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11. 发明申请

US20070099031A1 Magnetic tunnel junction pressure sensors and methods 失效
标题翻译：磁隧道结压力传感器及方法
公开(公告)号：US20070099031A1
公开(公告)日：2007-05-03
申请号：US11262064
申请日：2005-10-28
申请人： Young Chung , Robert Baird , Bradley Engel
发明人： Young Chung , Robert Baird , Bradley Engel
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , G01L19/16 , Y10T428/1114 , Y10T428/1143 , Y10T428/1171
摘要： An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction (“MTJ”) core formed between the substrate and the current line. The conductive line is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core has a resistance value which varies based on the magnetic field. The resistance of the MTJ core therefore varies with respect to changes in the pressure. The MTJ core is configured to produce an electrical output signal which varies as a function of the pressure.
摘要翻译：提供一种集成电路器件，其包括衬底，被配置为经受压力的导线和形成在衬底和电流线之间的磁性隧道结（“MTJ”）芯。导线被配置为响应于压力而移动，并且承载产生磁场的电流。 MTJ芯具有根据磁场而变化的电阻值。因此，MTJ芯的电阻因压力变化而变化。 MTJ内核被配置为产生作为压力的函数而变化的电输出信号。

12. 发明申请

US20070037299A1 Low power magnetoresistive random access memory elements 有权
公开(公告)号：US20070037299A1
公开(公告)日：2007-02-15
申请号：US11581951
申请日：2006-10-16
申请人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
发明人： Nicholas Rizzo , Renu Dave , Bradley Engel , Jason Janesky , JiJun Sun
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation Hwin≈(Hsat−σsat)−(Hsw+σsw), where Hsw is a mean switching field for the array, Hsat is a mean saturation field for the array, and Hsw for each memory element is represented by the equation HSW≅√{square root over (HkHSAT)}, where Hk represents a total anisotropy and HSAT represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. Hk, HSAT, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.

13. 发明申请

US20060087880A1 Spin-transfer based MRAM using angular-dependent selectivity 有权
标题翻译：基于旋转转移的MRAM使用角度依赖选择性
公开(公告)号：US20060087880A1
公开(公告)日：2006-04-27
申请号：US10971741
申请日：2004-10-22
申请人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
发明人： Frederick Mancoff , Bradley Engel , Nicholas Rizzo
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.
摘要翻译：可以使用自旋转移反射模式技术来选择性地写入磁性随机存取存储器（“MRAM”）器件。 MRAM阵列内的指定MRAM单元的选择性通过自旋转移开关电流与偏振器元件的磁化与MRAM单元中的自由磁性元件之间的相对角度的相关性来实现。偏振器元件具有可变响应于可应用电流例如数字线电流而改变的磁化强度。当偏振器元件的磁化处于自然默认方向时，MRAM单元格中的数据将被保留。当偏振器元件的磁化被切换时，可以响应于相对低的写入电流的应用来写入MRAM单元中的数据。

14. 发明申请

US20060049441A1 Magnetoresistive random access memory with reduced switching field variation 审中-公开
标题翻译：具有减小的开关场变化的磁阻随机存取存储器
公开(公告)号：US20060049441A1
公开(公告)日：2006-03-09
申请号：US11240179
申请日：2005-09-29
申请人： Jason Janesky , Bradley Engel , Jon Slaughter
发明人： Jason Janesky , Bradley Engel , Jon Slaughter
IPC分类号： H01L29/94
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/302 , H01L43/08
摘要： An array of multi-state, multi-layer magnetic memory devices (10) wherein each memory device comprises a nonmagnetic spacer region (22) and a free magnetic region (24) positioned adjacent to a surface of the nonmagnetic spacer region, the free magnetic region including a plurality of magnetic layers (36,34,38), wherein the magnetic layer (36) in the plurality of magnetic layers positioned adjacent to the surface of the nonmagnetic spacer region has a thickness substantially greater than a thickness of each of the magnetic layers (34,38) subsequently grown thereon wherein the thickness is chosen to improve the magnetic switching variation so that the magnetic switching field for each memory device in the array of memory devices is more uniform.
摘要翻译：一种多状态多层磁存储器件阵列，其中每个存储器件包括非磁性间隔区域（22）和邻近非磁性间隔区域表面定位的自由磁区域（24），所述自由磁性区域区域，其包括多个磁性层（36,34,38），其中位于所述非磁性间隔区域的表面附近的所述多个磁性层中的所述磁性层（36）的厚度基本上大于所述非磁性间隔区域的厚度随后在其上生长的磁性层（34,38），其中选择厚度以改善磁切换变化，使得存储器件阵列中的每个存储器件的磁切换场更均匀。

