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11. 发明授权

US07743307B2 Defect information managing method, information recording and/or reproducing apparatus, and information reproducing apparatus 失效
标题翻译：缺陷信息管理方法，信息记录和/或再现装置和信息再现装置
公开(公告)号：US07743307B2
公开(公告)日：2010-06-22
申请号：US11455742
申请日：2006-06-20
申请人： Minoru Akiyama , Hideki Takahashi , Akihito Ogawa , Chosaku Noda
发明人： Minoru Akiyama , Hideki Takahashi , Akihito Ogawa , Chosaku Noda
IPC分类号： G06F11/30 , G06F11/00 , G11B20/10 , G11B20/18
CPC分类号： G11B20/1883 , G11B2020/1893 , G11B2220/20
摘要： In order to select the latest defect management information, the latest selection information first is selected by searching a plurality of selection information areas for a currently active selection information area in which the latest selection information is recorded and subsequently the latest defect management information is obtained by searching a plurality of defect management areas for a currently active defect management area in which the latest defect management information is recorded. If there is no unused defect management area in which defect management information can be alternatively recorded in lieu of the currently active defect management area, recording operation is limited.
摘要翻译：为了选择最新的缺陷管理信息，首先通过搜索多个选择信息区域来选择最新的选择信息，以选择其中记录有最新选择信息的当前活动选择信息区域，然后通过以下步骤获得最新的缺陷管理信息：搜索多个缺陷管理区域中记录有最新缺陷管理信息的当前活动缺陷管理区域。如果不存在缺陷管理信息可替换地记录当前有效缺陷管理区域的未使用的缺陷管理区域，则记录操作受到限制。

12. 发明授权

US07504729B2 Semiconductor device with extraction electrode 有权
标题翻译：带引出电极的半导体器件
公开(公告)号：US07504729B2
公开(公告)日：2009-03-17
申请号：US11265097
申请日：2005-11-03
申请人： Hideki Takahashi
发明人： Hideki Takahashi
IPC分类号： H01L23/48
CPC分类号： H01L23/49562 , H01L23/488 , H01L24/37 , H01L24/40 , H01L2224/37011 , H01L2224/371 , H01L2224/37599 , H01L2224/4007 , H01L2224/40137 , H01L2224/45124 , H01L2224/73253 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00 , H01L2224/48
摘要： First and second connection electrodes are formed separately to be opposed to each other on an emitter electrode of an IGBT. Other first and second connection electrodes are formed separately to be opposed to each other on an anode electrode of a diode. A first electrode interconnection part extends from one side portion of an extraction electrode and is bent inwardly. A second electrode interconnection part extends from the other side portion to be opposed to the first electrode interconnection part. The first and second electrode interconnection parts located to face the IGBT are soldered only to the first and second connection electrodes, respectively. Similarly, the first and second electrode interconnection parts located to be opposed to the diode are soldered only to the other first and second connection electrodes, respectively.
摘要翻译：第一连接电极和第二连接电极分别形成为在IGBT的发射极上彼此相对。其他第一和第二连接电极分别形成为在二极管的阳极电极上彼此相对。第一电极互连部分从引出电极的一个侧部延伸并向内弯曲。第二电极互连部分从另一侧部分延伸以与第一电极互连部分相对。位于IGBT对面的第一和第二电极互连部分仅分别焊接到第一和第二连接电极。类似地，位于与二极管相对的第一和第二电极互连部分仅分别焊接到另一个第一和第二连接电极。

13. 发明授权

US07491982B2 Diode having low forward voltage drop 有权
标题翻译：二极管具有低正向压降
公开(公告)号：US07491982B2
公开(公告)日：2009-02-17
申请号：US11320641
申请日：2005-12-30
申请人： Hideki Takahashi
发明人： Hideki Takahashi
IPC分类号： H01L29/74
CPC分类号： H01L29/404 , H01L29/0619 , H01L29/8611
摘要： A semiconductor device, including: a semiconductor substrate of the first conductivity type having a first surface and a second surface; a base region of the second conductivity type formed on the first surface of the semiconductor substrate; a guard ring region of the second conductivity type formed around the base region, and having the second type impurity of which concentration is lower than that of the base region; a first electrode formed on the base region; and a second electrode formed on the second surface of the semiconductor substrate, further including a base peripheral region formed around the base region and being connected to the base region, wherein the base peripheral region is deeper than the base region and has the substantially constant depth, and the concentration of the second conductivity type impurity included in the base peripheral region is lower than that included in the base region.
摘要翻译：一种半导体器件，包括：具有第一表面和第二表面的第一导电类型的半导体衬底; 形成在所述半导体衬底的所述第一表面上的所述第二导电类型的基极区域; 所述第二导电类型的保护环区域形成在所述基极区域周围，并且所述第二类型杂质的浓度低于所述基极区域的浓度; 形成在所述基底区域上的第一电极; 以及形成在所述半导体衬底的第二表面上的第二电极，还包括形成在所述基极区域周围并与所述基极区域连接的基极周边区域，其中所述基极周边区域比所述基极区域深，并且具有基本恒定的深度，并且包含在基础周边区域中的第二导电型杂质的浓度低于基底区域中包含的浓度。

