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    • 11. 发明授权
    • Method of manufacturing polarization-controlled surface emitting laser
array
    • 制造偏振控制表面发射激光器阵列的方法
    • US5888842A
    • 1999-03-30
    • US919620
    • 1997-08-28
    • Hye Yong ChuByueng-Su YooHyo-Hoon Park
    • Hye Yong ChuByueng-Su YooHyo-Hoon Park
    • H01S3/00H01S5/183H01S5/42H01L21/20
    • H01S5/18355H01S2301/176H01S5/0425H01S5/18352H01S5/2086H01S5/3202H01S5/423
    • A method for manufacturing a surface-emitting laser array device is disclosed. In order to control the polarization characteristics of the surface-emitting laser, the surface-emitting laser array device according to the present invention can be manufactured by alternately arranging the surface-emitting laser formed by inclining a cavity in the and direction in accordance with the row or the column direction of the surface-emitting laser, so that the polarization characteristics of the surface-emitting laser in two directions which are relatively perpendicular to each other may be obtained. According to the present invention, it has an advantageous effect that the interaction between the adjacent laser beams can be minimized with maintaining the symmetric feature of the lasing beam when manufacturing an integrated surface-emitting laser array device. Further, since the traveling direction of the lasing beam can be controlled depending upon the polarization characteristics, not only the optical interconnection or optical switching can easily be performed, but also the device can effectively be applied to the device, for example, the magneto-optic disk which is sensitive to the polarization characteristics.
    • 公开了一种用于制造表面发射激光器阵列器件的方法。 为了控制表面发射激光器的偏振特性,根据本发明的表面发射激光器阵列器件可以通过将通过将空腔倾斜而形成的表面发射激光器交替布置在<110>和<1 + E,ov 1 + EE 0>方向,从而可以获得表面发射激光器在彼此相对垂直的两个方向上的偏振特性 。 根据本发明,具有这样的有利效果:当制造集成的表面发射激光器阵列器件时,可以通过保持激光束的对称特征来最小化相邻激光束之间的相互作用。 此外,由于可以根据极化特性来控制激光束的行进方向,不仅可以容易地进行光互连或光切换,而且可以有效地将器件应用于器件,例如, 对偏振特性敏感的光盘。
    • 12. 发明授权
    • Method for fabricating a vertical-cavity surface-emitting laser diode
    • 用于制造垂直腔表面发射激光二极管的方法
    • US5661076A
    • 1997-08-26
    • US623817
    • 1996-03-29
    • Byeung-Su YooHyo-Hoon ParkHye-Yong ChuMin-Soo Park
    • Byeung-Su YooHyo-Hoon ParkHye-Yong ChuMin-Soo Park
    • H01S5/183H01S5/42H01L21/20
    • H01S5/18347H01S2301/166H01S5/2218H01S5/423
    • A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposited on a surface of an etched active layer and an etched cavity. Also, a bottom emitting laser is provided which is formed by, with the metal electrode as a mask, etching the top mirror layer and the active layer, depositing the amorphous GaAs onto the etched portion and planarizing the deposited GaAs layer and depositing p-type metal pad over the amorphous GaAs around the formed laser device. Also, a top emission type laser is provided which is formed by, with a photoresist as a mask, etching the top mirror layer and the active layer, planarizing the GaAs layer and depositing p-type metal pad containing a window for light emission which is made smaller than laser area over the amorphous GaAs around the formed laser device. Thus, a more stable single fundamental transverse mode than in the conventional device can be obtained.
    • 提供了一种在垂直腔表面发射激光二极管中非侵蚀性处理蚀刻表面的方法。 为了获得稳定的单个基本横模,在100至300度的低温下,非晶GaAs沉积在蚀刻的有源层和蚀刻腔的表面上。 另外,提供了以金属电极为掩模形成的底部发射激光器,蚀刻上镜面层和有源层,将非晶GaAs沉积到蚀刻部分上并使沉积的GaAs层平坦化并沉积p型 在形成的激光器件周围的非晶GaAs上的金属焊盘。 另外,提供了以光致抗蚀剂为掩模形成的顶部发射型激光器,蚀刻上镜面层和有源层,使GaAs层平坦化并沉积含有用于发光的窗口的p型金属焊盘, 在形成的激光器件周围的非晶GaAs周围比激光区域小。 因此,可以获得比常规装置更稳定的单根横向模式。