专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07376259B1 Topography compensation of imprint lithography patterning 失效
标题翻译：压印光刻图案的地形补偿
公开(公告)号：US07376259B1
公开(公告)日：2008-05-20
申请号：US10874499
申请日：2004-06-23
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G06K9/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及修改压印掩模的系统和方法。本发明的一个方面产生反馈信息，其通过使用散射测量系统来检测地形变化和减小压印掩模特征高度以便补偿地形变化，从而有助于控制印迹掩模特征高度。

12. 发明授权

US08007631B2 System and method for imprint lithography to facilitate dual damascene integration with two imprint acts 有权
标题翻译：用于压印光刻的系统和方法，以促进双重镶嵌与两个印记动作的整合
公开(公告)号：US08007631B2
公开(公告)日：2011-08-30
申请号：US11741991
申请日：2007-04-30
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： C23C10/00 , C29C59/02 , C03C17/22
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译：提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。

13. 发明授权

US07384569B1 Imprint lithography mask trimming for imprint mask using etch 有权
标题翻译：使用蚀刻的压印掩模的压印光刻掩模修剪
公开(公告)号：US07384569B1
公开(公告)日：2008-06-10
申请号：US10909464
申请日：2004-08-02
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G01L21/30 , H01L21/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed are photolithographic systems and methods, and more particularly systems and methodologies that enhance imprint mask feature resolution. An aspect generates feedback information that facilitates control of imprint mask feature size and resolution via employing a scatterometry system to detect resolution enhancement need, and decreasing imprint mask feature size and increasing resolution of the imprint mask via a trim etch procedure.
摘要翻译：公开了光刻系统和方法，更具体地说，增强了印迹掩模特征分辨率的系统和方法。方面产生反馈信息，其通过采用散射测量系统来检测分辨率增强需求，以及通过修剪蚀刻程序减小压印掩模特征尺寸并增加印迹掩模的分辨率，从而有助于控制印迹掩模特征尺寸和分辨率。

14. 发明申请

US20070283883A1 SYSTEM AND METHOD FOR IMPRINT LITHOGRAPHY TO FACILITATE DUAL DAMASCENE INTEGRATION WITH TWO IMPRINT ACTS 有权
标题翻译：系统和方法，用于绘制两幅印刷动画的双重增强整合
公开(公告)号：US20070283883A1
公开(公告)日：2007-12-13
申请号：US11741991
申请日：2007-04-30
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： C23C10/00
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译：提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。

15. 发明授权

US07235474B1 System and method for imprint lithography to facilitate dual damascene integration with two imprint acts 有权
标题翻译：用于压印光刻的系统和方法，以促进双重镶嵌与两个印记动作的整合
公开(公告)号：US07235474B1
公开(公告)日：2007-06-26
申请号：US10838612
申请日：2004-05-04
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： H01L21/44
CPC分类号： H01L21/76817 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31144 , H01L21/76811
摘要： A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
摘要翻译：提供了一种系统和方法来促进与两个印记动作的双镶嵌互连集成。该方法提供了一对包含要印制的双镶嵌图案的半透明压印模具。该对的第一压印模具包含双镶嵌图案的通孔特征，并且该对的第二压印模具包含沟槽特征。通孔特征压印模具与沉积在沉积在基板的电介质层上的第一转印层上的第一成像层接触。沟槽特征压印模具与沉积在沉积在基板的第一成像层上的第二转印层上的第二成像层接触。当每个成像层暴露于照明源时，它将以匹配相应压印模具的特征的结构固化。一系列蚀刻将来自第一成像层的通孔特征与来自第二成像层的沟槽结合，以在介电层内形成双镶嵌开口。

