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11. 发明专利

JP2010156941A Positive resist composition and resist pattern forming method 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2010156941A
公开(公告)日：2010-07-15
申请号：JP2009130554
申请日：2009-05-29
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： MATSUMIYA YU , SHIONO HIROHISA , HIRANO TOMOYUKI , DAZAI NAOHIRO , ENDO KOTARO
IPC分类号： G03F7/039 , C08F220/38 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having excellent lithography characteristics and heat resistance, and to provide a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition includes a base component (A) which exhibits increased solubility in an alkali developer under the action of an acid and an acid generator component (B) which generates an acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a (meth)acrylate unit (a0) having an oxocarbonyl group in a side chain, a (meth)acrylate unit (a1) containing an acid dissociable, dissolution inhibiting group, and a (meth)acrylate unit (a3) having a 1-adamantyl group in a side chain, wherein the proportion of the constitutional unit (a3) to all constitutional units constituting the polymeric compound (A1) is within a range of 1-30 mol%. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的光刻特性和耐热性的正性抗蚀剂组合物，并提供使用正性抗蚀剂组合物的抗蚀剂图案形成方法。正型抗蚀剂组合物包括在酸和在曝光时产生酸的酸产生剂组分（B）的作用下在碱显影剂中表现出增加的溶解度的碱组分（A），其中所述碱组分 A）包括具有在侧链具有氧羰基的（甲基）丙烯酸酯单元（a0）的聚合化合物（A1），含有酸解离性，溶解抑制基团的（甲基）丙烯酸酯单元（a1）和（甲基））丙烯酸酯单元（a3）在侧链中具有1-金刚烷基，其中构成单元（a3）与构成高分子化合物（A1）的全部构成单元的比例在1-30摩尔％的范围内。版权所有（C）2010，JPO＆INPIT

12. 发明专利

JP2006194962A Material for forming protective film, laminate and resist pattern forming method 有权
标题翻译：形成保护膜，层压和电阻图案形成方法的材料
公开(公告)号：JP2006194962A
公开(公告)日：2006-07-27
申请号：JP2005003807
申请日：2005-01-11
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA , ENDO KOTARO , IWASHITA ATSUSHI
IPC分类号： G03F7/11 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a material for forming a protective film capable of forming a protective film excellent in substance shielding property, and to provide a laminated body and a resist pattern forming method using the material for forming a protective film. SOLUTION: The material for forming a protective film removable with an alkaline developer for a resist layer is obtained by dissolving in an organic solvent an alkali-soluble resin (A1) including a constitutional unit (a0-1) derived from acrylic acid, having no cyclic structure and having an alcoholic hydroxyl group in a side chain and a constitutional unit (a1) including an alicyclic group having a fluorinated hydroxyalkyl group. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成能够形成物理屏蔽性优异的保护膜的保护膜的材料，并提供使用该保护膜形成材料的层压体和抗蚀剂图案形成方法。解决方案：用于形成用于抗蚀剂层的碱性显影剂可除去的保护膜的材料是通过在有机溶剂中溶解包含由丙烯酸衍生的结构单元（a0-1）的碱溶性树脂（A1）不具有环状结构并且在侧链中具有醇羟基和包含具有氟化羟烷基的脂环基的结构单元（a1）。版权所有（C）2006，JPO＆NCIPI

13. 发明专利

JP2006184575A Material for forming resist protective film and resist pattern forming method using same 有权
标题翻译：用于形成耐蚀膜的材料及其形成方法
公开(公告)号：JP2006184575A
公开(公告)日：2006-07-13
申请号：JP2004378235
申请日：2004-12-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA , ENDO KOTARO , HIRANO TOMOYUKI
IPC分类号： G03F7/11 , C08F220/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a material for forming a resist protective film which simultaneously prevents deterioration in a resist film during liquid immersion lithography using water or other various liquids for liquid immersion lithography and deterioration in the liquid itself for liquid immersion lithography used in a liquid immersion lithography process, does not increase the number of processing steps, and improves the post exposure time delay resistance of the resist film.
SOLUTION: The material for forming a resist protective film contains at least an acrylic polymer having at least a constitutional unit represented by formula (1) (where R
1 is a 1-5C linear or branched alkylene, and R
2 is a 1-15C linear or branched alkyl or a hydrocarbon group having an alicyclic structure) and a solvent.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成抗蚀剂保护膜的材料，其同时防止在使用水或其它各种液体浸液光刻的液浸光刻期间抗蚀剂膜的劣化以及用于液浸光刻的液体本身的劣化用于液浸光刻工艺中，不会增加加工步骤的数量，并且提高抗蚀剂膜的曝光后延迟电阻。解决方案：用于形成抗蚀剂保护膜的材料至少含有至少具有由式（1）表示的结构单元的丙烯酸类聚合物（其中R 1 为直链或支链的1-5C 亚烷基和R SB 2是具有脂环结构的1-15C直链或支链烷基或烃基）和溶剂。版权所有（C）2006，JPO＆NCIPI

