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11. 发明授权

US08981876B2 Piezoelectric resonator structures and electrical filters having frame elements 有权
标题翻译：压电谐振器结构和具有框架元件的电过滤器
公开(公告)号：US08981876B2
公开(公告)日：2015-03-17
申请号：US11713726
申请日：2007-03-05
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
IPC分类号： H03H9/15 , H03H9/17 , H03H9/02 , H03H9/13 , H03H9/09
CPC分类号： H03H9/173 , H03H9/02118 , H03H9/13 , H03H9/177
摘要： Film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described.
摘要翻译：描述具有框架元件的膜体声波谐振器（FBAR）和包括谐振器的滤波器。

12. 发明授权

US08102044B2 Bonded wafer structure and method of fabrication 失效
标题翻译：粘合晶片结构和制造方法
公开(公告)号：US08102044B2
公开(公告)日：2012-01-24
申请号：US12254536
申请日：2008-10-20
申请人： Richard C. Ruby , James P. Roland , Frank S. Geefay
发明人： Richard C. Ruby , James P. Roland , Frank S. Geefay
IPC分类号： H01L23/12 , H01L21/00
CPC分类号： H03H9/0547 , B81B2201/0271 , B81C1/00333 , B81C2203/0118 , B81C2203/032 , H01L21/187 , H01L23/10 , H01L2924/0002 , H03H9/1014 , H01L2924/00
摘要： A method of packaging electronics comprises providing a first wafer and providing a second wafer. The method also comprises depositing a polymer material over a surface of the first wafer; and selectively removing a portion of the polymer from the first wafer to create a void in the polymer. The method also comprises placing the first wafer over the second wafer and in contact with the polymer; and curing the polymer to bond the first wafer to the second wafer. A bonded wafer structure is also described.
摘要翻译：包装电子器件的方法包括提供第一晶片并提供第二晶片。该方法还包括在第一晶片的表面上沉积聚合物材料; 并且从第一晶片选择性地去除聚合物的一部分以在聚合物中产生空隙。该方法还包括将第一晶片放置在第二晶片上并与聚合物接触; 并固化聚合物以将第一晶片结合到第二晶片。还描述了接合晶片结构。

13. 发明授权

US08080854B2 Electronic device on substrate with cavity and mitigated parasitic leakage path 失效
标题翻译：衬底上的电子器件具有空腔和减轻的寄生泄漏路径
公开(公告)号：US08080854B2
公开(公告)日：2011-12-20
申请号：US12341122
申请日：2008-12-22
申请人： R. Shane Fazzio , Richard C. Ruby , Christopher P. Wade , Michael Louis Frank , David A. Feld
发明人： R. Shane Fazzio , Richard C. Ruby , Christopher P. Wade , Michael Louis Frank , David A. Feld
IPC分类号： H01L29/78
CPC分类号： H03H9/02118 , H03H3/02 , H03H9/02125 , H03H9/172
摘要： An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.
摘要翻译：电子设备。电子器件包括第一电极和涂层。电子器件制造在衬底上; 衬底具有在衬底的顶表面中产生的空腔; 并且第一电极电耦合到衬底。涂层涂覆在空腔中的基底表面的至少一部分，并且涂层的存在导致在第一电极和在基底上制造的附加电极之间的至少一个寄生泄漏路径的减轻。

14. 发明申请

US20110237204A1 BULK ACOUSTIC RESONATOR STRUCTURE COMPRISING HYBRID ELECTRODES 有权
标题翻译：包含混合电极的大容量声学谐振器结构
公开(公告)号：US20110237204A1
公开(公告)日：2011-09-29
申请号：US12748640
申请日：2010-03-29
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
IPC分类号： H04B1/38 , H03H9/205
CPC分类号： H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.
摘要翻译：根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。第一电阻小于第二电阻。还公开了一种包括耦合谐振滤波器（CRF）的通信设备。

15. 发明申请

US20110047783A1 METHOD OF MANUFACTURING VERTICALLY SEPARATED ACOUSTIC FILTERS AND RESONATORS 审中-公开
标题翻译：制造垂直分离式声学滤波器和谐振器的方法
公开(公告)号：US20110047783A1
公开(公告)日：2011-03-03
申请号：US12942375
申请日：2010-11-09
申请人： Richard C. Ruby , John D. Larson, III
发明人： Richard C. Ruby , John D. Larson, III
IPC分类号： H04R31/00
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.
摘要翻译：公开了一种包括垂直分离的声谐振器的装置。该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

