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11. 发明授权

US06223420B1 Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency 失效
标题翻译：制造具有高阻软磁通导向层的读头的方法，以提高读取传感器的效率
公开(公告)号：US06223420B1
公开(公告)日：2001-05-01
申请号：US09206016
申请日：1998-12-04
申请人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , David John Seagle
发明人： Wen Yaung Lee , Tsann Lin , Daniele Mauri , David John Seagle
IPC分类号： G11B542
CPC分类号： G11B5/3109 , B82Y10/00 , G11B5/3919 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A read head has a flux guide layer that is immediately adjacent (abuts) the back edge of a read sensor. The flux guide layer is made of a high resistance soft magnetic material that conducts magnetic flux from the back edge of the read sensor so that the magnetic response at the back edge of the read sensor is significantly higher than zero. This increases the efficiency of the read sensor. The material for the flux guide layer is A-B-C where A is selected from the group Fe and Co, B is selected from the group Hf, Y, Ta and Zr and C is selected from the group O and N. In a preferred embodiment A-B-C is Fe—Hf—O and the Ms&rgr; of the flux guide layer is greater than 50 times the Ms&rgr; of the read sensor layer where the read sensor layer is NiFe, Ms is saturation magnetization and &rgr; is resistivity. Because of the flux guides high resistance current shunting losses are nearly eliminated.
摘要翻译：读头具有与读取传感器的后边缘紧邻（邻接）的磁通引导层。助焊剂层由高电阻软磁材料制成，其从读取传感器的后边缘传导磁通，使得读取传感器的后边缘处的磁响应明显高于零。这增加了读取传感器的效率。助焊剂层的材料是ABC，其中A选自Fe和Co组，B选自Hf，Y，Ta和Zr组，C选自O和N组。在优选实施方案中，ABC是磁通导向层的Fe-Hf-O和Msrho大于读取传感器层为NiFe的读取传感器层的Msrho的50倍，Ms为饱和磁化强度，rho为电阻率。由于磁通导向器高阻电流分流损耗几乎消除。

12. 发明授权

US5768069A Self-biased dual spin valve sensor 失效
公开(公告)号：US5768069A
公开(公告)日：1998-06-16
申请号：US757176
申请日：1996-11-27
申请人： Daniele Mauri
发明人： Daniele Mauri
IPC分类号： G11B5/00 , G11B5/012 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3932 , G11B5/3954 , G11B2005/3996
摘要： A dual spin valve (DSV) magnetoresistive (MR) sensor has a free magnetic layer disposed between first and second pinned magnetic layers. The first pinned layer has two magnetic sublayers separated from each other by an antiparallel spacer. The first magnetic sublayer closer to the free layer has a magnetic moment which is smaller than the magnetic moment of the second magnetic sublayer. The net moment of the magnetic sublayers is chosen to be equal to the magnetic moment of the second pinned layer thus creating a flux closure and substantially minimizing the effect of the demagnetizing forces. By creating a flux closure and current induced magnetic fields, the first and second pinned layers' magnetization are fixed. This is in contrast with conventional dual spin valve sensors using two antiferromagnetic layers to pin the magnetization of the pinned layers.

13. 发明授权

US5731936A Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability 失效
标题翻译：具有提高热稳定性的系数增强的磁阻（MR）传感器
公开(公告)号：US5731936A
公开(公告)日：1998-03-24
申请号：US721642
申请日：1996-09-26
申请人： Wen Yaung Lee , Daniele Mauri
发明人： Wen Yaung Lee , Daniele Mauri
IPC分类号： G11B5/39 , G11B5/40 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B5/3967 , H01F10/324 , G11B5/40
摘要： An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni.sub.89 Fe.sub.21).sub.60 Cr.sub.40 and Ni.sub.60 Cr.sub.40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25 .ANG. and 50 .ANG. respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.
摘要翻译：通过使用与坡莫合金（NiFe）条纹相接触的一个或多个基于铬的间隔层，提供具有改进的MR系数和改善的热稳定性的MR传感器。铬基间隔层可以是NiFeCr或NiCr。已发现最好的组合物是（Ni89Fe21）60Cr40和Ni60Cr40。对于NiCr，当NiCr层沉积在钽层（Ta）上时，MR条纹的MR系数最大。此外，当NiFeCr和NiCr层的厚度分别为25和50时，MR系数被优化。两个间隔层具有高电阻兼容的低分流感测电流。

