专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US09136116B2 Method and system for formation of P-N junctions in gallium nitride based electronics 有权
标题翻译：在氮化镓基电子学中形成P-N结的方法和系统
公开(公告)号：US09136116B2
公开(公告)日：2015-09-15
申请号：US13198666
申请日：2011-08-04
申请人： David P. Bour , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Richard J. Brown , Mahdan Raj
发明人： David P. Bour , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Richard J. Brown , Mahdan Raj
IPC分类号： H01L21/20 , H01L21/02 , H01L29/66 , H01L29/861 , H01L29/808 , H01L29/20
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02579 , H01L21/02639 , H01L21/02647 , H01L21/2255 , H01L29/207 , H01L29/30 , H01L29/36 , H01L29/66204 , H01L29/8083 , H01L29/8611
摘要： A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.
摘要翻译：半导体器件包括具有第一导电类型的III族氮化物衬底和与III族氮化物衬底电耦合的第一电极。半导体器件还包括具有第二导电类型的III族氮化物材料，其在再生界面处与III族氮化物衬底耦合，并且p-n结设置在III族氮化物衬底和再生长界面之间。

12. 发明授权

US08822311B2 Method of fabricating a GaN P-i-N diode using implantation 有权
标题翻译：使用注入制造GaN P-i-N二极管的方法
公开(公告)号：US08822311B2
公开(公告)日：2014-09-02
申请号：US13335329
申请日：2011-12-22
申请人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Richard J. Brown , Donald R. Disney
发明人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Richard J. Brown , Donald R. Disney
IPC分类号： H01L29/20 , H01L29/24
CPC分类号： H01L29/868 , H01L29/0615 , H01L29/0649 , H01L29/2003 , H01L29/66204 , H01L29/66212 , H01L29/6631 , H01L29/66924
摘要： A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region.
摘要翻译： III族氮化物半导体器件包括用于在III族氮化物半导体器件的正向偏置操作期间支持电流的有源区域。有源区包括具有第一导电类型的第一III族氮化物外延材料和具有第二导电类型的第二III族氮化物外延材料。 III族氮化物半导体器件还包括物理地邻近有源区的边缘终端区，并且包括包含第一III族氮化物外延材料的一部分的注入区。第一III族氮化物外延材料的注入区域相对于与注入区域相邻的第一III族氮化物外延材料的部分具有降低的导电性。

13. 发明授权

US08778788B2 Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode 有权
标题翻译：制造氮化镓合并的P-i-N肖特基（MPS）二极管的方法
公开(公告)号：US08778788B2
公开(公告)日：2014-07-15
申请号：US13270625
申请日：2011-10-11
申请人： Andrew P. Edwards , Hui Nie , Isik C. Kizilyalli , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
发明人： Andrew P. Edwards , Hui Nie , Isik C. Kizilyalli , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
IPC分类号： H01L21/28
CPC分类号： H01L29/66143 , H01L21/046 , H01L21/0495 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region.
摘要翻译：半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。半导体结构还包括III族氮化物外延结构，其包括耦合到III族氮化物衬底的第一侧的第一III族氮化物外延层和多个第二导电类型的III族氮化物区域。多个III族氮化物区域在多个III族氮化物区域中的每一个之间具有至少一个第一导电类型的III族氮化物外延区域。半导体结构还包括电耦合到多个III族氮化物区域和至少一个III族氮化物外延区域中的一个或多个的第一金属结构。在第一金属结构和至少一个III族氮化物外延区之间产生肖特基接触。

14. 发明授权

US08643134B2 GaN-based Schottky barrier diode with field plate 有权
标题翻译：具有场板的GaN基肖特基势垒二极管
公开(公告)号：US08643134B2
公开(公告)日：2014-02-04
申请号：US13300028
申请日：2011-11-18
申请人： Madhan Raj , Richard J. Brown , Thomas R. Prunty , David P. Bour , Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano
发明人： Madhan Raj , Richard J. Brown , Thomas R. Prunty , David P. Bour , Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano
IPC分类号： H01L29/47
CPC分类号： H01L29/66143 , H01L29/0661 , H01L29/2003 , H01L29/402 , H01L29/66212 , H01L29/872
摘要： A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.
摘要翻译：一种制造III族氮化物半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的III族氮化物衬底，形成耦合到III族氮化物衬底的第一表面的III族氮化物外延层，以及去除所述III族氮化物外延层的至少一部分以形成第一暴露表面。该方法还包括形成耦合到第一暴露表面的电介质层，去除电介质层的至少一部分，以及形成耦合到电介质层的剩余部分的金属层，使得电介质层的剩余部分被布置在III族氮化物外延层和金属层之间。

15. 发明申请

US20130164893A1 FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH 失效
标题翻译：使用选择性重制的浮动护环的制造
公开(公告)号：US20130164893A1
公开(公告)日：2013-06-27
申请号：US13335355
申请日：2011-12-22
申请人： Linda Romano , David P. Bour , Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , Thomas R. Prunty
发明人： Linda Romano , David P. Bour , Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , Thomas R. Prunty
IPC分类号： H01L21/337 , H01L21/20
CPC分类号： H01L29/0619 , H01L29/0692 , H01L29/2003 , H01L29/404 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.
摘要翻译：一种用于制造氮化镓（GaN）材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底，形成耦合到n型GaN的第一表面的n型GaN外延层并且形成耦合到n型GaN外延层的生长掩模。该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分，以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