14. 发明授权

US07471602B2 Recording/reproducing method and recording/reproducing apparatus and optical disk 失效
标题翻译：记录/再现方法和记录/再现装置和光盘
公开(公告)号：US07471602B2
公开(公告)日：2008-12-30
申请号：US11127223
申请日：2005-05-12
申请人： Akihito Ogawa , Yutaka Kashihara , Hideki Takahashi , Yutaka Yamanaka , Shigeru Shimonou , Tatsunori Ide
发明人： Akihito Ogawa , Yutaka Kashihara , Hideki Takahashi , Yutaka Yamanaka , Shigeru Shimonou , Tatsunori Ide
IPC分类号： G11B7/00
CPC分类号： G11B7/1267 , G11B7/00736
摘要： An optical disk medium in which a learning area can be expanded, an optical disk information recording method and an optical disk apparatus are provided. A first lead-in area and second lead-in area are provided on the inner side and outer side of a data area. The first lead-in area includes a first learning area, management information recording area and data connection area and the second lead-in area includes a protection area which protects the user data in the inner portion thereof and a second learning area which is provided on the outer side of the protection area and sets an optimum condition for an operation of recording data into the data area. An area in which information indicating the utilization state of the protection area is recorded is prepared in one of the management information recording area and data connection area.
摘要翻译：提供学习区域可扩展的光盘介质，光盘信息记录方法和光盘装置。第一导入区和第二导入区设置在数据区的内侧和外侧。第一导入区域包括第一学习区域，管理信息记录区域和数据连接区域，并且第二导入区域包括保护其内部的用户数据的保护区域和设置在其上的第二学习区域保护区域的外侧，并为将数据记录到数据区域中的操作设定最佳条件。在管理信息记录区域和数据连接区域之一中准备记录了表示保护区域的使用状态的信息的区域。

15. 发明授权

US07432135B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07432135B2
公开(公告)日：2008-10-07
申请号：US11463502
申请日：2006-08-09
申请人： Hideki Takahashi
发明人： Hideki Takahashi
IPC分类号： H01L21/332 , H01L29/74 , H01L29/78
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/0834 , H01L29/32 , H01L29/66348
摘要： A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first major surface of the semiconductor substrate; a base layer of a second conductivity type formed on the first major surface of the semiconductor layer and separated by the semiconductor layer from the semiconductor substrate; a pair of groove portions penetrating the base layer from the first major surface and reaching at least the semiconductor layer; an insulation film disposed inside the groove portion and a gate electrode formed inside the groove portion through the insulation film; a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on the second major surface of the semiconductor substrate; and an emitter region disposed on the first major surface of the base layer and along the groove portions, wherein a transistor controlling a current flowing in the base layer by the gate electrode and a diode made of the semiconductor layer and the base layer are disposed within the semiconductor device, and the emitter region is disposed only in an area which is between the pair of groove portions.
摘要翻译：一种半导体器件，包括：具有第一和第二主表面的第一导电类型的半导体衬底; 形成在半导体衬底的第一主表面上的第一导电类型半导体层; 形成在半导体层的第一主表面上并由半导体层与半导体衬底隔开的第二导电类型的基极层; 从所述第一主表面穿透所述基底层并且至少达到所述半导体层的一对沟槽部; 设置在所述槽部内的绝缘膜和通过所述绝缘膜形成在所述槽部内的栅电极; 形成在半导体衬底的第二主表面上的第一导电类型半导体层和第二导电类型半导体层; 以及发射极区域，其设置在所述基底层的所述第一主表面上并且沿着所述沟槽部分，其中，控制由所述栅电极在所述基极层中流动的电流的晶体管和由所述半导体层和所述基极层制成的二极管设置在半导体器件和发射极区域仅设置在一对槽部之间的区域中。

