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11. 发明申请

US20050145972A1 Tandem thin-film photoelectric transducer and its manufacturing method 审中-公开
标题翻译：串联薄膜光电传感器及其制造方法
公开(公告)号：US20050145972A1
公开(公告)日：2005-07-07
申请号：US10499176
申请日：2003-01-27
申请人： Susumu Fukuda , Yuko Tawada , Youhei Koi , Kenji Yamamoto
发明人： Susumu Fukuda , Yuko Tawada , Youhei Koi , Kenji Yamamoto
IPC分类号： C23C16/40 , H01L31/0236 , H01L31/04 , H01L31/075 , H01L31/076
CPC分类号： H01L31/076 , H01L31/02363 , H01L31/02366 , Y02E10/548
摘要： A tandem thin film photoelectric converter includes a transparent electrode, a plurality of photoelectric conversion units and back electrode deposited in sequence on a transparent insulating substrate. An intermediate layer for partially reflecting and transmitting light is inserted along at least one interface between the plurality of photoelectric conversion units. The intermediate layer has an average thickness in the range of 10 to 90 nanometers. The upper surface of the intermediate layer includes an uneven surface geometry having an average peak-to-peak pitch in the range of 10 to 50 nanometers.
摘要翻译：串联薄膜光电转换器包括依次沉积在透明绝缘基板上的透明电极，多个光电转换单元和背电极。用于部分反射和透射光的中间层沿着多个光电转换单元之间的至少一个界面被插入。中间层的平均厚度在10至90纳米的范围内。中间层的上表面包括平均峰 - 峰间距在10至50纳米范围内的不平坦表面几何形状。

12. 发明授权

US06759645B2 Hybrid thin-film photoelectric transducer and transparent laminate for the transducer 有权
标题翻译：用于换能器的混合薄膜光电传感器和透明层压板
公开(公告)号：US06759645B2
公开(公告)日：2004-07-06
申请号：US10181841
申请日：2002-07-19
申请人： Yuko Tawada , Kenji Yamamoto
发明人： Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L3100
CPC分类号： H01L31/076 , H01L31/02363 , H01L31/02366 , Y02E10/548
摘要： A hybrid-type thin film photoelectric converter includes a transparent electrode (12), at least one amorphous photoelectric conversion unit (20), at least one crystalline photoelectric conversion unit (30) and a backside electrode (40), successively stacked on a transparent glass substrate (11). The transparent electrode (12) has a thickness of more than 400 nm and less than 1000 nm. A transparent laminated body (10) including the glass substrate (11) and the transparent electrode (12) has a haze ratio of more than 2% and less than 10%.
摘要翻译：混合型薄膜光电转换器包括透明电极（12），至少一个非晶形光电转换单元（20），至少一个结晶光电转换单元（30）和背面电极（40）玻璃基板（11）。透明电极（12）的厚度大于400nm且小于1000nm。包括玻璃基板（11）和透明电极（12）的透明层叠体（10）的雾度比大于2％且小于10％。

13. 发明申请

US20090133753A1 Silicon-based thin-film photoeclectric converter and method of manufacturing the same 有权
标题翻译：硅基薄膜光电转换器及其制造方法
公开(公告)号：US20090133753A1
公开(公告)日：2009-05-28
申请号：US11991141
申请日：2006-07-25
申请人： Toshiaki Sasaki , Kenji Yamamoto
发明人： Toshiaki Sasaki , Kenji Yamamoto
IPC分类号： H01L31/00 , B05D5/12
CPC分类号： H01L31/075 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.
摘要翻译：为了提高插入导电性SiO x层的硅系薄膜光电转换器的光电转换性能，得到光限制效果，本发明的硅系薄膜光电转换元件包括：i- 氢化非晶硅或其合金的类型光电转换层，由氢化非晶硅制成的i型缓冲层和n型Si1-xOx层（x为0.25-0.6），其中缓冲层具有在与光电转换层相比的界面处的氢浓度较高，并且具有至少5nm至最多50nm的厚度。因此，在n型Si1-xOx层中促进硅晶相的产生和电阻率的降低，界面处的接触电阻降低，光电转换器的FF提高，光电转换器实现了改善的性能。

14. 发明申请

US20060174935A1 Silicon based thin film solar cell 有权
标题翻译：硅基薄膜太阳能电池
公开(公告)号：US20060174935A1
公开(公告)日：2006-08-10
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohel Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohel Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译：根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小因此，可以以低成本有效地提供硅基薄膜太阳能电池。