14. 发明专利

JP2013190676A Solvent-developable negative resist composition and method for forming resist pattern 有权
标题翻译：可溶性发展负极性组合物和形成耐药性图案的方法
公开(公告)号：JP2013190676A
公开(公告)日：2013-09-26
申请号：JP2012057692
申请日：2012-03-14
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KUROSAWA TSUYOSHI , ENDO KOTARO , IWASAWA YUTA , SENZAKI TAKAHIRO
IPC分类号： G03F7/038 , C08F220/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a solvent-developable negative resist composition and a method for forming a resist pattern.SOLUTION: There is provided a solvent-developable negative resist composition which is a resist composition used for a method for forming a resist pattern which includes: a step of forming a resist film on a support using a resist composition containing a base material component (A) whose solubility in an organic solvent decreases by the action of an acid and an acid generator component (B) capable of generating an acid upon exposure; a step of exposing the resist film; and a step of forming a resist pattern by patterning the resist film by negative development using a developer containing the organic solvent, wherein the base material component (A) contains a resin component (A1) containing a structural unit (a0-1) including a 3 to 7-membered ether-containing cyclic group, a structural unit (a0-2) including a 4 to 12-membered lactone-containing cyclic group or 5 to 7-membered carbonate-containing cyclic group and a structural unit (a1) including an acid decomposable group whose polarity increases by the action of an acid.
摘要翻译：要解决的问题：提供可溶性可显影的负性抗蚀剂组合物和形成抗蚀剂图案的方法。溶液：提供了一种溶剂显影性负性抗蚀剂组合物，其是用于形成抗蚀剂图案的方法的抗蚀剂组合物，包括：使用含有基材成分（A）的抗蚀剂组合物在载体上形成抗蚀剂膜的工序，其中，所述基材成分（A）在有机溶剂中的溶解度通过酸和酸产生剂组分（B）的作用而降低，所述酸和酸产生剂组分曝光后暴露抗蚀剂膜的步骤; 以及通过使用含有有机溶剂的显影剂通过负显影对抗蚀剂图案形成抗蚀剂图案的步骤，其中，所述基材成分（A）含有含有包含结构单元（a0-1）的树脂成分（A1） 3〜7元含醚环状基团，含有4〜12元含内酯环状基团或5〜7元含碳原子的环状基团的结构单元（a0-2）和包含通过酸的作用使极性增加的酸分解基团。

15. 发明专利

JP2013068927A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2013068927A
公开(公告)日：2013-04-18
申请号：JP2012105953
申请日：2012-05-07
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KUROSAWA TSUYOSHI , ENDO KOTARO , IWASAWA YUTA , KOMURO YOSHITAKA , KAWAKAMI AKINARI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition excellent in both of depth of focus (DOF) characteristics and a mask error factor (MEF), and to provide a method for forming resist pattern.SOLUTION: The resist composition comprises: a base component (A) showing changes in solubility with a developing solution by an action of an acid, an acid generator component (B) for generating an acid by exposure; and a compound (D1) including a cation moiety having a quaternary nitrogen atom and an anion moiety expressed by the formula (d1-an1) or the formula (d1-an2). In the formulae, X represents a 3-30C cyclic aliphatic hydrocarbon group which may have a substituent; and Yrepresents a 1-4C fluorinated alkylene group which may have a substituent.
摘要翻译：要解决的问题：为了提供在焦深（DOF）特性和掩模误差因子（MEF）两方面都优异的抗蚀剂组合物，并提供形成抗蚀剂图案的方法。抗蚀剂组合物包括：通过酸的作用显示出与显影液的溶解度变化的基础组分（A），用于通过曝光产生酸的酸产生剂组分（B）; 和包含具有季氮原子的阳离子部分和由式（d1-an1）或式（d1-an2）表示的阴离子部分的化合物（D1）。在该式中，X表示可具有取代基的3-30C环状脂族烃基; Y 1 表示可以具有取代基的1-4C氟化亚烷基。版权所有（C）2013，JPO＆INPIT

