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    • 13. 发明授权
    • Image reading apparatus
    • 图像读取装置
    • US08854700B2
    • 2014-10-07
    • US13369035
    • 2012-02-08
    • Keisuke Kimura
    • Keisuke Kimura
    • H04N1/04
    • H04N1/0282G03B15/03G03B17/561H04N1/10H04N1/193H04N5/2256H04N5/2259H04N2201/0436
    • An image reading apparatus includes a main body, a rotation unit supported on the main body so as to be rotatable around a rotation axis, an imaging unit that is mounted on the rotation unit at an outward position in a radial direction of the rotation axis and images a medium to be read that is placed on a placement surface located under the rotation unit in the vertical direction, and a light source that irradiates the medium to be read with light. The light source and the imaging unit can be arranged with a relative positional relationship capable of suppressing specular reflected light of light that is emitted from the light source and reflected by the medium to be read from being incident on the imaging unit.
    • 一种图像读取装置,包括主体,旋转单元,其以旋转轴为中心可旋转地支撑在主体上,成像单元,其安装在旋转单元的旋转轴的径向外侧位置, 将被放置在位于旋转单元下方的放置表面的待读取介质沿垂直方向成像,以及用光照射要读取的介质的光源。 光源和成像单元可以布置成能够抑制从光源发射并被要读取的介质反射的光的镜面反射光入射在成像单元上的相对位置关系。
    • 17. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09153575B2
    • 2015-10-06
    • US14373992
    • 2013-01-23
    • Keisuke KimuraSatoru KameyamaMasaki KoyamaSachiko Aoi
    • Keisuke KimuraSatoru KameyamaMasaki KoyamaSachiko Aoi
    • H01L29/66H01L27/06H01L29/739H01L29/08H01L29/40H01L29/861H01L29/06
    • H01L27/0664H01L29/0646H01L29/0834H01L29/407H01L29/7395H01L29/7397H01L29/861
    • When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.
    • 当从上方观察半导体器件的半导体衬底时,隔离区域,IGBT区域和二极管区域都彼此相邻地形成。 在隔离区域中形成连接到体区和阳极区的深区。 在半导体衬底内部跨越隔离区域,IGBT区域和二极管区域形成漂移区域。 在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域,IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。 在二极管区域中,集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面,并且分隔隔离区域和二极管区域。 形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。