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11. 发明授权

US07493589B2 Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process 有权
标题翻译：用于多重曝光过程中用于基于模型的几何分解的方法，程序产品和装置
公开(公告)号：US07493589B2
公开(公告)日：2009-02-17
申请号：US11496742
申请日：2006-08-01
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70433 , G03F7/705
摘要： A method of decomposing a target pattern having features to be imaged on a substrate so as to allow said features to be imaged in a multi-exposure process. The method includes the steps of: (a) segmenting a plurality of the features into a plurality of polygons; (b) determining the image log slope (ILS) value for each of the plurality of polygons; (c) determining the polygon having the minimum ILS value, and defining a mask containing the polygon; (d) convolving the mask defined in step (c) with an eigen function of a transmission cross coefficient so as to generate an interference map, where the transmission cross coefficient defines the illumination system to be utilized to image the target pattern; and (e) assigning a phase to the polygon based on the value of the interference map at a location corresponding to the polygon, where the phase defines which exposure in said multi-exposure process the polygon is assigned.
摘要翻译：一种分解具有要在基底上成像的特征的目标图案的方法，以便允许所述特征在多曝光过程中成像。该方法包括以下步骤：（a）将多个特征分割为多个多边形; （b）确定所述多个多边形中的每一个的图像对数斜率（ILS）值; （c）确定具有最小ILS值的多边形，并且定义包含多边形的掩模; （d）将步骤（c）中定义的掩模与传输交叉系数的本征函数进行卷积，以产生干涉图，其中传输交叉系数定义要用于对目标图案成像的照明系统; 以及（e）基于在与所述多边形相对应的位置处的所述干涉图的值将相位分配给所述多边形，其中所述相位定义在所述多曝光处理中分配多边形的曝光。

12. 发明授权

US06887625B2 Assist features for use in lithographic projection 有权
标题翻译：辅助光刻投影的功能
公开(公告)号：US06887625B2
公开(公告)日：2005-05-03
申请号：US09905198
申请日：2001-07-16
申请人： Johannes Jacobus Matheus Baselmans , Markus Schluter , Donis George Flagello , Robert John Socha
发明人： Johannes Jacobus Matheus Baselmans , Markus Schluter , Donis George Flagello , Robert John Socha
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00 , G03C5/00 , G06F17/50
CPC分类号： G03F7/70433 , G03F1/36
摘要： In a mask pattern for a device such as a DRAM including a nearly regular array of isolated features, assist features are positioned so as to make the array more symmetric. Where the isolated features are positioned at most but not all of the points of a regular unit cell, the assist features may be positioned at the points of the unit cell not occupied by the isolated features. The isolated features may represent contact holes.
摘要翻译：在诸如包括几乎规则的孤立特征阵列的DRAM的设备的掩模图案中，辅助特征被定位成使阵列更对称。在隔离特征被定位在常规单位单元的最多但不是全部点处的情况下，辅助特征可以位于不被隔离特征占据的单位单元的点处。隔离的特征可以表示接触孔。

13. 发明授权

US06871337B2 Illumination optimization for specific mask patterns 有权
标题翻译：特定掩模图案的照明优化
公开(公告)号：US06871337B2
公开(公告)日：2005-03-22
申请号：US10079829
申请日：2002-02-22
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , H01L21/027 , G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F7/70125 , G03F7/70441 , G03F7/705
摘要： A method and apparatus for microlithography. The method and apparatus include optimizing illumination modes based on characteristics of a specific mask pattern. The illumination is optimized by determining an appropriate illumination mode based on diffraction orders of the reticle, and the autocorrelation of the projection optic. By elimination of parts of the illumination pattern which have no influence on modulation, excess DC light can be reduced, thereby improving depth of focus. Optimization of mask patterns includes addition of sub-resolution features to reduce pitches and discretize the probability density function of the space width.
摘要翻译：一种用于微光刻的方法和装置。该方法和装置包括基于特定掩模图案的特性来优化照明模式。通过基于掩模版的衍射级确定适当的照明模式和投影光学器件的自相关来优化照明。通过消除对调制没有影响的照明图案的部分，可以减少过量的DC光，从而提高焦点的深度。掩模图案的优化包括添加子分辨率特征以减少间距并离散空间宽度的概率密度函数。

