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    • 11. 发明授权
    • Surface emitting laser
    • 表面发射激光
    • US07817696B2
    • 2010-10-19
    • US12294032
    • 2007-03-23
    • Hiroshi Hatakeyama
    • Hiroshi Hatakeyama
    • H01S5/00
    • H01S5/1835H01S5/0267H01S5/0425H01S5/06226H01S5/18308H01S5/18311H01S5/18333H01S5/18338H01S5/2059H01S5/423H01S2301/166H01S2301/176
    • VCSELs with a conventional oxide-confined structure have problems to be solved for the purpose of reducing the internal stress and thermal resistance of the device. In particular, the problems should be solved in order to achieve the high reliability of the high-speed modulation-type VCSELs. A surface emitting laser according to an embodiment of the present invention comprising a single current injection opening area, which is provided in a mesa and electrically and optically isolated, wherein the laser comprises: an active layer for emitting light resulted from current injection; a first reflector and a second reflector provided so as to sandwich the active layer between the reflectors, an n electrode and a p electrode for injecting current into the active layer, an ion-implanted nonconductive high-resistance area provided so as to surround the current injection opening area, and a half cross section in which the nonconductive oxidized layer does not appear is present among radial half cross sections extending from a substantial center of the current injection opening area to an outer periphery of the surface emitting laser, which cross sections are interrupted within a region where a laser emitting light is present.
    • 具有常规氧化物限制结构的VCSEL具有要解决的问题,以减少器件的内部应力和热阻。 特别地,为了实现高速调制型VCSEL的高可靠性,应该解决问题。 根据本发明实施例的表面发射激光器包括单电流注入开口区域,其设置在台面中并且电和光学隔离,其中激光器包括:用于发射由电流注入产生的光的有源层; 第一反射器和第二反射器,被设置为将有源层夹在反射器之间,用于将电流注入到有源层中的n电极和ap电极,设置成围绕电流注入的离子注入非导电高电阻区域 开口面积和半导体氧化层不存在的半截面存在于从电流注入开口区域的大致中心延伸到表面发射激光器的外周的径向半截面中,该截面被中断 在存在激光发射光的区域内。
    • 12. 发明申请
    • SURFACE-EMISSION TYPE SEMICONDUCTOR LASER
    • 表面发射型半导体激光器
    • US20100034233A1
    • 2010-02-11
    • US12531326
    • 2008-03-14
    • Naofumi SuzukiMasayoshi TsujiTakayoshi AnanKenichiro YashikiHiroshi HatakeyamaKimiyoshi FukatsuTakeshi Akagawa
    • Naofumi SuzukiMasayoshi TsujiTakayoshi AnanKenichiro YashikiHiroshi HatakeyamaKimiyoshi FukatsuTakeshi Akagawa
    • H01S5/00
    • H01S5/06226H01S5/1039H01S5/18308H01S5/18369H01S5/227H01S5/3095
    • The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1),  (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4.  (2)
    • 本发明提供了一种表面发射型半导体激光器,其中空腔的有效长度减小,从而能够实现更高速度的直接调制。 在根据本发明的表面发射型半导体激光器中,当假设谐振器部分相对于激发波长λ0的光程长度(L)被给定为0.9×λλ<= L <= 1.1×λ10,并且表示 通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中的光程长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择,以满足以下条件(1)和(2):nH1> f (nS1)nL12 + g(nS1)nL1 + h(nS1),(1)其中f(nS1)= 0.0266 nS12-0.2407 nS1 + 0.6347; g(nS1)= - 0.0508 nS12 + 0.4335 nS1-0.0085; h(nS1)= 0.0382 nS12-0.3194 nS1 + 0.7398,nH2-nL2> 0.4。 (2)
    • 14. 发明申请
    • FLOW SENSOR AND MANUFACTURING METHOD THEREFOR
    • 流量传感器及其制造方法
    • US20090078040A1
    • 2009-03-26
    • US12191907
    • 2008-08-14
    • Shinichi IkeHiroshi HatakeyamaSatoshi Tsuchiya
    • Shinichi IkeHiroshi HatakeyamaSatoshi Tsuchiya
    • G01F1/68H01C17/06
    • G01F1/6845G01F1/692Y10T29/49099
    • A flow sensor may be formed by bonding a sensor chip formed with a flow rate detecting part and a flow path-forming member that is provided on the sensor chip and is formed with a flow path for a fluid flowing in the flow rate detecting part to each other on the upper surface of a substrate. The flow path-forming member may be formed by bonding a transparent first flow path forming member and a second flow path-forming member to each other. The first flow path forming member has a plate shape, and is provided with an inflow port and a outflow port for the fluid to be measured, and the second flow path forming member has a plate shape, and is provided with a through hole that forms the flow path along the flow of the fluid flowing along the flow rate detecting part.
    • 可以通过将形成有流量检测部的传感器芯片和设置在传感器芯片上的流路形成部件接合而形成流量传感器,并且形成有用于在流量检测部件中流动的流体的流路 彼此在基板的上表面上。 流路形成构件可以通过将透明第一流路形成构件和第二流路形成构件相互结合而形成。 第一流路形成构件具有板状,并且设置有用于待测量流体的流入口和流出口,并且第二流路形成构件具有板形,并且设置有形成为 沿着沿着流量检测部流动的流体的流动的流路。
    • 18. 发明授权
    • Flow sensor and manufacturing method therefor
    • 流量传感器及其制造方法
    • US08166814B2
    • 2012-05-01
    • US12191907
    • 2008-08-14
    • Shinichi IkeHiroshi HatakeyamaSatoshi Tsuchiya
    • Shinichi IkeHiroshi HatakeyamaSatoshi Tsuchiya
    • G01F1/68H01C17/06
    • G01F1/6845G01F1/692Y10T29/49099
    • A flow sensor may be formed by bonding a sensor chip formed with a flow rate detecting part and a flow path-forming member that is provided on the sensor chip and is formed with a flow path for a fluid flowing in the flow rate detecting part to each other on the upper surface of a substrate. The flow path-forming member may be formed by bonding a transparent first flow path forming member and a second flow path-forming member to each other. The first flow path forming member has a plate shape, and is provided with an inflow port and a outflow port for the fluid to be measured, and the second flow path forming member has a plate shape, and is provided with a through hole that forms the flow path along the flow of the fluid flowing along the flow rate detecting part.
    • 可以通过将形成有流量检测部的传感器芯片和设置在传感器芯片上的流路形成部件接合而形成流量传感器,并且形成有用于在流量检测部件中流动的流体的流路 彼此在基板的上表面上。 流路形成构件可以通过将透明第一流路形成构件和第二流路形成构件相互结合而形成。 第一流路形成构件具有板状,并且设置有用于待测量流体的流入口和流出口,并且第二流路形成构件具有板形,并且设置有形成为 沿着沿着流量检测部流动的流体的流动的流路。