15. 发明授权

US07960646B2 Silicon-based thin-film photoelectric converter and method of manufacturing the same 有权
标题翻译：硅基薄膜光电转换器及其制造方法
公开(公告)号：US07960646B2
公开(公告)日：2011-06-14
申请号：US11991141
申请日：2006-07-25
申请人： Toshiaki Sasaki , Kenji Yamamoto
发明人： Toshiaki Sasaki , Kenji Yamamoto
IPC分类号： H01L31/00 , B05D5/12
CPC分类号： H01L31/075 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.
摘要翻译：为了提高插入导电性SiO x层的硅系薄膜光电转换器的光电转换性能，得到光限制效果，本发明的硅系薄膜光电转换元件包括：i- 氢化非晶硅或其合金的类型光电转换层，由氢化非晶硅制成的i型缓冲层和n型Si1-xOx层（x为0.25-0.6），其中缓冲层具有在与光电转换层相比的界面处的氢浓度较高，并且具有至少5nm至最多50nm的厚度。因此，在n型Si1-xOx层中促进硅晶相的产生和电阻率的降低，界面处的接触电阻降低，光电转换器的FF提高，光电转换器实现了改善的性能。

16. 发明授权

US11901568B2 Electrocatalyst 有权
公开(公告)号：US11901568B2
公开(公告)日：2024-02-13
申请号：US17653400
申请日：2022-03-03
申请人： Ryo Shimizu , Kumiko Nomura , Tomohiro Takeshita , Shu Miyasaka , Kenji Yamamoto
发明人： Ryo Shimizu , Kumiko Nomura , Tomohiro Takeshita , Shu Miyasaka , Kenji Yamamoto
IPC分类号： H01M4/00 , H01M4/92 , H01M4/88 , C22C5/04
CPC分类号： H01M4/926 , H01M4/8842 , C22C5/04
摘要： To provide an electrocatalyst for fuel cells, which is configured to ensure both the initial performance and durability of fuel cells. An electrocatalyst for fuel cells, wherein the electrocatalyst comprises a carbon support including a mesopore and a catalyst alloy supported on the carbon support, and the catalyst alloy is a catalyst alloy of platinum and a transition metal; wherein the mesopore includes at least one throat; wherein an average effective diameter of the at least one throat is 1.8 nm or more and less than 3.2 nm; and wherein a transition metal ratio of the catalyst alloy supported on a deeper-side region than the at least one throat, is lower than the transition metal ratio of the catalyst alloy supported on a nearer-side region than the at least one throat.

17. 发明授权

US10050257B2 Aluminum alloy foil for electrode current collectors and manufacturing method thereof 有权
公开(公告)号：US10050257B2
公开(公告)日：2018-08-14
申请号：US13995916
申请日：2011-12-12
申请人： Masakazu Seki , Satoshi Suzuki , Tomohiko Furutani , Kenji Yamamoto , Koichi Ashizawa
发明人： Masakazu Seki , Satoshi Suzuki , Tomohiko Furutani , Kenji Yamamoto , Koichi Ashizawa
IPC分类号： H01M4/00 , H01M4/04 , C22C21/00 , C22F1/04 , H01M4/66 , H01M10/0525
摘要： An aluminum alloy foil for an electrode current collectors has a high post-drying strength after application of an active material while keeping a high electrical conductivity. The aluminum alloy foil includes 0.1 to 1.0 mass % of Fe, 0.01 to 0.5% of Si, and 0.01 to 0.2 mass % of Cu, and the rest includes Al and unavoidable impurities. The aluminum alloy foil after final cold rolling has a tensile strength of 220 MPa or higher, a 0.2% yield strength of 180 MPa or higher, and an electrical conductivity of 58% IACS or higher. The aluminum alloy foil has a tensile strength of 190 MPa or higher and a 0.2% yield strength of 160 MPa or higher after the aluminum alloy foil is heat treated at any of 120° C. for 24 hours, 140° C. for 3 hours, and 160° C. for 15 minutes.

