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11. 发明授权

US6127070A Thin resist with nitride hard mask for via etch application 有权
标题翻译：具有用于通孔蚀刻应用的氮化物硬掩模的薄抗蚀剂
公开(公告)号：US6127070A
公开(公告)日：2000-10-03
申请号：US203283
申请日：1998-12-01
申请人： Chih Yuh Yang , Christopher F. Lyons , Harry J. Levinson , Khanh B. Nguyen , Fei Wang , Scott A. Bell
发明人： Chih Yuh Yang , Christopher F. Lyons , Harry J. Levinson , Khanh B. Nguyen , Fei Wang , Scott A. Bell
IPC分类号： H01L21/027 , H01L21/311 , H01L21/768 , H01L23/522 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/0274 , H01L21/76816 , H01L23/5226 , H01L2924/0002
摘要： A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a nitride layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the nitride layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the nitride layer. The first etch step includes an etch chemistry that is selective to the nitride layer over the ultra-thin photoresist layer and the dielectric layer. The nitride layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.
摘要翻译：提供一种形成通孔结构的方法。在该方法中，在覆盖第一金属层的抗反射涂层（ARC）层上形成电介质层; 并且在电介质层上形成氮化物层。在氮化物层上形成超薄光致抗蚀剂层，并用短波长辐射对超薄光致抗蚀剂层进行图案化，以形成通孔图案。在第一蚀刻步骤期间，将图案化超薄光致抗蚀剂层用作掩模，以将通孔图案转移到氮化物层。第一蚀刻步骤包括对超薄光致抗蚀剂层和电介质层上的氮化物层有选择性的蚀刻化学品。在第二蚀刻步骤期间，氮化物层用作硬掩模，以通过蚀刻介电层的部分来形成与通孔图案相对应的接触孔。

12. 发明授权

US06440640B1 Thin resist with transition metal hard mask for via etch application 有权
标题翻译：具有过渡金属硬掩模的薄抗蚀剂，用于通孔蚀刻应用
公开(公告)号：US06440640B1
公开(公告)日：2002-08-27
申请号：US09703092
申请日：2000-10-31
申请人： Chih Yuh Yang , Christopher F. Lyons , Harry J. Levinson , Khanh B. Nguyen , Fei Wang , Scott A. Bell
发明人： Chih Yuh Yang , Christopher F. Lyons , Harry J. Levinson , Khanh B. Nguyen , Fei Wang , Scott A. Bell
IPC分类号： G03C500
CPC分类号： H01L21/76816 , H01L21/0276 , H01L21/0332 , H01L21/0338 , H01L21/32139
摘要： A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a transition metal layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the transition metal layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the transition metal layer. The first etch step includes an etch chemistry that is selective to the transition metal layer over the ultra-thin photoresist layer and the dielectric layer. The transition metal layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.
摘要翻译：提供一种形成通孔结构的方法。在该方法中，在覆盖第一金属层的抗反射涂层（ARC）层上形成电介质层; 并且在介电层上形成过渡金属层。在过渡金属层上形成超薄光致抗蚀剂层，并用短波长辐射对超薄光致抗蚀剂层进行构图，以形成通孔图案。在第一蚀刻步骤期间，将图案化超薄光致抗蚀剂层用作掩模，以将通孔图案转印到过渡金属层。第一蚀刻步骤包括对超薄光致抗蚀剂层和电介质层上的过渡金属层有选择性的蚀刻化学品。在第二蚀刻步骤期间，过渡金属层用作硬掩模，以通过蚀刻介电层的部分形成与通孔图案相对应的接触孔。

