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    • 12. 发明授权
    • Synchronous integrated memory
    • 同步集成存储器
    • US06928025B1
    • 2005-08-09
    • US09621905
    • 2000-07-24
    • Thomas HeinThilo MarxPatrick HeyneTorsten Partsch
    • Thomas HeinThilo MarxPatrick HeyneTorsten Partsch
    • G11C7/10G11C7/22G11C11/4076G11C8/00
    • G11C7/222G11C7/1072G11C7/22G11C11/4076
    • An output circuit (OUT) can be activated via an activation input (AKT), in the activated state starts an output process for data (D) to be read out, in synchronism with the first internal clock (CLKI1), and outputs the data (D) with a specific phase shift (ΔTOUT) with respect to the first internal clock (CLKI1), in synchronism with the external clock (CLKE), at a data connection (P). A counting unit (CT) starts a counting process for recording the number of successively following first levels of the first internal clock (CLKI1) as soon as a second internal clock (CLKI2), which is synchronized to the external clock (CLKE), for the first time assumes a first level while an output control signal (PAR) is at first level. It activates the output circuit (OUT) as soon as the number of successively following first levels of the first internal clock (CLKI1) has reached a predetermined value.
    • 可以通过激活输入(AKT)激活输出电路(OUT),在激活状态下,与第一内部时钟(CLKI 1)同步地开始读出数据(D)的输出处理,并输出 在数据连接(P)下与外部时钟(CLKE)同步地具有相对于第一内部时钟(CLKI 1)的特定相移(DeltaTOUT)的数据(D)。 一旦与外部时钟(CLKE)同步的第二内部时钟(CLKI 2),计数单元(CT)开始计数,用于记录连续追随的第一内部时钟(CLKI 1)的第一电平的数量, ,当输出控制信号(PAR)处于第一电平时,第一次采用第一电平。 一旦第一内部时钟(CLKI 1)的连续跟随的第一电平的数量达到预定值,它就激活输出电路(OUT)。
    • 18. 发明申请
    • Read latency control circuit
    • 读延迟控制电路
    • US20050270852A1
    • 2005-12-08
    • US11136712
    • 2005-05-25
    • Stefan DietrichThomas HeinPatrick HeynePeter Schroegmeier
    • Stefan DietrichThomas HeinPatrick HeynePeter Schroegmeier
    • G06F3/06G11C7/22G11C11/4076
    • G11C11/4076G11C7/1066G11C7/20G11C7/22G11C7/222G11C11/4072G11C2207/2272
    • The invention provides a method for setting and controlling a read latency (L) by means of a FIFO-based read latency control circuit for a read access to a semiconductor memory, having the method steps of providing a common internal clock signal; generating an internal first clock signal and an internal second clock signal, which is different from the first clock signal, from the common clock signal; generating an output pointer for reading out the read data from the first clock signal; generating an input pointer for reading in the read data from the second clock signal; initializing the input and output pointers by allocating a defined, fixedly predetermined time offset between output pointer and input pointer. The invention furthermore provides a corresponding circuit arrangement for carrying out the method.
    • 本发明提供了一种用于通过用于对半导体存储器的读取访问的基于FIFO的读延迟控制电路来设置和控制读延迟(L)的方法,具有提供公共内部时钟信号的方法步骤; 从公共时钟信号产生与第一时钟信号不同的内部第一时钟信号和内部第二时钟信号; 产生用于从所述第一时钟信号读出读取数据的输出指针; 生成用于从所述第二时钟信号读取所述读取数据的输入指针; 通过在输出指针和输入指针之间分配定义的,固定地预定的时间偏移来初始化输入和输出指针。 本发明还提供了一种用于执行该方法的相应电路装置。
    • 20. 发明授权
    • Read latency control circuit
    • 读延迟控制电路
    • US07404018B2
    • 2008-07-22
    • US11136712
    • 2005-05-25
    • Stefan DietrichThomas HeinPatrick HeynePeter Schroegmeier
    • Stefan DietrichThomas HeinPatrick HeynePeter Schroegmeier
    • G06F3/00G06F13/00
    • G11C11/4076G11C7/1066G11C7/20G11C7/22G11C7/222G11C11/4072G11C2207/2272
    • The invention provides a method for setting and controlling a read latency (L) by means of a FIFO-based read latency control circuit for a read access to a semiconductor memory, having the method steps of providing a common internal clock signal; generating an internal first clock signal and an internal second clock signal, which is different from the first clock signal, from the common clock signal; generating an output pointer for reading out the read data from the first clock signal; generating an input pointer for reading in the read data from the second clock signal; initializing the input and output pointers by allocating a defined, fixedly predetermined time offset between output pointer and input pointer. The invention furthermore provides a corresponding circuit arrangement for carrying out the method.
    • 本发明提供了一种用于通过用于对半导体存储器的读取访问的基于FIFO的读延迟控制电路来设置和控制读延迟(L)的方法,具有提供公共内部时钟信号的方法步骤; 从公共时钟信号产生与第一时钟信号不同的内部第一时钟信号和内部第二时钟信号; 产生用于从所述第一时钟信号读出读取数据的输出指针; 生成用于从所述第二时钟信号读取所述读取数据的输入指针; 通过在输出指针和输入指针之间分配定义的,固定地预定的时间偏移来初始化输入和输出指针。 本发明还提供了一种用于执行该方法的相应电路装置。