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11. 发明申请

US20070096189A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070096189A1
公开(公告)日：2007-05-03
申请号：US11594780
申请日：2006-11-09
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L28/40 , H01L28/60 , H01L29/513
摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
摘要翻译：为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

12. 发明授权

US06960832B2 Semiconductor device and its production process 失效
标题翻译：半导体器件及其生产工艺
公开(公告)号：US06960832B2
公开(公告)日：2005-11-01
申请号：US10761333
申请日：2004-01-22
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
IPC分类号： H01L21/285 , H01L21/336 , H01L21/768 , H01L23/12 , H01L21/00
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76877
摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
摘要翻译：在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

13. 发明申请

US20050079667A1 Semiconductor device and production method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050079667A1
公开(公告)日：2005-04-14
申请号：US10503350
申请日：2003-02-05
申请人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
发明人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8244 , H01L21/8247 , H01L27/11 , H01L27/115 , H01L29/49 , H01L29/78 , H01L29/788 , H01L29/792 , H01L21/425 , H01L21/8234 , H01L21/8238 , H01L29/76 , H01L29/94
CPC分类号： H01L29/6659 , H01L21/26513 , H01L29/4925 , H01L29/4983 , H01L29/7833
摘要： A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.
摘要翻译：提供了具有高可靠性的半导体器件。本发明的第二个目的是提供一种高产率的半导体器件。半导体包括硅衬底，形成在硅衬底的一个主表面上的栅极电介质膜，通过层叠在栅极电介质膜上形成的栅电极和含有砷和磷的扩散层。砷的最高浓度部分的浓度和磷的最高浓度部分的浓度分别为10 26个/ m 3以上且10 27个/ m 3以下，并且来自硅衬底的表面的磷的最高浓度部分的深度小于砷的最高浓度部分的深度。

14. 发明授权

US06856021B1 Semiconductor device having aluminum alloy conductors 失效
标题翻译：具有铝合金导体的半导体器件
公开(公告)号：US06856021B1
公开(公告)日：2005-02-15
申请号：US09648455
申请日：2000-08-28
申请人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
发明人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： H01L21/76844 , H01L21/32051 , H01L21/76843 , H01L21/7685 , H01L23/53219 , H01L23/53223 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.
摘要翻译：提供了一种半导体器件，其包括半导体衬底，形成在衬底的主面一侧的金属导体，该金属导体以铝为主要成分，铜作为添加元素，金属导体被制成含有抑制铜的析出或使金属导体附近具有这样的膜的元素，以抑制铜的沉淀，或者使该膜与金属导体相邻，以抑制铜的析出。

15. 发明授权

US06489648B2 Semiconductor device 有权
公开(公告)号：US06489648B2
公开(公告)日：2002-12-03
申请号：US09944485
申请日：2001-08-30
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L27108
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L27/10873 , H01L28/56 , H01L28/57 , H01L29/4975 , H01L29/513
摘要： A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

16. 发明授权

US07537858B2 Catalyst structure and fuel cell having the same 有权
标题翻译：催化剂结构和具有相同的燃料电池
公开(公告)号：US07537858B2
公开(公告)日：2009-05-26
申请号：US10872456
申请日：2004-06-22
申请人： Tomio Iwasaki , Hideo Miura
发明人： Tomio Iwasaki , Hideo Miura
IPC分类号： H01M4/86
CPC分类号： H01M4/926 , F01N3/2053 , F01N13/009 , F01N13/0093 , H01M4/86 , H01M4/8636 , H01M4/90 , H01M4/921 , H01M2008/1095 , Y02E60/324
摘要： The present invention provides a catalyst structure of high catalytic activity and a fuel cell of high cell output. The catalyst structure comprises a conductive film and catalyst particles formed on the conductive film wherein the difference between lattice constant of a material constituting the conductive film and that of a material constituting the catalyst particles is not more than 16%, and preferably not less than 3%.
摘要翻译：本发明提供催化活性高的催化剂结构和高电池输出的燃料电池。催化剂结构包括形成在导电膜上的导电膜和催化剂颗粒，其中构成导电膜的材料的晶格常数与构成催化剂颗粒的材料的晶格常数之间的差异不大于16％，优选不小于3 ％。

17. 发明申请

US20080061384A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080061384A1
公开(公告)日：2008-03-13
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/78
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

18. 发明授权

US07141840B2 Semiconductor device and production method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07141840B2
公开(公告)日：2006-11-28
申请号：US10503350
申请日：2003-02-05
申请人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
发明人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
IPC分类号： H01L31/112
CPC分类号： H01L29/6659 , H01L21/26513 , H01L29/4925 , H01L29/4983 , H01L29/7833
摘要： A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.
摘要翻译：提供了具有高可靠性的半导体器件。本发明的第二个目的是提供一种高产率的半导体器件。半导体包括硅衬底，形成在硅衬底的一个主表面上的栅极电介质膜，通过层叠在栅极电介质膜上形成的栅电极和含有砷和磷的扩散层。砷的最高浓度部分的浓度和磷的最高浓度部分的浓度都分别为10 26原子/ m 3以上且10以下 > 27原子/ m 3以下，并且来自硅衬底表面的磷的最高浓度部分的深度小于砷的最高浓度部分的深度。

19. 发明授权

US07084477B2 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07084477B2
公开(公告)日：2006-08-01
申请号：US10600771
申请日：2003-06-23
申请人： Norio Ishitsuka , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Masahito Takahashi , Norio Suzuki , Shuji Ikeda , Hideki Tanaka , Hiroyuki Mima
发明人： Norio Ishitsuka , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Masahito Takahashi , Norio Suzuki , Shuji Ikeda , Hideki Tanaka , Hiroyuki Mima
IPC分类号： H01L29/00
CPC分类号： H01L27/11526 , H01L21/28123 , H01L21/76224 , H01L21/823481 , H01L27/105 , H01L27/11546
摘要： To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.
摘要翻译：为了抑制在半导体衬底中发生的缺陷，半导体器件通过具有：半导体衬底; 具有形成在所述半导体衬底中的沟槽的元件隔离区域和嵌入所述沟槽中的嵌入绝缘膜; 形成在元件隔离区域附近形成的有源区，其中形成栅极绝缘膜并在栅极绝缘膜上形成栅电极; 以及形成为使得栅电极的至少一部分位于元件隔离区域上的区域，以及在栅电极为第一元件隔离区域的嵌入绝缘膜的上侧的第一边缘表面定位在位于绝缘膜的第二边缘表面上方的第二元件隔离区域中，栅极电极膜未被定位。

20. 发明授权

US07064437B2 Semiconductor device having aluminum conductors 失效
公开(公告)号：US07064437B2
公开(公告)日：2006-06-20
申请号：US10184932
申请日：2002-07-01
申请人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
发明人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
IPC分类号： H01L23/48 , H01L29/94
CPC分类号： H01L21/76844 , H01L21/32051 , H01L21/76843 , H01L21/7685 , H01L23/53219 , H01L23/53223 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device having high reliability, high yield, and such a interconnection structure as short hardly occurs. The semiconductor device comprises a semiconductor substrate, metal conductors formed on a side of a main face of the substrate which metal conductors contain aluminum as main constituent thereof and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

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