13. 发明授权

US06200907B1 Ultra-thin resist and barrier metal/oxide hard mask for metal etch 有权
标题翻译：用于金属蚀刻的超薄抗蚀剂和阻挡金属/氧化物硬掩模
公开(公告)号：US06200907B1
公开(公告)日：2001-03-13
申请号：US09204216
申请日：1998-12-02
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , H01L21/0275 , H01L21/0332 , H01L21/31111 , H01L21/31116 , H01L21/76838
摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a barrier metal layer over the oxide layer; depositing an ultra-thin photoresist over the barrier metal layer, the ultra-thin photoresist having a thickness less than about 2,000 Å; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the barrier metal layer; etching the exposed portion of the barrier metal layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
摘要翻译：在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包括金属层的半导体衬底，金属层上的氧化物层和氧化物层上的阻挡金属层; 在阻挡金属层上沉积超薄光致抗蚀剂，超薄光致抗蚀剂具有小于约的厚度; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露一部分阻挡金属层的超薄光刻胶; 蚀刻暴露部分氧化物层的阻挡金属层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。

14. 发明授权

US06184128B2 Method using a thin resist mask for dual damascene stop layer etch 有权
标题翻译：使用薄抗蚀剂掩模的双镶嵌停止层蚀刻方法
公开(公告)号：US06184128B2
公开(公告)日：2001-02-06
申请号：US09497222
申请日：2000-01-31
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： H01L214763
CPC分类号： H01L21/7681 , H01L21/31144
摘要： In one embodiment, the present invention relates to a dual damascene method involving the steps of providing a substrate having a first low k material layer; forming a first hard mask layer over the first low k material layer; patterning a first opening having a first width in the first hard mask layer using a first photoresist thereby exposing a portion of the first low k material layer; removing the first photoresist; depositing a second low k material layer over the patterned first hard mask layer and the exposed portion of the first low k material layer; forming a second hard mask layer over the second low k material layer; patterning a second opening having a width larger than the first width in the second hard mask layer using a second photoresist thereby exposing a portion of the second low k material layer; anisotropically etching the exposed portions of the first and second low k material layers; and removing the second photoresist, wherein and at least one of the first photoresist and the second photoresist have a thickness of about 1,500 Å or less.
摘要翻译：在一个实施例中，本发明涉及一种双镶嵌方法，包括以下步骤：提供具有第一低k材料层的基底; 在所述第一低k材料层上形成第一硬掩模层; 使用第一光致抗蚀剂构图在第一硬掩模层中具有第一宽度的第一开口，从而暴露第一低k材料层的一部分; 去除第一光致抗蚀剂; 在图案化的第一硬掩模层和第一低k材料层的暴露部分上沉积第二低k材料层; 在所述第二低k材料层上形成第二硬掩模层; 使用第二光致抗蚀剂构图在第二硬掩模层中形成具有大于第一宽度的宽度的第二开口，从而暴露第二低k材料层的一部分; 各向异性地蚀刻第一和第二低k材料层的暴露部分; 并且去除所述第二光致抗蚀剂，其中所述第一光致抗蚀剂和所述第二光致抗蚀剂中的至少一个具有大约等于或小于1500埃的厚度。

15. 发明授权

US06057206A Mark protection scheme with no masking 有权
标题翻译：标记保护方案，无掩蔽
公开(公告)号：US06057206A
公开(公告)日：2000-05-02
申请号：US410526
申请日：1999-10-01
申请人： Khanh B. Nguyen , Marina Plat , Christopher F. Lyons , Harry J. Levinson
发明人： Khanh B. Nguyen , Marina Plat , Christopher F. Lyons , Harry J. Levinson
IPC分类号： H01L23/544 , H01L21/76
CPC分类号： H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002
摘要： A method of forming an alignment mark protection structure is disclosed and includes forming an alignment mark protection layer over a substrate which has an alignment mark associated therewith. The method also includes forming a negative photoresist layer over the alignment mark protection layer and removing a portion of the negative photoresist layer which does not overlie the alignment mark. The removal exposes a portion of the alignment mark protection layer which does not overlie the alignment mark and the exposed portion of the alignment mark protection layer is then removed. Preferably, the removal of a portion of the negative photoresist includes selectively exposing a peripheral portion thereof using an edge-bead removal tool, thereby allowing for the formation of an alignment mark protection structure without an extra masking step.
摘要翻译：公开了一种形成对准标记保护结构的方法，并且包括在具有与其相关联的对准标记的衬底上形成对准标记保护层。该方法还包括在对准标记保护层上形成负光致抗蚀剂层，并且去除不覆盖对准标记的负光致抗蚀剂层的一部分。去除暴露出不覆盖对准标记的对准标记保护层的一部分，然后去除对准标记保护层的暴露部分。优选地，去除负光致抗蚀剂的一部分包括使用边缘珠去除工具选择性地暴露其周边部分，从而允许形成对准标记保护结构而没有额外的掩模步骤。

