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    • 11. 发明申请
    • Methods and apparatuses for processing biological data
    • 用于处理生物数据的方法和装置
    • US20070005254A1
    • 2007-01-04
    • US10574382
    • 2005-04-02
    • Erik NilssonBrian Pratt
    • Erik NilssonBrian Pratt
    • G06F19/00
    • G01N30/8651G01N30/463
    • Methods and apparatuses are described to process an n-dimensional data set acquired from a measurement on a biological sample. A method includes dividing an n-dimensional data set into n-dimensional sub-regions, wherein a size of a dimension of an n-dimensional sub-region is less than a size of the dimension of the n-dimensional data set. The n-dimensional sub-regions are stored on a computer readable medium and the computer readable medium is accessible to a data processing system. The n-dimensional data set can exceed an addressable memory limit of the data processing system and mathematical operations are performed on the n-dimensional data set.
    • 描述了用于处理从生物样品上的测量获取的n维数据集的方法和装置。 一种方法包括将n维数据集划分为n维子区域,其中n维子区域的维度的大小小于n维数据集的维度的大小。 n维子区域存储在计算机可读介质上,并且计算机可读介质可被数据处理系统访问。 n维数据集可以超过数据处理系统的可寻址存储器限制,并且对n维数据集执行数学运算。
    • 12. 发明申请
    • Method for Manufacturing a Superjunction Device With Wide Mesas
    • 制造具有宽台面的超级连接装置的方法
    • US20060205174A1
    • 2006-09-14
    • US11420490
    • 2006-05-26
    • Fwu-Iuan HshiehKoon SoBrian Pratt
    • Fwu-Iuan HshiehKoon SoBrian Pratt
    • H01L21/76
    • H01L29/7802H01L21/26586H01L29/0634H01L29/0653H01L29/66143H01L29/66712H01L29/66734H01L29/7811H01L29/7813H01L29/872H01L2924/0002H01L2924/00
    • A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly implanting a dopant of a second conductivity into the second sidewall. The at least one mesa is converted to a pillar by diffusing the dopants into the at least one mesa. The pillar is then converted to a column by angularly implanting a dopant of the first conductivity into a first sidewall of the pillar, and by angularly implanting the dopant of the first conductivity type into a second sidewall of the pillar. The dopants are then diffused into the pillar to provide a P-N junction of the first and second doped regions located along the depth direction of the adjoining trench. Finally, the trenches are filled with an insulating material.
    • 制造半导体器件的方法包括提供具有沟槽和台面的半导体衬底。 至少一个台面具有第一和第二侧壁。 该方法包括将第二导电性的掺杂剂角度地注入到第一侧壁中,并将第二导电性的掺杂剂角度地注入第二侧壁。 通过将掺杂剂扩散到至少一个台面中,将至少一个台面转变成柱。 然后通过将第一导电性的掺杂剂角度地注入到柱的第一侧壁中,并且将第一导电类型的掺杂剂角度地注入到柱的第二侧壁中,将柱转换成列。 然后将掺杂剂扩散到柱中以提供沿相邻沟槽的深度方向定位的第一和第二掺杂区的P-N结。 最后,沟槽填充绝缘材料。