16. 发明申请

US20130087835A1 METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS 有权
标题翻译：用于在燃料材料中浮动护环的方法和系统
公开(公告)号：US20130087835A1
公开(公告)日：2013-04-11
申请号：US13270606
申请日：2011-10-11
申请人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
发明人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
IPC分类号： H01L29/808 , H01L21/20 , H01L21/337
CPC分类号： H01L29/66143 , H01L21/26546 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/08 , H01L29/2003 , H01L29/404 , H01L29/66083 , H01L29/66204 , H01L29/66212 , H01L29/66416 , H01L29/66924 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.
摘要翻译：半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。

17. 发明申请

US20130087803A1 MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE 审中-公开
标题翻译：单一组合HEMT和肖特基二极管
公开(公告)号：US20130087803A1
公开(公告)日：2013-04-11
申请号：US13267552
申请日：2011-10-06
申请人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
发明人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L27/0629 , H01L21/8252 , H01L27/0605 , H01L27/0688 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/872
摘要： An integrated device including a III-nitride HEMT and a Schottky diode includes a substrate comprising a first III-nitride material and a drift region comprising a second III-nitride material coupled to the substrate and disposed adjacent to the substrate along a vertical direction. The integrated device also includes a first barrier layer coupled to the drift region and a channel layer comprising a third III-nitride material having a first bandgap and coupled to the barrier layer. The integrated device further includes a second barrier layer characterized by a second bandgap and coupled to the channel layer and a Schottky contact coupled to the drift region. The second bandgap is greater than the first bandgap.
摘要翻译：包括III族氮化物HEMT和肖特基二极管的集成器件包括包括第一III族氮化物材料的衬底和包含耦合到衬底并沿着垂直方向邻近衬底设置的第二III族氮化物材料的漂移区域。集成器件还包括耦合到漂移区的第一阻挡层和包含第三III族氮化物材料的沟道层，该第三III族氮化物材料具有第一带隙并耦合到阻挡层。集成器件还包括第二阻挡层，其特征在于第二带隙并且耦合到沟道层和耦合到漂移区的肖特基接触。第二个带隙大于第一个带隙。

18. 发明申请

US20130032814A1 METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS 有权
标题翻译：在氮化镓电子中形成P-N结的方法与系统
公开(公告)号：US20130032814A1
公开(公告)日：2013-02-07
申请号：US13198666
申请日：2011-08-04
申请人： David P. Bour , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Richard J. Brown , Mahdan Raj
发明人： David P. Bour , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Richard J. Brown , Mahdan Raj
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/2003 , H01L21/0254 , H01L21/02579 , H01L21/02639 , H01L21/02647 , H01L21/2255 , H01L29/207 , H01L29/30 , H01L29/36 , H01L29/66204 , H01L29/8083 , H01L29/8611
摘要： A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.
摘要翻译：半导体器件包括具有第一导电类型的III族氮化物衬底和与III族氮化物衬底电耦合的第一电极。半导体器件还包括具有第二导电类型的III族氮化物材料，其在再生界面处与III族氮化物衬底耦合，并且p-n结设置在III族氮化物衬底和再生长界面之间。

19. 发明申请

US20130032811A1 METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE 有权
标题翻译：用于使用注射门的GAN垂直JFET的方法和系统
公开(公告)号：US20130032811A1
公开(公告)日：2013-02-07
申请号：US13198655
申请日：2011-08-04
申请人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
发明人： Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
IPC分类号： H01L29/808 , H01L29/20 , H01L21/337
CPC分类号： H01L29/8083 , H01L29/1066 , H01L29/1095 , H01L29/2003 , H01L29/66446 , H01L29/66909 , H01L29/66924
摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.
摘要翻译：垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料垂直方向场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。

20. 发明授权

US4013154A Mounting nut retention for fluid couplings 失效
标题翻译：流体联轴器的安装螺母保持力
公开(公告)号：US4013154A
公开(公告)日：1977-03-22
申请号：US629426
申请日：1975-11-06
申请人： Richard J. Brown
发明人： Richard J. Brown
IPC分类号： F16D35/00 , F16B7/18
CPC分类号： F16D35/00 , Y10T403/4682 , Y10T403/67 , Y10T403/7007
摘要： A mounting nut for a viscous fluid coupling. The nut is axially movable upon the input shaft of the coupling into engagement with a contact surface on the flange of the input shaft. Threads are provided on the nut for engagement with threads on a flange secured to the mounting shaft. The flange on the input shaft and the flange on the mounting shaft each have a flat surface perpendicular to the axis of rotation of the coupling. When the nut is threaded onto the flange on the mounting shaft the two flat surfaces are drawn together and forced into tight mating engagement. A key may be provided between the two flanges to ensure 1:1 rotation between the coupling and the mounting shaft.
摘要翻译：用于粘性流体联轴器的安装螺母。螺母在联轴器的输入轴上可轴向移动，与输入轴的凸缘上的接触表面接合。螺母设置在螺母上，用于与固定在安装轴上的法兰上的螺纹啮合。输入轴上的凸缘和安装轴上的凸缘均具有垂直于联轴器旋转轴线的平面。当螺母拧到安装轴的凸缘上时，两个平坦的表面被拉紧在一起并被迫紧密地配合。可以在两个凸缘之间提供钥匙，以确保联轴器和安装轴之间的1：1旋转。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式