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11. 发明申请

US20100006940A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20100006940A1
公开(公告)日：2010-01-14
申请号：US12497720
申请日：2009-07-06
申请人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L29/786 , H01L27/12 , H01L21/762
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

12. 发明申请

US20080157032A1 METHOD FOR MANUFACTURING LIGHT-EMITTING MATERIAL 审中-公开
标题翻译：制造发光材料的方法
公开(公告)号：US20080157032A1
公开(公告)日：2008-07-03
申请号：US11873041
申请日：2007-10-16
申请人： Junichiro SAKATA , Yoshiaki YAMAMOTO , Yayoi TOYOSUMI
发明人： Junichiro SAKATA , Yoshiaki YAMAMOTO , Yayoi TOYOSUMI
IPC分类号： C09K11/64
CPC分类号： C09K11/641
摘要： There has been a problem in that kinds of conventional light-emitting materials are not sufficient; therefore, choices of materials and manufacturers of light emitting materials are limited, resulting in an expensive light-emitting device. The present invention provides a novel method for manufacturing a light-emitting material suitable for mass production that can be manufactured at a low cost, and a novel light-emitting material which can provide light emission with high intensity. A mixture in which CuAlS2 is added in a small amount into ZnS as a base material is put in a reaction container. Then, the reaction container is hermetically sealed and the mixture is baked. Note that the reaction container is preferably hermetically sealed in a state where a reduced pressure is held in the reaction container. Further, in a light-emitting element using a light-emitting material obtained, electroluminescence with high luminance can be obtained.
摘要翻译：存在这种常规发光材料种类不足的问题。因此，发光材料的材料和制造商的选择受到限制，导致昂贵的发光装置。本发明提供了可以低成本制造适合于批量生产的发光材料的新型制造方法，以及能够提供高强度发光的新颖的发光材料。将CuAlS 2 O 3少量添加到作为基材的ZnS中的混合物放入反应容器中。然后，将反应容器密封并将混合物烘烤。注意，反应容器优选在反应容器中保持减压的状态下气密密封。此外，在使用得到的发光材料的发光元件中，可以获得高亮度的电致发光。

13. 发明申请

US20070216293A1 LIGHT-EMITTING MATERIAL, LIGHT-EMITTING DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：发光材料，发光装置和电子器具
公开(公告)号：US20070216293A1
公开(公告)日：2007-09-20
申请号：US11679423
申请日：2007-02-27
申请人： Kohei YOKOYAMA , Yoshiaki YAMAMOTO , Junichiro SAKATA , Takahiro KAWAKAMI
发明人： Kohei YOKOYAMA , Yoshiaki YAMAMOTO , Junichiro SAKATA , Takahiro KAWAKAMI
IPC分类号： H05B33/14 , H05B33/00
CPC分类号： C09K11/612 , H05B33/14
摘要： It is an object of the present invention to provide a light-emitting material with high light emission intensity. It is another object to provide a light-emitting element with high light emission efficiency. Moreover, it is another object to provide a light-emitting device and an electronic appliance with reduced power consumption. A light-emitting material contains at least a light-emitting substance, a base material, and an additive which is an element belonging to group 14 of the periodic table or a compound containing two or more kinds of elements belonging to group 14, or a compound containing at least two or more kinds of elements each belonging to a different group chosen from group 13, group 14, and group 15. Due to the light-emitting material, a light-emitting element and an electronic appliance which has high light emission efficiency and can be driven at a low voltage can be obtained.
摘要翻译：本发明的目的是提供具有高发光强度的发光材料。另一个目的是提供一种具有高发光效率的发光元件。此外，另一个目的是提供一种具有降低的功耗的发光装置和电子设备。发光材料至少含有属于周期表第14族的元素的发光物质，基材和添加剂，或含有属于第14族的两种以上的元素的化合物，或含有至少两种或更多种元素的化合物，各自属于选自第13族，第14族和第15族的不同基团。由于发光材料，发光元件和具有高发光性的电子器件效率可以在低电压下驱动得到。

14. 发明申请

US20070194321A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20070194321A1
公开(公告)日：2007-08-23
申请号：US11673153
申请日：2007-02-09
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
IPC分类号： H01L29/04
CPC分类号： H05B33/22 , H01L51/5278 , H05B33/10
摘要： It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.
摘要翻译：本发明的目的是提供一种可以在低电压下驱动的发光元件。本发明的其他目的是提供一种具有高发光效率的发光元件; 具有高亮度的发光元件; 具有长寿命发光的发光元件; 具有降低的功耗的发光元件和电子设备; 以及可以以低成本制造的发光元件和电子设备。发光元件在第一电极和第二电极之间具有发光层和阻挡层，发光层含有基材和杂质元素，并且阻挡层设置成与第一电极和第二电极接触。电极。当施加电压使得第二电极的电位变得高于第一电极的电位时获得发光。