16. 发明授权

US07052921B1 System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process 有权
标题翻译：使用原位散射法在光刻过程中检测光致抗蚀剂图案完整性的系统和方法
公开(公告)号：US07052921B1
公开(公告)日：2006-05-30
申请号：US10934192
申请日：2004-09-03
申请人： Marina V. Plat , Bhanwar Singh , Calvin T. Gabriel , Christopher F. Lyons , Scott A. Bell , Ramkumar Subramanian , Srikanteswara Dakshina-Murthy
发明人： Marina V. Plat , Bhanwar Singh , Calvin T. Gabriel , Christopher F. Lyons , Scott A. Bell , Ramkumar Subramanian , Srikanteswara Dakshina-Murthy
IPC分类号： H01L21/66
CPC分类号： G03F7/70625 , G03F7/70608 , H01L22/12
摘要： The present invention uses in situ scatterometry to determine if a defect (e.g., photoresist erosion, photoresist bending and pattern collapse) is present on a wafer. In one embodiment, in situ scatterometry is used to detect a pattern integrity defect associated with the layer of photoresist. In situ scatterometry produces diffraction data associated with the thickness of the photoresist patterned mask. This data is compared to a model of diffraction data associated with a suitable photoresist thickness. If the measured diffraction data is within an acceptable range, the next step of the photolithography process is carried out. However, if the measured thickness is outside of the suitable range, a defect is detected, and the wafer may be sent for re-working or re-patterned prior to main etch, thereby preventing unnecessary wafer scrap. Another aspect of the present invention allows for a feedback control mechanism to alter a physical parameter of the photolithographic process based upon the in situ scatterometry measurements.
摘要翻译：本发明使用原位散射法来确定晶片上是否存在缺陷（例如，光致抗蚀剂侵蚀，光致抗蚀剂弯曲和图案崩溃）。在一个实施例中，原位散射法用于检测与光致抗蚀剂层相关联的图案完整性缺陷。原位散射法产生与光致抗蚀剂图案掩模的厚度相关的衍射数据。将该数据与与合适的光致抗蚀剂厚度相关联的衍射数据的模型进行比较。如果测量的衍射数据在可接受的范围内，则进行光刻工艺的下一步骤。然而，如果测量的厚度在合适的范围之外，则检测到缺陷，并且可以在主蚀刻之前将晶片发送用于再加工或重新图案化，从而防止不必要的晶片废料。本发明的另一方面允许反馈控制机制基于原位散射测量来改变光刻工艺的物理参数。

17. 发明授权

US07187796B1 Systems and methods that employ exposure compensation to provide uniform CD control on reticle during fabrication 失效
标题翻译：使用曝光补偿的系统和方法在制造过程中对掩模版提供均匀的CD控制
公开(公告)号：US07187796B1
公开(公告)日：2007-03-06
申请号：US10676613
申请日：2003-10-01
申请人： Khoi A. Phan , Ramkumar Subramanian , Bhanwar Singh
发明人： Khoi A. Phan , Ramkumar Subramanian , Bhanwar Singh
IPC分类号： G06K9/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174
摘要： The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is complete, an inspection can be performed on the reticle to determine whether any parameters during fabrication and/or any data points are outside of acceptable tolerances. The data is collected and fed into an algorithm (e.g. data-mining algorithm) utilized to determine which fabrication parameters need to be modified then sends the data to a control system (e.g. advanced process control) to facilitate needed changes to the fabrication parameters.
摘要翻译：本发明涉及监测和控制掩模版制造工艺（例如采用电子束光刻工艺）。典型的制造过程涉及离散阶段，包括曝光，曝光后烘烤和显影。制造完成后，可以对掩模版进行检查，以确定制造期间和/或任何数据点中的任何参数是否超出可接受的公差。收集数据并将其馈送到用于确定哪些制造参数需要被修改的算法（例如数据挖掘算法）中，然后将数据发送到控制系统（例如高级过程控制），以便于对制造参数的所需改变。

18. 发明授权

US06999254B1 Refractive index system monitor and control for immersion lithography 有权
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06999254B1
公开(公告)日：2006-02-14
申请号：US10967845
申请日：2004-10-18
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G02B7/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

19. 发明授权

US06809793B1 System and method to monitor reticle heating 有权
标题翻译：监控标线加热的系统和方法
公开(公告)号：US06809793B1
公开(公告)日：2004-10-26
申请号：US10050456
申请日：2002-01-16
申请人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
发明人： Khoi A. Phan , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan
IPC分类号： G03B2752
CPC分类号： G03F7/70558 , G03F7/70875
摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.
摘要翻译：公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

20. 发明授权

US06507474B1 Using localized ionizer to reduce electrostatic charge from wafer and mask 有权
标题翻译：使用局部电离器来减少晶片和掩模的静电电荷
公开(公告)号：US06507474B1
公开(公告)日：2003-01-14
申请号：US09597126
申请日：2000-06-19
申请人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bryan K. Choo , Bharath Rangarajan
发明人： Bhanwar Singh , Ramkumar Subramanian , Khoi A. Phan , Bryan K. Choo , Bharath Rangarajan
IPC分类号： H01T2300
CPC分类号： G03F7/70616 , G03F7/70941
摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.
摘要翻译：本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式