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11. 发明授权

US06492702B2 Circuit-incorporating light receiving device 失效
标题翻译：电路结合光接收装置
公开(公告)号：US06492702B2
公开(公告)日：2002-12-10
申请号：US09820341
申请日：2001-03-29
申请人： Toshihiko Fukushima , Masaru Kubo , Shigeki Hayashida
发明人： Toshihiko Fukushima , Masaru Kubo , Shigeki Hayashida
IPC分类号： H01L31075
CPC分类号： H01L31/103 , H01L27/1443
摘要： A circuit-incorporating light receiving device comprises a first semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a diffusion region of the second conductivity type, provided in a first portion of the second semiconductor layer of the first conductivity type, a circuit element provided in the first portion of the first semiconductor layer of the first conductivity type and a second portion of the second semiconductor layer of the first conductivity type. The second semiconductor layer of the first conductivity type and the diffusion region of the second conductivity type form a light detection photodiode portion, and the diffusion region of the second conductivity type has a diffusion depth less than or equal to a penetration depth of short-wavelength signal light.
摘要翻译：电路结合光接收装置包括第一导电类型的第一半导体衬底，第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的扩散区，设置在第一导电类型的第二半导体层的第一部分，设置在第一导电类型的第一半导体层的第一部分中的电路元件和第一导电类型的第二半导体层的第二部分。第一导电类型的第二半导体层和第二导电类型的扩散区域形成光检测光电二极管部分，并且第二导电类型的扩散区域具有小于或等于短波长穿透深度的漫射深度信号灯。

12. 发明授权

US5960319A Fabrication method for a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5960319A
公开(公告)日：1999-09-28
申请号：US699410
申请日：1996-08-19
申请人： Hiroshi Iwata , Masayuki Nakano , Shigeki Hayashida , Seizou Kakimoto , Toshimasa Matsuoka
发明人： Hiroshi Iwata , Masayuki Nakano , Shigeki Hayashida , Seizou Kakimoto , Toshimasa Matsuoka
IPC分类号： H01L21/265 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/8238 , H01L21/44
CPC分类号： H01L29/6659 , H01L21/26506 , H01L21/2652 , H01L21/26526 , H01L21/28052 , H01L21/28518 , H01L21/823807 , H01L29/665 , Y10S257/90
摘要： A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.
摘要翻译：公开了一种半导体器件及其制造方法。在硅半导体衬底上形成氮化硅膜。然后将杂质离子注入到硅半导体衬底的所需区域中，使得氮化硅膜的氮原子和硅原子与杂质离子的引入一起并入到硅半导体衬底的表面中。硅半导体衬底具有混入其中的最小化的氧含量，并且在注入杂质离子时恢复由氮原子填充的晶体缺陷。制造的半导体器件没有栅极电极耗尽和结电流泄漏之间的折衷关系以及短沟道效应。

13. 发明授权

US07307326B2 Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
标题翻译：光接收元件和光接收装置并入电路和光盘驱动器
公开(公告)号：US07307326B2
公开(公告)日：2007-12-11
申请号：US10499357
申请日：2002-12-10
申请人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/00 , H01L31/0232
CPC分类号： H01L31/103 , H01L31/02161
摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.
摘要翻译：光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

14. 发明申请

US20050126627A1 Solar cell and method for producing the same 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20050126627A1
公开(公告)日：2005-06-16
申请号：US10989486
申请日：2004-11-17
申请人： Shigeki Hayashida
发明人： Shigeki Hayashida
IPC分类号： H01L31/04 , H01L31/00 , H01L31/0236
CPC分类号： H01L31/02363 , Y02E10/547
摘要： A solar cell includes at least: a semiconductor substrate having a pn junction and a plurality of microscopic depressions formed in a light-receiving surface thereof; a front electrode formed on the light-receiving surface of the substrate; and a rear electrode formed on a rear surface of the substrate. The plurality of depressions each have a ratio of the maximum depth to the maximum diameter of 0.5 to 2.
摘要翻译：太阳能电池至少包括：具有pn结的半导体衬底和在其光接收表面中形成的多个微观凹陷; 形成在所述基板的受光面上的前电极; 以及形成在所述基板的后表面上的后电极。多个凹部各自具有最大深度与最大直径的比率为0.5〜2。

