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11. 发明授权

US08574330B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device 有权
标题翻译：化学机械抛光水性分散体和半导体器件的化学机械抛光方法
公开(公告)号：US08574330B2
公开(公告)日：2013-11-05
申请号：US12297949
申请日：2007-09-27
申请人： Yuuji Namie , Tomohisa Konno , Masayuki Motonari , Hirotaka Shida , Akihiro Takemura
发明人： Yuuji Namie , Tomohisa Konno , Masayuki Motonari , Hirotaka Shida , Akihiro Takemura
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.
摘要翻译：本发明的化学机械研磨用水系分散体包含（A）重均分子量为500,000〜2000000的第一水溶性聚合物，其分子中含有杂环，（B）第二水溶性聚合物或其盐重均分子量为1000〜10000，包括选自羧基和磺酸基的一个基团，（C）氧化剂和（D）磨粒，pH为7〜12。

12. 发明申请

US20110081780A1 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
标题翻译：化学机械抛光和化学机械抛光方法的水分散
公开(公告)号：US20110081780A1
公开(公告)日：2011-04-07
申请号：US12918013
申请日：2009-02-13
申请人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Michiaki Andou , Kazuhito Uchikura , Akihiro Takemura
发明人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Michiaki Andou , Kazuhito Uchikura , Akihiro Takemura
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021/g.
摘要翻译：化学机械研磨用水系分散体包含（A）二氧化硅粒子和（B1）有机酸，由二氧化硅粒子（A）中包含的硅烷醇基的数量由29Si-NMR谱的信号面积计算为2.0〜3.0× 1021 / g。

13. 发明申请

US20090302266A1 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光水化学分散体，化学机械抛光方法，以及化学机械抛光水溶液的制备工具
公开(公告)号：US20090302266A1
公开(公告)日：2009-12-10
申请号：US12295872
申请日：2007-03-27
申请人： Akihiro Takemura , Hirotaka Shida , Masatoshi Ikeda
发明人： Akihiro Takemura , Hirotaka Shida , Masatoshi Ikeda
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/7684
摘要： A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) an organic acid, (C) a water-soluble polymer, (D) an oxidizing agent, and (E) water, the water-soluble polymer (C) having a weight average molecular weight of 50,000 to 5,000,000.
摘要翻译：化学机械研磨水分散体包含（A）磨粒，（B）有机酸，（C）水溶性聚合物，（D）氧化剂和（E）水，水溶性聚合物（C）重均分子量为50,000〜5,000,000。

14. 发明申请

US20090181540A1 CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
标题翻译：化学机械抛光方法
公开(公告)号：US20090181540A1
公开(公告)日：2009-07-16
申请号：US12405327
申请日：2009-03-17
申请人： Hirotaka Shida , Masayuki Hattori
发明人： Hirotaka Shida , Masayuki Hattori
IPC分类号： H01L21/304
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要翻译：一种化学机械抛光方法，包括：通过连续进行第一抛光步骤和抛光速率低于第一抛光步骤的抛光速率的抛光速率的化学机械抛光水分散体，使用化学机械抛光水分散体，化学和机械抛光抛光目标表面在第一抛光步骤和第二抛光步骤是水分散体和水溶液的混合物，并且抛光速率在第一抛光步骤和第二抛光步骤之间通过改变水分散体和水性分散体的混合比而改变解。

15. 发明授权

US07560384B2 Chemical mechanical polishing method 有权
标题翻译：化学机械抛光方法
公开(公告)号：US07560384B2
公开(公告)日：2009-07-14
申请号：US11358224
申请日：2006-02-22
申请人： Hirotaka Shida , Masayuki Hattori
发明人： Hirotaka Shida , Masayuki Hattori
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要翻译：一种化学机械抛光方法，包括：通过连续进行第一抛光步骤和抛光速率低于第一抛光步骤的抛光速率的抛光速率的化学机械抛光水分散体，使用化学机械抛光水分散体，化学和机械抛光抛光目标表面在第一抛光步骤和第二抛光步骤是水分散体和水溶液的混合物，并且抛光速率在第一抛光步骤和第二抛光步骤之间通过改变水分散体和水性分散体的混合比而改变解。

16. 发明申请

US20080045016A1 CLEANING COMPOSITION, CLEANING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁组合物，清洁方法和半导体器件的制造方法
公开(公告)号：US20080045016A1
公开(公告)日：2008-02-21
申请号：US11833534
申请日：2007-08-03
申请人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/461 , C11D3/37
CPC分类号： C11D11/0047 , C11D3/37 , C11D17/06 , H01L21/02074
摘要： A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method.The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).
摘要翻译：清洁组合物可以对具有金属布线和低介电常数膜的化学机械抛光的半导体衬底的表面进行去污染，并且可以高度去除金属布线上的残留磨粒，残留抛光废料和金属离子等杂质和低介电常数膜不会腐蚀金属布线，降低低介电常数膜的电特性，并对低介电常数膜造成机械损伤。半导体衬底的清洁方法使用清洁组合物，并且半导体衬底的制造方法包括执行清洁方法的步骤。清洁组合物用于化学机械抛光的表面，并且包括具有交联结构和平均分散粒径为10nm以上且小于100nm的有机聚合物粒子（A）和络合剂（B）。

