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11. 发明授权

US5591267A Reduced pressure device 失效
标题翻译：减压装置
公开(公告)号：US5591267A
公开(公告)日：1997-01-07
申请号：US458894
申请日：1995-06-02
申请人： Tadahiro Ohmi , Masaru Umeda
发明人： Tadahiro Ohmi , Masaru Umeda
IPC分类号： C23C8/14 , C23C14/35 , C23C14/56 , C23C16/44 , F16K31/02 , F16K51/02 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32174 , C23C14/35 , C23C14/564 , C23C16/4402 , C23C16/4404 , C23C8/14 , F16K31/02 , F16K51/02 , H01J37/32082 , H01J2237/186
摘要： A reduced pressure device the reduced pressure chamber of which is constructed of stainless steel, and includes a passivation film formed on the exposed interior surface thereof. The film has a thickness of more than 50 .ANG. and is composed of two or more layers. One layer contains mainly chrome oxide formed in the vicinity of the interface of the stainless steel and the passivation film. The other layer contains mainly iron oxide formed in the vicinity of the surface of the passivation film. A passivation film may also be used with a thickness of more than 50 .ANG. and containing mainly a mixture of chrome oxide and iron oxide. Lastly a passivation film may also be used with thickness of more than 50 .ANG. and containing mainly chrome oxide.
摘要翻译：一种减压装置，其减压室由不锈钢构成，并包括在其暴露的内表面上形成的钝化膜。该膜的厚度大于50，由两层或多层组成。一层主要含有形成在不锈钢和钝化膜界面附近的氧化铬。另一层主要在钝化膜的表面附近形成氧化铁。还可以使用钝化膜，其厚度大于50埃，并主要含有氧化铬和氧化铁的混合物。最后，钝化膜也可以使用，其厚度大于50，主要含有氧化铬。

12. 发明授权

US5518360A Wafer carrying device and wafer carrying method 失效
标题翻译：晶圆承载装置和晶圆承载方式
公开(公告)号：US5518360A
公开(公告)日：1996-05-21
申请号：US50462
申请日：1993-05-17
申请人： Masayuki Toda , Takashi Onoda , Tadahiro Ohmi , Masaru Umeda , Yoichi Kanno
发明人： Masayuki Toda , Takashi Onoda , Tadahiro Ohmi , Masaru Umeda , Yoichi Kanno
IPC分类号： B65G51/03 , H01L21/677 , F16C32/06
CPC分类号： H01L21/67787 , B65G51/03 , H01L21/67784 , Y10S414/135 , Y10S414/136
摘要： A device for carrying a thin plate-like substrate such as a semiconductor wafer and controlling its position by floating it with an inert gas of low impurity concentration. A transferring unit and a controlling unit are respectively provided with gas nozzles for floating a thin plate-like substrate and with a gas exhausting and circulating system, and a plurality of them are in combination with each other in a sealing state. The controlling unit, further, has a vacuum suction hole at its controlling center, and is provided with nozzles for controlling the thin plate-like substrate in its radial and circumferential direction respectively and with nozzles for stopping the thin plate-like substrate or sending out it to the next unit too. On the bottom of a control space, grooves extending from the vacuum suction hole are formed for improving the positional accuracy of stopping the thin palate-like substrate, and they are closed on the insides of their circumferential part when the center of the thin plate-like substrate has coincided with the controlling center of the controlling unit.
摘要翻译： PCT No.PCT / JP91 / 01469 Sec。 371日期：1993年5月17日 102（e）日期1993年5月17日PCT 1991年10月28日PCT公布。第WO92 / 09103号公报日期：1992年5月29日。一种用于承载诸如半导体晶片的薄板状基板的装置，并且通过用低杂质浓度的惰性气体漂浮来控制其位置。传送单元和控制单元分别设置有用于浮动薄板状基板和排气循环系统的气体喷嘴，并且其中多个在密封状态下彼此组合。此外，控制单元在其控制中心具有真空吸引孔，并且分别设置有用于在其径向和周向上控制薄板状基板的喷嘴和用于停止薄板状基板的喷嘴或发出它也到下一个单位。在控制空间的底部形成有从真空抽吸孔延伸出的槽，用于提高停止薄腭状基板的位置精度，并且当薄板状基板的中心位于其周向部分的内侧时，像基板与控制单元的控制中心一致。

