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11. 发明授权

US08890273B2 Methods and apparatus for an improved reflectivity optical grid for image sensors 有权
标题翻译：用于图像传感器的改进的反射率光栅的方法和装置
公开(公告)号：US08890273B2
公开(公告)日：2014-11-18
申请号：US13363280
申请日：2012-01-31
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/00 , H01L31/0224
CPC分类号： H01L31/022441 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L31/022433
摘要： An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.
摘要翻译：用于图像传感器的改进的反射光栅。在一个实施例中，背面照明的CIS器件包括具有像素阵列区域的半导体衬底，该像素阵列区域包括形成在半导体衬底的前侧表面上的多个光电传感器，每个光电传感器在像素阵列区域中形成像素; 设置在半导体衬底的背侧表面上的光栅格材料，所述光栅格材料被图案化以形成限定像素阵列区域中的每个像素并在半导体衬底上方延伸的光栅，所述光栅具有侧壁和顶部一部分; 以及形成在光栅上的高反射涂层，包括纯金属的纯金属涂层，其纯度至少为99％，纯金属涂层上的高k电介质涂层具有大于约2.0的折射率。还公开了方法。

12. 发明申请

US20130153901A1 BSI Image Sensor Chips and Methods for Forming the Same 有权
标题翻译： BSI图像传感器芯片及其形成方法
公开(公告)号：US20130153901A1
公开(公告)日：2013-06-20
申请号：US13352980
申请日：2012-01-18
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0368 , H01L21/20
CPC分类号： H01L27/14623 , H01L27/1464 , H01L27/14685
摘要： A device includes semiconductor substrate having a front side and a backside. A polysilicon layer is disposed on the backside of the semiconductor substrate. The polysilicon layer includes a portion doped with a p-type impurity. A dielectric layer is disposed on the backside of the semiconductor substrate, wherein the polysilicon layer is between the semiconductor substrate and the polysilicon layer.
摘要翻译：一种器件包括具有正面和背面的半导体衬底。多晶硅层设置在半导体衬底的背面。多晶硅层包括掺杂有p型杂质的部分。介电层设置在半导体衬底的背面，其中多晶硅层位于半导体衬底和多晶硅层之间。

13. 发明授权

US08946083B2 In-situ formation of silicon and tantalum containing barrier 有权
标题翻译：硅和钽的屏障原位形成
公开(公告)号：US08946083B2
公开(公告)日：2015-02-03
申请号：US13167857
申请日：2011-06-24
申请人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
发明人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
IPC分类号： H01L21/44 , H01L21/3105 , H01L21/768 , H01L23/48
CPC分类号： H01L23/4827 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76855 , H01L21/76898 , H01L23/481 , H01L23/50 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
摘要翻译：一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。富硅层的一部分延伸到开口中并与电介质层接触。在富含硅层上方形成含钽层。进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

14. 发明申请

US20130149807A1 Backside Illuminated CMOS Image Sensor 有权
标题翻译：背面照明CMOS图像传感器
公开(公告)号：US20130149807A1
公开(公告)日：2013-06-13
申请号：US13416004
申请日：2012-03-09
申请人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
发明人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
IPC分类号： H01L31/0232 , H01L31/02
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14698
摘要： A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
摘要翻译：背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区，其中扩展的光有源区通过使用背侧离子注入形成处理。背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

15. 发明授权

US09219092B2 Grids in backside illumination image sensor chips and methods for forming the same 有权
标题翻译：背面照明图像传感器芯片中的栅格及其形成方法
公开(公告)号：US09219092B2
公开(公告)日：2015-12-22
申请号：US13396426
申请日：2012-02-14
申请人： Shiu-Ko JangJian , Szu-An Wu , Sheng-Wen Chen
发明人： Shiu-Ko JangJian , Szu-An Wu , Sheng-Wen Chen
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/1446 , H01L27/14632 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
摘要翻译：一种器件包括具有正面和背面的半导体衬底。光敏装置设置在半导体基板的正面上。第一和第二栅极线彼此平行，并且设置在半导体衬底的背面并且覆盖其上。堆叠层包括粘合层，粘合层上的金属层和金属层上的高折射率层。粘合层，金属层和高折射率层基本上共形，并且在第一和第二栅格线的顶表面和侧壁上延伸。

16. 发明授权

US09123608B2 Backside illuminated CMOS image sensor 有权
标题翻译：背面照明CMOS图像传感器
公开(公告)号：US09123608B2
公开(公告)日：2015-09-01
申请号：US13416004
申请日：2012-03-09
申请人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
发明人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14698
摘要： A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
摘要翻译：背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区，其中扩展的光有源区通过使用背侧离子注入形成处理。背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

17. 发明申请

US20130207213A1 Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same 有权
标题翻译：网格背面照明图像传感器芯片及其形成方法
公开(公告)号：US20130207213A1
公开(公告)日：2013-08-15
申请号：US13396426
申请日：2012-02-14
申请人： Shiu-Ko JangJian , Szu-An Wu , Sheng-Wen Chen
发明人： Shiu-Ko JangJian , Szu-An Wu , Sheng-Wen Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1446 , H01L27/14632 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
摘要翻译：一种器件包括具有正面和背面的半导体衬底。光敏装置设置在半导体基板的正面上。第一和第二栅极线彼此平行，并且设置在半导体衬底的背面并且覆盖其上。堆叠层包括粘合层，粘合层上的金属层和金属层上的高折射率层。粘合层，金属层和高折射率层基本上共形，并且在第一和第二栅格线的顶表面和侧壁上延伸。

18. 发明申请

US20120326312A1 In-Situ Formation of Silicon and Tantalum Containing Barrier 有权
标题翻译：硅和钽含有屏障的现场形成
公开(公告)号：US20120326312A1
公开(公告)日：2012-12-27
申请号：US13167857
申请日：2011-06-24
申请人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
发明人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
IPC分类号： H01L21/28 , H01L23/48 , B82Y40/00
CPC分类号： H01L23/4827 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76855 , H01L21/76898 , H01L23/481 , H01L23/50 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
摘要翻译：一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。富硅层的一部分延伸到开口中并与电介质层接触。在富含硅层上方形成含钽层。进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

19. 发明申请

US20130193540A1 Apparatus and Method for Reducing Dark Current in Image Sensors 有权
标题翻译：降低图像传感器暗电流的装置和方法
公开(公告)号：US20130193540A1
公开(公告)日：2013-08-01
申请号：US13436364
申请日：2012-03-30
申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/0216
CPC分类号： H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译：一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层层上的等离子体增强钝化层。

20. 发明授权

US09379275B2 Apparatus and method for reducing dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的装置和方法
公开(公告)号：US09379275B2
公开(公告)日：2016-06-28
申请号：US13436364
申请日：2012-03-30
申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号： H01L31/18 , H01L31/103 , H01L27/146
CPC分类号： H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译：一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层层上的等离子体增强钝化层。

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