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11. 发明申请

US20070202622A1 METHOD FOR MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER 有权
标题翻译：用于制造表面发射半导体激光的方法
公开(公告)号：US20070202622A1
公开(公告)日：2007-08-30
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

12. 发明授权

US06684013B2 Optical waveguide device to be optically poled, method of manufacturing optical waveguide device to be optically poled, and method of optically poling optical waveguide device 失效
标题翻译：光学波导装置，光学波导装置的制造方法以及光波导装置的光学方法
公开(公告)号：US06684013B2
公开(公告)日：2004-01-27
申请号：US09862479
申请日：2001-05-23
申请人： Yuko Seki , Yutaka Urino , Akio Furukawa , Tadahiko Hanada , Naoki Ofusa , Shigeru Yoneda
发明人： Yuko Seki , Yutaka Urino , Akio Furukawa , Tadahiko Hanada , Naoki Ofusa , Shigeru Yoneda
IPC分类号： G02B626
CPC分类号： G02F1/3136 , G02B6/102 , G02B6/13 , G02B2006/12142 , G02F1/0126
摘要： A waveguide optical switch has a waveguide whose refractive index changes can be controlled by an electro-optic effect and an UV guide waveguide for coupling an ultraviolet radiation to the waveguide. A portion of the waveguide and a portion of the UV guide waveguide make up a directional coupler.
摘要翻译：波导光开关具有其折射率变化可以通过电光效应控制的波导和用于将紫外线辐射耦合到波导的UV导引波导。波导的一部分和UV导引波导的一部分构成定向耦合器。

13. 发明授权

US07180269B2 Battery charging method 失效
标题翻译：电池充电方式
公开(公告)号：US07180269B2
公开(公告)日：2007-02-20
申请号：US10896013
申请日：2004-07-22
申请人： Yoshikazu Izumi , Yasushi Kuroda , Akio Furukawa , Takahiro Yamashita
发明人： Yoshikazu Izumi , Yasushi Kuroda , Akio Furukawa , Takahiro Yamashita
IPC分类号： H02J7/04 , H02J7/16 , H02J7/06 , H02J7/24
CPC分类号： H02J7/0091 , H02J7/0073
摘要： The battery charging detects battery temperature and includes a temperature maintaining charging operation wherein average charging current is controlled to drive battery temperature to a holding temperature, and charging is performed while maintaining battery temperature at that holding temperature. In addition, a temperature increasing charging operation occurs prior to the temperature maintaining charging operation. The battery is charged with a current which raises battery temperature until the holding temperature is reached. When battery temperature rises to the holding temperature in the temperature increasing charging operation, charging can transition to the temperature maintaining charging operation.
摘要翻译：电池充电检测电池温度，并且包括维持充电操作，其中平均充电电流被控制以将电池温度驱动到保持温度，并且在将电池温度保持在该保持温度的同时进行充电。此外，在温度保持充电操作之前发生升温充电操作。电池充满电流，提高电池温度直到达到保持温度。当电池温度升高到升温充电操作中的保持温度时，充电可以转变到维持充电操作。

14. 发明申请

US20050089075A1 Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device 有权
标题翻译：表面发射半导体激光器及其制造方法以及光学器件
公开(公告)号：US20050089075A1
公开(公告)日：2005-04-28
申请号：US10977197
申请日：2004-10-28
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01S5/18 , H01S5/183 , H01S5/187 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了具有稳定保持高功率单水平模式的结构的面发光半导体激光器（VCSEL），以及包括具有该表面发射半导体激光器的光源装置的光学装置。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

15. 发明授权

US4264173A Lens tube guide frame for use in lens tube retractable type camera 失效
标题翻译：透镜管引导框架用于镜头管可伸缩式摄像机
公开(公告)号：US4264173A
公开(公告)日：1981-04-28
申请号：US37469
申请日：1979-05-09
申请人： Akio Furukawa , Kousaku Sawabe , Fumihiro Miyagawa , Hiroo Nakano , Atushi Tokunaga
发明人： Akio Furukawa , Kousaku Sawabe , Fumihiro Miyagawa , Hiroo Nakano , Atushi Tokunaga
IPC分类号： G03B17/04 , G02B7/20 , G03B17/02
CPC分类号： G03B17/02 , G02B7/20
摘要： A lens tube guide frame holds a retractable lens tube in the body of the camera and also holds a lens and a film surface in their respective correct positions for making exposures. The lens tube guide frame can be easily inserted in the body of the camera and includes a standard surface at its front inner wall opposite the open side of the lens tube guide frame to provide an exact stop for forward movement of the lens tube. The guide frame cross section is U-shaped or box-shaped, and has two projection portions directed outwards at the open rear end to engage adjacent side walls of the camera body. The lens tube guide frame, with the lens tube already in it, is inserted into the camera body through the back side when assembling, whereby the lens tube guide frame can be positioned without any adjustment.
摘要翻译：透镜管引导框架将可伸缩透镜管保持在相机的主体中，并且还将透镜和胶片表面保持在它们各自正确的位置以进行曝光。透镜管引导框架可以容易地插入照相机的主体中，并且在其前内壁上包括与透镜管引导框架的开放侧相对的标准表面，以准确地停止透镜管的向前运动。引导框架横截面为U形或箱形，并且在打开的后端处具有向外指向的两个突出部分，以接合相机主体的相邻侧壁。透镜管引导框架，其透镜管已经在其中，当组装时通过背面插入照相机主体中，从而透镜管引导框架可以不进行任何调整而定位。

