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11. 发明申请

US20100157933A1 METHOD FOR PERFORMING RANGING PROCEDURE 有权
标题翻译：执行测距程序的方法
公开(公告)号：US20100157933A1
公开(公告)日：2010-06-24
申请号：US12513608
申请日：2008-07-04
申请人： Kyu Jin Park , Minseok Oh , Hyung Ho Park , Doo Hyun Seong , Eun Jong Lee , Jin Soo Choi , Jae Hoon Chung , Seong Ho Moon
发明人： Kyu Jin Park , Minseok Oh , Hyung Ho Park , Doo Hyun Seong , Eun Jong Lee , Jin Soo Choi , Jae Hoon Chung , Seong Ho Moon
IPC分类号： H04W4/00 , H04J3/00
CPC分类号： H04W56/0005
摘要： A method for performing a ranging procedure includes transmitting a ranging request message through a randomly selected ranging slot to a base station, the ranging request message comprising a randomly selected ranging code, and receiving a ranging response message including collision information which informs that collision occurs when at least two user equipments transmit the same ranging code to the base station through the same ranging slot. Delay in the ranging can be reduced.
摘要翻译：一种用于执行测距过程的方法包括：通过随机选择的测距时隙向基站发送测距请求消息，所述测距请求消息包括随机选择的测距码，并且接收包括冲突信息的测距响应消息，所述测距响应消息通知冲突信息，至少两个用户设备通过相同的测距槽向基站发送相同的测距码。可以减少测距中的延时。

12. 发明授权

US06703712B2 Microelectronic device layer deposited with multiple electrolytes 有权
标题翻译：微电子器件层沉积有多个电解质
公开(公告)号：US06703712B2
公开(公告)日：2004-03-09
申请号：US10008015
申请日：2001-11-13
申请人： Daniele Gilkes , Minseok Oh , Sailesh M. Merchant
发明人： Daniele Gilkes , Minseok Oh , Sailesh M. Merchant
IPC分类号： H01L2348
CPC分类号： H01L21/76877 , H01L21/2885
摘要： A microelectronic device (24) is formed by plating a layer of material (36) to fill a cavity (28) formed in a substrate (26). The layer of material has a plurality of regions (42, 44, 46) with respective chemical compositions formed by varying the chemical composition of the plating solution as the layer of material is being deposited. In this manner, expensive additives necessary to achieve desired properties within the cavity may be omitted from the region (46) of overfill that will be removed by a later planarization process.
摘要翻译：微电子器件（24）通过电镀一层材料（36）以填充形成在衬底（26）中的空腔（28）而形成。材料层具有多个区域（42,44,46），其具有通过随着材料层的沉积而改变镀液的化学组成而形成各自的化学组成。以这种方式，可以从将通过稍后的平坦化处理除去的过量填充区域（46）中省略在空腔内实现所需性质所需的昂贵的添加剂。

13. 发明授权

US09867025B2 Mobile terminal and method for controlling same 有权
公开(公告)号：US09867025B2
公开(公告)日：2018-01-09
申请号：US14114491
申请日：2012-04-30
申请人： Hangyu Cho , Minseok Oh , Kyujin Park
发明人： Hangyu Cho , Minseok Oh , Kyujin Park
IPC分类号： H04W4/02 , H04W8/00 , H04W64/00 , H04W4/04
CPC分类号： H04W8/005 , H04W4/02 , H04W4/023 , H04W4/043 , H04W64/00
摘要： The present invention provides a mobile terminal comprising: a wireless communication unit for sensing a location of a mobile terminal, and receiving, from the outside, a place image corresponding to the location of the mobile terminal and neighboring terminal information of at least one neighboring terminal at the same place as the mobile terminal; a control unit for generating a device map on which the neighboring terminal which is at the same place as the mobile terminal, is displayed on the basis of the place image and the neighboring terminal information; a memory for storing the device map; and a display unit for displaying the device map.

14. 发明授权

US09386440B2 Method for improving communication performance using vehicle provided with antennas 有权
标题翻译：使用配备天线的车辆改善通信性能的方法
公开(公告)号：US09386440B2
公开(公告)日：2016-07-05
申请号：US14114511
申请日：2012-04-30
申请人： Hangyu Cho , Kyujin Park , Minseok Oh , Sungho Park
发明人： Hangyu Cho , Kyujin Park , Minseok Oh , Sungho Park
IPC分类号： H04W8/18 , B60W50/08 , H04B1/3822 , H04B7/04 , H04L29/08
CPC分类号： H04W8/18 , B60K2350/35 , B60W50/085 , B60W2540/28 , H04B1/3822 , H04B7/0413 , H04L67/025
摘要： The present invention relates to a mobile communication system, and more specifically, to a method for providing an improved communication environment for a terminal using a vehicle provided with antennas, and to an apparatus for executing same. As related to one embodiment of the present invention, a data transceiving method for a terminal using a vehicle-mounted type communication module comprising a plurality of antennas comprises the steps of: establishing a wire data path with the communication module; negotiating multiple-antenna capabilities with a base station using multiple-antenna capabilities information of the communication module; and transmitting to the communication module multiple-antenna transmission parameters on the basis of the negotiation, and a data unit comprising uplink data to be transmitted to the base station, wherein the data unit, which has been generated in the medium access control (MAC) layer of the terminal and then converted into a radio frequency (RF) signal in the physical layer (PHY) of the communication module, can be transmitted to the base station using the plurality of antennas.
摘要翻译：移动通信系统技术领域本发明涉及一种移动通信系统，更具体地，涉及一种用于为使用设置有天线的车辆的终端提供改进的通信环境的方法，以及用于执行该天线的设备。与本发明的一个实施例相关的是，使用包括多个天线的车载型通信模块的终端的数据收发方法包括以下步骤：与所述通信模块建立有线数据路径; 使用通信模块的多天线能力信息与基站协商多天线能力; 以及基于所述协商向所述通信模块发送多天线传输参数，以及数据单元，包括要发送到所述基站的上行链路数据，其中，已经在所述介质访问控制（MAC）中生成的所述数据单元，终端的层，然后转换成通信模块的物理层（PHY）中的射频（RF）信号，可以使用多个天线发送到基站。