16. 发明授权

US6098408A System for controlling reflection reticle temperature in microlithography 有权
标题翻译：微光刻反射标线温度系统
公开(公告)号：US6098408A
公开(公告)日：2000-08-08
申请号：US189228
申请日：1998-11-11
申请人： Harry J. Levinson , Khanh B. Nguyen
发明人： Harry J. Levinson , Khanh B. Nguyen
IPC分类号： F25B21/02 , G03F7/20 , G05D23/19
CPC分类号： G03F7/707 , F25B21/02 , G03F7/70283 , G03F7/70875 , G05D23/1919 , G05D23/1934 , G05D23/24 , Y02B30/765
摘要： A system for regulating reticle temperature is provided. The system includes a reticle for use in a lithographic process and a chuck assembly for supporting the reticle. The chuck assembly includes: a backplate having front and back surfaces, the front surface engaging with a backside of the reticle; and a thermoelectric cooling system operatively coupled to the backplate for regulating temperature of at least a portion of the reticle via heat conduction through the backplate. The chuck assembly also includes a temperature sensing system coupled to the backplate for sensing temperature of at least a portion of the reticle via heat conduction through the backplate; and a heat sink operatively coupled to the thermoelectric cooling system. A voltage driver operatively is coupled to the thermoelectric cooling system, the voltage driver provides a bias voltage to drive the thermoelectric cooling system. A processor is operatively coupled to the voltage driver, the processor employing the voltage driver in controlling the thermoelectric cooling system.
摘要翻译：提供了一种用于调节掩模版温度的系统。该系统包括用于光刻工艺的掩模版和用于支撑掩模版的卡盘组件。卡盘组件包括：背板，其具有前表面和后表面，前表面与掩模版的背面接合; 以及可操作地耦合到所述背板的热电冷却系统，用于通过所述背板的热传导来调节所述掩模版的至少一部分的温度。卡盘组件还包括耦合到背板的温度感测系统，用于通过背板的热传导来感测至少一部分光罩的温度; 以及可操作地耦合到热电冷却系统的散热器。电压驱动器可操作地耦合到热电冷却系统，电压驱动器提供偏置电压来驱动热电冷却系统。处理器可操作地耦合到电压驱动器，处理器采用电压驱动器来控制热电冷却系统。

17. 发明授权

US06593035B1 Pellicle for use in small wavelength lithography and a method for making such a pellicle using polymer films 有权
标题翻译：用于小波长光刻的防护薄膜和使用聚合物膜制造这种防护薄膜的方法
公开(公告)号：US06593035B1
公开(公告)日：2003-07-15
申请号：US09771236
申请日：2001-01-26
申请人： Harry J. Levinson , Christopher F. Lyons
发明人： Harry J. Levinson , Christopher F. Lyons
IPC分类号： G03F900
CPC分类号： G03F1/62
摘要： A pellicle utilizes a thin film attached to a frame. The film is relatively transparent to radiation. The frame is coupled to a periphery of the film and is exclusive of the center portion of the film. The pellicle can be manufactured by growing a relatively transparent film on a silicon substrate and removing the substrate to expose at least a portion of the relatively transparent film.
摘要翻译：防护薄膜组件利用连接到框架的薄膜。这部电影对辐射来说比较透明。框架耦合到胶片的周边，并且不包括胶片的中心部分。可以通过在硅衬底上生长相对透明的膜并除去衬底以暴露至少一部分相对透明的膜来制造防护薄膜组件。