16. 发明专利

JP2012242800A Positive resist composition and method for forming resist pattern 有权
标题翻译：积极抗性组合物和形成耐药模式的方法
公开(公告)号：JP2012242800A
公开(公告)日：2012-12-10
申请号：JP2011116132
申请日：2011-05-24
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： IWASAWA YUTA , ENDO KOTARO , KUROSAWA TSUYOSHI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition capable of reducing defects and to provide a method for forming a resist pattern using the resist composition.SOLUTION: The positive resist composition includes: a base component (A) the solubility of which with an alkali developing solution increases by an action of an acid; an acid generator component (B) generating an acid by exposure; a fluorine-containing compound component (F); and a photosensitizer (G). The fluorine-containing compound component (F) preferably includes a resin component (F1) having a structural unit (f1) containing a fluorine atom, the structural unit derived from an acrylate in which an atom except for a hydrogen atom or a substituent may be bonded to a carbon atom at an α-position; and the structural unit (f1) is preferably a structural unit expressed by formula (f1-1).
摘要翻译：要解决的问题：提供能够减少缺陷的正性抗蚀剂组合物，并提供使用该抗蚀剂组合物形成抗蚀剂图案的方法。正型抗蚀剂组合物包括：碱性组分（A），其与碱性显影溶液的溶解度通过酸的作用而增加; 通过暴露产生酸的酸发生剂组分（B）含氟化合物成分（F）; 和光敏剂（G）。含氟化合物组分（F）优选包括具有含氟原子的结构单元（f1）的树脂组分（F1），衍生自除氢原子或取代基以外的原子的丙烯酸酯的结构单元与α-位上的碳原子键合; 结构单元（f1）优选为由式（f1-1）表示的结构单元。版权所有（C）2013，JPO＆INPIT

17. 发明专利

JP2012220570A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2012220570A
公开(公告)日：2012-11-12
申请号：JP2011083797
申请日：2011-04-05
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KUROSAWA TSUYOSHI , ENDO KOTARO , IWASAWA YUTA
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a method for forming a resist pattern, by which a resist pattern in a good shape with high rectangularity can be formed.SOLUTION: There is provided a resist composition including: a base component whose solubility in a developing solution changes by an action of an acid; an acid generator represented by general formula (b1); and an acid generator represented by general formula (b2). In formula (b1), Qrepresents a divalent connecting group including an oxygen atom; Yrepresents a 1-4C alkylene group or a fluorinated alkylene group which may have a substituent; and X represents a 3-30C alicyclic hydrocarbon group which may have a substituent. In formula (b2), Rrepresents a monovalent linear aliphatic hydrocarbon group including a hetero atom at any position; Yrepresents a 1-4C alkylene group or a fluorinated alkylene group which may have a substituent; and Arepresents an organic cation.
摘要翻译：要解决的问题：提供一种抗蚀剂组合物和形成抗蚀剂图案的方法，由此可以形成具有高矩形性的良好形状的抗蚀剂图案。解决方案：提供一种抗蚀剂组合物，其包含：其在显影液中的溶解度随着酸的作用而变化的碱成分; 由通式（b1）表示的酸发生剂; 和由通式（b2）表示的酸发生剂。在式（b1）中，Q 1 表示包含氧原子的二价连接基团; Y 1 表示可以具有取代基的1-4C亚烷基或氟化亚烷基; X表示可具有取代基的3-30C脂环族烃基。在式（b2）中，R 1表示在任意位置含有杂原子的一价直链脂族烃基; Y表示可以具有取代基的1-4C亚烷基或氟化亚烷基; 并且A + 表示有机阳离子。版权所有（C）2013，JPO＆INPIT

18. 发明专利

JP2011085878A Resist composition, method for forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案，新型化合物和酸产生剂的方法
公开(公告)号：JP2011085878A
公开(公告)日：2011-04-28
申请号：JP2009270085
申请日：2009-11-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , UTSUMI YOSHIYUKI , HANEDA HIDEO , SESHIMO TAKEHIRO , MATSUZAWA KENSUKE , ISHIZUKA KEITA , ENDO KOTARO
IPC分类号： G03F7/004 , C07C309/06 , C07C381/12 , C08F20/10 , G03F7/039 , H01L21/027
CPC分类号： C07D327/04 , C07D307/33 , C07D307/93 , C07D307/94 , C07D309/30 , C07D409/12 , C07D493/18 , C07D497/18 , G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a novel compound useful as an acid generator for resist composition, the acid generator formed of the compound, the resist composition containing the acid generator, and a method for forming a resist pattern using the resist composition.
SOLUTION: The resist composition contains a base component (A) whose solubility to an alkali developer changes by the action of an acid, and an acid generator component (B) which generates the acid by exposure. The acid generator component (B) contains an acid generator (B1) formed of a compound having a group represented by general formula (I) in a cation part, wherein R
5 represents an organic group having a carbonyl group, an ester bond or a sulfonyl group, and Q represents a divalent linking group.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：待解决的问题：为了提供可用作抗蚀剂组合物的酸发生剂的新型化合物，由化合物形成的酸产生剂，含有酸产生剂的抗蚀剂组合物和使用该抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：抗蚀剂组合物含有其碱性显影剂通过酸的作用而变化的碱成分（A）和通过曝光产生酸的酸产生剂组分（B）。酸产生剂组分（B）含有在阳离子部分由具有通式（I）表示的基团的化合物形成的酸产生剂（B1），其中R 5表示具有羰基的有机基团基团，酯键或磺酰基，Q表示二价连接基团。版权所有（C）2011，JPO＆INPIT

