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11. 发明授权

US06914005B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US06914005B2
公开(公告)日：2005-07-05
申请号：US10085002
申请日：2002-03-01
申请人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
发明人： Muneo Furuse , Mitsuru Suehiro , Hiroshi Kanekiyo , Kunihiko Koroyasu , Tomoyuki Tamura
IPC分类号： H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32449 , H01J37/32082
摘要： A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the sample center, and the gas is transformed into a plasma thereby to etch the sample. RF power is applied between a sample stage and the electrode to apply the energy to charged particles in the plasma to thereby etch the sample. In the process, apart from the incidence of the charged particles to the sample, the charged particles enter also the shower plate of the electrode by application of the RF power. The charged particles entering the processing gas supply holes of the shower plate are neutralized to prevent abnormal discharge on the shower plate and consequently suppress the generation of foreign matter.
摘要翻译：一种等离子体蚀刻方法和装置，其中处理气体从布置在与用于产生等离子体或样品的电极相对的电极上的淋浴板供给到样品中心，并且将气体转化为等离子体，从而蚀刻样品。在样品台和电极之间施加RF功率以将能量施加到等离子体中的带电粒子上，从而蚀刻样品。在该过程中，除了带电粒子对样品的入射之外，带电粒子通过施加RF功率也进入电极的喷淋板。进入喷淋板的处理气体供给孔的带电粒子被中和，以防止喷淋板上的异常放电，从而抑制异物的产生。

12. 发明授权

US06677167B2 Wafer processing apparatus and a wafer stage and a wafer processing method 失效
标题翻译：晶片处理装置和晶片台以及晶片处理方法
公开(公告)号：US06677167B2
公开(公告)日：2004-01-13
申请号：US10086722
申请日：2002-03-04
申请人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburou Kanai , Toshio Masuda
发明人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburou Kanai , Toshio Masuda
IPC分类号： H01L2166
CPC分类号： H01L21/67109
摘要： A wafer processing apparatus comprising a wafer stage, wherein a semiconductor wafer is mounted on the wafer stage so as to process the semiconductor wafer, wherein a holding mechanism of the wafer stage is commonly used for a plurality of wafer stages, and accordingly, the wafer stage can be changed into a wafer stage having a different function so as to process the semiconductor wafer.
摘要翻译：一种晶片处理装置，包括晶圆台，其中半导体晶片安装在晶片台上以便处理半导体晶片，其中晶片台的保持机构通常用于多个晶片台，因此，晶片可以将阶段改变为具有不同功能的晶片台，以便处理半导体晶片。

13. 发明授权

US06549393B2 Semiconductor wafer processing apparatus and method 失效
标题翻译：半导体晶片加工装置及方法
公开(公告)号：US06549393B2
公开(公告)日：2003-04-15
申请号：US09946615
申请日：2001-09-06
申请人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburo Kanai , Ken Yoshioka
发明人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburo Kanai , Ken Yoshioka
IPC分类号： H02N1300
CPC分类号： H01L21/67109 , H01J2237/2001
摘要： A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.
摘要翻译：晶片载物台2，用于通过将晶片放置在晶片台上，将半导体晶片保持在等离子体处理装置中，所述晶片台2包括配备有制冷剂流路的基材26，所述制冷剂流路用于使用于温度调节的制冷剂流动; 设置在所述基材26的晶片固定侧并且具有比所述基材更小的热膨胀系数的应力减小构件28; 设置在所述减压构件的晶片固定侧的电介质膜30; 以及设置在所述基材的晶片非凝固侧并且具有比所述基材更小的热膨胀系数的防偏转构件29。当使用晶片台时，可以均匀且非常精确地控制作为被处理基板的晶片的温度。

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