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11. 发明申请

US20050051721A1 Sample dimension-measuring method and charged particle beam apparatus 有权
标题翻译：样品尺寸测量方法和带电粒子束装置
公开(公告)号：US20050051721A1
公开(公告)日：2005-03-10
申请号：US10875509
申请日：2004-06-25
申请人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
发明人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
IPC分类号： G01B11/24 , G01B15/04 , G01N21/47 , G01N23/225 , H01J37/28 , H01L21/66 , G01N23/00
CPC分类号： G01N21/4788 , G01N23/225 , H01J2237/2816
摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, The method and apparatus for executing following steps of calculating an average of the dimensional values of said plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of said feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be required precisely by the above subject matter.
摘要翻译：提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。例如，用于执行以下步骤的方法和装置，用于计算所述多个扫描的特征对象的维度值的平均值; 并且基于所计算的平均值和当照射光时获得的所述特征对象的尺寸值之间的差异来计算尺寸值的偏移。精确地通过上述主题来要求光学测量装置和扫描电子显微镜之间的测量值之间的偏移。

12. 发明授权

US07476856B2 Sample dimension-measuring method and charged particle beam apparatus 有权
标题翻译：样品尺寸测量方法和带电粒子束装置
公开(公告)号：US07476856B2
公开(公告)日：2009-01-13
申请号：US10875509
申请日：2004-06-25
申请人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
发明人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
IPC分类号： G01N23/00 , G01B11/10
CPC分类号： G01N21/4788 , G01N23/225 , H01J2237/2816
摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.
摘要翻译：提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。例如，该方法和装置可以执行以下步骤：计算多个扫描的特征对象的维度值的平均值; 并且基于计算的平均值与照射光时获得的特征对象的尺寸值之间的差异来计算尺寸值的偏移。可以精确地确定光学测量装置与扫描电子显微镜之间的测量值之间的偏移。

13. 发明授权

US07164127B2 Scanning electron microscope and a method for evaluating accuracy of repeated measurement using the same 有权
标题翻译：扫描电子显微镜和使用其进行重复测量的精度的评估方法
公开(公告)号：US07164127B2
公开(公告)日：2007-01-16
申请号：US10988522
申请日：2004-11-16
申请人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
发明人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
IPC分类号： G01N23/00
CPC分类号： G01N23/225
摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.
摘要翻译：本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响，以及使用扫描电子显微镜评价重复测定的精度的方法。提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。这使得可以消除由微微分图案形状引起的测量中的变化。

14. 发明申请

US20050247860A1 Electron microscope, measuring method using the same, electron microscope system, and method for controlling the system 有权
标题翻译：电子显微镜，使用其的测量方法，电子显微镜系统和控制系统的方法
公开(公告)号：US20050247860A1
公开(公告)日：2005-11-10
申请号：US11119934
申请日：2005-05-03
申请人： Chie Shishido , Ryo Nakagaki , Mayuka Oosaki , Hiroki Kawada
发明人： Chie Shishido , Ryo Nakagaki , Mayuka Oosaki , Hiroki Kawada
IPC分类号： G01B15/00 , G01N23/00 , G01N23/225 , G21K7/00 , H01J37/22 , H01J37/28 , H01J40/14 , H01L21/66
CPC分类号： H01J37/28 , G01N23/225 , H01J37/222 , H01J37/263 , H01J2237/24578 , H01J2237/2817 , H01J2237/2823
摘要： The present invention relates to an electron microscope which reduces a difference in measured values that occur due to a difference in resolution that cannot be fully adjusted which exists among electron microscopes, or occurs as time elapses, and a method for measuring dimensions. An operator adapted to compensate for changes of an electron image to be generated due to a difference in probe diameter is obtained in advance from electron images of one reference sample created by electron microscopes having different resolution (probe diameter). Then a compensation-measurement electron image which is equivalent to an electron image created under the same probe diameter by applying the operator for compensation, and the compensation-measurement electron image is used for measuring the dimensions.
摘要翻译：本发明涉及一种电子显微镜，其特征在于，减少由电子显微镜中存在的不能充分调整的分辨率的差异而发生的测量值的差异，或者随着时间的推移而发生的电子显微镜以及尺寸的测定方法。从具有不同分辨率（探针直径）的电子显微镜产生的一个参考样品的电子图像预先获得适于补偿由于探针直径差引起的电子图像变化的操作者。然后通过施加用于补偿的操作者，并且使用补偿测量电子图像来测量相当于在相同探针直径下产生的电子图像的补偿测量电子图像来测量尺寸。