15. 发明申请

US20100323504A1 LASER IRRADIATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：激光辐照装置及制造半导体器件的方法
公开(公告)号：US20100323504A1
公开(公告)日：2010-12-23
申请号：US12852636
申请日：2010-08-09
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： H01L21/20 , H01L21/26
CPC分类号： H01L21/02683 , B23K26/0738 , B23K26/082 , B23K26/0821 , B23K26/0853 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/3244 , H01L27/3295 , H01L51/5253
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够用具有均匀能量密度的激光束照射照射物体，而不会使光学系统复杂化。本发明的激光照射装置包括激光振荡器，用于在照射物体的表面上沿单轴方向重复扫描从激光振荡器发射的激光束的光点的光学系统，以及用于移动的位置控制装置照射对象相对于激光束在垂直于单轴方向的方向上的位置。

16. 发明申请

US20100207040A1 LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：使用其的半导体器件的曝光装置和制造方法
公开(公告)号：US20100207040A1
公开(公告)日：2010-08-19
申请号：US12757063
申请日：2010-04-09
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： G21G5/00
CPC分类号： H01L21/02675 , G03F7/70383 , H01L21/2026 , H01L21/268 , H01L27/1266 , H01L27/1285 , Y10T29/41
摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.
摘要翻译：当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域重合来进行曝光。通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

17. 发明申请

US20090137101A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20090137101A1
公开(公告)日：2009-05-28
申请号：US12247470
申请日：2008-10-08
申请人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Shunpei YAMAZAKI , Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L21/71
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.
摘要翻译：为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

18. 发明申请

US20090072343A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件和电子器件
公开(公告)号：US20090072343A1
公开(公告)日：2009-03-19
申请号：US12207634
申请日：2008-09-10
申请人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Yoichi IIKUBO , Yoshiaki YAMAMOTO , Kenichiro MAKINO , Akihisa SHIMOMURA , Eiji HIGA , Tatsuya MIZOI , Yoji NAGANO , Fumito ISAKA , Tetsuya KAKEHATA , Shunpei YAMAZAKI
IPC分类号： H01L29/00
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/76254 , H01L21/84 , H01L27/1214 , H01L29/4908 , H01L29/66772 , H01L29/78603 , H01L29/78654
摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.
摘要翻译：使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。而且，不用化学抛光而形成的高性能半导体器件。此外，使用该半导体器件的电子设备。包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为大于或等于1nm且小于或等于7nm。或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

19. 发明申请

US20070215881A1 LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20070215881A1
公开(公告)日：2007-09-20
申请号：US11680354
申请日：2007-02-28
申请人： Yoshiaki YAMAMOTO , Yoshiharu HIRAKATA , Junichiro SAKATA , Hiroki OHARA
发明人： Yoshiaki YAMAMOTO , Yoshiharu HIRAKATA , Junichiro SAKATA , Hiroki OHARA
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/30 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are not considered to be problematic. According to one feature of the present invention, unevenness is formed over the surface of a compound semiconductor substrate through chemical treatment, a compound semiconductor layer is formed over the surface of the compound semiconductor substrate having unevenness, atoms of the compound semiconductor substrate are diffused into the compound semiconductor layer through heat treatment, a first conductive layer is formed over the compound semiconductor substrate, and a second conductive layer is formed over the compound semiconductor layer.
摘要翻译：本发明的一个目的是提供一种新的发光元件及其制造方法，其中在形成层间的化合物半导体衬底和成膜层之间的界面状态和相互扩散之间，使材料活性地扩散到成膜层中这不是有问题的。根据本发明的一个特征，通过化学处理在化合物半导体衬底的表面上形成凹凸，在具有凹凸的化合物半导体衬底的表面上形成化合物半导体层，化合物半导体衬底的原子扩散到通过热处理的化合物半导体层，在化合物半导体衬底上形成第一导电层，并且在化合物半导体层上形成第二导电层。

20. 发明申请

US20070194306A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：发光元件，发光装置和电子设备
公开(公告)号：US20070194306A1
公开(公告)日：2007-08-23
申请号：US11674428
申请日：2007-02-13
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
IPC分类号： H01L29/08
CPC分类号： C09K11/08 , H01L51/5088 , H05B33/22
摘要： It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.
摘要翻译：本发明的目的是提供一种能够进行低电压驱动的发光元件。发光效率高; 具有高发光亮度; 并具有长的发光寿命。另一个目的是提供一种减少功耗的发光装置和电子设备; 并且可以以低成本制造。提供了一种发光元件，其包括发光层和在第一电极和第二电极之间包括复合材料的层，其中发光层包括基底材料和杂质元素，所述包括复合材料的层包括有机化合物和无机化合物，包括复合材料的层被设置为与第二电极接触，并且通过施加电压获得发光，使得第二电极的电位高于第一电极的电位电极。

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