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    • 14. 发明授权
    • CMOS image sensors and methods of manufacturing the same
    • CMOS图像传感器及其制造方法
    • US07875491B2
    • 2011-01-25
    • US12010349
    • 2008-01-24
    • Doo-cheol ParkJung-hyeon KimJun-young Lee
    • Doo-cheol ParkJung-hyeon KimJun-young Lee
    • H01L21/00
    • H01L27/14609H01L27/14645H01L27/14689
    • A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.
    • 互补金属氧化物半导体图像传感器可以包括:半导体衬底; 形成在所述半导体衬底的第一部分上的光电二极管; 在所述半导体衬底上形成的传输门,在所述光电二极管附近,以传输光电二极管中累积的光电荷; 浮动扩散区,形成在半导体衬底的第二部分上,在与光电二极管的传输栅极相对的一侧,以适应光电荷; 和/或形成在传输门下方并且与光电二极管的一侧接触以传送光电荷的沟道区。 传输门可以至少部分地由透明材料形成。 互补金属氧化物半导体图像传感器的制造方法可以包括:形成光电二极管; 形成与光电二极管分离的浮动扩散区域; 和/或在光电二极管附近形成传输门,以转移积聚在光电二极管中的光电荷。