15. 发明申请

US20050205780A1 Scanning electron microscope and a method for evaluating accuracy of repeated measurement using the same 有权
标题翻译：扫描电子显微镜和使用其进行重复测量的精度的评估方法
公开(公告)号：US20050205780A1
公开(公告)日：2005-09-22
申请号：US10988522
申请日：2004-11-16
申请人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
发明人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
IPC分类号： G01B15/00 , G01N23/00 , G01N23/225 , G03C5/00 , H01J37/28
CPC分类号： G01N23/225
摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.
摘要翻译：本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响，以及使用扫描电子显微镜评价重复测定的精度的方法。提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。这使得可以消除由微微分图案形状引起的测量中的变化。

16. 发明授权

US07408155B2 Measuring method and its apparatus 有权
标题翻译：测量方法及其装置
公开(公告)号：US07408155B2
公开(公告)日：2008-08-05
申请号：US11202146
申请日：2005-08-12
申请人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
发明人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
IPC分类号： G03F7/20 , G03F7/40
CPC分类号： G01N23/225
摘要： A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.
摘要翻译：使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括：通过拾取样品的图像获得样品的二次电子图像使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓，所述多个图案的横截面具有已知的形状和尺寸，并且是不同的形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。

17. 发明授权

US07399964B2 Electron microscope, measuring method using the same, electron microscope system, and method for controlling the system 有权
标题翻译：电子显微镜，使用其的测量方法，电子显微镜系统和控制系统的方法
公开(公告)号：US07399964B2
公开(公告)日：2008-07-15
申请号：US11119934
申请日：2005-05-03
申请人： Chie Shishido , Ryo Nakagaki , Mayuka Oosaki , Hiroki Kawada
发明人： Chie Shishido , Ryo Nakagaki , Mayuka Oosaki , Hiroki Kawada
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , G01N23/225 , H01J37/222 , H01J37/263 , H01J2237/24578 , H01J2237/2817 , H01J2237/2823
摘要： The present invention relates to an electron microscope which reduces a difference in measured values that occur due to a difference in resolution that cannot be fully adjusted which exists among electron microscopes, or occurs as time elapses, and a method for measuring dimensions. An operator adapted to compensate for changes of an electron image to be generated due to a difference in probe diameter is obtained in advance from electron images of one reference sample created by electron microscopes having different resolution (probe diameter). Then a compensation-measurement electron image which is equivalent to an electron image created under the same probe diameter by applying the operator for compensation, and the compensation-measurement electron image is used for measuring the dimensions.
摘要翻译：本发明涉及一种电子显微镜，其特征在于，减少由电子显微镜中存在的不能充分调整的分辨率的差异而发生的测量值的差异，或者随着时间的推移而发生的电子显微镜以及尺寸的测定方法。从具有不同分辨率（探针直径）的电子显微镜产生的一个参考样品的电子图像预先获得适于补偿由于探针直径差引起的电子图像变化的操作者。然后通过施加用于补偿的操作者，并且使用补偿测量电子图像来测量相当于在相同探针直径下产生的电子图像的补偿测量电子图像来测量尺寸。

