的芯片的数量来加载半导体晶片以进行制造 缺陷造成的缺陷。 通过计算机控制来监控多余的芯片,并且停止任何后续处理或进一步测试多余的芯片以节省时间和制造成本。