18. 发明授权

US10016798B2 Gear spindle and oil seal used therein 有权
公开(公告)号：US10016798B2
公开(公告)日：2018-07-10
申请号：US14424582
申请日：2012-08-31
申请人： Kenji Yamamoto
发明人： Kenji Yamamoto
IPC分类号： F16D3/18 , B21B35/14 , F16D3/16 , F16D3/10 , F16D3/84 , F16J15/52
CPC分类号： B21B35/147 , F16D3/10 , F16D3/16 , F16D3/185 , F16D3/845 , F16D2300/06 , F16J15/525
摘要： In a gear spindle, outer cylinder gear sections (11) are each integrally formed on an inner peripheral surface of a spindle outer cylinder and inner cylinder gear sections (14) are each integrally formed on an outer peripheral surface of a spindle inner cylinder (13). An oil seal (27) that seals in the lubricating oil (20) for each of the aforementioned gear sections includes, a seal body (29) having a channel-shaped cross section and interposed in the peripheral gap between the inner peripheral surface of the spindle outer cylinder and the outer peripheral surface of the spindle inner cylinder (13), and a seal mounting member (30) that includes a band, a spring, or the like that tightens and fixes the seal body to the outer peripheral surface of the spindle inner cylinder (13) to allow expansion of the seal body in the axial direction in the aforementioned peripheral gap.

19. 发明授权

US09902093B2 Press-forming mold and method for manufacturing protective film for press-forming mold 有权
公开(公告)号：US09902093B2
公开(公告)日：2018-02-27
申请号：US14009522
申请日：2012-04-03
申请人： Takaharu Kashi , Kenji Yamamoto
发明人： Takaharu Kashi , Kenji Yamamoto
IPC分类号： B29C33/68 , B21D37/01 , C23C14/06 , C23C14/58
CPC分类号： B29C33/68 , B21D37/01 , C23C14/0641 , C23C14/5886
摘要： A press-forming mold has a protective film for preventing seizing during press-forming formed on at least a forming surface that comes into contact with a formed body. The protective film is formed by PVD. An arbitrary selection section extracted from the surface of the protective film is divided into a plurality of individual sections; and, when the gradient of the surface at the nth division point is represented by (dZn/dXn), taking N to represent the number of divisions, the root-mean-square RΔq calculated by the following numerical expression is no greater than 0.032. R ⁢ ⁢ Δ ⁢ ⁢ q = 1 N ⁢ ∑ n = 1 N ⁢ ⁢ ( d ⁢ ⁢ Z n d ⁢ ⁢ X n ) 2 It is thereby possible to improve the seizing resistance of a press-forming mold having a protective film formed by PVD.

20. 发明授权

US09546408B2 Quenching method for steel pipe 有权
标题翻译：钢管淬火方法
公开(公告)号：US09546408B2
公开(公告)日：2017-01-17
申请号：US14005853
申请日：2012-03-13
申请人： Akihiro Sakamoto , Kazuo Okamura , Kenji Yamamoto , Tomohiko Omura , Yuji Arai
发明人： Akihiro Sakamoto , Kazuo Okamura , Kenji Yamamoto , Tomohiko Omura , Yuji Arai
IPC分类号： C21D1/18 , C21D1/19 , C21D6/00 , C21D9/08 , C22C38/00 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/48 , C22C38/18 , C22C38/40 , C22C1/02
CPC分类号： C21D1/18 , C21D1/19 , C21D6/002 , C21D9/08 , C21D2221/00 , C22C1/02 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/18 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/40 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/48
摘要： A method for quenching a steel pipe by water cooling from an outer surface thereof, where pipe end portions are not subjected to water cooling, and at least part of a main body other than the pipe end portions is subjected to water cooling. A region(s) that is not subjected to direct water cooling over an entire circumference thereof can be along an axial direction at least in part of the main body other than the pipe end portions. The start and stop of water cooling can be intermittent at least in part of the quenching. During the water cooling of the pipe outer surface, an intensified water cooling can be performed in a temperature range in which the pipe outer surface temperature is higher than Ms point. Thereafter, the cooling can be switched to moderate cooling so that the outer surface is cooled down to Ms point or lower.
摘要翻译：通过水管从其外表面进行水冷淬火的方法，其中管端部不进行水冷，至少部分管端部以外的主体进行水冷。在其整个圆周上不经受直接水冷却的区域可以沿除了管端部以外的主体的至少一部分的轴向方向。水冷却的开始和停止至少部分地可以是间歇性的淬火。在管外表面的水冷却期间，可以在管外表面温度高于Ms点的温度范围内进行增强的水冷。此后，可以将冷却切换到适度的冷却，使得外表面冷却至Ms点或更低。

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