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11. 发明授权

US08525156B2 Organic thin film transistor having an amorphous channel control layer with specified inozation potential 有权
标题翻译：有机薄膜晶体管，具有具有特定掺杂电位的无定形沟道控制层
公开(公告)号：US08525156B2
公开(公告)日：2013-09-03
申请号：US12679634
申请日：2008-09-09
申请人： Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
发明人： Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
IPC分类号： H01L51/30
CPC分类号： B82Y10/00 , C08G2261/124 , C08G2261/222 , C08G2261/226 , C08G2261/314 , C08G2261/3162 , C08G2261/76 , C08G2261/92 , H01L51/0003 , H01L51/0012 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/006 , H01L51/0541 , H01L51/0545 , H01L51/0562 , H01L51/5296 , H01L2251/552
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流被控制在施加电压到栅电极，其中在有机半导体层和绝缘体层之间设置包含电离电位小于5.8eV的非晶有机化合物的沟道控制层，具有优异的场效应迁移率和高响应性的稳定性即使在高温下储存时也是如此。

12. 发明申请

US20130102982A1 ABSORBENT PRODUCT 有权
标题翻译：吸收产品
公开(公告)号：US20130102982A1
公开(公告)日：2013-04-25
申请号：US13807518
申请日：2011-06-29
申请人： Yuki Nakano , Asami Kobori
发明人： Yuki Nakano , Asami Kobori
IPC分类号： A61F13/49 , A61F13/515
CPC分类号： A61F13/49017 , A61F13/49001 , A61F13/49019 , A61F13/515
摘要： Provided is an underpants-type disposable diaper that is improved in a fit to a part from the intergluteal cleft to the crotch of a wearer and less prone to give a wearer a puffy and discomfort feeling at a crotch portion during wearing.In order to solve the above problem, provided is an underpants-type disposable diaper, wherein the back body part B has at an intergluteal cleft facing portion a bending fit portion 40 which is bent so as to enter into the intergluteal cleft of a wearer, the outer sheet 20 has at each of the front and back body parts F, B a lifting elastic member 26 - - - , 28 - - - which exerts a contraction force of a vertical component to lift a crotch portion toward a waist side, and a tensile stress on the front body part F undergoing vertical elastic deformation is larger than a tensile stress on the back body part B undergoing vertical elastic deformation.
摘要翻译：本发明提供一种内裤型一次性尿布，其与从穿着者的臀沟到裆部的部位配合得到改善，并且在穿着期间不太容易使穿着者在裆部发生浮肿和不适感。为了解决上述问题，提供了一种内裤型一次性尿布，其中后身部分B在臀间裂缝面对部分处具有弯曲配合部分40，弯曲配合部分40弯曲以进入穿戴者的臀间裂缝，外片20具有在前身体部和后身部分F，B中的每一个上施加垂直部分的收缩力以将裆部部分向腰侧提升的提升弹性部件26 - - ，28 - 经历垂直弹性变形的前身部分F上的拉伸应力大于经受垂直弹性变形的后身部分B上的拉伸应力。

13. 发明授权

US08283721B2 Semiconductor device, and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08283721B2
公开(公告)日：2012-10-09
申请号：US12934012
申请日：2009-03-26
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/0465 , H01L29/0623 , H01L29/063 , H01L29/1095 , H01L29/1608 , H01L29/36 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7827
摘要： A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).
摘要翻译：半导体器件（A1）包括具有形成在其上的沟槽（3）的第一面和与第一面相反的第二面的半导体层，栅极（41）和栅极绝缘层（5）。半导体层包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13）和n型半导体区域（14）。沟槽（3）形成为穿过p型半导体层（13）并到达第二n型半导体层（12）。 p型半导体层（13）包括延伸到比沟槽（3）更靠近半导体层的第二面的位置的延伸部分。这种结构允许抑制栅绝缘层（5）中的电介质击穿。

14. 发明授权

US08188538B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08188538B2
公开(公告)日：2012-05-29
申请号：US12654620
申请日：2009-12-24
申请人： Yuki Nakano , Ryota Nakamura
发明人： Yuki Nakano , Ryota Nakamura
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/046 , H01L21/0485 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/7803 , H01L29/7805
摘要： The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.
摘要翻译：根据本发明的半导体器件包括：由具有Si表面的SiC制成的第一导电类型的半导体层; 从半导体层的表面向下挖的栅极沟槽; 栅极绝缘膜，形成在栅极沟槽的底表面和侧表面上，使得位于底表面的部分的厚度与位于侧表面的部分的厚度之比为0.3至1.0; 以及通过栅极绝缘膜嵌入栅极沟槽中的栅电极。