16. 发明授权

US07796957B2 Impedance transformation in a duplexer using a transmission line 失效
标题翻译：使用传输线的双工器中的阻抗变换
公开(公告)号：US07796957B2
公开(公告)日：2010-09-14
申请号：US11076615
申请日：2005-03-10
申请人： Richard C. Ruby , Paul Bradley , Michael L. Frank
发明人： Richard C. Ruby , Paul Bradley , Michael L. Frank
IPC分类号： H04B1/44
CPC分类号： H04B1/52
摘要： A duplexer having a filter and a transmission line that transforms an impedance of the filter to an impedance of an antenna.
摘要翻译：具有滤波器和将滤波器的阻抗变换为天线的阻抗的传输线的双工器。

17. 发明授权

US07629865B2 Piezoelectric resonator structures and electrical filters 有权
标题翻译：压电谐振器结构和电气滤波器
公开(公告)号：US07629865B2
公开(公告)日：2009-12-08
申请号：US11443954
申请日：2006-05-31
申请人： Richard C. Ruby
发明人： Richard C. Ruby
IPC分类号： H03H7/00
CPC分类号： H03H9/02118 , H03H9/132 , H03H9/174 , H03H9/564 , H03H9/585
摘要： Film bulk acoustic resonators (FBARs) stacked FBARs (SBARS) including at least two curved edges are disclosed.
摘要翻译：公开了包括至少两个弯曲边缘的薄膜体声共振器（FBAR）堆叠FBAR（SBARS）。

18. 发明授权

US07391285B2 Film acoustically-coupled transformer 有权
标题翻译：薄膜声耦合变压器
公开(公告)号：US07391285B2
公开(公告)日：2008-06-24
申请号：US10965637
申请日：2004-10-13
申请人： John D. Larson, III , Richard C. Ruby , Stephen L. Ellis
发明人： John D. Larson, III , Richard C. Ruby , Stephen L. Ellis
IPC分类号： H03H9/54
CPC分类号： H03H9/605 , H03H9/02102 , H03H9/132 , H03H9/175 , H03H9/584 , H03H9/587 , H03H9/589
摘要： One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
摘要翻译：薄膜声耦合变压器（FACT）的一个实施例包括具有下薄膜体声波谐振器（FBAR）的解耦堆叠体声波谐振器（DSBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，声解耦器包括声去耦材料层。每个FBAR具有相对的平面电极，它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。另一个实施例已经解耦了堆叠的体声波谐振器（DSBAR），每个如上所述，将第一电路互连到下FBAR，以及互连上FBAR的第二电路。 FACT提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，并将初级和次级电隔离。一些实施例另外电平衡。

19. 发明授权

US07358651B2 Apparatus and method for detecting a target environmental variable that employs film-bulk acoustic wave resonator oscillators 有权
标题翻译：用于检测使用膜 - 体声波谐振器振荡器的目标环境变量的装置和方法
公开(公告)号：US07358651B2
公开(公告)日：2008-04-15
申请号：US11109108
申请日：2005-04-18
申请人： Richard C. Ruby , Graham M. Flower , John D. Larson, III , Mark A. Unkrich
发明人： Richard C. Ruby , Graham M. Flower , John D. Larson, III , Mark A. Unkrich
IPC分类号： H01L41/08
CPC分类号： G01K11/265 , G01L1/165 , G01L9/0025 , H03H9/0542
摘要： An apparatus and method for detecting a target environmental variable (TEV). A first film-bulk acoustic resonator (FBAR) oscillator that includes a first FBAR with a first response to the target environmental variable generates a first frequency. A second film-bulk acoustic resonator (FBAR) oscillator that includes a second FBAR with a second response to the target environmental variable generates a second frequency. A circuit that is coupled to the first FBAR oscillator and the second FBAR oscillator determines the target environmental variable (e.g., changes in the TEV) based on the first frequency and the second frequency.
摘要翻译：一种用于检测目标环境变量（TEV）的装置和方法。包括对目标环境变量具有第一响应的第一FBAR的第一薄膜体声波谐振器（FBAR）振荡器产生第一频率。包括具有对目标环境变量的第二响应的第二FBAR的第二薄膜 - 体声波谐振器（FBAR）振荡器产生第二频率。耦合到第一FBAR振荡器和第二FBAR振荡器的电路基于第一频率和第二频率来确定目标环境变量（例如，TEV的变化）。

20. 发明授权

US07038559B2 Vertically separated acoustic filters and resonators 失效
公开(公告)号：US07038559B2
公开(公告)日：2006-05-02
申请号：US10785525
申请日：2004-02-23
申请人： Richard C. Ruby , John D. Larson, III
发明人： Richard C. Ruby , John D. Larson, III
IPC分类号： H03H9/54 , H03H9/05 , H03H9/09
CPC分类号： H03H9/605 , H03H9/587 , H03H9/60 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

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