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11. 发明授权

US07991447B2 Biological photometric equipment 有权
标题翻译：生物测光设备
公开(公告)号：US07991447B2
公开(公告)日：2011-08-02
申请号：US10577944
申请日：2004-07-01
申请人： Hiroki Sato , Masashi Kiguchi , Atsushi Maki , Tsuyoshi Yamamoto
发明人： Hiroki Sato , Masashi Kiguchi , Atsushi Maki , Tsuyoshi Yamamoto
IPC分类号： A61B5/1455
CPC分类号： A61B5/14553
摘要： To control information obtained from inside of a living body with higher precision as compared to that in the conventional technology by controlling a ratio of intensities of light, directed to a trial body, in a plurality of wavelength ranges different in peak wavelength from each other, a measurement error included in information obtained from the living body can be controlled by changing a ratio of intensity of the light in the first wavelength range against that of the light in the second wavelength range. When intensity of irradiated light is limited from the viewpoint of safety to the trial subject, keeping a ratio of the light irradiated to the trial body in the first wavelength range against that of the light in the second wavelength range under a prespecified value and also changing the ratio of irradiated light intensities under the prespecified value.
摘要翻译：通过在峰值波长不同的多个波长范围内控制指向试验体的光的强度比，通过控制比现有技术更高的精度从内部获得的生物体的信息，可以通过改变第一波长范围内的光的强度与第二波长范围内的光的强度的比例来控制从生物体获得的信息中包括的测量误差。当照射光的强度从安全性的角度受限于试验对象时，将照射在试验体上的光的第1波长范围内的光与第2波长范围内的光的比例保持在规定值以下，照射光强度的比例在预先指定的值之下。

12. 发明授权

US07899283B2 Optical device and method for manufacturing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US07899283B2
公开(公告)日：2011-03-01
申请号：US12868163
申请日：2010-08-25
申请人： Manabu Matsuda , Tsuyoshi Yamamoto
发明人： Manabu Matsuda , Tsuyoshi Yamamoto
IPC分类号： G02B6/34
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/0654 , H01S5/1215 , H01S5/124 , H01S5/2209 , H01S5/2275 , H01S5/32333 , H01S5/3403 , H01S5/3434
摘要： An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided.
摘要翻译：一种光学装置，包括：光波导; 以及沿着光波导设置的多个衍射光栅层，其中每个衍射光栅层包括衍射光栅，每个衍射光栅包括不连续的第一半导体层和埋入第一半导体层的第二半导体层，第一和第二半导体具有不同折射率的层，多个衍射光栅层包括至少两个衍射光栅层相对于设置有衍射光栅的区域的长度而彼此不同，并且多个衍射光栅层的重叠区域中的衍射光栅的衍射光栅层具有相同的相位和周期。

13. 发明授权

US07791995B2 Image information detecting apparatus 失效
标题翻译：图像信息检测装置
公开(公告)号：US07791995B2
公开(公告)日：2010-09-07
申请号：US11668984
申请日：2007-01-30
申请人： Tsuyoshi Yamamoto , Katsuhiko Masuda , Shigefumi Morishima , Toru Tanaka
发明人： Tsuyoshi Yamamoto , Katsuhiko Masuda , Shigefumi Morishima , Toru Tanaka
IPC分类号： G11B7/00
CPC分类号： G11B7/0037
摘要： An image information detecting apparatus is disclosed that comprises: a semiconductor laser that emits a laser light beam; a light receiving unit that receives a reflected light beam of the laser light beam applied to a color changing layer of an optical disc, the color changing layer being formed from a photo-sensitive material of a heat-sensitive material, and that outputs an electrical signal corresponding to the level of the reflected light beam; and a detecting unit that detects image information based on the electric signal, wherein the image information detecting apparatus detects the image information indicating an image from the color changing layer after the image has been formed therein.
摘要翻译：公开了一种图像信息检测装置，包括：发射激光的半导体激光器; 光接收单元，其接收施加到光盘的变色层的激光束的反射光束，所述变色层由感光材料的感光材料形成，并且输出电信号对应于反射光束的电平; 以及检测单元，其基于所述电信号检测图像信息，其中所述图像信息检测装置在形成所述图像之后检测指示来自所述变色层的图像的图像信息。

