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    • 11. 发明申请
    • MANUFACTURING METHOD OF VEHICLE MOLDED CEILING
    • 车辆模制天花板的制造方法
    • US20090145538A1
    • 2009-06-11
    • US11989413
    • 2006-07-25
    • Takashi KojimaYoshiaki KatoKazutoshi SomiyaRyoichi Kawabata
    • Takashi KojimaYoshiaki KatoKazutoshi SomiyaRyoichi Kawabata
    • B32B37/00
    • B29C51/145B29C51/02B29C51/082B29C63/0013B29C2793/009B29L2031/3011B32B1/00B32B3/04B32B5/022B32B5/245B32B5/26B32B7/06B32B7/12B32B2266/0278B32B2307/10B32B2307/748B32B2605/00B60R13/0225
    • A process for producing a molded ceiling for a vehicle that, after molding of a molded ceiling, can allow a mill end to be easily separated from a skin material by a nonwoven fabric layer and can easily conduct edge treatment of a base material to improve productivity. In this process for producing a molded ceiling for a vehicle, a base material together with a skin material is set in a mold in which a molding face is formed in a required curved surface, followed by heating and pressing to bond the base material and the skin material to each other and thus to prepare a molded ceiling. A nonwoven fabric layer for facilitating the separation between the base material and the skin material even after molding is previously interposed between the base material and the skin material. A cut, which extends from the backside of the molded ceiling to the base material, is provided, and only the mill end of the base material is separated from the skin material by the nonwoven fabric layer, and an adhesive is coated onto a part from which the mill end of the skin material has been removed. The skin material is wound in and bonded to the edge of the base material to cover the edge with the skin material.
    • 一种用于制造车辆模制天花板的方法,在模制天花板成型之后,可以使磨机端部通过非织造织物层容易地从表皮材料分离,并且可以容易地进行基材的边缘处理以提高生产率 。 在制造车辆模塑天花板的方法中,将基材与表皮材料一起设置在其中在所需曲面上形成模制面的模具中,随后加热和压制以将基材和 皮肤材料彼此,从而制备模制天花板。 即使在模制之后,也可以预先在基材和表皮材料之间插入用于促进基材与表皮材料分离的非织造布层。 提供了从模制天花板的背面延伸到基材的切口,并且只有基材的研磨端通过无纺布层与表皮材料分离,并且将粘合剂涂覆到从 其中已经除去了皮肤材料的研磨端。 将皮肤材料缠绕并粘合到基材的边缘以用皮肤材料覆盖边缘。
    • 14. 发明授权
    • Semiconductor device and manufacturing method of the same
    • 半导体器件及其制造方法相同
    • US07495268B2
    • 2009-02-24
    • US11757533
    • 2007-06-04
    • Yoshiaki KatoYoshiharu AndaAkiyoshi Tamura
    • Yoshiaki KatoYoshiharu AndaAkiyoshi Tamura
    • H01L29/812
    • H01L29/8128H01L29/42316H01L29/66863H01L29/778
    • A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
    • 根据本发明的半导体器件包括:半导体衬底; 形成在所述半导体衬底上的沟道层; 在沟道层上形成的施主层; 形成在供体层上的第一肖特基层; 形成在第一肖特基层上的第二肖特基层; 形成在所述第一肖特基层上以与所述第一肖特基层形成肖特基势垒结的第一栅电极; 第一源电极和第一漏电极,其形成为夹着所述第一栅电极并电连接到所述沟道层; 第二栅电极,形成在所述第二肖特基层上,并且由与所述第一栅电极不同的材料制成,以与所述第二肖特基层形成肖特基势垒结; 以及第二源电极和第二漏电极,其形成为夹着所述第二栅极并电连接到所述沟道层。