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11. 发明申请

US20060213437A1 Plasma enhanced atomic layer deposition system 审中-公开
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：US20060213437A1
公开(公告)日：2006-09-28
申请号：US11090255
申请日：2005-03-28
申请人： Tadahiro Ishizaka , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Kaoru Yamamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a processing chamber defining an isolated processing space within the processing chamber, and a substrate holder provided within the processing chamber and configured to support a substrate. A first process material supply system is configured to supply a first process material to the processing chamber, a second process material supply system is configured to supply a second process material to the processing chamber and a power source is configured to couple electromagnetic power to the processing chamber. A contaminant shield is positioned along a periphery of the substrate holder and configured to impede external contaminants that permeate the chamber from traveling to a region of the substrate holder, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括限定处理室内的隔离处理空间的处理室和设置在处理室内并被配置为支撑衬底的衬底保持器。第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室，并且电源被配置为将电磁功率耦合到处理房间。污染物屏蔽沿着衬底保持器的周边设置，并且构造成阻止渗透室的外部污染物移动到衬底保持器的区域，其中通过交替地引入第一工艺材料和第二工艺材料而在衬底上形成膜工艺材料。

12. 发明申请

US20070116873A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
标题翻译：用于热和等离子体增强气相沉积的装置和操作方法
公开(公告)号：US20070116873A1
公开(公告)日：2007-05-24
申请号：US11281376
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
IPC分类号： H05H1/24 , C23C16/00 , G06F19/00
CPC分类号： C23C16/45517 , C23C16/4401 , C23C16/4412 , H01J37/32082 , H01J37/32495 , H01J37/32522
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.
摘要翻译：一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度，所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

13. 发明授权

US07314835B2 Plasma enhanced atomic layer deposition system and method 失效
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US07314835B2
公开(公告)日：2008-01-01
申请号：US11083899
申请日：2005-03-21
申请人： Tadahiro Ishizaka , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Kaoru Yamamoto
IPC分类号： H01L21/31
CPC分类号： H01L21/28562 , C23C16/4554 , C23C16/45544 , C23C16/5096 , H01J2237/022 , H01L21/76843 , H01L21/76862
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process chamber, and a second process material is introduced within the process chamber. Electromagnetic power of more than 600 W is coupled to the process chamber during introduction of the second process material in order to generate a plasma that accelerates a reduction reaction between the first and second process materials at a surface of the substrate. The film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底设置在配置为便于PEALD工艺的处理室中。在处理室内引入第一处理材料，并且在处理室内引入第二处理材料。在引入第二工艺材料期间，超过600W的电磁功率耦合到处理室，以便产生加速基板表面处的第一和第二工艺材料之间的还原反应的等离子体。通过交替地引入第一处理材料和第二处理材料，在基板上形成膜。

14. 发明申请

US20060211246A1 Plasma enhanced atomic layer deposition system and method 失效
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US20060211246A1
公开(公告)日：2006-09-21
申请号：US11083899
申请日：2005-03-21
申请人： Tadahiro Ishizaka , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Kaoru Yamamoto
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/4554 , C23C16/45544 , C23C16/5096 , H01J2237/022 , H01L21/76843 , H01L21/76862
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process chamber, and a second process material is introduced within the process chamber. Electromagnetic power of more than 600 W is coupled to the process chamber during introduction of the second process material in order to generate a plasma that accelerates a reduction reaction between the first and second process materials at a surface of the substrate. The film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底设置在配置为便于PEALD工艺的处理室中。在处理室内引入第一处理材料，并且在处理室内引入第二处理材料。在引入第二工艺材料期间，超过600W的电磁功率耦合到处理室，以便产生加速基板表面处的第一和第二工艺材料之间的还原反应的等离子体。通过交替地引入第一处理材料和第二处理材料，在基板上形成膜。

