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11. 发明授权

US08676132B2 Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same 有权
标题翻译：半导体集成电路，使用其的RF模块，以及使用其的无线通信终端装置
公开(公告)号：US08676132B2
公开(公告)日：2014-03-18
申请号：US13677601
申请日：2012-11-15
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

12. 发明申请

US20120200335A1 SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME 有权
标题翻译：半导体集成电路，使用该半导体集成电路的RF模块和使用该半导体集成电路的无线电通信终端装置
公开(公告)号：US20120200335A1
公开(公告)日：2012-08-09
申请号：US13448033
申请日：2012-04-16
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H03K17/687 , H03K17/74
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

13. 发明授权

US08200167B2 Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same 失效
标题翻译：半导体集成电路，使用其的RF模块，以及使用其的无线通信终端装置
公开(公告)号：US08200167B2
公开(公告)日：2012-06-12
申请号：US12513280
申请日：2007-11-08
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

14. 发明申请

US20100069020A1 SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME 失效
标题翻译：半导体集成电路，使用该半导体集成电路的RF模块和使用该半导体集成电路的无线电通信终端装置
公开(公告)号：US20100069020A1
公开(公告)日：2010-03-18
申请号：US12513280
申请日：2007-11-08
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44 , H03K17/687 , H01P1/10 , H03L5/00
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

15. 发明授权

US08335479B2 Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same 有权
公开(公告)号：US08335479B2
公开(公告)日：2012-12-18
申请号：US13448033
申请日：2012-04-16
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.

16. 发明申请

US20100117713A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME 有权
标题翻译：半导体集成电路及其高频模块
公开(公告)号：US20100117713A1
公开(公告)日：2010-05-13
申请号：US12615525
申请日：2009-11-10
申请人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
发明人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K17/063
摘要： The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.
摘要翻译：本发明旨在减少在将RF Tx信号提供给天线开关的偏置产生电路时的RF（发送）Tx输出信号的谐波信号的电平的增加。半导体集成电路包括具有偏置产生电路，Tx开关和具有偏置产生电路，发射器开关和接收器（Rx））开关的天线开关的天线开关。耦合在Tx端口和I / O端口之间的Tx开关的晶体管的导通/截止状态由Tx控制偏置来控制。耦合在I / O端口和接收器（Rx）端口之间的Rx开关的晶体管的开/关状态由RX控制偏置来控制。偏置产生电路的射频（RF）信号输入端口耦合到Tx端口，并且可以将从DC输出端口产生的负DC输出偏压提供给Rx开关的晶体管的栅极控制端口。

17. 发明申请

US20060061434A1 Antenna switch circuit and high frequency module having the same 有权
标题翻译：天线开关电路和具有相同功能的高频模块
公开(公告)号：US20060061434A1
公开(公告)日：2006-03-23
申请号：US11178312
申请日：2005-07-12
申请人： Takashi Ogawa , Shinichiro Takatani , Akishige Nakajima , Yasushi Shigeno , Eigo Tange
发明人： Takashi Ogawa , Shinichiro Takatani , Akishige Nakajima , Yasushi Shigeno , Eigo Tange
IPC分类号： H01P1/15
CPC分类号： H04B1/525
摘要： An object of the present invention is to provide an antenna switch circuit that effectively reduces signal leakages at a cross point even at higher operating frequencies and a high frequency module containing said antenna switch module. The antenna switch circuit comprises: a high frequency signal line to transmit a transmitting signal to be input to transmitting terminals to an antenna terminal and also to transmit a receiving signal to be input to the antenna terminal to receiving terminals; switches that are connected in the middle of the high frequency signal line between transmitting terminal and antenna terminal; switches that are connected in the middle of the high frequency signal line between receiving terminal and antenna terminal; and signal lines to transmit control signals for controlling turning on and off of the switches.
摘要翻译：本发明的一个目的是提供一种天线切换电路，即使在较高的工作频率下也能有效地减少交叉点处的信号泄漏，并且包含天线开关模块的高频模块。天线开关电路包括：高频信号线，用于向天线端子发送要输入到发送端的发送信号，并且向接收终端发送要输入到天线端子的接收信号; 在发射端和天线端之间的高频信号线中间连接的开关; 在接收终端和天线终端之间的高频信号线中间连接的交换机; 和信号线发送用于控制开关的接通和断开的控制信号。