14. 发明授权

US08760823B1 Method and system for providing a read transducer having soft and hard magnetic bias structures 有权
标题翻译：用于提供具有软和硬磁偏置结构的读取换能器的方法和系统
公开(公告)号：US08760823B1
公开(公告)日：2014-06-24
申请号：US13332313
申请日：2011-12-20
申请人： Laurence L. Chen , Anup G. Roy , Yunfei Ding , Ming Mao , Amritpal S. Rana , Daniele Mauri
发明人： Laurence L. Chen , Anup G. Roy , Yunfei Ding , Ming Mao , Amritpal S. Rana , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3912 , G11B5/3932 , G11B5/398
摘要： A method and system provide a magnetic transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a read sensor, at least one soft magnetic bias structure and at least one hard bias structure. The read sensor includes a sensor layer that has at least one edge in the track width direction along the ABS. The soft magnetic bias structure(s) are adjacent to the edge(s) of the sensor layer. The soft magnetic bias structure has a first permeability. The soft bias structure(s) are between the read sensor and the hard bias structure(s). The hard bias structure(s) are adjacent to a portion of the soft bias structure(s) and have a second permeability. The first permeability is at least ten multiplied by the second permeability.
摘要翻译：一种方法和系统提供具有空气轴承表面（ABS）的磁换能器。磁换能器包括第一屏蔽，读取传感器，至少一个软磁偏置结构和至少一个硬偏压结构。读取传感器包括沿ABS沿轨道宽度方向具有至少一个边缘的传感器层。软磁偏置结构与传感器层的边缘相邻。软磁偏置结构具有第一磁导率。柔性偏置结构位于读取传感器和硬偏置结构之间。硬偏压结构与软偏压结构的一部分相邻并且具有第二磁导率。第一渗透率至少为乘以第二渗透率的十倍。

15. 发明授权

US08675318B1 Method and system for providing a read transducer having a reduced shield-to-shield spacing 有权
标题翻译：用于提供具有减小的屏蔽到屏蔽间隔的读取换能器的方法和系统
公开(公告)号：US08675318B1
公开(公告)日：2014-03-18
申请号：US13302994
申请日：2011-11-22
申请人： Kuok San Ho , Savas Gider , Daniele Mauri , Ming Mao , Sining Mao
发明人： Kuok San Ho , Savas Gider , Daniele Mauri , Ming Mao , Sining Mao
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , G11B5/3912
摘要： A method and system for providing a read magnetic transducer having an air-bearing surface (ABS) is described. The magnetic read transducer includes a first shield, a read sensor stack, an antiferromagnetic (AFM) tab, and a second shield. The read sensor stack includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and between the pinned layer and the free layer. A portion of the read sensor stack is at the ABS. The AFM tab is recessed from the ABS and adjacent to a portion of the pinned layer. The read sensor resides between the first shield and the second shield.
摘要翻译：描述了一种用于提供具有空气轴承表面（ABS）的读取磁换能器的方法和系统。磁读取传感器包括第一屏蔽，读取传感器堆叠，反铁磁（AFM）接头和第二屏蔽。读取传感器堆叠包括钉扎层，间隔层和自由层。间隔层是非磁性的，在被钉扎层和自由层之间。读取传感器堆叠的一部分在ABS。 AFM标签从ABS凹入并与被钉扎层的一部分相邻。读取传感器位于第一屏蔽和第二屏蔽之间。

16. 发明授权

US07187524B2 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process 失效
标题翻译：具有缝合纵向偏置叠层的巨磁电阻传感器及其制造工艺
公开(公告)号：US07187524B2
公开(公告)日：2007-03-06
申请号：US11064723
申请日：2005-02-23
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/39 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046
摘要： A giant magnetoresistance (GMR) magnetic head that includes a GMR read sensor with a stitched longitudinal bias (LB) stack. The GMR read sensor includes seed, pinning, pinned, spacer, sense and cap layers in a read region, and its seed and pinning layers are extended into two side regions. The LB stack is fabricated on the pinning layer in the two side regions and includes separation, seed and LB layers. The separation layer, preferably made of an amorphous film, separates the pinning layer from the seed and LB layers and thereby prevents unwanted crystalline effects of the pinning layer. Monolayer photoresist patterning and chemical mechanical polishing may be incorporated into the fabrication process of the GMR head to attain uniform thicknesses of the separation, seed and LB layers, and to align the midplane of the LB layer at the same horizontal level as the midplane of the sense layer.
摘要翻译：一种巨磁阻（GMR）磁头，其包括具有缝合纵向偏置（LB）堆叠的GMR读取传感器。 GMR读取传感器包括读取区域中的种子，钉扎，固定，间隔物，感测层和盖层，并且其种子和钉扎层延伸到两个侧面区域。 LB堆叠制造在两侧区域的钉扎层上，包括分离，种子和LB层。优选由非晶膜制成的分离层将钉扎层与种子和LB层分开，从而防止钉扎层的不期望的结晶效应。可以将单层光致抗蚀剂图案化和化学机械抛光结合到GMR头的制造工艺中以获得分离，种子和LB层的均匀厚度，并且将LB层的中平面对准在与感觉层。

17. 发明申请

US20060044707A1 Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling 失效
标题翻译：具有堆叠偏置层的磁隧道结，提供正交交换耦合
公开(公告)号：US20060044707A1
公开(公告)日：2006-03-02
申请号：US10931677
申请日：2004-08-31
申请人： Satoru Araki , Jeffrey Childress , Stefan Maat , Daniele Mauri
发明人： Satoru Araki , Jeffrey Childress , Stefan Maat , Daniele Mauri
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.
摘要翻译：具有堆叠偏压结构的磁阻传感器。传感器包括偏置间隔件，其允许在与偏压层的磁矩正交的方向上偏置自由层磁矩。