15. 发明申请

US20070116872A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
标题翻译：用于热和等离子体增强气相沉积的装置和操作方法
公开(公告)号：US20070116872A1
公开(公告)日：2007-05-24
申请号：US11281372
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/24 , G06F19/00 , A01K15/02
CPC分类号： C23C16/4585 , C23C16/12 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/303 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/5096 , H01J37/32082 , H01J37/32495 , H01J2237/2001
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space. The system includes a sealing assembly configured to impede gas flow between the process space and the transfer space during translation of the substrate within the process space.
摘要翻译：一种在衬底上进行气相沉积的方法，计算机可读介质和系统，其将衬底处理在与所述处理系统的传送空间真空隔离的处理系统的处理空间中，在第一位置或在处理空间中的第二位置，同时保持与传送空间的真空隔离，并且在第一位置或第二位置处将材料沉积在所述基板上。因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接到所述第二组件并且被配置为在所述传送空间中的第一位置和所述处理空间中的第二位置之间支撑和平移所述衬底。该系统包括密封组件，该密封组件构造成在工艺空间内的衬底平移过程中阻碍工艺空间与传送空间之间的气体流动。

16. 发明授权

US08999841B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08999841B2
公开(公告)日：2015-04-07
申请号：US13566515
申请日：2012-08-03
申请人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/44 , H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/67 , C23C14/02 , C23C14/04 , C23C16/02 , C23C16/04 , H01L21/285
CPC分类号： H01L21/76841 , C23C14/02 , C23C14/046 , C23C16/02 , C23C16/045 , H01L21/02063 , H01L21/02126 , H01L21/28556 , H01L21/3105 , H01L21/67207 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
摘要翻译：半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。该方法还包括在凹槽中形成导电路径的铜。

17. 发明授权

US08026168B2 Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 有权
标题翻译：含有氮化钽碳氮化物阻挡膜的半导体器件及其形成方法
公开(公告)号：US08026168B2
公开(公告)日：2011-09-27
申请号：US11839410
申请日：2007-08-15
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , C23C16/36 , H01L21/28562 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.
摘要翻译：该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

18. 发明授权

US07718527B2 Method for forming cobalt tungsten cap layers 有权
标题翻译：形成钴钨帽层的方法
公开(公告)号：US07718527B2
公开(公告)日：2010-05-18
申请号：US12242914
申请日：2008-10-01
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76856 , H01L21/02063 , H01L21/02074 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.
摘要翻译：提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

19. 发明申请

US20100081276A1 METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS 有权
标题翻译：形成钴铁矿石层的方法
公开(公告)号：US20100081276A1
公开(公告)日：2010-04-01
申请号：US12242914
申请日：2008-10-01
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/768
CPC分类号： H01L21/76856 , H01L21/02063 , H01L21/02074 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.
摘要翻译：提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

20. 发明申请

US20080237860A1 INTERCONNECT STRUCTURES CONTAINING A RUTHENIUM BARRIER FILM AND METHOD OF FORMING 审中-公开
标题翻译：包含椽子膜的互连结构和形成方法
公开(公告)号：US20080237860A1
公开(公告)日：2008-10-02
申请号：US11691897
申请日：2007-03-27
申请人： Tadahiro Ishizaka , Atsushi Gomi
发明人： Tadahiro Ishizaka , Atsushi Gomi
IPC分类号： H01L23/52 , H01L21/3205
CPC分类号： H01L21/76876 , H01L21/28556 , H01L21/32051 , H01L21/76843 , H01L21/76844 , H01L21/76864 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide a method for integrating a Ru barrier film with good barrier properties into Cu metallization. The method includes exposing a substrate to a Ta-, Ti-, or W-containing precursor at a substrate temperature below the thermal decomposition temperature of the Ta-, Ti-, or W-containing precursor on the substrate to form a chemisorbed seed layer of partially decomposed Ta-, Ti-, or W-containing precursor on the substrate. The method further includes depositing a Ru barrier film on the chemisorbed seed layer, and forming bulk Cu metal on the Ru barrier film. According to additional embodiments, an interconnect structure and method of forming are provided.
摘要翻译：本发明的实施方案提供了一种将具有良好阻隔性能的Ru阻挡膜整合到Cu金属化中的方法。该方法包括在低于衬底上的含Ta，Ti或W的前体的热分解温度的衬底温度下将衬底暴露于含Ta，Ti或W的前体，以形成化学吸附的种子层在基底上部分分解的Ta，Ti或W的前体。该方法还包括在化学吸附的种子层上沉积Ru阻挡膜，并在Ru阻挡膜上形成块状Cu金属。根据另外的实施例，提供了互连结构和形成方法。

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