14. 发明申请

US20100221002A1 Optical signal processing apparatus 有权
标题翻译：光信号处理装置
公开(公告)号：US20100221002A1
公开(公告)日：2010-09-02
申请号：US12659270
申请日：2010-03-02
申请人： Hiroki Ooi , Akira Miura , Tsuyoshi Yamamoto , Naoki Hashimoto
发明人： Hiroki Ooi , Akira Miura , Tsuyoshi Yamamoto , Naoki Hashimoto
IPC分类号： H04J14/00
CPC分类号： G02B6/29313 , G02B6/2931 , G02B6/29383 , G02B6/3512 , G02B6/356 , G02B26/0833 , H04J14/0204 , H04J14/0208 , H04J14/0212 , H04J14/0213
摘要： An OADM in a wavelength division multiplexing transmission system includes a wavelength selection switch that selects a predetermined wavelength from a multiple optical signal obtained by multiplexing a phase modulated signal and an intensity modulated signal and outputs the selected wavelength signal to a predetermined output port. The wavelength selection switch has a different delay for each wavelength of the multiple optical signal. For example, the wavelength selection switch includes a mirror array. Optical paths from the surfaces of mirrors arranged on the mirror array to the diffraction grating are different in the case of adjacent mirrors.
摘要翻译：波分复用传输系统中的OADM包括波长选择开关，其从通过复用相位调制信号和强度调制信号获得的多个光信号中选择预定波长，并将所选择的波长信号输出到预定输出端口。波长选择开关对于多个光信号的每个波长具有不同的延迟。例如，波长选择开关包括反射镜阵列。在相邻反射镜的情况下，从反射镜阵列上布置在反射镜阵列上的反射镜的表面的光路不同。

15. 发明授权

US07732821B2 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US07732821B2
公开(公告)日：2010-06-08
申请号：US12073837
申请日：2008-03-11
申请人： Naohiro Suzuki , Tsuyoshi Yamamoto , Toshiyuki Morishita
发明人： Naohiro Suzuki , Tsuyoshi Yamamoto , Toshiyuki Morishita
IPC分类号： H01L29/72
CPC分类号： H01L29/66068 , H01L21/0465 , H01L29/0615 , H01L29/063 , H01L29/0638 , H01L29/1608 , H01L29/45 , H01L29/7828
摘要： The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.
摘要翻译： SiC半导体器件包括由碳化硅制成的第一导电类型的衬底，由碳化硅制成的第一导电类型的漂移层，漂移层比衬底掺杂少，由衬底的一部分构成的单元部分以及漂移层的一部分，由基板的另一部分和漂移层的另一部分构成的圆周部分，周向部分形成为围绕电池部分，以及形成在第二导电类型的RESURF层漂移层的表面部分，以便位于圆周部分中。 RESURF层由具有不同杂质浓度的第一和第二RESURF层构成，第二RESURF层与第一RESURF层的外周接触并延伸到电池单元的周围。

16. 发明授权

US07643394B2 Optical disk, optical disk recording method, and optical disk recording apparatus 失效
标题翻译：光盘，光盘记录方法和光盘记录装置
公开(公告)号：US07643394B2
公开(公告)日：2010-01-05
申请号：US11150234
申请日：2005-06-13
申请人： Yutaka Kashihara , Hideki Takahashi , Akihito Ogawa , Yutaka Yamanaka , Shigeru Shimonou , Tatsunori Ide , Tsuyoshi Yamamoto , Katsuki Hattori , Masato Fuma
发明人： Yutaka Kashihara , Hideki Takahashi , Akihito Ogawa , Yutaka Yamanaka , Shigeru Shimonou , Tatsunori Ide , Tsuyoshi Yamamoto , Katsuki Hattori , Masato Fuma
IPC分类号： G11B7/0045
CPC分类号： G11B27/329 , G11B7/00736 , G11B20/1217 , G11B2020/1275 , G11B2020/1277 , G11B2020/1292 , G11B2220/218 , G11B2220/2537 , G11B2220/2562
摘要： In an optical disk recording method of recording data onto a recordable optical disk which includes a data zone where data is recorded and a management data zone where management data indicating the recorded part of the data zone is recorded, an extended management data zone in which the management data is to be recorded is set in the data zone in response to an extension instruction.
摘要翻译：在将数据记录到包括记录数据的数据区的可记录光盘上的数据的光盘记录方法以及记录了表示数据区的记录部分的管理数据的管理数据区的情况下，将要记录的管理数据设置在响应于扩展指令的数据区中。

