专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07867859B1 Gate electrode with depletion suppression and tunable workfunction 有权
标题翻译：具有耗尽抑制和可调功能的栅电极
公开(公告)号：US07867859B1
公开(公告)日：2011-01-11
申请号：US12140955
申请日：2008-06-17
申请人： Steven Hung , Judy L. Hoyt , James F. Gibbons
发明人： Steven Hung , Judy L. Hoyt , James F. Gibbons
IPC分类号： H01L21/336 , H01L21/20 , H01L21/4763 , H01L21/3205
CPC分类号： H01L29/1054 , H01L21/28079 , H01L29/4958
摘要： Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the semiconductor device at a selected voltage. The gate is formed having two different conductive materials with different electric workfunctions that both significantly contribute to the overall workfunction of the gate. The relative composition, thickness, and arrangement of each of the two conductive materials is selected to attain a gate electrode workfunction that is different than the workfunctions of each of the two layers and that sets the threshold voltage of the semiconductor device. The adjustability of the effective workfunction of the gate electrode can be applied to a variety of semiconductor devices. The ability to reduce gate depletion effects also provides enhanced device current drive.
摘要翻译：通过具有可调谐的有效功函数和减少的栅极耗尽效应的栅极结构来提高半导体器件的性能。根据示例性实施例，半导体器件的设计阈值电压被调整为包括提供具有能够使半导体器件处于选定电压的功能的功能门的方式。栅极形成为具有不同电功能的两种不同的导电材料，这两种导电材料都显着地有助于栅极的整体功能。选择两种导电材料中的每一种的相对组成，厚度和布置，以获得不同于两层中的每一层的功函数的栅电极功函数，并设定半导体器件的阈值电压。栅电极的有效功函数的可调性可应用于各种半导体器件。降低栅极耗尽效应的能力还提供增强的器件电流驱动。

12. 发明申请

US20070209930A1 APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM 审中-公开
标题翻译：使用低能量等离子体系统制造高介电常数晶体闸门的装置
公开(公告)号：US20070209930A1
公开(公告)日：2007-09-13
申请号：US11614022
申请日：2006-12-20
申请人： Thai Cheng Chua , Alex M. Paterson , Steven Hung , Patricia M. Liu , Tatsuya Sato , Valentin Todorow , John P. Holland
发明人： Thai Cheng Chua , Alex M. Paterson , Steven Hung , Patricia M. Liu , Tatsuya Sato , Valentin Todorow , John P. Holland
IPC分类号： C23C14/00
CPC分类号： C23C8/10 , C23C8/36 , C23C14/021 , C23C14/027 , C23C14/48 , C23C14/5806 , C23C14/5826 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01L21/67207
摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.
摘要翻译：本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

13. 外观设计

USD502089S1 Safe hook 失效
标题翻译：安全钩
公开(公告)号：USD502089S1
公开(公告)日：2005-02-22
申请号：US29204777
申请日：2004-05-05
申请人： Steven Hung
设计人： Steven Hung

14. 发明授权

US07645710B2 Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system 有权
标题翻译：使用低能量等离子体系制造高介电常数晶体管栅的方法和装置
公开(公告)号：US07645710B2
公开(公告)日：2010-01-12
申请号：US11683984
申请日：2007-03-08
申请人： Christopher Sean Olsen , Thai Cheng Chua , Steven Hung , Patricia M. Liu , Tatsuya Sato , Alex M. Paterson , Valentin Todorow , John P. Holland
发明人： Christopher Sean Olsen , Thai Cheng Chua , Steven Hung , Patricia M. Liu , Tatsuya Sato , Alex M. Paterson , Valentin Todorow , John P. Holland
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01J37/32082 , H01J37/32146 , H01L21/02148 , H01L21/02197 , H01L21/02266 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/316 , H01L29/495 , H01L29/4966 , H01L29/513
摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.
摘要翻译：本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。

15. 发明申请

US20070212895A1 METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM 有权
标题翻译：使用低能量等离子体系统制造高介电常数晶体闸门的方法和装置
公开(公告)号：US20070212895A1
公开(公告)日：2007-09-13
申请号：US11614019
申请日：2006-12-20
申请人： Thai Cheng CHUA , Steven Hung , Patricia M. Liu , Tatsuya Sato , Alex M. Paterson , Valentin Todorow , John P. Holland
发明人： Thai Cheng CHUA , Steven Hung , Patricia M. Liu , Tatsuya Sato , Alex M. Paterson , Valentin Todorow , John P. Holland
IPC分类号： H01L21/31
CPC分类号： H01L21/02175 , H01J37/32082 , H01J37/32146 , H01L21/02148 , H01L21/02266 , H01L21/0234 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31155 , H01L21/3144 , H01L21/316 , H01L29/495 , H01L29/4966 , H01L29/513
摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.
摘要翻译：本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

