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11. 发明授权

US06291129B1 Monomer, high molecular compound and photosensitive composition 失效
标题翻译：单体，高分子化合物和感光组合物
公开(公告)号：US06291129B1
公开(公告)日：2001-09-18
申请号：US09143533
申请日：1998-08-28
申请人： Naomi Shida , Toru Ushirogouchi , Koji Asakawa , Takeshi Okino , Shuji Hayase , Yoshihiko Nakano , Makoto Nakase
发明人： Naomi Shida , Toru Ushirogouchi , Koji Asakawa , Takeshi Okino , Shuji Hayase , Yoshihiko Nakano , Makoto Nakase
IPC分类号： G03C173
CPC分类号： G03F7/0397 , C08F246/00 , G03F7/0045 , G03F7/039 , G03F7/0758 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.
摘要翻译：由以下通式（m-1）表示的单体：其中R是具有脂环骨架的基团，R 2可以相同或不同，分别为氢原子，卤素原子或一价有机基团，X 1为二价有机基团含有杂原子，j为0〜3的整数，R1为选自下列基团的基团，具有Si（R1-1）的一价有机基团，X2和X3中的任一个为含有杂原子的二价有机基团，k m为0〜3的整数，R4为二价烷基，R6可以相同或不同，分别为氢原子，卤素原子或一价有机基团。

12. 发明授权

US6071670A Transparent resin, photosensitive composition, and method of forming a pattern 失效
标题翻译：透明树脂，感光性组合物和形成图案的方法
公开(公告)号：US6071670A
公开(公告)日：2000-06-06
申请号：US948425
申请日：1997-10-10
申请人： Toru Ushirogouchi , Takeshi Okino , Naomi Shida , Makoto Nakase , Yoshiaki Kawamonzen , Rumiko Hayase , Koji Asakawa
发明人： Toru Ushirogouchi , Takeshi Okino , Naomi Shida , Makoto Nakase , Yoshiaki Kawamonzen , Rumiko Hayase , Koji Asakawa
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/107 , Y10S430/109
摘要： A photosensitive composition comprising, an oligomer having a backbone chain comprising an alicyclic skeleton and/or a conjugated polycondensed aromatic skeleton, the backbone chain being acid-decomposable or hydrolyzable, and a photo-acid-generating agent.
摘要翻译：一种光敏组合物，其包含具有包含脂环骨架和/或共轭缩聚芳族骨架的主链的低聚物，所述主链是酸可分解的或可水解的，以及光酸产生剂。

13. 发明授权

US6045968A Photosensitive composition 失效
标题翻译：感光组合物
公开(公告)号：US6045968A
公开(公告)日：2000-04-04
申请号：US98537
申请日：1998-06-17
申请人： Toru Ushirogouchi , Koji Asakawa , Makoto Nakase , Naomi Shida , Takeshi Okino
发明人： Toru Ushirogouchi , Koji Asakawa , Makoto Nakase , Naomi Shida , Takeshi Okino
IPC分类号： C08L61/04 , C08L61/10 , G03F7/004 , G03F7/023 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0236 , Y10S430/106 , Y10S430/111
摘要： A photosensitive composition contains an acid-decomposable resin, a photo-acid-generating agent, and a naphthol novolak compound with a molecular weight of 2000 or less. The acid-decomposable resin is preferably a copolymer consisting of a polymerizable compound having an alicyclic skeleton as a monomer.
摘要翻译：感光性组合物含有酸分解性树脂，光酸产生剂和分子量为2000以下的萘酚酚醛清漆化合物。酸分解性树脂优选为具有作为单体的脂环式骨架的聚合性化合物的共聚物。

14. 发明授权

US5837419A Photosensitive composition 失效
公开(公告)号：US5837419A
公开(公告)日：1998-11-17
申请号：US705260
申请日：1996-08-29
申请人： Toru Ushirogouchi , Koji Asakawa , Makoto Nakase , Naomi Shida , Takeshi Okino
发明人： Toru Ushirogouchi , Koji Asakawa , Makoto Nakase , Naomi Shida , Takeshi Okino
IPC分类号： C08L61/04 , C08L61/10 , G03F7/004 , G03F7/023 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0236 , Y10S430/106 , Y10S430/111
摘要： A photosensitive composition contains an acid-decomposable resin, a photo-acid-generating agent, and a naphthol novolak compound with a molecular weight of 2000 or less. The acid-decomposable resin is preferably a copolymer consisting of a polymerizable compound having an alicyclic skeleton as a monomer.