18. 发明申请

US20060042930A1 Method for reactive sputter deposition of a magnesium oxide (MgO) tunnel barrier in a magnetic tunnel junction 审中-公开
标题翻译：在磁性隧道结中的氧化镁（MgO）隧道势垒的反应溅射沉积的方法
公开(公告)号：US20060042930A1
公开(公告)日：2006-03-02
申请号：US10927928
申请日：2004-08-26
申请人： Daniele Mauri
发明人： Daniele Mauri
IPC分类号： C23C14/00
CPC分类号： C23C14/025 , B82Y25/00 , B82Y40/00 , C23C14/0036 , C23C14/081 , C23C14/34 , G11B5/3903 , G11C11/16 , H01F10/3254 , H01F10/3295 , H01F41/18 , H01F41/307 , H01F41/32 , H01L43/12
摘要： As part of the fabrication of a magnetic tunnel junction (MTJ), a magnesium oxide (MgO) tunnel barrier is reactively sputter deposited from a Mg target in the presence of reactive oxygen gas (O2) in the “high-voltage” state to assure that deposition occurs with the Mg target in its metallic mode, i.e., no or minimal oxidation. Because the metallic mode of the Mg target has a finite lifetime, a set of O2 flow rates and associated sputter deposition times are established, with each flow rate and deposition time assuring that deposition occurs with the Mg target in the metallic mode and resulting in a known tunnel barrier thickness. The commencement of undesirable Mg target oxidation is associated with a decrease in target voltage, so the sputtering can also be terminated by monitoring the target voltage and terminating application of power to the target when the voltage reaches a predetermined value.
摘要翻译：作为制造磁性隧道结（MTJ）的一部分，在活性氧气（O 2 O 2）存在下，将Mg氧化物（MgO）隧道势垒从Mg靶反应溅射沉积 “高电压”状态，以确保Mg靶以其金属模式发生沉积，即没有或最小的氧化。因为Mg靶的金属模具具有有限的寿命，所以建立了一组O 2/2流速和相关的溅射沉积时间，每个流速和沉积时间确保了Mg靶材的沉积在金属模式下，并产生已知的隧道势垒厚度。不期望的Mg靶氧化的开始与目标电压的降低相关联，因此当电压达到预定值时，也可以通过监测目标电压并终止对目标的电力施加来终止溅射。

19. 发明授权

US06989971B2 Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process 失效
标题翻译：具有反应离子蚀刻定义的读宽度和制造工艺的巨磁电阻（GMR）读头
公开(公告)号：US06989971B2
公开(公告)日：2006-01-24
申请号：US10118407
申请日：2002-04-05
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first conductor layer are sequentially deposited on a bottom gap layer. A monolayer photoresist is deposited, exposed and developed in order to open a read trench region for the definition of a read width, and RIE is then applied to remove the first conductor layer in the read trench region. After liftoff of the monolayer photoresist, bilayer photoresists are deposited, exposed and developed in order to mask the read and overlay regions, and a second conductor layer is deposited in two unmasked side regions. As a result, side reading is eliminated and a read width is sharply defined by RIE.
摘要翻译： GMR读取头包括读取区域中的GMR读取传感器和纵向偏置（LB）堆栈，并且GMR读取传感器，LB堆叠和两个覆盖区域中的第一导体层。在其制造过程中，GMR读取传感器，LB叠层和第一导体层依次沉积在底部间隙层上。沉积，曝光和显影单层光致抗蚀剂以便打开用于定义读取宽度的读取沟槽区域，然后施加RIE以去除读取沟槽区域中的第一导体层。在剥离单层光致抗蚀剂之后，将双层光致抗蚀剂沉积，曝光和显影以掩盖读取和覆盖区域，并且将第二导体层沉积在两个未掩模的侧面区域中。结果，消除了侧读，并且通过RIE清晰地定义了读宽度。

20. 发明申请

US20050174704A1 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process 失效
公开(公告)号：US20050174704A1
公开(公告)日：2005-08-11
申请号：US11064723
申请日：2005-02-23
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/012 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/32 , H01F41/30 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046
摘要： A giant magnetoresistance (GMR) magnetic head that includes a GMR read sensor with a stitched longitudinal bias (LB) stack. The GMR read sensor includes seed, pinning, pinned, spacer, sense and cap layers in a read region, and its seed and pinning layers are extended into two side regions. The LB stack is fabricated on the pinning layer in the two side regions and includes separation, seed and LB layers. The separation layer, preferably made of an amorphous film, separates the pinning layer from the seed and LB layers and thereby prevents unwanted crystalline effects of the pinning layer. Monolayer photoresist patterning and chemical mechanical polishing may be incorporated into the fabrication process of the GMR head to attain uniform thicknesses of the separation, seed and LB layers, and to align the midplane of the LB layer at the same horizontal level as the midplane of the sense layer.

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