19. 发明专利

JP2009242797A Norbornene polymer, its composition, and lithography method using the composition 有权
标题翻译： NORBORNENE聚合物，其组合物和使用组合物的平版印刷方法
公开(公告)号：JP2009242797A
公开(公告)日：2009-10-22
申请号：JP2009061467
申请日：2009-03-13
申请人： Promerus Llc , Tokyo Ohka Kogyo Co Ltd , プロメラス, エルエルシー , 東京応化工業株式会社
发明人： RHODES LARRY F , CHANG CHUN , KANDANARACHCHI PRAMOD , SEGER LAWRENCE D , ISHIZUKA KEITA , ENDO KOTARO , ANDO TOMOYUKI
IPC分类号： C08F32/08 , C08F34/00 , C09D123/24 , G03F7/039 , G03F7/11 , G03F7/38 , H01L21/027
CPC分类号： G03F7/11 , C08F232/08 , C08G61/06 , G03F7/0395 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide non-self developing type and developing type norbornene polymers applicable to a liquid-immersion lithography process, a manufacturing methods for the polymers, a composition using the polymer, and the liquid-immersion lithography process using the composition. SOLUTION: The non-self developing type and developing type norbornene polymers useful for the liquid-immersion lithography process, the method for manufacturing such polymers, the composition using such a polymer, and the liquid-immersion lithography process using such a composition, are provided. In more details, there are provided: a norbornene polymer which is useful to form a developing layer and a topcoat layer to cover the developing layer in the liquid-immersion lithography process; and its process. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适用于液浸光刻工艺的非自发显影型和显影型降冰片烯聚合物，聚合物的制造方法，使用该聚合物的组合物和使用液浸光刻工艺组成。解决方案：可用于液浸光刻工艺的非自显影型和显影型降冰片烯聚合物，制备这种聚合物的方法，使用这种聚合物的组合物和使用这种组合物的液浸光刻工艺，提供。更详细地，提供了：在液浸光刻工艺中可用于形成显影层和顶涂层以覆盖显影层的降冰片烯聚合物; 及其过程。版权所有（C）2010，JPO＆INPIT

20. 发明专利

JP2005284238A Method for forming positive type resist composition for immersion exposure and resist pattern 有权
标题翻译：用于形成浸渍曝光和耐蚀图案的正型耐腐蚀组合物的方法
公开(公告)号：JP2005284238A
公开(公告)日：2005-10-13
申请号：JP2004170424
申请日：2004-06-08
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： ISHIZUKA KEITA , ENDO KOTARO
IPC分类号： G03F7/039 , C08F220/10 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/28 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a positive type resist composition for immersion exposure and a resist pattern, particularly the positive type resist composition for immersion exposure having a tolerance to liquid immersion superior in a water cutoff performance, and the resist pattern using the resist composition. SOLUTION: The positive type resist composition for immersion exposure contains (A) a resin component of which alkali solubility is increased by the action of acid, and (B) an acid generating agent that generates acid by exposure. The resist composition is characterized in that the resin component (A) contains at least acrylic ester unit (a1) and (meta) acrylic ester unit (a2) having an acid dissociative solution inhibition group, and that the unit (a1) is composed of a cyclic group coupled with the acrylic ester of the unit (a1) and a fluorinated organic group of a particular structure coupled with the cyclic group. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成浸渍曝光用正型抗蚀剂组合物和抗蚀剂图案的方法，特别是具有耐水分性能优异的浸渍耐受性的浸渍曝光用正型抗蚀剂组合物，以及使用抗蚀剂组合物的抗蚀剂图案。解决方案：用于浸渍曝光的正型抗蚀剂组合物含有（A）通过酸的作用使碱溶解度增加的树脂成分，（B）通过曝光产生酸的酸产生剂。抗蚀剂组合物的特征在于，树脂成分（A）至少含有具有酸解离溶液抑制基团的丙烯酸酯单元（a1）和（间）丙烯酸酯单元（a2），单元（a1）由与单元（a1）的丙烯酸酯和与环状基团偶联的特定结构的氟化有机基团连接的环状基团。版权所有（C）2006，JPO＆NCIPI

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