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11. 发明授权

US07977227B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07977227B2
公开(公告)日：2011-07-12
申请号：US12216679
申请日：2008-07-09
申请人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115
摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
摘要翻译：一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。低字线电阻由存储器件的主栅极上的金属硅化物层形成。在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

12. 发明申请

US20090057748A1 Memory and manufacturing method thereof 有权
标题翻译：其记忆及其制造方法
公开(公告)号：US20090057748A1
公开(公告)日：2009-03-05
申请号：US11892980
申请日：2007-08-29
申请人： Erh-Kun Lai , Hang-Ting Lue , Kuang-Yeu Hsieh
发明人： Erh-Kun Lai , Hang-Ting Lue , Kuang-Yeu Hsieh
IPC分类号： H01L29/788 , H01L21/8239
CPC分类号： H01L29/792 , H01L21/8221 , H01L27/0688 , H01L27/115 , H01L27/11568 , H01L27/11578
摘要： A memory and a manufacturing method thereof are provided. The memory includes a dielectric layer, a polysilicon layer, a first buried diffusion, a second buried diffusion, a charge storage structure and a gate. The polysilicon layer is disposed on the dielectric layer and electrically connected to at least a voltage. The first buried diffusion and the second buried diffusion are separately disposed in the surface of the polysilicon layer. The charge storage structure is disposed on the polysilicon layer and positioned between the first buried diffusion and the second buried diffusion. The gate is disposed on the charge storage structure.
摘要翻译：提供了一种存储器及其制造方法。存储器包括电介质层，多晶硅层，第一掩埋扩散层，第二掩埋扩散层，电荷存储结构和栅极。多晶硅层设置在电介质层上并电连接至少一个电压。第一掩埋扩散部和第二掩埋扩散部分别设置在多晶硅层的表面。电荷存储结构设置在多晶硅层上并且位于第一掩埋扩散区和第二掩埋扩散区之间。栅极设置在电荷存储结构上。

13. 发明授权

US07414282B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07414282B2
公开(公告)日：2008-08-19
申请号：US11203087
申请日：2005-08-15
申请人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L29/76
CPC分类号： H01L27/115 , H01L27/11568
摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
摘要翻译：一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。低字线电阻由存储器件的主栅极上的金属硅化物层形成。在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

14. 发明申请

US20110241100A1 STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：堆叠的非易失性存储器件及其制造方法
公开(公告)号：US20110241100A1
公开(公告)日：2011-10-06
申请号：US13162386
申请日：2011-06-16
申请人： ERH-KUN LAI , Hang-Ting Lue , Kuang-Yeu Hsieh
发明人： ERH-KUN LAI , Hang-Ting Lue , Kuang-Yeu Hsieh
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/115 , H01L27/11568 , H01L27/11578 , H01L27/1203 , H01L29/792
摘要： A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.
摘要翻译：堆叠的非易失性存储器件包括堆叠在彼此顶部的多个位线和字线层。位线层包括多个位线，其可以使用先进的处理技术形成，从而使器件的制造成本高效且成本有效。该器件可以配置为NAND操作。

15. 发明授权

US08022489B2 Air tunnel floating gate memory cell 有权
标题翻译：空中隧道浮动门存储单元
公开(公告)号：US08022489B2
公开(公告)日：2011-09-20
申请号：US11134155
申请日：2005-05-20
申请人： Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L29/788 , H01L27/108 , H01L27/11 , H01L27/112
CPC分类号： H01L27/115 , G11C16/0408 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/515
摘要： An air tunnel floating gate memory cell includes an air tunnel defined over a substrate. A first polysilicon layer (floating gate) is defined over the air tunnel. An oxide layer is disposed over the first polysilicon layer such that the oxide layer caps the first polysilicon layer and defines the sidewalls of the air tunnel. A second polysilicon layer, functioning as a word line, is defined over the oxide layer. A method for making an air tunnel floating gate memory cell is also disclosed. A sacrificial layer is formed over a substrate. A first polysilicon layer is formed over the sacrificial layer. An oxide layer is deposited over the first polysilicon layer such that the oxide layer caps the first polysilicon layer and defines the sidewalls of the sacrificial layer. A hot phosphoric acid (H3PO4) dip is used to etch away the sacrificial layer to form an air tunnel.
摘要翻译：空气隧道浮动栅极存储单元包括限定在衬底上的空气通道。在空气隧道上定义第一多晶硅层（浮栅）。氧化物层设置在第一多晶硅层上，使得氧化物层覆盖第一多晶硅层并限定空气通道的侧壁。用作字线的第二多晶硅层被定义在氧化物层上。还公开了一种制造空气通道浮动栅极存储单元的方法。在衬底上形成牺牲层。在牺牲层上形成第一多晶硅层。在第一多晶硅层上沉积氧化物层，使得氧化物层覆盖第一多晶硅层并限定牺牲层的侧壁。使用热磷酸（H 3 PO 4）浸渍来蚀刻掉牺牲层以形成空气通道。