15. 发明申请

US20050153063A1 Synthetic antiferromagnetic structure for magnetoelectronic devices 失效
公开(公告)号：US20050153063A1
公开(公告)日：2005-07-14
申请号：US11075587
申请日：2005-03-09
申请人： Jason Janesky , Bradley Engel , Nicholas Rizzo , Jon Slaughter
发明人： Jason Janesky , Bradley Engel , Nicholas Rizzo , Jon Slaughter
IPC分类号： G01R33/09 , G11C11/16 , H01F10/32 , H01F41/30 , B05D5/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.

16. 发明授权

US09671176B2 Heat exchanger, and method for transferring heat 有权
公开(公告)号：US09671176B2
公开(公告)日：2017-06-06
申请号：US13585934
申请日：2012-08-15
申请人： Mark Johnson , Bradley Engel
发明人： Mark Johnson , Bradley Engel
IPC分类号： F28F1/10 , F28D1/04 , F28F1/02 , F28F1/12 , F25B13/00 , F25B39/00 , F28D1/053
CPC分类号： F28F1/10 , F25B13/00 , F25B39/00 , F25B2313/02741 , F28D1/0417 , F28D1/0435 , F28D1/05341 , F28F1/022 , F28F1/126
摘要： A heat exchanger is provided to efficiently transfer heat between air and a flow of refrigerant in a reversing air-sourced heat pump system. When the system is operating in heat pump mode, a flow of air is directed through the heat exchanger and is heated by the refrigerant. A portion of the flow of air is prevented from being heated by the refrigerant in a first section of the heat exchanger, and is used to sub-cool the refrigerant in another section of the heat exchanger after the remaining air has been heated by the refrigerant. The same heat exchanger can be used to cool a flow of air using expanded refrigerant when the system is operating in an air conditioning (cooling) mode.

17. 发明申请

US20140060778A1 HEAT EXCHANGER, AND METHOD FOR TRANSFERRING HEAT 审中-公开
标题翻译：热交换器和传热方法
公开(公告)号：US20140060778A1
公开(公告)日：2014-03-06
申请号：US14076681
申请日：2013-11-11
申请人： Mark Johnson , Bradley Engel
发明人： Mark Johnson , Bradley Engel
IPC分类号： F28F1/10
CPC分类号： F28F1/10 , F25B13/00 , F25B39/00 , F25B2313/02741 , F28D1/0417 , F28D1/0435 , F28D1/05341 , F28F1/022 , F28F1/126
摘要： A heat exchanger is provided to efficiently transfer heat between air and a flow of refrigerant in a reversing air-sourced heat pump system. When the system is operating in heat pump mode, a flow of air is directed through the heat exchanger and is heated by the refrigerant. A portion of the flow of air is used to de-superheat the refrigerant in a first section of the heat exchanger, and is prevented from re-heating the sub-cooled refrigerant in another section of the heat exchanger after the remaining air has been heated by the refrigerant. The same heat exchanger can be used to cool a flow of air using expanded refrigerant when the system is operating in an air conditioning (cooling) mode.
摘要翻译：提供了一种热交换器，以有效地在空气和在可逆的空气源热泵系统中的制冷剂流之间传递热量。当系统在热泵模式下操作时，空气流通过热交换器并被制冷剂加热。空气流的一部分用于在热交换器的第一部分中对制冷剂进行去过热，并且在剩余空气被加热之后，防止在热交换器的另一部分中再次加热次冷却的制冷剂由制冷剂。当系统在空调（冷却）模式下运行时，相同的热交换器可用于使用膨胀的制冷剂来冷却空气流。

