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11. 发明专利

JP2009191341A Austenitic stainless steel member, method for manufacturing austenitic stainless steel member, and nuclear reactor member 审中-公开
标题翻译：奥氏体不锈钢构件，制造奥氏体不锈钢构件的方法和核反应堆构件
公开(公告)号：JP2009191341A
公开(公告)日：2009-08-27
申请号：JP2008035809
申请日：2008-02-18
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWANO SHOHEI , OBATA MINORU , ITO KIICHI , TANAKA SHIGEAKI
IPC分类号： C21D8/00 , C22C38/00
摘要： PROBLEM TO BE SOLVED: To provide an austenitic stainless steel member especially excellent in stress-corrosion cracking resistance in furnace water, and a nuclear reactor member using the same.
SOLUTION: Cold working is applied to the surface of the austenitic stainless steel sheet, and in the thickness direction thereof, the austenitic stainless worked steel sheet having strain distribution such that strain on the surface of this steel sheet is larger than that at the center part thereof, is formed. A heat-treatment is applied to this worked steel sheet at the temperature of 900-950°C to obtain the austenitic stainless steel member.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在炉水中特别优异的耐应力腐蚀开裂性的奥氏体不锈钢构件和使用该奥氏体不锈钢构件的核反应堆构件。解决方案：对奥氏体不锈钢板的表面施加冷加工，在其厚度方向上，具有应变分布的奥氏体不锈钢加工钢板，使得该钢板表面的应变大于其中心部分形成。在900-950℃的温度下对该加工钢板进行热处理，得到奥氏体不锈钢部件。版权所有（C）2009，JPO＆INPIT

12. 发明专利

JP2008137141A Surface modification method and device 审中-公开
标题翻译：表面改性方法和装置
公开(公告)号：JP2008137141A
公开(公告)日：2008-06-19
申请号：JP2006328222
申请日：2006-12-05
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA MINORU , KAWAGISHI AYAKA , KAWANO SHOHEI , OKUDA TAKESHI , KAMEYAMA IKUKO
IPC分类号： B24C1/10 , G21C19/02 , G21C19/307 , G21D1/00
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To restrain work hardening formed on a surface layer section of a working target on a worked member; and to prevent generation of stress corrosion cracks by forming a compressed stress layer at a desired depth.
SOLUTION: In a surface modification method for using shot-peening in which residual stress on the surface layer section of the work target is modified so that shots accelerated at high speed are collided on the surface of the work target at the worked member, a diameter of the shot is 1.5 mm or more, and speed of the shot is 25 m/sec or less when the shot collides with the surface of the work target.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：抑制在加工构件上的加工对象的表层部形成的加工硬化; 并且通过在期望的深度处形成压缩应力层来防止产生应力腐蚀裂纹。解决方案：在使用喷丸硬化的表面改性方法中，其中工件的表面层部分上的残余应力被改变，使得在高速下加速的冲击在加工构件的工作目标的表面上相撞射击的直径为1.5mm以上，射击时的冲击速度为25m /秒以下。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2006287253A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006287253A
公开(公告)日：2006-10-19
申请号：JP2006158877
申请日：2006-06-07
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： H01L21/285 , H01L21/28 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To prevent leakage current of a semiconductor device by using a film which consists of a refractory metal, an alloy consisting of a refractory metal, silicide of a refractory metal, and a nitride of a Ti, Ta, W, and Ti-W alloy in a contact barrier layer, a gate electrode, or the like, for obtaining the semiconductor device with high reliability.
SOLUTION: In a method for manufacturing the contact barrier of the semiconductor device in which a junction depth of a source-drain region is 0.1 to 0.3 μm, or the semiconductor device which has a conductor in which a gate electrode layer consists of Co silicide, a high purity conductive film for the semiconductor device is formed by sputtering method, wherein Al content of this conductor is, by atomic number, 2×10
16 mole/cm
3 or less, content of heavy metal element except Co is 2×10
17 mole/cm
3 or less, and content of alkali metal is 1×10
16 mole/cm
3 or less.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了通过使用由难熔金属构成的膜，由难熔金属，难熔金属的硅化物和Ti，Ta的氮化物组成的合金来防止半导体器件的漏电流， W和Ti-W合金，用于获得具有高可靠性的半导体器件的接触阻挡层，栅电极等。解决方案：在用于制造源极 - 漏极区域的结深度为0.1至0.3μm的半导体器件的接触势垒的制造方法中，或者具有导体的半导体器件，其中栅极电极层由通过溅射法形成用于半导体器件的高纯度导电膜的Co硅化物，其中该导体的Al含量为原子序数2×10 -6 SP /摩尔/ cm 3， SP>以下，除Co以外的重金属元素的含量为2×10 17 摩尔/ cm 3 / SP> 3以下，碱金属的含量为1×10 16 /摩尔/厘米3 / SP以下。版权所有（C）2007，JPO＆INPIT