15. 发明授权

US5863699A Photo-sensitive composition 失效
标题翻译：光敏组合物
公开(公告)号：US5863699A
公开(公告)日：1999-01-26
申请号：US728388
申请日：1996-10-09
申请人： Koji Asakawa , Toru Ushirogochi , Naomi Shida , Makoto Nakase
发明人： Koji Asakawa , Toru Ushirogochi , Naomi Shida , Makoto Nakase
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/115 , Y10S430/123 , Y10S430/128
摘要： A photosensitive composition for forming a pattern through a light-exposure with either one of ArF excimer laser and F.sub.2 excimer laser, which comprises a compound having either an acid-decomposable or acid-crosslinkable group, and a compound represented by the following general formula (1): ##STR1## wherein Ar.sup.1 and Ar.sup.2 are individually an aromatic ring or condensed aromatic ring, R.sup.1 and R.sup.2 are individually halogen atoms or monovalent organic group, X is a group selected from the group consisting of CF.sub.3 SO.sub.3, CH.sub.3 SO.sub.3, CF.sub.3 COOH, ClO.sub.4, SbF.sub.6 and AsF.sub.6, Z is a group selected from the group consisting of Cl, Br, I, S--R and Se--R (R is an alkyl group having 1 to 10 carbon atoms or perfluoroalkyl group having 1 to 10 carbon atoms), and m and n are 0 or a positive integer.
摘要翻译：用ArF受激准分子激光器和F2准分子激光器中的任一种通过曝光形成图案的光敏组合物，其包含具有酸分解性或酸交联性基团的化合物和由以下通式表示的化合物 1）：其中Ar1和Ar2分别为芳环或稠合芳环，R1和R2分别为卤素原子或一价有机基团，X为选自CF 3 SO 3，CH 3 SO 3，CF 3 COOH的基团，ClO 4，SbF 6和AsF 6，Z为选自Cl，Br，I，SR和Se-R（R为碳原子数1〜10的烷基或碳原子数1〜10的全氟烷基），m和n为0或正整数。

16. 发明授权

US5589305A Method of fabricating a reticle 失效
标题翻译：制作掩模版的方法
公开(公告)号：US5589305A
公开(公告)日：1996-12-31
申请号：US453465
申请日：1995-05-30
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

17. 发明授权

US5358808A Exposure mask, method of manufacturing the same, and exposure method using the same 失效
标题翻译：曝光掩模，其制造方法和使用其的曝光方法
公开(公告)号：US5358808A
公开(公告)日：1994-10-25
申请号：US94442
申请日：1993-07-21
申请人： Akihiro Nitayama , Makoto Nakase , Kouji Hishimoto , Hirotsugu Wada
发明人： Akihiro Nitayama , Makoto Nakase , Kouji Hishimoto , Hirotsugu Wada
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/29
摘要： An exposure mask for lithography, a method of manufacturing the same, and an exposure method using the same are disclosed. A light-transmitting opening of the exposure mask has a main light-transmitting region located in the middle of the opening and having a first optical path length, and phase shift regions adjacent to a light-shielding layer and having a second optical path length, different from the first optical path length. Light transmitted through each phase shift region interferes with light transmitted through the main light-transmitting region at the edges of the light-transmitting opening, thus enabling a sharp photo-intensity distribution of total transmitted light to be obtained. As a result, the resolution of the exposure mask is improved.
摘要翻译：公开了一种用于光刻的曝光掩模，其制造方法和使用其的曝光方法。曝光掩模的透光开口具有位于开口中间并具有第一光程长度的主透光区域和与遮光层相邻并且具有第二光程长度的相移区域，不同于第一光路长度。透过各相移区域的光干涉透过透光开口边缘的主透光区域的光，从而能够得到总透光的尖锐的光强度分布。结果，改善了曝光掩模的分辨率。

18. 发明授权

US5660956A Reticle and method of fabricating reticle 失效
标题翻译：刻线及其制作方法
公开(公告)号：US5660956A
公开(公告)日：1997-08-26
申请号：US608946
申请日：1996-02-29
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

19. 发明授权

US5595844A Method of exposing light in a method of fabricating a reticle 失效
标题翻译：在制作掩模版的方法中曝光光的方法
公开(公告)号：US5595844A
公开(公告)日：1997-01-21
申请号：US453667
申请日：1995-05-30
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

20. 发明授权

US5756254A Resist, method of forming a resist pattern and manufacturing an electronic parts using the resist 失效
标题翻译：抗蚀剂，形成抗蚀剂图案的方法和使用该抗蚀剂制造电子部件
公开(公告)号：US5756254A
公开(公告)日：1998-05-26
申请号：US654215
申请日：1996-05-28
申请人： Naoko Kihara , Satoshi Saito , Hiromitsu Wakabayashi , Makoto Nakase , Masayuki Oba
发明人： Naoko Kihara , Satoshi Saito , Hiromitsu Wakabayashi , Makoto Nakase , Masayuki Oba
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： A resist comprising a sulfonyl compound represented by the following general formula (1): ##STR1## wherein R.sup.1 is a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.2 is a halogen atom, nitro group, cyano group or a monovalent organic group, R.sup.3 is a bivalent organic group, and n is an integer of 2 or more. The R.sup.3 in the general formula (1) is preferably a bivalent organic group represented by the general formula (2): ##STR2## wherein R.sup.21, R.sup.22, R.sup.23, R.sup.24, R.sup.25 and R.sup.26 may be the same or different and are individually a hydrogen atom, a halogen atom, nitro group, cyano group or a monovalent organic group, and Z is a bivalent organic group.
摘要翻译：包含由以下通式（1）表示的磺酰基化合物的抗蚀剂：其中R1是氢原子，卤素原子，硝基，氰基或一价有机基团，R2是卤素原子，硝基，氰基或一价有机基团，R 3为二价有机基团，n为2以上的整数。通式（1）中的R 3优选为由通式（2）表示的二价有机基团：其中R 21，R 22，R 23，R 24，R 25和R 26可以相同或不同，为分别为氢原子，卤素原子，硝基，氰基或一价有机基团，Z为二价有机基团。

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