18. 发明授权

US06913861B2 Method of observing exposure condition for exposing semiconductor device and its apparatus and method of manufacturing semiconductor device 有权
标题翻译：观察曝光半导体器件的曝光条件的方法及其装置及制造半导体器件的方法
公开(公告)号：US06913861B2
公开(公告)日：2005-07-05
申请号：US10370369
申请日：2003-02-18
申请人： Chie Shishido , Osamu Komuro , Hidetoshi Morokuma , Ryo Nakagaki , Maki Tanaka , Yuuji Takagi
发明人： Chie Shishido , Osamu Komuro , Hidetoshi Morokuma , Ryo Nakagaki , Maki Tanaka , Yuuji Takagi
IPC分类号： G01B15/00 , G03F7/20 , G03F7/207 , H01J37/28 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70641 , H01J37/28 , H01J2237/2817 , Y10S430/143
摘要： Size characteristic quantities are measured at a plural locations. The size characteristic quantities include edge widths, pattern widths, and/or pattern lengths of the electron-beam images of a resist-dropout pattern and a resist-remaining pattern that are located such that the effective exposure quantities differ depending on the places. With the predetermined measurement errors added thereto, the size characteristic quantities are compared with model data that has been created in advance and that causes various exposure conditions to be related with the size characteristic quantities measured under these various exposure conditions. This comparison makes it possible not only to estimate deviation quantities in the exposure quantity and the focal-point position from the correct values, but also to calculate ambiguity degrees of the estimated values. This, allows the implementation of a proper monitoring/controlling of the exposure-condition variations (i.e., the deviations in the exposure quantity and the focal-point position) in the lithography process.
摘要翻译：在多个位置测量尺寸特征量。尺寸特征量包括抗蚀剂落下图案和抗蚀剂剩余图案的电子束图像的边缘宽度，图案宽度和/或图案长度，其位置使得有效曝光量根据位置而不同。随着预定的测量误差被添加到其中，将尺寸特征量与预先创建的模型数据进行比较，并使各种曝光条件与在这些各种曝光条件下测量的尺寸特征量相关。该比较使得不仅可以从正确值估计曝光量和焦点位置中的偏差量，而且可以计算估计值的模糊度。这允许在光刻工艺中实现曝光条件变化（即，曝光量和焦点位置的偏差）的适当监控/控制。

19. 发明申请

US20060060774A1 Mesuring method and its apparatus 有权
标题翻译： Mesuring方法及其装置
公开(公告)号：US20060060774A1
公开(公告)日：2006-03-23
申请号：US11202146
申请日：2005-08-12
申请人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
发明人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
IPC分类号： G01N23/00
CPC分类号： G01N23/225
摘要： A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.
摘要翻译：使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括：通过拾取样品的图像获得样品的二次电子图像使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓，所述多个图案的横截面具有已知的形状和尺寸并且是不同的形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。

20. 发明申请

US20130114881A1 METHOD AND APPARATUS FOR REVIEWING DEFECTS 有权
公开(公告)号：US20130114881A1
公开(公告)日：2013-05-09
申请号：US13729635
申请日：2012-12-28
申请人： Minoru HARADA , Ryo Nakagaki , Kenji Obara , Atsushi Miyamoto
发明人： Minoru HARADA , Ryo Nakagaki , Kenji Obara , Atsushi Miyamoto
IPC分类号： G06T7/00
CPC分类号： G06T7/004 , G01N21/9501 , G06T7/0004 , G06T7/001 , G06T7/70 , G06T2207/10061 , G06T2207/30148
摘要： Disclosed is a method for reviewing defects in a large number of samples within a short period of time through the use of a defect review apparatus. To collect defect images steadily and at high throughput, a defect detection method is selected before imaging and set up for each of review target defects in the samples in accordance with the external characteristics of the samples that are calculated from the design information about the samples. The defect images are collected after an imaging sequence is set up for the defect images and reference images in such a manner as to reduce the time required for stage movement in accordance with the defect coordinates of the samples and the selected defect detection method.

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