16. 发明授权

US07014230B1 Structure hoist-use base hoisting ring 有权
标题翻译：结构起重机起吊环
公开(公告)号：US07014230B1
公开(公告)日：2006-03-21
申请号：US10984910
申请日：2004-11-10
申请人： Steven Hung
发明人： Steven Hung
IPC分类号： B66C1/66
CPC分类号： B66C1/66 , Y10T403/32213 , Y10T403/32221 , Y10T403/32975
摘要： An improved structure hoist-use base hoisting ring comprised of a U-shaped clevis movably suspended from the two sides at the lower end of a cylindrical base mount as well as a circular top mounting bushing at the upper section and a bottom mounting bushing at the center section having an upwardly projecting neck and a passageway that are situated over the top and bottom lateral surfaces of a bore through the interior portion of the cylindrical base mount, enabling the installation of a bolt into the top mounting bushing center section and downward through the bottom mounting bushing and the fastening and positioning of its threaded section into the threaded hole of a weight at the lower end. Among the features of the present invention, an annular recess is disposed along the top surface and center section of the cylindrical base mount that provides for the nesting of a flat planar bearing. The center portion opening of the planar bearing is sleeved over the periphery of the neck of the bottom mounting bushing such that its top surface is against the circular top mounting bushing bottom side, enabling the lifting of the load of the weight at the bottom end of the hoisting ring. Since the planar bearing so postured has active rotating capability, the hoisting ring lifting the weight has convenient operation that is adjustable and freely rotatable.
摘要翻译：一种改进的结构提升用基础提升环，其由在圆柱形基座的下端处可移动地悬挂在两侧的U形U形夹以及在上部的圆形顶部安装衬套和位于上部的底部安装衬套中心部分具有向上突出的颈部和通道，其通过圆柱形基座的内部位于孔的顶部和底部侧表面之上，使得能够将螺栓安装到顶部安装衬套中心部分中并且向下通过底部安装衬套，并将其螺纹部分紧固并定位在下端的重量的螺纹孔中。在本发明的特征中，环形凹部沿着圆柱形基座的顶表面和中心部分设置，其提供平面平面轴承的嵌套。平面轴承的中心部分开口套在底部安装衬套的颈部的周边上，使得其顶部表面抵靠圆顶顶部安装衬套底侧，使得能够在底部安装衬套的底端处提升重量的负载吊环。由于如此姿态的平面轴承具有主动旋转能力，提升重量的提升环具有可调节和可自由旋转的方便的操作。

17. 发明申请

US20140065798A1 METHOD AND APPARATUS FOR FORMING GATE STACK ON Si, SiGe or Ge CHANNELS 有权
标题翻译：用于在Si，SiGe或Ge通道上形成栅极堆叠的方法和装置
公开(公告)号：US20140065798A1
公开(公告)日：2014-03-06
申请号：US14016027
申请日：2013-08-30
申请人： Khaled Z. Ahmed , Steven Hung , Kaushal K. Singh , Sundar Ramamurthy
发明人： Khaled Z. Ahmed , Steven Hung , Kaushal K. Singh , Sundar Ramamurthy
IPC分类号： H01L21/30 , H01L21/67
CPC分类号： H01L21/3003 , H01L21/02164 , H01L21/02301 , H01L21/02315 , H01L21/28194 , H01L21/2822 , H01L21/28255 , H01L21/306 , H01L21/6715 , H01L21/67207 , H01L29/66545
摘要： Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing.
摘要翻译：提供了用于将用作栅极堆叠中的沟道的衬底表面功能化的方法和装置。硅，锗和锗锗衬底表面通过等离子体处理中的一种或多种硫和硒进行功能化。

18. 发明授权

US07837838B2 Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus 失效
标题翻译：使用低能量等离子体装置制造高介电常数晶体管栅极的方法
公开(公告)号：US07837838B2
公开(公告)日：2010-11-23
申请号：US11614027
申请日：2006-12-20
申请人： Thai Cheng Chua , Alex M. Paterson , Steven Hung , Patricia M. Liu , Tatsuya Sato , Valentin Todorow , John P. Holland
发明人： Thai Cheng Chua , Alex M. Paterson , Steven Hung , Patricia M. Liu , Tatsuya Sato , Valentin Todorow , John P. Holland
IPC分类号： C23C14/34
CPC分类号： H01L21/31645 , C23C14/10 , C23C14/345 , C23C14/3471 , H01L21/02148 , H01L21/02156 , H01L21/02161 , H01L21/02238 , H01L21/02255 , H01L21/02266 , H01L21/02321 , H01L21/02323 , H01L21/02329 , H01L21/02337 , H01L21/0234 , H01L21/28167 , H01L21/28185 , H01L21/28202 , H01L21/28273 , H01L21/28282 , H01L21/3141 , H01L21/3144 , H01L21/31612 , H01L21/3162 , H01L21/31641 , H01L29/51
摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.
摘要翻译：本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

19. 发明申请

US20080116706A1 Hook elastic body protective device for heavy object crane hook 审中-公开
标题翻译：钩体弹簧体保护装置
公开(公告)号：US20080116706A1
公开(公告)日：2008-05-22
申请号：US11974764
申请日：2006-11-20
申请人： Steven Hung
发明人： Steven Hung
IPC分类号： B66C1/22
CPC分类号： B66C1/34
摘要： A hook elastic body protective device for heavy object crane hook, wherein a pair of opposite and rear-inclined protection boards with large head and small lower part are fixed at rear side of hook by fixing bolt through bolt holes made on protection boards and through hole respectively made at lower two sides of top hole of shackle and rear side of hook; basing on such structure, elastic body for buckle mounted inside of hook can fold inward to open hook and retreat into two protection boards to hide, elastic body is free of damage by external collision, so that it is easy to use and use life of crane hook can be extended accordingly.
摘要翻译：一种用于重型起重机吊钩的钩弹性体保护装置，其中一对具有大头部和小下部的相对和后倾的保护板通过固定螺栓通过在保护板和通孔上形成的螺栓孔固定在钩的后侧分别在钩钩和后侧顶孔的下两侧制成; 在这种结构的基础上，安装在钩内的带扣的弹性体可以向内折叠以打开钩子并退回到两个保护板中以隐藏，弹性体没有受到外部碰撞的损坏，因此易于使用和使用起重机的使用寿命钩可以相应地延长。

20. 外观设计

USD556550S1 Coupling self-locking hook 有权
标题翻译：联锁自锁钩
公开(公告)号：USD556550S1
公开(公告)日：2007-12-04
申请号：US29263438
申请日：2006-07-24
申请人： Steven Hung
设计人： Steven Hung

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式