14. 发明专利

JP2005265449A Preventive maintenance method of structure 审中-公开
标题翻译：预防性维护方法
公开(公告)号：JP2005265449A
公开(公告)日：2005-09-29
申请号：JP2004074551
申请日：2004-03-16
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO YOSHIHISA , KANO FUMIHISA , ABE YUMIKO , OBATA MINORU , OKAWA MASAHIRO
IPC分类号： G21C5/00 , C21D1/09 , C21D7/04 , C21D8/00 , C22F1/00 , C22F1/10 , G21C19/02 , G21D1/00
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To prevent a stress corrosion crack of a reactor structure by finely granulating uniformly only the surface of the structure.
SOLUTION: Processing treatment is applied to a surface layer of the structure 8, and then heating treatment is applied to the surface layer, to thereby form a uniform fine grain structure on the surface layer of the structure 8.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过仅将结构的表面均匀地精细制粒来防止反应器结构的应力腐蚀裂纹。解决方案：对结构8的表面层进行加工处理，然后对表面层进行加热处理，从而在结构8的表面层上形成均匀的细晶粒结构。（C）2005，JPO＆NCIPI

15. 发明专利

JP2005227171A Method and device for modifying surface of structure 审中-公开
标题翻译：用于修改结构表面的方法和装置
公开(公告)号：JP2005227171A
公开(公告)日：2005-08-25
申请号：JP2004037114
申请日：2004-02-13
申请人： Toshiba Corp , 株式会社東芝
发明人： OBATA MINORU , KAWANO SHOHEI , SAITO YOSHIHISA , YAMAMOTO TETSUO
IPC分类号： G21C5/00 , G21C19/02 , G21D1/00
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable surface modifying technique for a structure capable of preventing surely and efficiently a damage from being generated on a surface of the structure or being developed, and capable of maintaining a preventive maintenance effect over a long period.
SOLUTION: This surface modifying device 10 for the structure of the present invention has a heater 11 for heating an executed part of the structure such as a nuclear reactor core internal structure, a heating output controller 12 for controlling a heating output from the heater 11 to be kept substantially constant, and a positioning mechanism 13 for positioning the heater 11 with respect to the executed part of the structure. The heater 11 is provided with a holding means 17 for holding a distance between the executed part of the structure and the heater 11 at substantially constant distance. The surface modifying device 10 is provided further with a driving mechanism 14 for moving the heater 11 relatively with respect to the executed part of the structure at a constant speed, and a cooler 15 for cooling forcibly the executed part of the structure at a required cooling speed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种高度可靠的表面改性技术，能够有效地防止在结构的表面上产生损伤或被开发的损伤，并且能够保持预防性维护效果长时间。解决方案：用于本发明结构的该表面修饰装置10具有加热器11，用于加热诸如核反应堆芯内部结构的结构的执行部分，加热输出控制器12，用于控制来自加热器11保持基本恒定;以及定位机构13，用于相对于结构的执行部分定位加热器11。加热器11设置有保持装置17，用于以基本上恒定的距离保持结构的执行部分和加热器11之间的距离。表面修改装置10还具有驱动机构14，用于相对于结构的执行部分以恒定速度相对移动加热器11;以及冷却器15，用于以所需的冷却强制地冷却结构的执行部分速度。版权所有（C）2005，JPO＆NCIPI

