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    • 12. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20090101969A1
    • 2009-04-23
    • US12248577
    • 2008-10-09
    • Ryota KATSUMATAMasaru KitoYoshiaki FukuzumiMasaru KidohHiroyasu TanakaHideaki AochiYasuyuki Matsuoka
    • Ryota KATSUMATAMasaru KitoYoshiaki FukuzumiMasaru KidohHiroyasu TanakaHideaki AochiYasuyuki Matsuoka
    • H01L29/78H01L21/336
    • H01L29/0847H01L29/0657H01L29/0692H01L29/4238H01L29/66666H01L29/7827H01L2924/0002H01L2924/00
    • A semiconductor device comprising: a semiconductor substrate; a first conductive layer provided on a surface of the substrate and serving as one of a source and a drain; a first insulating film provided on the first conductive layer; a gate electrode film provided on the first insulating film; a second insulating film provided on the gate electrode film; a gate opening provided so as to penetrate the second insulating film, the gate electrode film and the first insulating film to expose a part of the first conductive layer; a recess provided in the surface of the first conductive layer just below the gate opening; a gate insulator provided on the side surface of the gate opening and having a projecting shape at a portion between the first insulating film and the recess; a second conductive layer buried in the recess and in a bottom of the gate opening so as to be in contact with the gate insulator, and serving as the one of the source and the drain while being in contact with the first conductive layer; a channel which is buried in the gate opening above the second conductive layer so as to face the gate electrode film with the gate insulator therebetween, and which has a channel layer generated therein, the channel layer allowing majority carriers to flow between the source and the drain in response to a voltage applied to the gate; and a third conductive layer buried in the gate opening above the channel so as to be in contact with the gate insulator to serve as the other one of the source and the drain.
    • 一种半导体器件,包括:半导体衬底; 设置在所述基板的表面上并用作源极和漏极之一的第一导电层; 设置在所述第一导电层上的第一绝缘膜; 设置在所述第一绝缘膜上的栅电极膜; 设置在栅电极膜上的第二绝缘膜; 设置为穿透第二绝缘膜的栅极开口,栅极电极膜和第一绝缘膜,以暴露第一导电层的一部分; 设置在所述第一导电层的位于所述栅极开口正下方的表面中的凹部; 栅极绝缘体,其设置在所述栅极开口的侧表面上,并且在所述第一绝缘膜和所述凹部之间的部分处具有突出形状; 第二导电层,其被埋置在所述凹部中并且位于所述栅极开口的底部以与所述栅极绝缘体接触,并且在与所述第一导电层接触的同时用作所述源极和漏极中的一个; 埋入在第二导电层上方的栅极开口中以与门极绝缘体相对的栅极电极膜并且其中产生沟道层的沟道,该沟道层允许多数载流子在源极和源极之间流动 响应于施加到门的电压而漏极; 以及掩埋在沟道上方的栅极开口中的第三导电层,以便与栅极绝缘体接触以用作源极和漏极中的另一个。