16. 发明授权

US08390920B2 Laser device, laser display apparatus, laser radiating apparatus, and nonlinear optical element 失效
标题翻译：激光装置，激光显示装置，激光照射装置和非线性光学元件
公开(公告)号：US08390920B2
公开(公告)日：2013-03-05
申请号：US12697023
申请日：2010-01-29
申请人： Kaoru Kimura , Akio Furukawa , Michio Oka
发明人： Kaoru Kimura , Akio Furukawa , Michio Oka
IPC分类号： G02F1/37 , G02F1/35
CPC分类号： G02B27/48 , G02B26/123 , G02B27/0031 , G02B27/1006 , G02B27/104 , G02B27/145 , G02F1/3544 , G02F1/37 , G02F2001/3548 , G02F2203/58 , H01S5/0092 , H01S5/141 , H01S5/4087
摘要： A laser device, includes: a fundamental wave generating portion configured to generate a plurality of fundamental waves having wavelengths which are different from each other in at least one set thereof, the fundamental wave generating portion having a semiconductor laser having a plurality of luminous points, and a Bragg reflection structure; and a nonlinear optical element in which a poling structure adapted to pseudophase matching for the wavelengths of the plurality of fundamental waves emitted from the fundamental wave generating portion, respectively, is formed variatively along a propagating direction of the plurality of fundamental waves.
摘要翻译：激光装置包括：基波发生部，其被配置为在至少一个组中产生具有彼此不同的波长的多个基波，所述基波产生部具有具有多个发光点的半导体激光器，和布拉格反射结构; 以及非线性光学元件，其中分别根据多个基波的传播方向可变地形成适合于从基波发生部分发射的多个基波的波长的伪相匹配的极化结构。

17. 发明授权

US07678598B2 Method for manufacturing surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器的制造方法
公开(公告)号：US07678598B2
公开(公告)日：2010-03-16
申请号：US11556595
申请日：2006-11-03
申请人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
发明人： Toshihiko Baba , Atsushi Matsuzono , Akio Furukawa , Satoshi Sasaki , Mitsunari Hoshi
IPC分类号： H01L21/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18316 , H01S5/18319 , H01S5/18327 , H01S2301/02 , H01S2301/166
摘要： A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
摘要翻译：提供了一种制造具有稳定地保持高功率单水平模式的结构的表面发射半导体激光器的方法。在表面发射半导体激光器的主电流路径周围，即在空腔结构部分周围设置由低折射率区域构成的散射损耗结构部分; 低折射率区域间隔地设置; 并且与中心部相对的前端部的形状例如以锐角设定为锥形。因此，在空腔结构部分中，局部在外周部分的高阶模的发光激光器的损耗变大，构成了以良好的性能振荡单模激光器的表面发射半导体激光器。

18. 发明授权

US6017797A Method of fabricating a semiconductor device including complementary MOSFET and power MOSFET 失效
标题翻译：制造包括互补MOSFET和功率MOSFET的半导体器件的方法
公开(公告)号：US6017797A
公开(公告)日：2000-01-25
申请号：US75821
申请日：1998-05-12
申请人： Akio Furukawa
发明人： Akio Furukawa
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/8234
CPC分类号： H01L27/0922 , H01L21/8238 , Y10S148/126
摘要： There is provided a method of fabricating a semiconductor device including, a first conductivity type MOSFET, a second conductivity type MOSFET, and a power MOSFET having a high breakdown voltage, and having a drain offset region formed in the substrate between the drain region and a channel region located below the gate electrode, and containing first conductivity type impurities therein at such a concentration that carriers are depleted in an operation of the semiconductor device, the method including the steps, in sequence, of (a) forming gate electrodes on the substrate in first, second and third regions where the first conductivity type MOSFET, the second conductivity type MOSFET, and the power MOSFET are to be fabricated, respectively, (b) introducing first conductivity type impurities into the substrate at such a concentration that carriers are depleted in an operation of the semiconductor device, (c) introducing first conductivity type impurities into the substrate with both the second region and a region where the drain offset region is to be formed being masked with a photoresist film, and (d) introducing second conductivity type impurities into the substrate with both the first and third regions being masked with a photoresist film. The first conductivity type impurities in the step (b) is lower in concentration than the second conductivity type impurities and the first conductivity type impurities in the step (c). The method makes it possible to form CMOS and a power MOSFET on a common substrate without increasing the number of steps of forming a mask or a photoresist film in comparison with a conventional method of fabricating CMOS.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括第一导电型MOSFET，第二导电型MOSFET和具有高击穿电压的功率MOSFET，并且在漏极区和漏极区之间形成在衬底中的漏极偏移区域沟道区，位于栅电极下方，并且以使载流子在半导体器件的操作中耗尽的浓度含有第一导电型杂质，该方法包括以下步骤：（a）在衬底上形成栅极电极在第一，第二和第三区域分别制造第一导电型MOSFET，第二导电型MOSFET和功率MOSFET，（b）以载流子耗尽的浓度将第一导电类型杂质引入衬底中在半导体器件的操作中，（c）将第一导电类型的杂质引入到具有两者的衬底中 e第二区域和要形成漏极偏移区域的区域被光致抗蚀剂膜掩蔽，以及（d）将第二导电类型的杂质引入基板中，同时第一和第三区域被光致抗蚀剂膜掩蔽。步骤（b）中的第一导电型杂质的浓度低于步骤（c）中的第二导电型杂质和第一导电型杂质。与传统的制造CMOS方法相比，该方法可以在公共衬底上形成CMOS和功率MOSFET而不增加形成掩模或光致抗蚀剂膜的步骤数量。