16. 发明授权

US07709334B2 Stacked non-volatile memory device and methods for fabricating the same 有权
标题翻译：堆叠的非易失性存储器件及其制造方法
公开(公告)号：US07709334B2
公开(公告)日：2010-05-04
申请号：US11425959
申请日：2006-06-22
申请人： Erh-Kun Lai , Hang-Ting Lue , Kuang-Yeu Hsieh
发明人： Erh-Kun Lai , Hang-Ting Lue , Kuang-Yeu Hsieh
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/115 , H01L27/11568 , H01L27/11578 , H01L27/1203 , H01L29/792
摘要： A stacked non-volatile memory device comprises a plurality of bit line and word line layers stacked on top of each other. The bit line layers comprise a plurality of bit lines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.
摘要翻译：堆叠的非易失性存储器件包括堆叠在彼此顶部的多个位线和字线层。位线层包括多个位线，其可以使用先进的处理技术形成，从而使器件的制造成本高效且成本有效。该器件可以配置为NAND操作。

17. 发明申请

US20090075466A1 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20090075466A1
公开(公告)日：2009-03-19
申请号：US12216679
申请日：2008-07-09
申请人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L21/3205
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115
摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
摘要翻译：一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。低字线电阻由存储器件的主栅极上的金属硅化物层形成。在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

18. 发明申请

US20060261402A1 Air tunnel floating gate memory cell and method for making the same 有权
标题翻译：空气隧道浮栅存储单元及其制作方法
公开(公告)号：US20060261402A1
公开(公告)日：2006-11-23
申请号：US11134155
申请日：2005-05-20
申请人： Hang-Ting Lue , Erh-Kun Lai , Kuang-Yeu Hsieh
发明人： Hang-Ting Lue , Erh-Kun Lai , Kuang-Yeu Hsieh
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L27/115 , G11C16/0408 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/515
摘要： An air tunnel floating gate memory cell includes an air tunnel defined over a substrate. A first polysilicon layer (floating gate) is defined over the air tunnel. An oxide layer is disposed over the first polysilicon layer such that the oxide layer caps the first polysilicon layer and defines the sidewalls of the air tunnel. A second polysilicon layer, functioning as a word line, is defined over the oxide layer. A method for making an air tunnel floating gate memory cell is also disclosed. A sacrificial layer is formed over a substrate. A first polysilicon layer is formed over the sacrificial layer. An oxide layer is deposited over the first polysilicon layer such that the oxide layer caps the first polysilicon layer and defines the sidewalls of the sacrificial layer. A hot phosphoric acid (H3PO4) dip is used to etch away the sacrificial layer to form an air tunnel.
摘要翻译：空气隧道浮动栅极存储单元包括限定在衬底上的空气通道。在空气隧道上定义第一多晶硅层（浮栅）。氧化物层设置在第一多晶硅层上，使得氧化物层覆盖第一多晶硅层并限定空气通道的侧壁。用作字线的第二多晶硅层被定义在氧化物层上。还公开了一种制造空气通道浮动栅极存储单元的方法。在衬底上形成牺牲层。在牺牲层上形成第一多晶硅层。在第一多晶硅层上沉积氧化物层，使得氧化物层覆盖第一多晶硅层并限定牺牲层的侧壁。使用热磷酸（H 3 PO 4）浸渍以蚀刻掉牺牲层以形成空气通道。

19. 发明授权

US07560762B2 Asymmetric floating gate NAND flash memory 有权
标题翻译：非对称浮栅NAND闪存
公开(公告)号：US07560762B2
公开(公告)日：2009-07-14
申请号：US11209437
申请日：2005-08-23
申请人： Yen-Hao Shih , Chia-Hua Ho , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Yen-Hao Shih , Chia-Hua Ho , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L29/80
CPC分类号： H01L27/115 , G11C16/0483 , H01L27/11521
摘要： A NAND-type flash memory device includes asymmetric floating gates overlying respective wordlines. A given floating gate is sufficiently coupled to its respective wordline such that a large gate (i.e., wordline) bias voltage will couple the floating gate with a voltage which can invert the channel under the floating gate. The inversion channel under the floating gate can thus serve as the source/drain. As a result, the memory device does not need a shallow junction, or an assist-gate. In addition, the memory device exhibits relatively low floating gate-to-floating gate (FG-FG) interference.
摘要翻译： NAND型闪存器件包括覆盖相应字线的非对称浮动栅极。给定的浮动栅极被充分地耦合到其相应的字线，使得大的栅极（即，字线）偏置电压将使浮动栅极与可以反转浮动栅极下方的沟道的电压耦合。因此，浮置栅极下的反相通道可以作为源极/漏极。结果，存储器件不需要浅结或辅助栅。此外，存储器件具有相对较低的浮置栅极至浮置栅极（FG-FG）干扰。

20. 发明申请

US20070134876A1 Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same 有权
标题翻译：叠层薄膜晶体管，非易失性存储器件及其制造方法
公开(公告)号：US20070134876A1
公开(公告)日：2007-06-14
申请号：US11549520
申请日：2006-10-13
申请人： Erh Kun Lai , Hang-Ting Lue , Kuang Yeu Hsieh
发明人： Erh Kun Lai , Hang-Ting Lue , Kuang Yeu Hsieh
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L21/28282 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/115 , H01L27/11578 , H01L27/1203 , H01L29/4234
摘要： A stacked non-volatile memory device comprises a plurality of bitline and wordline layers stacked on top of each other. The bitline layers comprise a plurality of bitlines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation.
摘要翻译：堆叠的非易失性存储器件包括堆叠在彼此顶部的多个位线和字线层。位线层包括可以使用先进的处理技术形成的多个位线，从而使设备的制造成本高效且成本有效。该器件可以配置为NAND操作。

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