17. 发明申请

US20090290223A1 OPTICAL APPARATUS AND OPTICAL TRANSMISSION APPARATUS 失效
标题翻译：光学装置和光传输装置
公开(公告)号：US20090290223A1
公开(公告)日：2009-11-26
申请号：US12356806
申请日：2009-01-21
申请人： Hirofumi AOTA , Kohei Shibata , Tamotsu Akashi , Tsuyoshi Yamamoto
发明人： Hirofumi AOTA , Kohei Shibata , Tamotsu Akashi , Tsuyoshi Yamamoto
IPC分类号： G02B27/30 , G02B3/00
CPC分类号： G02B6/29313 , G02B6/29311 , G02B6/32 , G02B6/3512 , G02B6/3552 , G02B6/356 , G02B6/3582 , G02B27/30
摘要： An optical apparatus includes a collimation optical member for collimating and outputting input light, a condensing optical member for condensing light from the collimation optical member and a light blocking mask member provided at a place on an optical path of the input light for light blocking part of the input light, and enhances the degree of freedom in design of an optical system.
摘要翻译：一种光学装置，包括用于准直和输出输入光的准直光学构件，用于聚集来自准直光学构件的光的聚光光学构件和设置在输入光的光路上的位置处的遮光掩模构件，输入光，并增强了光学系统的设计自由度。

18. 发明授权

US07616675B2 Semiconductor laser device and manufacturing method of the same 有权
标题翻译：半导体激光器件及其制造方法相同
公开(公告)号：US07616675B2
公开(公告)日：2009-11-10
申请号：US11902622
申请日：2007-09-24
申请人： Kenichi Kawaguchi , Tsuyoshi Yamamoto
发明人： Kenichi Kawaguchi , Tsuyoshi Yamamoto
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , B82Y20/00 , H01S5/0207 , H01S5/021 , H01S5/0261 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18369 , H01S5/3027 , H01S5/3036 , H01S5/3412 , H01S2304/04
摘要： Disclosed is a semiconductor laser device capable of realizing efficient current injection and a method of manufacturing the same. The method includes the steps of: forming a DBR mirror over a Si substrate; forming an n-type conductive layer over the DBR mirror; forming a luminescent layer over a part of the n-type conductive layer; forming an insulating layer over a side surface of the luminescent layer over the n-type conductive layer; forming a p-type conductive layer over the insulating layer and the luminescent layer; forming another DBR mirror over the p-type conductive layer so as to be located immediately above the luminescent layer; forming an electrode electrically connected to the n-type conductive layer; and forming another electrode over the p-type conductive layer.
摘要翻译：公开了能够实现高效电流注入的半导体激光装置及其制造方法。该方法包括以下步骤：在Si衬底上形成DBR镜; 在DBR镜上形成n型导电层; 在n型导电层的一部分上形成发光层; 在所述n型导电层的上方在所述发光层的侧面上形成绝缘层; 在绝缘层和发光层上形成p型导体层; 在p型导电层上形成另一个DBR镜，以便位于发光层的正上方; 形成与n型导电层电连接的电极; 并在p型导电层上形成另一电极。

19. 发明授权

US07613502B2 Optical bioinstrumentation for living body 有权
标题翻译：活体光生物仪器
公开(公告)号：US07613502B2
公开(公告)日：2009-11-03
申请号：US11205184
申请日：2005-08-17
申请人： Yukari Yamamoto , Atsushi Maki , Masashi Kiguchi , Tsuyoshi Yamamoto
发明人： Yukari Yamamoto , Atsushi Maki , Masashi Kiguchi , Tsuyoshi Yamamoto
IPC分类号： A61B5/00
CPC分类号： A61B5/14553 , A61B5/0042 , A61B5/064 , A61B5/6814 , A61B5/7425 , A61B5/743 , A61B34/20 , A61B2034/2051 , A61B2034/2055 , A61B2034/2063
摘要： In a probe positioning technology, an optical bioinstrumentation includes a region selecting unit that is used to delineate a region of interest in an anatomical image of a subject, a computing unit that determines a recommended probe position according to the region of interest, a probe position sensor that detects a current probe position, a computing unit that calculates the distance between the recommended probe position and the current probe position, and an alarm device that generates an alarm sound or the like when the distance falls within a predetermined range. Moreover, the optical bioinstrumentation for living body further includes a memory unit in which the probe position is saved together with measurement data.
摘要翻译：在探针定位技术中，光学生物仪器包括区域选择单元，其用于描绘对象的解剖图像中的感兴趣区域，计算单元，其根据感兴趣的区域确定推荐的探针位置，探针位置检测当前探头位置的传感器，计算推荐探测位置与当前探测位置之间的距离的计算单元，以及当距离在预定范围内时产生报警声等的报警装置。此外，生物体的光学生物仪器还包括存储单元，其中探测位置与测量数据一起被保存。

20. 发明申请

US20090263926A1 Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method 有权
公开(公告)号：US20090263926A1
公开(公告)日：2009-10-22
申请号：US12457677
申请日：2009-06-18
申请人： Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
发明人： Nobuaki Hatori , Tsuyoshi Yamamoto , Hisao Sudo , Yasuhiko Arakawa
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/06226 , H01S5/0655 , H01S5/3086 , H01S5/3412 , H01S5/34306 , H01S5/34353 , H01S2301/18
摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

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