19. 发明授权

US5854949A Flasher capable of varying a light distribution angle 失效
标题翻译：闪光器能够改变光分布角度
公开(公告)号：US5854949A
公开(公告)日：1998-12-29
申请号：US732710
申请日：1996-10-18
申请人： Akio Furukawa , Toshiaki Nakahira
发明人： Akio Furukawa , Toshiaki Nakahira
IPC分类号： G03B15/05 , G03B15/06
CPC分类号： G03B15/05 , G03B2215/0585
摘要： A stationary reflecting mirror (reflecting umbrella 2) is provided for reflecting light, emitted from a xenon discharge tube (3), to the side of an object to be photographed. An upper reflector plate (5) is provided above and in front of the stationary reflecting umbrella (2) and a lower reflector plate (6) is provided below and in front of the stationary reflecting umbrella (2). The upper and lower deflector plates (5, 6) are constructed so as to be pivoted in interlock with a change in the focal length of a photographic lens. With the upper and lower deflector plates (5, 6), part of light emitted from an opening (2A) is reflected and the direction of the reflected light that is emitted to the object is varied, and thereby the distribution angle of the light emitted to the object is varied. In this way, there is obtainable a flasher which is structurally simple and inexpensive without using high-performance lenses or an accurate moving mechanism.
摘要翻译：设置有固定反射镜（反射伞2），用于将从氙气放电管（3）发射的光反射到要拍摄的物体的一侧。上反光板（5）设置在固定反射伞（2）的上方和前方，下反射板（6）设置在固定反射伞（2）的下方和前方。上部和下部偏转板（5,6）被构造成与摄影镜片的焦距变化互锁地枢转。通过上下偏转板（5,6），从开口（2A）发射的光的一部分被反射，并且发射到物体的反射光的方向变化，从而发射的光的分布角对象是多样的。以这种方式，可以获得一种在不使用高性能透镜或精确移动机构的情况下结构简单且便宜的闪光器。

20. 发明申请

US20130037855A1 SI-GE LAMINATED THIN FILM AND INFRARED SENSOR USING SAME 审中-公开
标题翻译： SI-GE层压薄膜和使用相同的红外传感器
公开(公告)号：US20130037855A1
公开(公告)日：2013-02-14
申请号：US13643223
申请日：2011-03-25
申请人： Shoji Sekino , Shin Nakamura , Tsutomu Yoshitake , Akio Furukawa
发明人： Shoji Sekino , Shin Nakamura , Tsutomu Yoshitake , Akio Furukawa
IPC分类号： B32B7/02 , H01L31/028
CPC分类号： G01J5/20 , B82Y20/00 , C23C14/14 , C23C14/185 , C23C14/5806 , G01J5/04 , G01J5/046 , H01L31/035245 , H01L31/035254 , H01L31/09 , H01L31/1812 , H01L37/00 , Y02E10/50 , Y10T428/2495
摘要： Provided is a Si—Ge laminated thin film including at least one Si layer and at least one Ge layer, which are alternately laminated on a substrate (1). A Si layer (31) and a Ge layer (22) each have a thickness in a range of 5 to 500 nm. The Si layer (31) is amorphous and only the Ge layer (22) is crystallized. An average crystallite size of Ge in the Ge layer (22) is 20 nm or less.
摘要翻译：提供了包括交替层叠在基板（1）上的至少一个Si层和至少一个Ge层的Si-Ge层压薄膜。 Si层（31）和Ge层（22）的厚度分别为5〜500nm的范围。 Si层（31）是非晶体，并且只有Ge层（22）结晶。 Ge层（22）中的Ge的平均微晶尺寸为20nm以下。

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