14. 发明授权

US08612900B2 Rule optimization in lithographic imaging based on correlation of functions representing mask and predefined optical conditions 有权
标题翻译：基于表示掩模和预定义光学条件的函数的相关性的光刻成像中的设计规则优化
公开(公告)号：US08612900B2
公开(公告)日：2013-12-17
申请号：US13042303
申请日：2011-03-07
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/70 , G06F17/50 , G06F17/5081
摘要： Methods, computer program products and apparatuses for optimizing design rules for producing a mask are disclosed, while keeping the optical conditions (including but not limited to illumination shape, projection optics numerical aperture (NA) etc.) fixed. A cross-correlation function is created by multiplying the diffraction order functions of the mask patterns with the eigenfunctions from singular value decomposition (SVD) of a TCC matrix. The diffraction order functions are calculated for the original design rule set, i.e., using the unperturbed condition. ILS is calculated at an edge of a calculated image of a critical polygon using the cross-correlation results and using translation properties of a Fourier transform. The use of the calculated cross-correlation of the mask and the optical system, and the translation property of the Fourier transform for perturbing the design reduces the computation time needed for determining required changes in the design rules. Once an optimum separation is calculated, it is incorporated into the design rule to optimize the mask layout for improved ILS throughout the mask, including critical and non-critical portions of the mask.
摘要翻译：公开了用于优化用于制造掩模的设计规则的计算机程序产品和装置，同时保持光学条件（包括但不限于照明形状，投影光学数值孔径（NA）等））。通过将掩模图案的衍射级函数与TCC矩阵的奇异值分解（SVD）的本征函数相乘，创建互相关函数。对于原始设计规则集，即使用未受干扰的条件，计算衍射级函数。使用互相关结果并使用傅里叶变换的平移特性，在临界多边形的计算图像的边缘处计算ILS。使用计算的掩模和光学系统的互相关以及用于扰动设计的傅立叶变换的平移特性减少了确定设计规则中所需变化所需的计算时间。一旦计算了最佳分离，就将其纳入设计规则中，以优化掩模布局，以改善整个掩模中的ILS，包括掩模的关键部分和非临界部分。

15. 发明授权

US08572521B2 Method for performing pattern decomposition for a full chip design 有权
标题翻译：执行全芯片设计模式分解的方法
公开(公告)号：US08572521B2
公开(公告)日：2013-10-29
申请号：US12270498
申请日：2008-11-13
申请人： Luoqui Chen , Hong Chen , Jiangwei Li , Robert John Socha
发明人： Luoqui Chen , Hong Chen , Jiangwei Li , Robert John Socha
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of segmenting the target pattern into a plurality of patches; identifying critical features within each patch which violate minimum spacing requirements; generating a critical group graph for each of the plurality of patches having critical features, where the critical group graph of a given patch defines a coloring scheme of the critical features within the given patch, and the critical group graph identifies critical features extending into adjacent patches to the given patch; generating a global critical group graph for the target pattern, where the global critical group graph includes the critical group graphs of each of the plurality of patches, and an identification of the features extending into adjacent patches; and coloring the target pattern based on the coloring scheme defined by the global critical group graph.
摘要翻译：一种用于将包含要印刷在晶片上的特征的目标图案分解为多个图案的方法。该方法包括以下步骤：将目标图案分割成多个贴片; 识别每个补丁内的违反最小间距要求的关键特征; 为具有关键特征的多个补丁中的每一个生成关键组图，其中给定补丁的关键组图定义给定补丁内的关键特征的着色方案，并且关键组图识别延伸到相邻补丁中的关键特征给给定补丁; 为目标模式生成全局关键组图，其中全局关键组图包括多个补丁中的每一个的关键组图，以及延伸到相邻补丁中的特征的标识; 并基于由全局关键组图定义的着色方案着色目标图案。