15. 发明授权

US08373273B2 Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby 有权
标题翻译：形成具有金属扩散阻挡层和由此形成的器件的具有镶嵌互连的集成电路器件的方法
公开(公告)号：US08373273B2
公开(公告)日：2013-02-12
申请号：US13533135
申请日：2012-06-26
申请人： Hyeok-Sang Oh , Woo-Jin Jang , Bum-Ki Moon , Ji-Hong Choi , Minseok Oh , Tien-Jen Cheng
发明人： Hyeok-Sang Oh , Woo-Jin Jang , Bum-Ki Moon , Ji-Hong Choi , Minseok Oh , Tien-Jen Cheng
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76844 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76885
摘要： Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.
摘要翻译：形成集成电路器件的方法包括在衬底上形成其中具有沟槽的层间绝缘层，并在沟槽中形成电互连（例如Cu镶嵌互连）。层间绝缘层的上表面被凹入以暴露电互连的侧壁。电绝缘的第一覆盖图案形成在层间绝缘层的凹陷的上表面和电互连的暴露的侧壁上，但是从电互连的上表面去除。在电互连的上表面上形成金属扩散阻挡层，然而，第一覆盖图案用于阻挡电互连的侧壁上的金属扩散阻挡层的形成。该金属扩散阻挡层可以使用化学镀技术形成。

16. 发明申请

US20120267785A1 METHODS OF FORMING INTEGRATED CIRCUIT DEVICES HAVING DAMASCENE INTERCONNECTS THEREIN WITH METAL DIFFUSION BARRIER LAYERS AND DEVICES FORMED THEREBY 有权
标题翻译：形成集成电路装置的方法，其具有金属扩散阻挡层和形成的器件的大分子互连
公开(公告)号：US20120267785A1
公开(公告)日：2012-10-25
申请号：US13533135
申请日：2012-06-26
申请人： Hyeok-Sang Oh , Woo-Jin Jang , Bum-Ki Moon , Ji-Hong Choi , Minseok Oh , Tien-Jen Cheng
发明人： Hyeok-Sang Oh , Woo-Jin Jang , Bum-Ki Moon , Ji-Hong Choi , Minseok Oh , Tien-Jen Cheng
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/76844 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76885
摘要： Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.
摘要翻译：形成集成电路器件的方法包括在衬底上形成其中具有沟槽的层间绝缘层，并在沟槽中形成电互连（例如Cu镶嵌互连）。层间绝缘层的上表面被凹入以暴露电互连的侧壁。电绝缘的第一覆盖图案形成在层间绝缘层的凹陷的上表面和电互连的暴露的侧壁上，但是从电互连的上表面去除。在电互连的上表面上形成金属扩散阻挡层，然而，第一覆盖图案用于阻挡电互连的侧壁上的金属扩散阻挡层的形成。该金属扩散阻挡层可以使用化学镀技术形成。

17. 发明授权

US06331484B1 Titanium-tantalum barrier layer film and method for forming the same 有权
标题翻译：钛 - 钽阻挡层膜及其形成方法
公开(公告)号：US06331484B1
公开(公告)日：2001-12-18
申请号：US09519193
申请日：2000-03-06
申请人： Siddhartha Bhowmik , Sailesh Mansinh Merchant , Minseok Oh , Pradip Kumar Roy , Sidhartha Sen
发明人： Siddhartha Bhowmik , Sailesh Mansinh Merchant , Minseok Oh , Pradip Kumar Roy , Sidhartha Sen
IPC分类号： H01L214763
CPC分类号： H01L21/76864 , H01L21/76807 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L23/53238 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A titanium-tantalum barrier layer film for use in conjunction with an interconnect film such as copper and a method for forming the same provides a relatively titanium rich/tantalum deficient portion adjacent the interface it forms with a dielectric film and a relatively tantalum rich/titanium deficient portion adjacent the interface it forms with a conductive interconnect film formed over the barrier layer film. The titanium rich/tantalum deficient portion provides good adhesion to the dielectric film and the tantalum rich/titanium deficient portion forms a hetero-epitaxial interface with the interconnect film and suppresses the formation of inter-metallic compounds. A single titanium-tantalum film having a composition gradient from top-to-bottom may be formed using various techniques including PVD, CVD, sputter deposition using a sputtering target of homogeneous composition, and sputter deposition using multiple sputtering targets. A composite titanium-tantalum film consists of two separately formed films.
摘要翻译：用于与诸如铜的互连膜一起使用的钛 - 钽阻挡层膜及其形成方法提供了与其形成的界面相邻的富钛/钽缺陷部分，其与介电膜和相对富钽/钛与其形成的界面相邻的缺陷部分与在阻挡层膜上形成的导电互连膜形成。富钛/钽缺陷部分对电介质膜提供良好的粘附性，并且富钽/钛缺陷部分与互连膜形成异质外延界面并抑制金属间化合物的形成。可以使用包括PVD，CVD，使用均匀组合物的溅射靶的溅射沉积以及使用多个溅射靶的溅射沉积的各种技术来形成具有从顶部到底部的组成梯度的单个钛 - 钽膜。复合钛 - 钽薄膜由两个单独形成的薄膜组成。

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