15. 发明申请

US20050116320A1 Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
标题翻译：光接收元件和光接收装置并入电路和光盘驱动器
公开(公告)号：US20050116320A1
公开(公告)日：2005-06-02
申请号：US10499357
申请日：2002-12-10
申请人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
发明人： Shigeki Hayashida , Tatsuya Morioka , Yoshihiko Tani , Isamu Ohkubo , Hideo Wada
IPC分类号： H01L31/0216 , H01L31/103 , H01L23/58
CPC分类号： H01L31/103 , H01L31/02161
摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.
摘要翻译：光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

16. 发明授权

US06255702B1 Semiconductor device having junction depths for reducing short channel effect 有权
标题翻译：具有用于降低短沟道效应的结深度的半导体器件
公开(公告)号：US06255702B1
公开(公告)日：2001-07-03
申请号：US09274973
申请日：1999-03-23
申请人： Hiroshi Iwata , Masayuki Nakano , Shigeki Hayashida , Seizou Kakimoto , Toshimasa Matsuoka
发明人： Hiroshi Iwata , Masayuki Nakano , Shigeki Hayashida , Seizou Kakimoto , Toshimasa Matsuoka
IPC分类号： H01L2978
CPC分类号： H01L29/6659 , H01L21/26506 , H01L21/2652 , H01L21/26526 , H01L21/28052 , H01L21/28518 , H01L21/823807 , H01L29/665 , Y10S257/90
摘要： A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.
摘要翻译：公开了一种半导体器件及其制造方法。在硅半导体衬底上形成氮化硅膜。然后将杂质离子注入到硅半导体衬底的所需区域中，使得氮化硅膜的氮原子和硅原子与杂质离子的引入一起并入到硅半导体衬底的表面中。硅半导体衬底具有混入其中的最小化的氧含量，并且在注入杂质离子时恢复由氮原子填充的晶体缺陷。制造的半导体器件没有栅极电极耗尽和结电流泄漏之间的折衷关系以及短沟道效应。

17. 发明授权

US5903029A Insulated-gate field-effect transistor and method for producing the same 失效
标题翻译：绝缘栅场效应晶体管及其制造方法
公开(公告)号：US5903029A
公开(公告)日：1999-05-11
申请号：US902673
申请日：1997-07-30
申请人： Shigeki Hayashida , Seizo Kakimoto
发明人： Shigeki Hayashida , Seizo Kakimoto
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/6659 , H01L29/0847 , H01L29/7833 , H01L21/2652
摘要： An insulated-gate field-effect transistor formed in a substrate of a first conductive type or in a well of the first conductive type formed in the substrate is provided. The transistor includes a channel region containing an impurity of the first conductive type; and a source-drain region containing an impurity of a second conductive type. The source-drain region further contains an impurity of the first conductive type; and a concentration of the impurity of the first conductive type contained in the source-drain region is greater than a concentration of the impurity of the first conductive type contained in the channel region but is less than a concentration of the impurity of the second conductive type contained in the source-drain region.
摘要翻译：提供了形成在第一导电类型的衬底中或形成在衬底中的第一导电类型的阱中的绝缘栅场效应晶体管。晶体管包括含有第一导电类型杂质的沟道区; 以及包含第二导电类型的杂质的源极 - 漏极区域。源极 - 漏极区还包含第一导电类型的杂质; 并且源极 - 漏极区域中包含的第一导电类型的杂质的浓度大于沟道区域中包含的第一导电类型的杂质的浓度，但是小于第二导电类型的杂质的浓度包含在源极 - 漏极区域中。

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