18. 发明授权

US06623893B1 Pellicle for use in EUV lithography and a method of making such a pellicle 有权
标题翻译：用于EUV光刻的防护薄膜和制造这种防护薄膜的方法
公开(公告)号：US06623893B1
公开(公告)日：2003-09-23
申请号：US09770730
申请日：2001-01-26
申请人： Harry J. Levinson , Christopher F. Lyons
发明人： Harry J. Levinson , Christopher F. Lyons
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/62
摘要： A pellicle utilizes a film attached to a barrier layer above a substrate. The film is relatively transparent to radiation in the EUV range. The substrate and barrier layer are coupled to a periphery of the film and is exclusive of the center portion of the film. The pellicle can be manufactured by growing a relatively transparent film on a barrier layer that is grown on a substrate. The substrate and barrier layer are etched to expose a portion of the relatively transparent film.
摘要翻译：防护薄膜组件利用附着在衬底上方的阻挡层的膜。该电影对EUV范围内的辐射相对透明。衬底和阻挡层耦合到膜的周边，并且不包括膜的中心部分。可以通过在衬底上生长的阻挡层上生长相对透明的膜来制造防护薄膜组件。蚀刻衬底和阻挡层以暴露一部分相对透明的膜。

19. 发明授权

US06544693B2 Pellicle for use in small wavelength lithography and a method for making such a pellicle 有权
公开(公告)号：US06544693B2
公开(公告)日：2003-04-08
申请号：US09770733
申请日：2001-01-26
申请人： Harry J. Levinson , Christopher F. Lyons
发明人： Harry J. Levinson , Christopher F. Lyons
IPC分类号： G03F900
CPC分类号： G03F1/62
摘要： A pellicle utilizes a thin film attached to a substrate. The film is relatively transparent to radiation. The substrate is coupled to a periphery of the film and is exclusive of the center portion of the film. The pellicle can be manufactured by growing a relatively transparent film on a substrate and etching the substrate to expose a portion of the relatively transparent film.

20. 发明授权

US08809184B2 Methods of forming contacts for semiconductor devices using a local interconnect processing scheme 有权
标题翻译：使用局部互连处理方案形成用于半导体器件的触点的方法
公开(公告)号：US08809184B2
公开(公告)日：2014-08-19
申请号：US13465633
申请日：2012-05-07
申请人： Lei Yuan , Jin Cho , Jongwook Kye , Harry J. Levinson
发明人： Lei Yuan , Jin Cho , Jongwook Kye , Harry J. Levinson
IPC分类号： H01L21/762 , H01L21/768 , H01L21/8238 , H01L21/441 , H01L23/535
CPC分类号： H01L21/823475 , H01L21/76895 , H01L23/485 , H01L27/0207 , H01L2924/0002 , H01L2924/00
摘要： One method disclosed herein includes forming a plurality of source/drain contacts that are conductively coupled to a source/drain region of a plurality of transistor devices, wherein at least one of the source/drain contacts is a local interconnect structure that spans the isolation region and is conductively coupled to a first source/drain region in a first active region and to a second source/drain region in a second active region, and forming a patterned mask layer that covers the first and second active regions and exposes at least a portion of the local interconnect structure positioned above an isolation region that separates the first and second active regions. The method further includes performing an etching process through the patterned mask layer to remove a portion of the local interconnect structure, thereby defining a recess positioned above a remaining portion of the local interconnect structure, and forming an insulating material in the recess.
摘要翻译：本文公开的一种方法包括形成导电耦合到多个晶体管器件的源极/漏极区域的多个源极/漏极接触，其中源极/漏极接触中的至少一个是跨越隔离区域的局部互连结构并且导电地耦合到第一有源区域中的第一源极/漏极区域和第二有源区域中的第二源极/漏极区域，并且形成覆盖第一和第二有源区域并且暴露至少一部分的图案化掩模层的局部互连结构位于分离第一和第二有源区域的隔离区域之上。该方法还包括通过图案化掩模层执行蚀刻工艺以移除局部互连结构的一部分，从而限定位于局部互连结构的剩余部分上方的凹槽，以及在凹部中形成绝缘材料。

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