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11. 发明授权

US08363462B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08363462B2
公开(公告)日：2013-01-29
申请号：US13233906
申请日：2011-09-15
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/15
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

12. 发明申请

US20120163070A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120163070A1
公开(公告)日：2012-06-28
申请号：US13407039
申请日：2012-02-28
申请人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
发明人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.
摘要翻译：根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。第一磁性层具有第一和第二铁磁材料的叠层结构。第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。第一铁磁材料的膜厚比第二铁磁材料薄。

13. 发明授权

US08120948B2 Data writing method for magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器的数据写入方法
公开(公告)号：US08120948B2
公开(公告)日：2012-02-21
申请号：US12561495
申请日：2009-09-17
申请人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
发明人： Masahiko Nakayama , Hisanori Aikawa , Tsuneo Inaba , Kenji Tsuchida , Sumio Ikegawa , Hiroaki Yoda , Naoharu Shimomura
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675
摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
摘要翻译：一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层，第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

14. 发明授权

US08000198B2 Phase-change type optical recording medium and reproduction method and apparatus for such a recording medium 有权
标题翻译：相变型光学记录介质以及这种记录介质的再现方法和装置
公开(公告)号：US08000198B2
公开(公告)日：2011-08-16
申请号：US11658346
申请日：2006-05-19
申请人： Michiaki Shinotsuka , Masaru Shinkai , Hiroyoshi Sekiguchi , Eiko Hibino , Masaki Kato , Katsuyuki Yamada , Masahiko Nakayama
发明人： Michiaki Shinotsuka , Masaru Shinkai , Hiroyoshi Sekiguchi , Eiko Hibino , Masaki Kato , Katsuyuki Yamada , Masahiko Nakayama
IPC分类号： G11B11/00
CPC分类号： G11B7/243 , G11B7/00454 , G11B7/0052 , G11B7/24038 , G11B7/24079 , G11B7/259 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/2571 , G11B2007/25715
摘要： A dual-layer structure phase-change type optical recording medium includes a substrate (1), a reflective layer (2), a first protective layer (3), a first recording layer (4), a second protective layer (5), a resin intermediate layer (6), a third protective layer (7), a heat release layer (8) made of Cu or a Cu alloy, a fourth protective layer (9), a second recording layer (10), a fifth protective layer (11) and a cover substrate (12). A product of a reflectance of a high-reflection part and a modulation after recording is a value equal to or higher than a lower limit value for reproduction.
摘要翻译：双层结构相变型光学记录介质包括基板（1），反射层（2），第一保护层（3），第一记录层（4），第二保护层（5）由Cu或Cu合金制成的树脂中间层（6），第三保护层（7），放热层（8），第四保护层（9），第二记录层（10），第五保护层层（11）和盖基板（12）。高反射部分的反射率和记录后的调制的乘积是再生的下限值以上的值。

15. 发明授权

US07875903B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07875903B2
公开(公告)日：2011-01-25
申请号：US12037726
申请日：2008-02-26
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

16. 发明授权

US07663197B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07663197B2
公开(公告)日：2010-02-16
申请号：US11534440
申请日：2006-09-22
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0> = Mst是自由层的厚度，A是常数。

17. 发明授权

US07599156B2 Magnetoresistive element having specially shaped ferromagnetic layer 有权
标题翻译：具有特殊形状的铁磁层的磁阻元件
公开(公告)号：US07599156B2
公开(公告)日：2009-10-06
申请号：US11244153
申请日：2005-10-06
申请人： Tatsuya Kishi , Masahiko Nakayama , Yoshiaki Fukuzumi , Tadashi Kai
发明人： Tatsuya Kishi , Masahiko Nakayama , Yoshiaki Fukuzumi , Tadashi Kai
IPC分类号： G11B5/33
CPC分类号： G11C11/15
摘要： A magnetoresistive element according to an example of the present invention has a stacked structure comprised first and second ferromagnetic layers and a nonmagnetic layer disposed between these ferromagnetic layers, and a planar shape of at least one of the first and second ferromagnetic layers has a shape formed by combining two or more parts each having a shape of a character C.
摘要翻译：根据本发明的实施例的磁阻元件具有包括第一和第二铁磁层和设置在这些铁磁层之间的非磁性层的堆叠结构，并且第一和第二铁磁层中的至少一个的平面形状形成通过组合两个或更多个具有字符C形状的部分。

18. 发明授权

US07518907B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07518907B2
公开(公告)日：2009-04-14
申请号：US12019743
申请日：2008-01-25
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

19. 发明申请

US20080130176A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁电效应元件和磁记忆
公开(公告)号：US20080130176A1
公开(公告)日：2008-06-05
申请号：US12019657
申请日：2008-01-25
申请人： Tadashi KAI , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Tadashi KAI , Masahiko Nakayama , Sumio Ikegawa , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/16 , H01L27/222
摘要： A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
摘要翻译：磁阻效应元件包括具有相互面对的第一和第二表面的非磁性层。参考层设置在第一表面上并具有固定的磁化方向。磁化变化层设置在第二表面上，具有可变的磁化方向，并且具有包括矩形部分，第一突出部分和第二突出部分的平面形状。矩形部分具有相互面对的第一和第二长边以及相互面对的第一和第二短边。第一突出部从第一长边突出的位置从中心向第一短边移动。第二突出部从第二长边突出的位置从中心向第二短边移动。

20. 发明授权

US07031289B1 Control of amplitude level of baseband signal to be transmitted on the basis of the number of transmission codes 失效
标题翻译：根据传输码的数量控制要发送的基带信号的幅度电平
公开(公告)号：US07031289B1
公开(公告)日：2006-04-18
申请号：US09464520
申请日：1999-12-15
申请人： Masahiko Nakayama
发明人： Masahiko Nakayama
IPC分类号： H04B7/216
CPC分类号： H04W52/343 , H04W52/346
摘要： A baseband signal multiplexing circuit controls an amplitude level of a baseband signal to be transmitted on the basis of the number of transmission codes. A gain set value is calculated with which an amplitude value of the baseband signal outputted from a level adjustment circuit is adjusted to an amplitude value matching a dynamic range of a D/A converter based on transmission code number information transmitted from a signal processor. The level adjusting circuit is notified of the gain set value with a control signal.
摘要翻译：基带信号复用电路基于发送码的数量来控制要发送的基带信号的幅度电平。根据从信号处理器发送的发送代码数信息，计算出从电平调整电路输出的基带信号的振幅值被调整为与D / A转换器的动态范围相一致的振幅值的增益设定值。电平调整电路用控制信号通知增益设定值。

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