17. 发明申请

US20120322348A1 PAD FOR CHEMICAL MECHANICAL POLISHING AND METHOD OF CHEMICAL MECHANICAL POLISHING USING SAME 审中-公开
标题翻译：化学机械抛光垫及其化学机械抛光方法
公开(公告)号：US20120322348A1
公开(公告)日：2012-12-20
申请号：US13518230
申请日：2010-12-14
申请人： Katsutaka Yokoi , Ayako Maekawa , Hirotaka Shida , Satoshi Kamo , Shinji Tonsho , Keiichi Satou , Naoki Nishiguchi , Hiroyuki Tano
发明人： Katsutaka Yokoi , Ayako Maekawa , Hirotaka Shida , Satoshi Kamo , Shinji Tonsho , Keiichi Satou , Naoki Nishiguchi , Hiroyuki Tano
IPC分类号： B24B37/24 , B24B1/00
CPC分类号： B24B37/24 , B24B37/042 , C08G18/4804 , C08G18/4833 , C08G18/4854 , C08G18/7664 , C08L71/00 , C08L75/04 , C08L2205/025 , C08L2205/03
摘要： A chemical mechanical polishing pad includes a polishing layer formed using a composition that includes a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15 to 1.30, and a durometer D hardness of 50 to 80.
摘要翻译：化学机械抛光垫包括使用包含热塑性聚氨酯的组合物形成的抛光层，所述抛光层的比重为1.15至1.30，硬度D硬度为50至80。

18. 发明授权

US07378349B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US07378349B2
公开(公告)日：2008-05-27
申请号：US11102639
申请日：2005-04-11
申请人： Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
发明人： Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
IPC分类号： H01L21/461
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要翻译：公开了一种化学机械抛光水分散体，其包含（A1）比表面积不小于10m 2 / g且小于160m 2 / g的第一热解法二氧化硅， g，平均二次粒径为170nm以上250nm以下，（A2）比表面积为160m 2 / g以上的第二热解法二氧化硅，平均二次粒径不小于50nm且小于170nm。还公开了使用化学机械研磨水分散体的化学机械研磨方法。根据化学机械抛光水分散体和化学机械抛光方法，化学机械抛光方法可以通过抛光和损坏存在于介质中的低介电常数的绝缘薄膜材料来有效地去除阻挡金属层和盖层底层减少可以进行。

19. 发明授权

US08470195B2 Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体制备装置，化学机械抛光水性分散体的化学机械抛光水分散体和化学机械抛光方法
公开(公告)号：US08470195B2
公开(公告)日：2013-06-25
申请号：US12127334
申请日：2008-05-27
申请人： Eiichirou Kunitani , Hirotaka Shida , Kazuhito Uchikura
发明人： Eiichirou Kunitani , Hirotaka Shida , Kazuhito Uchikura
IPC分类号： H01L21/304 , C09K13/00 , C09K13/02
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1409 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0.
摘要翻译：一种化学机械抛光水性分散体制剂组，包括：第一组合物，其包含平均一次粒径为15〜40nm的胶体二氧化硅和碱性化合物，pH为8.0〜11.0; 以及第二组合物，其包含聚（甲基）丙烯酸和除聚（甲基）丙烯酸以外具有两个或更多个羰基并且具有1.0至5.0的pH的有机酸。

20. 发明授权

US08257504B2 Surface treatment composition, surface treatment method, and method for manufacturing semiconductor device 有权
标题翻译：表面处理组合物，表面处理方法以及半导体装置的制造方法
公开(公告)号：US08257504B2
公开(公告)日：2012-09-04
申请号：US12794028
申请日：2010-06-04
申请人： Yasumasa Mori , Hirotaka Shida , Kazuo Kawaguchi , Hiroyuki Yano , Mie Matsuo
发明人： Yasumasa Mori , Hirotaka Shida , Kazuo Kawaguchi , Hiroyuki Yano , Mie Matsuo
IPC分类号： C25F3/30
CPC分类号： C09K3/1472 , H01L21/02074 , H01L21/321
摘要： A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11.According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.
摘要翻译：本发明的表面处理组合物是用于处理包含由特定结构式表示的化合物（A）和沸点为一个大气压的溶剂（B）的半导体衬底的包含金属线的表面的组合物为50〜300℃，pH为4〜11。根据本发明的表面处理用组合物，能够抑制半导体基板的金属配线的氧化，使金属配线部的平坦度下降可以抑制异常氧化。而且，在半导体基板的含有金属配线的表面上存在绝缘膜或阻挡金属膜的情况下，金属配线与绝缘膜或阻挡金属膜之间的界面处的金属配线的表面粗糙度可以抑制。

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