15. 发明申请

US20120049202A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120049202A1
公开(公告)日：2012-03-01
申请号：US13259344
申请日：2010-04-05
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/161 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0696 , H01L29/1608 , H01L29/42368 , H01L29/45 , H01L29/66068
摘要： The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer with a bottom surface formed on a portion of the semiconductor layer under the body region, source regions of the first conductivity type formed on a surface layer portion of the body region adjacently to side surfaces of the gate trench, a gate insulating film formed on the bottom surface and the side surfaces of the gate trench so that the thickness of a portion on the bottom surface is greater than the thickness of portions on the side surfaces, a gate electrode embedded in the gate trench through the gate insulating film, and an implantation layer formed on a portion of the semiconductor layer extending from the bottom surface of the gate trench to an intermediate portion of the semiconductor layer in the thickness direction by implantation of a second conductivity type impurity.
摘要翻译：根据本发明的半导体器件包括由SiC制成的第一导电类型的半导体层，形成在半导体层的表面层部分上的第二导电类型的体区，从半导体层，其具有形成在所述体区域的所述半导体层的一部分上的底面，所述第一导电型的源极区域形成在所述主体区域的与所述栅极沟槽的侧面相邻的表面层部分上，形成栅极绝缘膜在栅极沟槽的底表面和侧表面上，使得底表面上的部分的厚度大于侧表面上的部分的厚度，通过栅极绝缘膜嵌入栅极沟槽中的栅电极，以及所述注入层形成在所述半导体层的从所述栅极沟槽的底表面延伸到所述半导体的中间部分的部分上通过注入第二导电型杂质在厚度方向上的导体层。

16. 发明申请

US20100283041A1 ORGANIC THIN FILM TRANSISTOR 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20100283041A1
公开(公告)日：2010-11-11
申请号：US12679634
申请日：2008-09-09
申请人： Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
发明人： Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
IPC分类号： H01L51/30
CPC分类号： B82Y10/00 , C08G2261/124 , C08G2261/222 , C08G2261/226 , C08G2261/314 , C08G2261/3162 , C08G2261/76 , C08G2261/92 , H01L51/0003 , H01L51/0012 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/006 , H01L51/0541 , H01L51/0545 , H01L51/0562 , H01L51/5296 , H01L2251/552
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流被控制在施加电压到栅电极，其中在有机半导体层和绝缘体层之间设置包含电离电位小于5.8eV的非晶有机化合物的沟道控制层，具有优异的场效应迁移率和高响应性的稳定性即使在高温下储存时也是如此。

17. 发明申请

US20100243993A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 审中-公开
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20100243993A1
公开(公告)日：2010-09-30
申请号：US12514958
申请日：2007-11-13
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/30
CPC分类号： H01L51/0067 , H01L51/0058 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/057 , H01L51/5296
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

18. 发明申请

US20100019234A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT EMITTING TRANSISTOR 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20100019234A1
公开(公告)日：2010-01-28
申请号：US12517462
申请日：2007-11-28
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/30
CPC分类号： H01L51/0094 , H01L51/0022 , H01L51/005 , H01L51/0058 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105 , H01L51/5012 , H01L51/52 , H01L51/5203 , H01L51/5296
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

19. 发明申请

US20090256145A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20090256145A1
公开(公告)日：2009-10-15
申请号：US12514866
申请日：2007-11-13
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/10
CPC分类号： H01L51/5296 , H01L51/0022 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0058 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having a divalent aromatic hydrocarbon group having a phenanthrene structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中所述有机半导体层包含其中心具有菲结构的二价芳族烃基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

20. 发明申请

US20090017645A1 CONNECTOR 有权
标题翻译：连接器
公开(公告)号：US20090017645A1
公开(公告)日：2009-01-15
申请号：US12168047
申请日：2008-07-03
申请人： Masayuki Suzuki , Yuki Nakano
发明人： Masayuki Suzuki , Yuki Nakano
IPC分类号： H01R12/28
CPC分类号： H01R12/88 , H01R12/57 , H01R12/79 , H01R12/82
摘要： A first contact and a second contact are inserted into one and the same inserting hole of a housing so that contact portions of the first and second contacts are facing to each other. The first contacts each include the contact portion at one end and a connection portion at the other end. The second contacts each includes a first piece having the contact portion at one end and a pressure receiving portion at the other end, a second piece having connection portion at an outer end, and an elastic jointing-portion for jointing the first piece and the remaining end of the second piece. A pivoting member includes an actuating portion, pushing portions, and anchoring holes. The pushing portions are pivotally moved between the pressure receiving portions and the connection portions of the second contacts, during which pivotal movement, the axis of rotation of the pushing portions is moved with their pivotal movement to achieve their compact rotation. The second contacts are each provided on the second piece with a fixing portion in the proximity of the elastic jointing-portion. The connector constructed as above described prevents the contacts from being warped or deformed when the pivoting member is being pivotally moved, and achieves a stable electrical connection, a reduced overall height of the connector and a high density of the conductors.
摘要翻译：将第一接触件和第二接触件插入到壳体的同一插入孔中，使得第一和第二接触件的接触部分彼此面对。第一触点各自包括一端的接触部分和另一端的连接部分。第二触点分别包括一端具有接触部分的第一部分和另一端处的受压部分，在外端具有连接部分的第二部件和用于将第一部件与其余部件接合的弹性接合部分第二件的结尾。枢转构件包括致动部分，推动部分和锚定孔。推动部分在压力接收部分和第二接触件的连接部分之间枢转运动，在此期间枢转运动中，推动部分的旋转轴线以其枢转运动而移动以实现其紧凑的旋转。第二触点分别设置在第二部件上，在弹性接合部分附近具有固定部分。如上所述构造的连接器防止了当枢转构件被枢转地移动时触头翘曲或变形，并且实现了稳定的电连接，连接器的整体高度降低以及导体的高密度。

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