16. 发明授权

US07313862B2 Method of mounting components on a PCB 有权
标题翻译：将组件安装在PCB上的方法
公开(公告)号：US07313862B2
公开(公告)日：2008-01-01
申请号：US11372087
申请日：2006-03-10
申请人： Hideki Takahashi
发明人： Hideki Takahashi
IPC分类号： H05K3/30
CPC分类号： H05K1/0269 , H05K3/0008 , H05K3/1216 , H05K3/303 , H05K3/3452 , H05K3/3484 , H05K2201/09781 , H05K2201/0989 , H05K2201/09918 , Y10T29/4913 , Y10T29/49131 , Y10T29/49144
摘要： A printed wiring board is disclosed. The printed wiring board includes a board recognition mark formed of a conductive foil, a first component land covered with resist, and a second component land not covered with the resist. The board recognition mark is defined by an area of the conductive foil exposed from a resist opening having the same shape and size as the conductive foil.
摘要翻译：公开了一种印刷线路板。印刷电路板包括由导电箔形成的板识别标记，被抗蚀剂覆盖的第一部件焊盘和未被抗蚀剂覆盖的第二部件焊盘。板识别标记由从具有与导电箔相同的形状和尺寸的抗蚀剂开口暴露的导电箔的区域限定。

17. 发明申请

US20070097844A1 INFORMATION RECORDING MEDIUM, INFORMATION REPRODUCING APPARATUS, INFORMATION REPRODUCING METHOD AND INFORMATION RECORDING METHOD 失效
公开(公告)号：US20070097844A1
公开(公告)日：2007-05-03
申请号：US11564462
申请日：2006-11-29
申请人： Hideo Ando , Yutaka Kashihara , Akihito Ogawa , Hideki Takahashi
发明人： Hideo Ando , Yutaka Kashihara , Akihito Ogawa , Hideki Takahashi
IPC分类号： G11B7/24
CPC分类号： G11B7/00458 , G11B7/0053 , G11B7/00736 , G11B7/00745 , G11B7/261 , G11B20/10009 , G11B20/10055 , G11B20/1012 , G11B20/1217 , G11B20/1426 , G11B20/1833 , G11B2007/0013 , G11B2020/122 , G11B2020/1222 , G11B2020/1239 , G11B2020/1244 , G11B2020/1245 , G11B2020/1275 , G11B2020/1277 , G11B2020/1278 , G11B2020/1287 , G11B2020/1457 , G11B2220/21 , G11B2220/216 , G11B2220/237 , G11B2220/2537
摘要： An information recording medium includes a user information storage area which stores user information, a test write area which is extendable and for test write of information, a spare area which is extendable and capable of alternatively storing user information, and a recording position management information area including recordable range information expressing recordable ranges in the aforesaid test write area and the aforesaid spare area. The information recording medium, an information reproducing apparatus, an information reproducing method and an information recording method which make it easy to record and reproduce information properly are provided.

18. 发明申请

US20070097820A1 INFORMATION RECORDING MEDIUM, INFORMATION REPRODUCING APPARATUS,INFORMATION REPRODUCING METHOD AND INFORMATION RECORDING METHOD 审中-公开
标题翻译：信息记录介质，信息再现装置，信息再现方法和信息记录方法
公开(公告)号：US20070097820A1
公开(公告)日：2007-05-03
申请号：US11564519
申请日：2006-11-29
申请人： Hideo ANDO , Yutaka Kashihara , Akihito Ogawa , Hideki Takahashi
发明人： Hideo ANDO , Yutaka Kashihara , Akihito Ogawa , Hideki Takahashi
IPC分类号： G11B20/00
CPC分类号： G11B7/00458 , G11B7/0053 , G11B7/00736 , G11B7/00745 , G11B7/261 , G11B20/10009 , G11B20/10055 , G11B20/1012 , G11B20/1217 , G11B20/1426 , G11B20/1833 , G11B2007/0013 , G11B2020/122 , G11B2020/1222 , G11B2020/1239 , G11B2020/1244 , G11B2020/1245 , G11B2020/1275 , G11B2020/1277 , G11B2020/1278 , G11B2020/1287 , G11B2020/1457 , G11B2220/21 , G11B2220/216 , G11B2220/237 , G11B2220/2537
摘要： An information recording medium includes a user information storage area which stores user information, a test write area which is extendable and for test write of information, a spare area which is extendable and capable of alternatively storing user information, and a recording position management information area including recordable range information expressing recordable ranges in the aforesaid test write area and the aforesaid spare area. The information recording medium, an information reproducing apparatus, an information reproducing method and an information recording method which make it easy to record and reproduce information properly are provided.
摘要翻译：信息记录介质包括存储用户信息的用户信息存储区域，可扩展的测试写入区域和用于测试写入信息的可扩展的备用区域，并且能够交替地存储用户信息，以及记录位置管理信息区域包括在上述测试写入区域和上述备用区域中表示可记录范围的可记录范围信息。提供了使得容易地正确地记录和再现信息的信息记录介质，信息再现装置，信息再现方法和信息记录方法。