18. 发明授权

US07425876B2 Antenna switch circuit and high frequency module having the same 有权
标题翻译：天线开关电路和具有相同功能的高频模块
公开(公告)号：US07425876B2
公开(公告)日：2008-09-16
申请号：US11178312
申请日：2005-07-12
申请人： Takashi Ogawa , Shinichiro Takatani , Akishige Nakajima , Yasushi Shigeno , Eigo Tange
发明人： Takashi Ogawa , Shinichiro Takatani , Akishige Nakajima , Yasushi Shigeno , Eigo Tange
IPC分类号： H01P1/10 , H01P1/15
CPC分类号： H04B1/525
摘要： An object of the present invention is to provide an antenna switch circuit that effectively reduces signal leakages at a cross point even at higher operating frequencies and a high frequency module containing said antenna switch module. The antenna switch circuit comprises: a high frequency signal line to transmit a transmitting signal to be input to transmitting terminals to an antenna terminal and also to transmit a receiving signal to be input to the antenna terminal to receiving terminals; switches that are connected in the middle of the high frequency signal line between transmitting terminal and antenna terminal; switches that are connected in the middle of the high frequency signal line between receiving terminal and antenna terminal; and signal lines to transmit control signals for controlling turning on and off of the switches.
摘要翻译：本发明的一个目的是提供一种天线切换电路，即使在较高的工作频率下也能有效地减少交叉点处的信号泄漏，并且包含天线开关模块的高频模块。天线开关电路包括：高频信号线，用于向天线端子发送要输入到发送端的发送信号，并且向接收终端发送要输入到天线端子的接收信号; 在发射端和天线端之间的高频信号线中间连接的开关; 在接收终端和天线终端之间的高频信号线中间连接的交换机; 和信号线发送用于控制开关的接通和断开的控制信号。

19. 发明授权

US07269392B2 Electric component for communication device and semiconductor device for switching transmission and reception 有权
标题翻译：用于通信设备的电气部件和用于切换发送和接收的半导体器件
公开(公告)号：US07269392B2
公开(公告)日：2007-09-11
申请号：US10921211
申请日：2004-08-19
申请人： Akishige Nakajima , Takashi Ogawa , Hidenori Suenaga , Eigo Tange , Shinya Osakabe , Yasushi Shigeno
发明人： Akishige Nakajima , Takashi Ogawa , Hidenori Suenaga , Eigo Tange , Shinya Osakabe , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H03F3/195 , H03F1/0277 , H03F1/32 , H03F3/72 , H03F2200/111 , H03F2200/372 , H03F2200/429
摘要： There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.
摘要翻译：提供了一种插入损耗和谐波失真小的发送/接收切换电路，并且允许功率放大器和安装发送/接收切换电路的通信用电子部件的输出功率的增加。作为构成无线通信系统中的发送/接收切换电路的元件，使用串联连接的FET或多栅极FET来代替二极管。连接在各个栅极端子和控制端子之间的栅极电阻被设计成具有从施加最低电压的栅极施加最高电压的栅极逐渐变小的电阻值。

20. 发明申请

US20080317154A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE 审中-公开
标题翻译：半导体集成电路设备和无线电频率模块
公开(公告)号：US20080317154A1
公开(公告)日：2008-12-25
申请号：US11765236
申请日：2007-06-19
申请人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinnichirou Takatani , Shinya Osakabe , Tomoyuki Ishikawa
发明人： Akishige Nakajima , Yasushi Shigeno , Takashi Ogawa , Shinnichirou Takatani , Shinya Osakabe , Tomoyuki Ishikawa
IPC分类号： H04B1/38
CPC分类号： H04B1/006 , H01L27/0641 , H03K17/005 , H03K17/007 , H03K17/063 , H03K17/161 , H03K17/302 , H03K17/6871 , H03K17/693 , H03K17/72 , H03K2017/066 , H03K2217/0018
摘要： The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.
摘要翻译：本发明提供一种半导体集成电路器件和实现高阶谐波失真或IMD降低的射频模块。例如，在天线端子和多个信号端子之间具有多个晶体管的所谓的天线开关设置有电压供给电路。电压供给电路是用于经由电阻元件将电压从电压端子提供给多个信号端子中的至少两个信号端子的电路。通过该结构，可以提高由于漏电等而导致的天线电压下降，例如，可以将关断状态的晶体管设定为深断状态。

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