16. 发明专利

JP2005026704A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND Ti-W MATERIAL FOR MAGNETRON SPUTTERING SYSTEM 审中-公开
标题翻译：制造半导体器件的方法和用于磁控溅射系统的Ti-W材料
公开(公告)号：JP2005026704A
公开(公告)日：2005-01-27
申请号：JP2004246807
申请日：2004-08-26
申请人： Toshiba Corp , 株式会社東芝
发明人： ISHIGAMI TAKASHI , SATO MICHIO , OBATA MINORU , MIYAUCHI MASAMI , KAWAI MITSUO , YAMANOBE TAKASHI , MAKI TOSHIHIRO , YAGI NORIAKI , ANDO SHIGERU , KOBANAWA YOSHIKO
IPC分类号： C23C14/34 , H01L21/28 , H01L21/285 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To suppress leakage current of a semiconductor device, in which a film which consists of a high melting-point metal, alloy which consisting of the high melting-point metal, and silicide of the high melting-point metal, nitride of Ti, Ta, W, and Ti-W alloy, is used for a contact barrier layer or a gate electrode or the like, for obtaining a highly reliable semiconductor device.
SOLUTION: A method for manufacturing the semiconductor device includes the processes of removing Al from Ti-W material, preparing W material for a magnetron sputtering system whose concentration of Al is 1 ppm or lower, using the Ti-W material, and forming the contact barrier or the gate electrode layer, in which the Al content is suppressed to about 1×10
18 atoms/cm
3 or lower, expressed in terms of the number of the atoms, by a sputtering method. The bonding depth of a source-drain region is 0.3μm or shorter.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了抑制由高熔点金属构成的由高熔点金属构成的合金和高熔点金属的硅化物的半导体器件的漏电流金属，Ti，Ta，W和Ti-W合金的氮化物用于接触阻挡层或栅电极等，以获得高度可靠的半导体器件。解决方案：制造半导体器件的方法包括从Ti-W材料中去除Al的工艺，使用Ti-W材料制备Al的浓度为1ppm或更低的磁控溅射系统的W材料，以及形成接触屏障或栅极电极层，其中Al含量被抑制为约1×10 18原子/ cm 3 / SP> 3以下，以数字表示的原子，通过溅射法。源 - 漏区的接合深度为0.3μm以下。版权所有（C）2005，JPO＆NCIPI

17. 发明专利

JP2015034622A ボルト及びボルトの製造方法、このボルトを使用した原子炉内構造物、この原子炉内構造物の補修方法审中-公开
标题翻译：螺栓，螺栓制造方法，使用该螺栓的核反应堆内部结构以及修复该核反应堆内部结构的方法
公开(公告)号：JP2015034622A
公开(公告)日：2015-02-19
申请号：JP2013166782
申请日：2013-08-09
申请人：株式会社東芝 , Toshiba Corp
发明人： SAITO YOSHIAKI , KATAYAMA YOSHINORI , HAYASHI TAKAHIRO , OBATA MINORU
IPC分类号： F16B33/06 , F16B35/00 , G21D1/00
CPC分类号： Y02E30/40
摘要：【課題】従来の析出硬化型ニッケル基合金や冷間加工したオーステナイト系ステンレス鋼製ボルトにおいては、原子炉運転中の高温高圧水環境下において使用状況によっては亀裂が発生する可能性があった。【解決手段】本発明に係るボルト3は、高温高圧水環境下にて使用されるボルト3において、強度に優れる芯金1の外面に耐食性に優れるニッケル基合金又はステンレス鋼による耐食性層2を形成したことを特徴とする【選択図】図1
摘要翻译：要解决的问题为了解决由沉淀硬化的镍基合金或冷加工奥氏体不锈钢制成的常规螺栓的问题，根据高温高压水环境中的使用情况可能发生裂纹，其中核反应器正在运行。解决方案：根据本发明的螺栓3是在高温，高压水环境中使用的螺栓3，在芯棒1的外表面上形成耐腐蚀层2，耐腐蚀层2的强度优异使用镍基合金或耐腐蚀性优良的不锈钢。