19. 发明授权

US07154145B2 Insulated gate transistor incorporating diode 有权
标题翻译：并联二极管的绝缘栅晶体管
公开(公告)号：US07154145B2
公开(公告)日：2006-12-26
申请号：US10917298
申请日：2004-08-13
申请人： Hideki Takahashi
发明人： Hideki Takahashi
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/66348 , H01L29/7397 , H01L29/7803 , H01L29/7805 , H01L29/7806
摘要： A p-type base layer shaped like a well is formed for each of IGBT cells, and a p+-type collector layer and an n+-type cathode layer are formed on a surface opposite to a surface on which the p-type base layer is formed so as to be situated just below the p-type base layer. The p-type base layer of each of the IGBT cells includes a flat region including an emitter region and a bottom surface penetrated by a main trench, and first and second side diffusion regions between which the flat region is interposed. The first side diffusion region is situated just above the n+-type cathode layer and each of the bottom surfaces of the side diffusion regions forms a parabola-shaped smooth curve in longitudinal section. By replacing the p+-type collector layer with the n+-type cathode layer, it is possible to apply features of the above structure to a power MOSFET.
摘要翻译：为每个IGBT单元形成像阱一样的p型基极层，并且在第一和第二类型的集电极层和n + +型阴极层上形成n + 与形成p型基底层的表面相对的表面，以便位于p型基底的正下方。每个IGBT单元的p型基极层包括包括发射极区域和由主沟槽穿透的底表面的平坦区域，以及插入有平坦区域的第一和第二侧向扩散区域。第一侧扩散区位于正极型阴极层正上方，并且侧扩散区的每个底表面在纵截面上形成抛物线形平滑曲线。通过用n + SUP +型阴极层代替p + SUP +型集电极层，可以将上述结构的特征应用于功率MOSFET。

20. 发明授权

US07123753B2 Mascara selecting method, mascara selecting system, and mascara counseling tool 有权
标题翻译：睫毛膏选择方法，睫毛膏选择系统和睫毛膏咨询工具
公开(公告)号：US07123753B2
公开(公告)日：2006-10-17
申请号：US10432760
申请日：2001-12-25
申请人： Shun Takahashi , Fumie Morohoshi , Hideki Takahashi
发明人： Shun Takahashi , Fumie Morohoshi , Hideki Takahashi
IPC分类号： G06K9/00
CPC分类号： A45D44/005 , A45D2044/007
摘要： A salesperson counseling a customer at a shop can adequately and quickly select a mascara that gives satisfaction to the customer. A method for selecting a mascara includes a first measurement step of measuring an eyelash state of a customer, and a selection step of selecting a mascara based on the result of the measurement made in the first measurement step. Further, between the first measurement step and the selection step, an ascertaining step of ascertaining a desire of the customer for eyelashes is provided, and in the selection step, a mascara is selected based on the measurement result obtained from the first measurement step and the desire of the customer obtained from the ascertaining step.
摘要翻译：在店内咨询顾客的销售人员可以充分，快速地选择一种让客户满意的睫毛膏。一种选择睫毛膏的方法包括测量顾客的睫毛状态的第一测量步骤和基于在第一测量步骤中进行的测量结果来选择睫毛膏的选择步骤。此外，在第一测量步骤和选择步骤之间，提供确定用户对睫毛的期望的确定步骤，并且在选择步骤中，基于从第一测量步骤和第一测量步骤获得的测量结果来选择睫毛膏从确定步骤获得的客户的愿望。

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