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    • 15. 发明授权
    • Apparatus for delivering ultra-low particle counts in semiconductor manufacturing
    • 用于在半导体制造中提供超低粒子计数的装置
    • US06312597B1
    • 2001-11-06
    • US08568595
    • 1995-12-01
    • Raj MohindraAbhay K. BhushanRajiv BhushanSuraj Puri
    • Raj MohindraAbhay K. BhushanRajiv BhushanSuraj Puri
    • B08B310
    • H01L21/02052H01L21/67028Y10S134/902Y10S210/90
    • The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit, a local water filter bank, a local gas filtering system, an H2O2 injection unit, an auxiliary chemical injection unit, and a controller for operating the other components. The water filter bank provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H2O2 injection unit provides a local source of H2O2 to clean the filter and rinser and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit provides a chemical additive to the rinsing unit to enhance the wafer cleaning process. The gas filtering system provides clean gas to the rinsing unit and to the injection units. The clean gas provides a clean atmosphere over the chemicals in each injection unit, and over the water in the rinser.
    • 本发明涉及一种用于在不引入污染物的情况下漂洗化学品和离开晶片的颗粒的晶片冲洗系统。 该系统通过过滤在湿式工作台漂洗期间使用的水和气体来减少晶片上的颗粒数。 该系统包括冲洗单元,局部水过滤器组,局部气体过滤系统,H 2 O 2注入单元,辅助化学品注入单元和用于操作其它组件的控制器。 水过滤器组提供了一个多级过滤系统,以消除颗粒物而不会明显下降水压。 H 2 O 2注入单元提供H 2 O 2的局部源以清洁过滤器和冲洗器,并提供用于在冲洗期间控制晶片上的天然氧化物形成的机制。 辅助化学品注入单元为冲洗单元提供化学添加剂以增强晶片清洗过程。 气体过滤系统为冲洗单元和注射单元提供清洁的气体。 清洁气体在每个注射单元中的化学品和冲洗器中的水中提供清洁的气氛。
    • 16. 发明授权
    • Method and apparatus for delivering ultra-low particle counts in
semiconductor manufacturing
    • 用于在半导体制造中提供超低粒子计数的方法和装置
    • US5651379A
    • 1997-07-29
    • US566302
    • 1995-12-01
    • Raj MohindraAbhay K. BhushanRajiv BhushanSuraj Puri
    • Raj MohindraAbhay K. BhushanRajiv BhushanSuraj Puri
    • B08B3/10B01D35/02B01D35/06B03C5/00B03C5/02H01L21/00H01L21/304H01L21/306B08B3/04
    • H01L21/02052H01L21/67028Y10S134/902Y10S210/90
    • The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit, a local water filter bank, a local gas filtering system, an H.sub.2 O.sub.2 injection unit, an auxiliary chemical injection unit, and a controller for operating the other components. The water filter bank provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H.sub.2 O.sub.2 injection unit provides a local source of H.sub.2 O.sub.2 to clean the filter and rinser and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit provides a chemical additive to the rinsing unit to enhance the wafer cleaning process. The gas filtering system provides clean gas to the rinsing unit and to the injection units. The clean gas provides a clean atmosphere over the chemicals in each injection unit, and over the water in the rinser.