18. 发明申请

US20070025027A1 Magnetic tunnel junction sensor 失效
标题翻译：磁隧道结传感器
公开(公告)号：US20070025027A1
公开(公告)日：2007-02-01
申请号：US11192569
申请日：2005-07-29
申请人： Young Chung , Robert Baird , Bradley Engel
发明人： Young Chung , Robert Baird , Bradley Engel
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/06
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和装置。该装置包括磁隧道结（MTJ）和磁场源，其磁场与MTJ重叠，并且其与MTJ的接近度响应于对传感器的输入而变化。 MTJ包括由电介质隔开的第一和第二磁极，其被配置为允许它们之间的显着的隧穿传导。第一磁极的自旋轴被固定，第二磁极的旋转轴自由。磁场源比第一磁极更靠近第二磁极。通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

19. 发明申请

US20050263400A1 Method of applying cladding material on conductive lines of MRAM devices 失效
标题翻译：在MRAM器件的导线上施加覆层材料的方法
公开(公告)号：US20050263400A1
公开(公告)日：2005-12-01
申请号：US11139143
申请日：2005-05-26
申请人： Jaynal Molla , John D'Urso , Kelly Kyler , Bradley Engel , Gregory Grynkewich , Nicholas Rizzo
发明人： Jaynal Molla , John D'Urso , Kelly Kyler , Bradley Engel , Gregory Grynkewich , Nicholas Rizzo
IPC分类号： H01L27/105 , C25D5/12 , G11C11/15 , G11C11/16 , H01L21/00 , H01L21/4763 , H01L21/8246 , H01L27/22
CPC分类号： G11C11/16 , H01L27/222
摘要： A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.
摘要翻译：制造用于MRAM器件的包层区域的方法包括形成靠近磁阻存储器件的导电位线。将导电位线浸入包含第一导电材料的溶解离子的第一槽中足以使导电线上的第一阻挡层移位的时间。然后将第一阻挡层浸入无电镀浴中以在第一阻挡层上形成通量聚集层。将集流层浸入含有第二导电材料的溶解离子的第二槽中，持续足够的时间使得在集流层上移动第二阻挡层。

20. 发明申请

US20050047198A1 Method of writing to a multi-state magnetic random access memory cell 失效
标题翻译：写入多状态磁随机存取存储单元的方法
公开(公告)号：US20050047198A1
公开(公告)日：2005-03-03
申请号：US10647976
申请日：2003-08-25
申请人： Bradley Engel , Eric Salter , Jon Slaughter
发明人： Bradley Engel , Eric Salter , Jon Slaughter
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , G11C11/00
CPC分类号： G11C11/16 , G11C11/5607
摘要： A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device (12) having two bits (18) and (20) sandwiched between a word line (14) and a digit line (16) so that current waveforms (104) and (106) can be applied to the word and digit lines at various times to cause a magnetic field flux HW and HD to rotate the effective magnetic moment vectors (86) and (94) of the device (12) by approximately 180°. Each bit includes N ferromagnetic layers (32) and (34, 42) and (44, 60) and (62, 72 and 74) that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the bit. One or both bits may be programmed by adjusting the current in the word and/or digit lines.
摘要翻译：一种用于切换可扩展磁阻存储单元的方法，包括以下步骤：提供具有夹在字线（14）和数字线（16）之间的两个位（18）和（20）的磁阻存储器件（12），使得电流波形（104）和（106）可以在不同时间施加到字和数字线，以使磁场通量HW和HD将装置（12）的有效磁矩矢量（86）和（94）旋转大约 180°。每个位包括反铁磁耦合的N个铁磁层（32）和（34,42）和（44,60）和（62,72和74）。可以调节N以改变位的磁开关量。可以通过调整字和/或数字线中的电流来编程一个或两个位。

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