专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06717178B2 Semiconductor devices fabricated using sputtered silicon targets 失效
标题翻译：使用溅射硅靶制造的半导体器件
公开(公告)号：US06717178B2
公开(公告)日：2004-04-06
申请号：US10218744
申请日：2002-08-13
申请人： Yukihiko Nakata , Apostolos Voutsas , John Hartzell
发明人： Yukihiko Nakata , Apostolos Voutsas , John Hartzell
IPC分类号： H01L2904
CPC分类号： H01L21/02631 , C23C14/3414 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A thin film transistor includes an active silicon layer deposited by physical vapor deposition (PVD), wherein a silicon precursor is doped with impurities prior to use as a target in the PVD chamber, wherein the precursor has a resistivity in the range of about 0.5 &OHgr;-cm
摘要翻译：薄膜晶体管包括通过物理气相沉积（PVD）沉积的活性硅层，其中硅前体在用作PVD室中的靶之前掺杂有杂质，其中前体具有约0.5Ω的电阻率 -cm

12. 发明授权

US06432804B1 Sputtered silicon target for fabrication of polysilicon thin film transistors 有权
标题翻译：用于制造多晶硅薄膜晶体管的溅射硅靶
公开(公告)号：US06432804B1
公开(公告)日：2002-08-13
申请号：US09576939
申请日：2000-05-22
申请人： Yukihiko Nakata , Apostolos Voutsas , John Hartzell
发明人： Yukihiko Nakata , Apostolos Voutsas , John Hartzell
IPC分类号： H01L213205
CPC分类号： H01L21/02631 , C23C14/3414 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of forming a thin film device includes preparing a substrate; forming a silicon target having predetermined impurities therein; depositing a layer of amorphous silicon by physical vapor deposition from the target; and crystallizing the amorphous silicon layer to form a polysilicon layer. The method of the invention is particularly suited to the formation of thin film transistors and liquid crystal displays incorporating thin film transistors.
摘要翻译：形成薄膜器件的方法包括制备衬底; 在其中形成具有预定杂质的硅靶; 通过物理气相沉积从靶上沉积一层非晶硅; 并使非晶硅层结晶以形成多晶硅层。本发明的方法特别适用于形成薄膜晶体管和结合薄膜晶体管的液晶显示器。

13. 发明申请

US20050179086A1 Structures with seeded single-crystal domains 有权
标题翻译：具有种子单晶畴的结构
公开(公告)号：US20050179086A1
公开(公告)日：2005-08-18
申请号：US11101741
申请日：2005-04-07
申请人： Apostolos Voutsas , John Hartzell
发明人： Apostolos Voutsas , John Hartzell
IPC分类号： C30B1/00 , C30B1/08 , H01L27/01
CPC分类号： B82Y30/00 , C30B1/00 , C30B1/08 , C30B29/06
摘要： Single-crystal devices and a method for forming semiconductor film single-crystal domains are provided. The method comprises: forming a substrate, such as glass or Si; forming an insulator film overlying the substrate; forming a single-crystal seed overlying the substrate and insulator; forming an amorphous film overlying the seed; annealing the amorphous film; and, forming a single-crystal domain in the film responsive to the single-crystal seed. The annealing technique can be (conventional) laser annealing, a laser induced lateral growth (LiLAC) process, or conventional furnace annealing. In some aspects, forming a single-crystal seed includes forming a nanowire or a self assembled monolayer (SAM). For example, a Si nanowire can be formed having a crystallographic orientation of or . When, the seed has a crystallographic orientation, then an n-type TFT can be formed. Likewise, when a single-crystal seed has a crystallographic orientation, a p-type TFT can be formed.
摘要翻译：提供单晶器件和形成半导体膜单晶畴的方法。该方法包括：形成诸如玻璃或Si的衬底; 形成覆盖在基板上的绝缘膜; 形成覆盖衬底和绝缘体的单晶种子; 形成覆盖种子的无定形膜; 退火非晶膜; 并且响应于单晶种子在膜中形成单晶畴。退火技术可以是（常规）激光退火，激光诱导横向生长（LiLAC）工艺或常规炉退火。在一些方面，形成单晶种子包括形成纳米线或自组装单层（SAM）。例如，可以形成具有<110>或<100>的晶体取向的Si纳米线。当种子具有<100>晶体取向时，则可以形成n型TFT。同样，当单晶种子具有<110>结晶取向时，可以形成p型TFT。