    • 本发明涉及一种用于在不引入污染物的情况下漂洗化学品和离开晶片的颗粒的晶片冲洗系统。 该系统通过过滤在湿式工作台漂洗期间使用的水和气体来减少晶片上的颗粒数。 该系统包括冲洗单元,局部水过滤器组,局部气体过滤系统,H 2 O 2注入单元,辅助化学品注入单元和用于操作其它组件的控制器。 水过滤器组提供了一个多级过滤系统,以消除颗粒物而不会明显下降水压。 H 2 O 2注入单元提供H 2 O 2的局部源以清洁过滤器和冲洗器,并提供用于在冲洗期间控制晶片上的天然氧化物形成的机制。 辅助化学品注入单元为冲洗单元提供化学添加剂以增强晶片清洗过程。 气体过滤系统为冲洗单元和注射单元提供清洁的气体。 清洁气体在每个注射单元中的化学品和冲洗器中的水中提供清洁的气氛。
    • 17. 发明授权
    • Apparatus for delivering ultra-low particle counts in semiconductor
manufacturing
    • 用于在半导体制造中提供超低粒子计数的装置
    • US5542441A
    • 1996-08-06
    • US285316
    • 1994-08-03
    • Raj MohindraAbhay K. BhushanRajiv BhushanSuraj Puri
    • Raj MohindraAbhay K. BhushanRajiv BhushanSuraj Puri
    • B08B3/10B01D35/02B01D35/06B03C5/00B03C5/02H01L21/00H01L21/304H01L21/306B08B3/04
    • H01L21/02052H01L21/67028Y10S134/902Y10S210/90
    • The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit, a local water filter bank, a local gas filtering system, an H.sub.2 O.sub.2 injection unit, an auxiliary chemical injection unit, and a controller for operating the other components. The water filter bank provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H.sub.2 O.sub.2 injection unit provides a local source of H.sub.2 O.sub.2 to clean the filter and rinser and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit provides a chemical additive to the rinsing unit to enhance the wafer cleaning process. The gas filtering system provides clean gas to the rinsing unit and to the injection units. The clean gas provides a clean atmosphere over the chemicals in each injection unit, and over the water in the rinser.
    • 本发明涉及一种用于在不引入污染物的情况下漂洗化学品和离开晶片的颗粒的晶片冲洗系统。 该系统通过过滤在湿式工作台漂洗期间使用的水和气体来减少晶片上的颗粒数。 该系统包括冲洗单元,局部水过滤器组,局部气体过滤系统,H 2 O 2注入单元,辅助化学品注入单元和用于操作其它组件的控制器。 水过滤器组提供了一个多级过滤系统,以消除颗粒物而不会明显下降水压。 H 2 O 2注入单元提供H 2 O 2的局部源以清洁过滤器和冲洗器,并提供用于在冲洗期间控制晶片上的天然氧化物形成的机制。 辅助化学品注入单元为冲洗单元提供化学添加剂以增强晶片清洗过程。 气体过滤系统为冲洗单元和注射单元提供清洁的气体。 清洁气体在每个注射单元中的化学品和冲洗器中的水中提供清洁的气氛。
    • 19. 发明授权
    • Method for cleaning objects using a fluid charge
    • 使用流体充电清洁物体的方法
    • US6045621A
    • 2000-04-04
    • US179540
    • 1998-10-26
    • Suraj PuriRaj Mohindra
    • Suraj PuriRaj Mohindra
    • B08B3/04G11B23/50H01L21/00
    • H01L21/67028B08B3/04G11B23/505Y10S134/902
    • A method for cleaning an object. The method (400) includes immersing (420) an object in a liquid comprising water, which can be ultra-clean. The object has a front face, a back face, and an edge. The method includes providing (450) a cleaning enhancement substance (e.g., trace amount of polar organic compound, surfactant, ammonia bearing compound) into the liquid. In one embodiment, the cleaning enhancement substance can form a liquid film, such as a monolayer overlying an upper surface or level of the liquid. The method also includes providing a substantially particle free environment (e.g., ultra-clean gas, ultra-clean non-reactive gas) adjacent to the front face and the back face of the object as the liquid including the cleaning enhancement substance is being removed.
    • 清洁物体的方法。 方法(400)包括将物体浸入(420)包含水的液体中,其可以是超洁净的。 该物体具有前表面,后表面和边缘。 该方法包括向液体中提供(450)清洁增强物质(例如痕量的极性有机化合物,表面活性剂,含氨化合物)。 在一个实施方案中,清洁增强物质可以形成液膜,例如覆盖在液体的上表面或水平上的单层。 该方法还包括当除去包括清洁增强物质的液体时,提供与物体的正面和背面相邻的基本上无颗粒的环境(例如,超洁净气体,超清洁非反应性气体)。