16. 发明申请

US20120077114A1 Method, Program Product and Apparatus for Model Based Geometry Decomposition for Use in a Multiple Exposure Process 有权
标题翻译：用于多重曝光过程的基于模型的几何分解的方法，程序产品和装置
公开(公告)号：US20120077114A1
公开(公告)日：2012-03-29
申请号：US13244127
申请日：2011-09-23
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G03F1/68 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70433 , G03F7/705
摘要： A method of decomposing a target pattern having features to be imaged on a substrate so as to allow said features to be imaged in a multi-exposure process. The method includes the steps of: segmenting a plurality of the features into a plurality of polygons; determining the image log slope (ILS) value for each of the plurality of polygons; determining the polygon having the minimum ILS value, and defining a mask containing the polygon; convolving the defined mask with an eigen function of a transmission cross coefficient so as to generate an interference map, where the transmission cross coefficient defines the illumination system to be utilized to image the target pattern; and, assigning a phase to the polygon based on the value of the interference map at a location corresponding to the polygon, where the phase defines which exposure in said multi-exposure process the polygon is assigned.
摘要翻译：一种分解具有要在基底上成像的特征的目标图案的方法，以便允许所述特征在多曝光过程中成像。该方法包括以下步骤：将多个特征分割成多个多边形; 确定所述多个多边形中的每一个的图像对数斜率（ILS）值; 确定具有最小ILS值的多边形，并且定义包含多边形的掩模; 将所定义的掩模与传输交叉系数的本征函数进行卷积，以产生干涉图，其中传输交叉系数定义要用于对目标图案成像的照明系统; 并且基于在与所述多边形相对应的位置处的所述干涉图的值将相位分配给所述多边形，其中所述相位定义在所述多曝光处理中指定所述多边形的哪个曝光。

17. 发明申请

US20110219342A1 Design Rule Optimization in Lithographic Imaging Based on Correlation of Functions Representing Mask and Predefined Optical Conditions 有权
标题翻译：基于表示掩模和预定义光学条件的函数相关性的平面成像设计规则优化
公开(公告)号：US20110219342A1
公开(公告)日：2011-09-08
申请号：US13042303
申请日：2011-03-07
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/70 , G06F17/50 , G06F17/5081
摘要： Methods, computer program products and apparatuses for optimizing design rules for producing a mask are disclosed, while keeping the optical conditions (including but not limited to illumination shape, projection optics numerical aperture (NA) etc.) fixed. A cross-correlation function is created by multiplying the diffraction order functions of the mask patterns with the eigenfunctions from singular value decomposition (SVD) of a TCC matrix. The diffraction order functions are calculated for the original design rule set, i.e., using the unperturbed condition. ILS is calculated at an edge of a calculated image of a critical polygon using the cross-correlation results and using translation properties of a Fourier transform. The use of the calculated cross-correlation of the mask and the optical system, and the translation property of the Fourier transform for perturbing the design reduces the computation time needed for determining required changes in the design rules. Once an optimum separation is calculated, it is incorporated into the design rule to optimize the mask layout for improved ILS throughout the mask, including critical and non-critical portions of the mask.
摘要翻译：公开了用于优化用于制造掩模的设计规则的计算机程序产品和装置，同时保持光学条件（包括但不限于照明形状，投影光学数值孔径（NA）等））。通过将掩模图案的衍射级函数与TCC矩阵的奇异值分解（SVD）的本征函数相乘，创建互相关函数。对于原始设计规则集，即使用未受干扰的条件，计算衍射级函数。使用互相关结果并使用傅里叶变换的平移特性，在临界多边形的计算图像的边缘处计算ILS。使用计算的掩模和光学系统的互相关以及用于扰动设计的傅立叶变换的平移特性减少了确定设计规则中所需变化所需的计算时间。一旦计算了最佳分离，就将其纳入设计规则中，以优化掩模布局，以改善整个掩模中的ILS，包括掩模的关键部分和非临界部分。

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