14. 发明申请

US20050136695A1 Thin film oxide interface 失效
标题翻译：薄膜氧化物界面
公开(公告)号：US20050136695A1
公开(公告)日：2005-06-23
申请号：US11046571
申请日：2005-01-28
申请人： Pooran Joshi , John Hartzell , Masahiro Adachi , Yoshi Ono
发明人： Pooran Joshi , John Hartzell , Masahiro Adachi , Yoshi Ono
IPC分类号： H01L21/316 , H01L21/336 , H01L29/49 , H01L29/786 , H01L23/58 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/66772
摘要： An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
摘要翻译：提供氧化物界面和制造氧化物界面的方法。该方法包括形成硅层和覆盖硅层的氧化物层。使用电感耦合等离子体源在低于400℃的温度下形成氧化物层。在该方法的一些方面，氧化物层的厚度大于20纳米（nm），折射率在1.45和1.47之间。在该方法的一些方面，通过等离子体氧化硅层形成氧化物层，以每分钟高达约4.4nm的速率产生等离子体氧化物（1分钟后）。在该方法的某些方面，使用高密度等离子体增强化学气相沉积（HD-PECVD）工艺来形成氧化物层。在该方法的一些方面，将硅和氧化物层结合到薄膜晶体管中。

15. 发明授权

US09422950B2 Floating optical sensor mount 有权
标题翻译：浮动光学传感器座
公开(公告)号：US09422950B2
公开(公告)日：2016-08-23
申请号：US14000351
申请日：2012-02-21
申请人： John Hartzell , James Cirillo , Dustin Hromyak , Hung phi Nguyen , David B. Crowley , Michael A. Laurich
发明人： John Hartzell , James Cirillo , Dustin Hromyak , Hung phi Nguyen , David B. Crowley , Michael A. Laurich
IPC分类号： F01B25/26 , F15B15/00 , F15B15/28
CPC分类号： F15B15/00 , F15B15/2846 , F15B15/2892 , G01D11/30 , Y10T29/49002
摘要： A piston-cylinder actuator includes a unique mount for an absolute-position sensor. The mount is made from a bearing material provides a flexible connection between the sensor mount and the cylinder housing. This flexible connection allows the piston rod to deflect naturally, under its own weight or under other laterally-directed forces, while maintaining the distance and perpendicularity between the sensor and the rod surface, within acceptable limits. The sensor mount is made from a bearing material that will allow it to float directly on the rod surface without scuffing or otherwise damaging the rod surface, particularly the markings or other indicia on that surface. Due to the flexible connection between the sensor mount and the cylinder housing, the proper distance between the sensor and the rod surface can be maintained at all times.
摘要翻译：活塞气缸致动器包括用于绝对位置传感器的独特安装。安装座由轴承材料制成，在传感器支架和气缸壳体之间提供灵活的连接。这种柔性连接允许活塞杆在其自身重量下或在其它侧向力下自然偏转，同时保持传感器和杆表面之间的距离和垂直度在可接受的限度内。传感器支架由轴承材料制成，可使其直接在杆表面上浮动，而不会磨损或以其他方式损坏杆表面，特别是该表面上的标记或其他标记。由于传感器支架和气缸壳体之间的灵活连接，传感器和杆表面之间的适当距离可以始终保持。

16. 发明申请

US20130319224A1 FLOATING OPTICAL SENSOR MOUNT 有权
标题翻译：浮动光学传感器安装
公开(公告)号：US20130319224A1
公开(公告)日：2013-12-05
申请号：US14000351
申请日：2012-02-21
申请人： John Hartzell , James Cirillo , Dustin Hromyak , Hung phi Nguyen , David B. Crowley , Michael A. Laurich
发明人： John Hartzell , James Cirillo , Dustin Hromyak , Hung phi Nguyen , David B. Crowley , Michael A. Laurich
IPC分类号： F15B15/00
CPC分类号： F15B15/00 , F15B15/2846 , F15B15/2892 , G01D11/30 , Y10T29/49002
摘要： A piston-cylinder actuator includes a unique mount for an absolute-position sensor. The mount is made from a bearing material provides a flexible connection between the sensor mount and the cylinder housing. This flexible connection allows the piston rod to deflect naturally, under its own weight or under other laterally-directed forces, while maintaining the distance and perpendicularity between the sensor and the rod surface, within acceptable limits. The sensor mount is made from a bearing material that will allow it to float directly on the rod surface without scuffing or otherwise damaging the rod surface, particularly the markings or other indicia on that surface. Due to the flexible connection between the sensor mount and the cylinder housing, the proper distance between the sensor and the rod surface can be maintained at all times.
摘要翻译：活塞气缸致动器包括用于绝对位置传感器的独特安装。安装座由轴承材料制成，在传感器支架和气缸壳体之间提供灵活的连接。这种柔性连接允许活塞杆在其自身重量下或在其它侧向力下自然偏转，同时保持传感器和杆表面之间的距离和垂直度在可接受的限度内。传感器支架由轴承材料制成，可使其直接在杆表面上浮动，而不会磨损或以其他方式损坏杆表面，特别是该表面上的标记或其他标记。由于传感器支架和气缸壳体之间的灵活连接，传感器和杆表面之间的适当距离可以始终保持。