18. 发明专利

JP2012115886A Method for welding structure 审中-公开
标题翻译：焊接结构方法
公开(公告)号：JP2012115886A
公开(公告)日：2012-06-21
申请号：JP2010269554
申请日：2010-12-02
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUDA TAKESHI , KONO WATARU , TAMURA MASAKI , OBATA MINORU , MORISHIMA YASUO , SAITO YOSHIAKI
IPC分类号： B23K26/34 , G21C19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for welding a structure, which can perform a build up welding for repairing and maintaining a structure such as a reactor pressure vessel in a short time with high efficiency and also can stably perform construction even in water.SOLUTION: After mechanically chipping off a flaw-containing part X in the structure, in which a clad layer 14 is formed on a surface of a base material 11 formed of a low-alloy steel, from the clad layer 14 side to remove the part, when the residual thickness Tc of the clad layer 14 is less than 2.3 mm, the method for welding a structure performs a build up welding by a temper bead method using laser welding, and when the residual thickness Tc of the clad layer 14 is 2.3 mm or more, the method for welding a structure performs a build up welding by normal laser welding.
摘要翻译：要解决的问题：提供一种焊接结构的方法，其可以在短时间内高效率地进行用于修复和维持诸如反应堆压力容器的结构的堆积焊接，并且还可以稳定地执行结构甚至在水里。解决方案：在将由低合金钢形成的基材11的表面上形成包覆层14的结构中，从包覆层14侧至去除该部分，当包覆层14的残余厚度Tc小于2.3mm时，用于焊接结构的方法通过使用激光焊接的回火焊珠法进行堆积焊接，并且当覆盖层的残余厚度Tc 14为2.3mm以上时，结构的焊接方法通过普通激光焊接进行堆焊。版权所有（C）2012，JPO＆INPIT

19. 发明专利

JP2008260024A Welded structure and method of welding structure 审中-公开
标题翻译：焊接结构与焊接结构方法
公开(公告)号：JP2008260024A
公开(公告)日：2008-10-30
申请号：JP2007102666
申请日：2007-04-10
申请人： Toshiba Corp , 株式会社東芝
发明人： SUMIYA RIE , OBATA MINORU , KUBO TATSUYA , ASANO MASAYUKI , ITAYA MASAO , KAWANO SHOHEI , ITO MIKIRO , SAITO TOSHIYUKI , KIKUCHI MASAAKI , ITO KIICHI , HIRASAWA HAJIME
IPC分类号： B23K31/00 , B23K9/23
摘要： PROBLEM TO BE SOLVED: To provide a welded structure constituting a highly reliable weld joint against stress corrosion cracking and to provide a method of welding the structure, by utilizing a difference of linear expansion coefficient between a material comprising a welded structure and a weld metal, adopting a plurality of weld metals, reducing tensile residual stress of a weld zone or introducing compressive residual stress, and thereby controlling residual stress distribution in the weld zone and its proximity.
SOLUTION: In the welded structure 1, a T-joint is constituted of a pair of base materials 2a, 2b and is fillet-welded with weld metals 3, wherein the weld metals 3 used are materials having a smaller linear expansion coefficient than that of the base material 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供构成高可靠性焊接接头以抵抗应力腐蚀开裂的焊接结构，并且提供一种焊接结构的方法，通过利用包括焊接结构的材料和焊接金属，采用多个焊接金属，减少焊接区域的拉伸残余应力或引入压缩残余应力，从而控制焊接区域中的残余应力分布及其接近度。解决方案：在焊接结构1中，T形接头由一对基体材料2a，2b构成，并与焊接金属3焊接，其中使用的焊接金属3是线膨胀系数较小的材料（C）2009年，JPO＆INPIT

20. 发明专利

JP2008105050A Method and apparatus for reducing residual stress 审中-公开
标题翻译：减少残余应力的方法和装置
公开(公告)号：JP2008105050A
公开(公告)日：2008-05-08
申请号：JP2006289726
申请日：2006-10-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SUMIYA RIE , KUBO TATSUYA , OBATA MINORU , SAITO TOSHIYUKI , HAYASHI TAKAHIRO
IPC分类号： B23K31/00
摘要： PROBLEM TO BE SOLVED: To provide a low-cost residual stress reducing method and apparatus while reliability of welding is secured.
SOLUTION: The residual stress of a welding structure is reduced by heating a welded surface with a heater after the welding and then by cooling it with a cooler.
COPYRIGHT: (C)2008,JPO&INPIT

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