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11. 发明授权

US5306663A Method of wiring semiconductor device using energy beam 失效
标题翻译：使用能量束布线半导体器件的方法
公开(公告)号：US5306663A
公开(公告)日：1994-04-26
申请号：US873845
申请日：1992-04-27
申请人： Hiroaki Morimoto
发明人： Hiroaki Morimoto
IPC分类号： H01L21/3205 , B23K15/00 , B23K15/02 , H01J37/305 , H01J37/317 , H01L21/285
CPC分类号： H01J37/3178 , B23K15/0013 , B23K15/004 , B23K15/02 , H01J37/3056 , H01J2237/31737
摘要： A method of wiring a semiconductor device which allows a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus formed thereby includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. A wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beram column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.
摘要翻译：一种半导体器件布线方法，其能够简化制造步骤，而不会降低空中布线的绝缘特性。由此形成的半导体器件布线装置包括设置在基板50上方的第一梁柱1a和水平设置的第二梁柱1b。通过使用第一光束柱1a形成向上形成的天线的布线部分，并且通过使用第二光束柱形成水平地形成到基板50的布线层的布线部分，这导致不存在绝缘为了简化制造步骤，需要用于空中布线的薄膜。

12. 发明授权

US5043290A Process for forming electrodes for semiconductor devices by focused ion beam technology 失效
标题翻译：通过聚焦离子束技术形成半导体器件电极的工艺
公开(公告)号：US5043290A
公开(公告)日：1991-08-27
申请号：US338274
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

13. 发明授权

US4952421A Method for repairing a pattern 失效
标题翻译：修复图案的方法
公开(公告)号：US4952421A
公开(公告)日：1990-08-28
申请号：US269756
申请日：1988-11-08
申请人： Hiroaki Morimoto , Hiroshi Onoda , Tadashi Nishioka
发明人： Hiroaki Morimoto , Hiroshi Onoda , Tadashi Nishioka
IPC分类号： G03F1/00 , G03F1/72 , G03F1/74 , H01L21/027 , H01L21/768
CPC分类号： G03F1/74 , H01L21/76892
摘要： The method for repairing the pattern is to repair the lacking portion of the pattern included in the X-ray exposure mask with the WF.sub.6 gas being filled in the vicinity thereof, wherein the focused ion beam irradiates the defect portion, whereby the WF.sub.6 gas is decomposed to form a tungsten thin film so as to at least fill the lacking portion. On this occasion, the focused ion beam is successively applied so that it is always in contact with the edge of the tungsten thin film constituting the pattern.
摘要翻译：用于修复图案的方法是修补包含在X射线曝光掩模中的图案的缺少部分，其中WF6气体被填充在其附近，其中聚焦离子束照射缺陷部分，由此WF6气体被分解以形成钨薄膜，以便至少填充缺少部分。在这种情况下，聚焦离子束被连续地施加，使得其总是与构成图案的钨薄膜的边缘接触。

14. 发明授权

US4948749A Process for forming electrodes for semiconductor devices 失效
标题翻译：用于形成用于半导体器件的电极的工艺
公开(公告)号：US4948749A
公开(公告)日：1990-08-14
申请号：US338236
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/76877 , Y10S148/05
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
摘要翻译：一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。该方法包括以下步骤：在电绝缘涂层上形成导电膜，在电绝缘涂层的一部分暴露在导电部分上方的位置，形成与导电膜上的外部电路连接的电极，将第一导电膜连接到会聚离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

15. 发明授权

US4853341A Process for forming electrodes for semiconductor devices using focused ion beams 失效
标题翻译：使用聚焦离子束形成用于半导体器件的电极的工艺
公开(公告)号：US4853341A
公开(公告)日：1989-08-01
申请号：US118031
申请日：1987-11-09
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.
摘要翻译：一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。该方法包括以下步骤：在电绝缘涂层上形成导电膜，通过暴露电绝缘涂层的部分和形成在导电膜上方的与外部电路连接的电极，覆盖导电部分第一导电膜到会聚的离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

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