13. 发明授权

US5160429A Piping system for supplying ultra-pure water 失效
标题翻译：用于供应超纯水的管道系统
公开(公告)号：US5160429A
公开(公告)日：1992-11-03
申请号：US635590
申请日：1990-12-31
申请人： Tadahiro Ohmi , Michiya Kawakami , Tadashi Shibata , Masaru Umeda
发明人： Tadahiro Ohmi , Michiya Kawakami , Tadashi Shibata , Masaru Umeda
IPC分类号： B01D61/22 , C02F1/00 , C02F1/32 , C02F1/44 , H01L21/304
CPC分类号： B01D61/22 , C02F1/006 , C02F1/32 , C02F1/444 , Y10S210/90
摘要： The present invention offers a piping system for supplying ultra-pure water, which comprises a circulation tank to store primary pure water from a primary pure water producing unit, a pump for sending the primary pure water from said circulation tank, an outward pipe, one end of which is connected to a final purifying unit to purify primary pure water from said pump to ultra-pure water, a plurality of connection pipes, each end of which is connected to the other end of said outward pipe, a branching pipe connected between the middle of said connection pipe and the ultra-pure water using unit and having a branching valve to adjust the water quantity, and a return pipe connected between the other end of said connection pipe and said circulation tank, characterized in that means for controlling the output of said pump is provided to keep the water pressure at constant level by detecting the water pressure in said outward pipe, thereby supplying a constant quantity of ultra-pure water to the ultra-pure water using unit at all times, and that ultra-pure water of ultra-high purity can be stably supplied by preventing counterflow from the return pipe to the ultra-pure water using unit.
摘要翻译： PCT No.PCT / JP90 / 00648 Sec。 371 1990年12月31日第 102（e）1990年12月31日PCT PCT 1989年6月29日PCT公布。出版物WO90 / 00155 日本1990年1月11日。本发明提供了一种用于提供超纯水的管道系统，其包括循环罐，用于储存来自初级纯水生产单元的初级纯水，用于将来自所述循环的初级纯水罐，一个向外的管，其一端连接到最终净化单元，以将来自所述泵的初级纯水纯化成超纯水;多个连接管，其每个端部连接到所述外部的另一端管，连接在所述连接管的中间和超纯水使用单元之间并具有分流阀以调节水量的分支管;以及连接在所述连接管的另一端和所述循环罐之间的回流管，其特征在于，提供用于控制所述泵的输出的装置，用于通过检测所述外管中的水压来将水压保持在恒定水平，从而提供恒定量的ul 将超纯水用于超纯水使用单位，通过防止从返回管逆流到超纯水使用单元，可以稳定地提供超纯净的超纯水。

14. 发明授权

US4917136A Process gas supply piping system 失效
标题翻译：工艺供气管道系统
公开(公告)号：US4917136A
公开(公告)日：1990-04-17
申请号：US198079
申请日：1988-05-24
申请人： Tadahiro Ohmi , Kazuhiko Sugiyawa , Fumio Nakahara , Masaru Umeda
发明人： Tadahiro Ohmi , Kazuhiko Sugiyawa , Fumio Nakahara , Masaru Umeda
IPC分类号： F17D1/04 , B01J4/00 , B08B9/02 , B08B9/032 , C23C16/455 , F17D1/02 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： B08B9/0325 , B08B9/0328 , C23C16/455 , C23C16/45561 , H01J37/3244 , Y10S134/902 , Y10T137/0419 , Y10T137/4259
摘要： This invention relates to the supply piping system of the process gas for various types of thin-film making and fine pattern dry etching process, and more particularly to the process gas supply system, which makes it possible to form high quality thin films and to perform high quality etching.Specifically, when there are a unit in operation with process gas supplied and a unit not in operation with no process gas supplied in a process gas supply piping system, supplying the process gas to two or more process units from a cylinder cabinet piping system, this invention provides a gas supply piping system, where the process gas supply piping line to the process unit not in operation can be purged with purge gas all the time and where gas flows all the time through all of gas supply piping lines to eliminate the stagnation of gas.
摘要翻译：本发明涉及用于各种薄膜制造和精细图案干蚀刻工艺的工艺气体的供应管道系统，更具体地涉及工艺气体供应系统，这使得可以形成高质量的薄膜并执行高品质蚀刻。具体地说，当在处理气体供给管道系统中存在具有工业气体运转的单元和不进行工艺气体运转的单元时，将处理气体从筒柜配管系统供给到两个以上的处理单元时，本发明提供了一种气体供应管道系统，其中不处于操作的处理单元的工艺气体供应管线可以一直被吹扫气体吹扫，并且其中气体始终流过所有气体供应管线，以消除停滞加油站。

15. 发明授权

US4869301A Cylinder cabinet piping system 失效
标题翻译：气缸柜管道系统
公开(公告)号：US4869301A
公开(公告)日：1989-09-26
申请号：US194841
申请日：1988-05-17
申请人： Tadahiro Ohmi , Kazuhiko Sugiyama , Fumio Nakahara , Masaru Umeda
发明人： Tadahiro Ohmi , Kazuhiko Sugiyama , Fumio Nakahara , Masaru Umeda
IPC分类号： B01D46/42 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065 , B08B9/00
CPC分类号： H01L21/67069 , Y10T137/4259
摘要： The cylinder cabinet piping system of this invention has a system to supply a purge gas continuously to the main line, or to the main line and the branch line, thereby to prevent stagnation of gas in the purge gas line and to supply a super-high-purity gas to a process unit.
摘要翻译：本发明的气缸柜配管系统具有连续向主管线，主管线和分支管路供给净化气体的系统，从而防止气体在净化气体管路中停滞，并提供超高压纯度气体输送到处理单元。