17. 发明申请

US20070278600A1 Piezo-diode cantilever MEMS 有权
标题翻译：压电二极管悬臂MEMS
公开(公告)号：US20070278600A1
公开(公告)日：2007-12-06
申请号：US11717231
申请日：2007-03-13
申请人： Changqing Zhan , Paul Schuele , John Conley , John Hartzell
发明人： Changqing Zhan , Paul Schuele , John Conley , John Hartzell
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译：提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。该方法沉积覆盖在基底上的薄膜。基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子的薄膜材料。悬臂梁由薄膜形成，二极管嵌入悬臂梁。二极管由与悬臂梁共用的薄膜制成。共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。

18. 发明申请

US20070023851A1 MEMS pixel sensor 有权
标题翻译： MEMS像素传感器
公开(公告)号：US20070023851A1
公开(公告)日：2007-02-01
申请号：US11516473
申请日：2006-09-06
申请人： John Hartzell , Changqing Zhan , Michael Wolfson
发明人： John Hartzell , Changqing Zhan , Michael Wolfson
IPC分类号： H01L29/66
CPC分类号： G01L1/18 , B81C1/00246 , G01L1/16 , H01L27/12 , H01L27/20 , H04R17/02 , H04R19/00 , H04R31/00 , H04R2499/11
摘要： A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts the mechanical state into electrical signals. A pixel interface supplies power to the electronic device and transceives electrical signals. The sensor is able to operate dynamically, in real-time. For example, if the mechanical device undergoes a sequence of mechanical states at a corresponding plurality of times, the electronic device is able to supply a sequence of electrical signals to the pixel interface that are responsive to the sequence of mechanical states, at the plurality of times. Each MEMS pixel sensor may include a number of mechanical devices, and corresponding electronic devices, to provide redundancy or to measure a broadband response range.
摘要翻译： MEMS像素传感器设置有具有机械体的薄膜机械装置，其具有响应于邻近环境的机械状态。薄膜电子设备将机械状态转换为电信号。像素接口为电子设备供电并收发电信号。该传感器能够实时动态地运行。例如，如果机械装置在相应的多次经历了一系列机械状态，那么电子装置能够在多个时刻向像素接口提供响应于机械状态序列的电信号序列次每个MEMS像素传感器可以包括多个机械装置和相应的电子装置，以提供冗余或测量宽带响应范围。

19. 发明申请

US20070287233A1 Piezo-TFT cantilever MEMS fabrication 有权
标题翻译：压电薄膜悬臂MEMS制造
公开(公告)号：US20070287233A1
公开(公告)日：2007-12-13
申请号：US11818716
申请日：2007-06-15
申请人： Changqing Zhan , Michael Wolfson , John Hartzell
发明人： Changqing Zhan , Michael Wolfson , John Hartzell
IPC分类号： H01L21/339
CPC分类号： B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81C1/00246 , B81C2203/075 , C30B1/02 , C30B29/00 , G01L1/044 , G01L9/0042 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L27/12 , H01L29/66757 , H04R17/02 , H04R31/006
摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.
摘要翻译：提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

20. 发明申请

US20060211162A1 Crystal-structure-processed devices, methods and systems for making 有权
标题翻译：水晶结构处理设备，制作方法和系统
公开(公告)号：US20060211162A1
公开(公告)日：2006-09-21
申请号：US11227843
申请日：2005-09-14
申请人： John Hartzell
发明人： John Hartzell
IPC分类号： H01L21/00
CPC分类号： B81C1/00 , C30B13/00 , C30B35/00
摘要： Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a selected material whose internal crystalline structure becomes appropriately changed thereby to establish the desired mechanical properties for a created device.
摘要翻译：加工和系统创建，以及与之相关的产品，非常小尺寸的奇异或单片阵列的机械装置。相对于其内部晶体结构变得适当变化的选定材料进行激光处理，从而建立所创造的器件的期望的机械性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式