16. 发明授权

US5921744A Wafer carrying device and wafer carrying method 失效
标题翻译：晶圆承载装置和晶圆承载方式
公开(公告)号：US5921744A
公开(公告)日：1999-07-13
申请号：US900049
申请日：1997-07-24
申请人： Masayuki Toda , Takashi Onoda , Tadahiro Ohmi , Masaru Umeda , Yoichi Kanno
发明人： Masayuki Toda , Takashi Onoda , Tadahiro Ohmi , Masaru Umeda , Yoichi Kanno
IPC分类号： B65G51/03 , H01L21/677 , F16C32/06
CPC分类号： H01L21/67787 , B65G51/03 , H01L21/67784 , Y10S414/135 , Y10S414/136
摘要： A device is provided for carrying a thin plate-like substrate such as a semiconductor wafer and for controlling the position of the wafer by floating it with an inert gas of low impurity concentration. A transferring unit and a control unit are both respectively provided with gas nozzles for floating a wafer and with a gas exhausting and circulating system. A plurality of transferring and control units are sealingly interconnected. Each control unit has a vacuum suction hole at its control center, and is provided with nozzles for controlling the wafer in the radial and circumferential directions, respectively, and with nozzles for stopping the wafer and for transporting the wafer to the next unit. On the bottom of a control space defined by each control unit, grooves which extend from the vacuum suction hole are formed for improving the positional accuracy of stopping the wafer. The grooves have closed ends which are located inside the periphery of the wafer when the center of the wafer is positioned above and centered on the control center of the control unit.
摘要翻译：提供一种用于承载诸如半导体晶片的薄板状基板的装置，并且通过用低杂质浓度的惰性气体浮动来控制晶片的位置。传送单元和控制单元分别设置有用于浮动晶片的气体喷嘴和排气和循环系统。多个传送和控制单元被密封地互连。每个控制单元在其控制中心具有一个真空抽吸孔，并且分别设有用于在径向和圆周方向上控制晶片的喷嘴和用于停止晶片并将晶片输送到下一个单元的喷嘴。在由每个控制单元限定的控制空间的底部形成有从真空吸入孔延伸的槽，以提高晶片停止的位置精度。当晶片的中心位于控制单元的控制中心上方并居中时，槽具有位于晶片周边内部的闭合端。

17. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

18. 发明申请

US20140186162A1 ROTATION MECHANISM FOR GAS EXHAUST PUMP, MANUFACTURING METHOD OF THE SAME, GAS EXHAUST PUMP HAVING ROTATION MECHANISM, AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：用于排气泵的旋转机构，其制造方法，具有旋转机构的气体排气泵及其制造方法
公开(公告)号：US20140186162A1
公开(公告)日：2014-07-03
申请号：US14131299
申请日：2012-06-27
申请人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
发明人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
IPC分类号： F01D5/02
CPC分类号： F01D5/02 , F04C18/16 , F04C25/02 , F04C27/009 , F04C29/023 , F04C2220/30 , F04C2230/91 , Y10T29/49236
摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.
摘要翻译：在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。本发明的旋转机构由旋转轴和密封壳构成。在旋转轴和密封壳体之间，提供预定间隙。在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是形成在其自由表面上具有高平滑度。

19. 发明授权

US08714188B2 Method for water hammerless opening of fluid passage, and method for supplying chemical solutions and device for water hammerless opening for which the method is used 有权
标题翻译：流体通道的无水锤打开方法，以及用于提供化学溶液的方法和使用该方法的无水锤打开装置
公开(公告)号：US08714188B2
公开(公告)日：2014-05-06
申请号：US13239715
申请日：2011-09-22
申请人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
发明人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
IPC分类号： G05D7/06
CPC分类号： F16K47/02 , Y10T137/0324 , Y10T137/0396 , Y10T137/7761 , Y10T137/7762 , Y10T137/7842 , Y10T137/86389 , Y10T137/86397 , Y10T137/86461
摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.
摘要翻译：无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从通过调节控制信号Sc进行电 - 气转换。

20. 发明授权

US08648393B2 Transistor and semiconductor device 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US08648393B2
公开(公告)日：2014-02-11
申请号：US13372159
申请日：2012-02-13
申请人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
发明人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
IPC分类号： H01L27/148
CPC分类号： H01L27/1203 , H01L21/28202 , H01L29/518 , H01L29/78654 , H01L29/78696
摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.
摘要翻译：累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

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