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11. 发明申请

US20070227656A1 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US20070227656A1
公开(公告)日：2007-10-04
申请号：US11395881
申请日：2006-03-31
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Michael Ravkin , John Larios
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Michael Ravkin , John Larios
IPC分类号： H01L21/461 , H01L21/306
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

12. 发明申请

US20070119477A1 Method and Apparatus for Semiconductor Wafer Cleaning Using High-Frequency Acoustic Energy with Supercritical Fluid 有权
标题翻译：使用超临界流体使用高频声能的半导体晶片清洗的方法和装置
公开(公告)号：US20070119477A1
公开(公告)日：2007-05-31
申请号：US11670631
申请日：2007-02-02
申请人： Fred Redecker , John Boyd , John Parks
发明人： Fred Redecker , John Boyd , John Parks
IPC分类号： B08B3/12 , B08B6/00 , C23G1/00
CPC分类号： B08B3/12 , B08B7/0021 , H01L21/67057 , Y10S134/902
摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.
摘要翻译：提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

13. 发明申请

US20070095073A1 Linear compressor controller 有权
标题翻译：线性压缩机控制器
公开(公告)号：US20070095073A1
公开(公告)日：2007-05-03
申请号：US11393225
申请日：2006-03-30
申请人： Zhuang Tian , John Boyd
发明人： Zhuang Tian , John Boyd
IPC分类号： F25B9/00 , F25B49/00
CPC分类号： F25B49/022 , F04B35/045 , F04B2201/0206 , F25B2400/073
摘要： A free-piston linear compressor (1) controlled to achieve high volumetric efficiency by a controller including an algorithm (116) for ramping up input power until piston-cylinder head collisions are detected using a detection algorithm (117/118) which then decrements power input whereupon input power is again ramped up by algorithm (116). Non-damaging low energy collisions are achieved by the controller including a perturbation algorithm (119) which perturbates the input power ramp with periodic transient pulses of power to ensure piston collisions are provoked during the transient power pulses.
摘要翻译：一个自由活塞线性压缩机（1）通过控制器实现高体积效率，该控制器包括用于使用检测算法（117/118）来检测使用输入功率升高输入功率的算法（116），该检测算法（117/118）然后减小功率输入，由此输入功率再次通过算法（116）升高。控制器实现了非破坏性低能量碰撞，包括扰动算法（119），扰动算法（119）利用周期性的瞬时脉冲功率来扰乱输入功率斜坡，以确保在瞬态功率脉冲期间激活活塞碰撞。

14. 发明授权

US07186629B2 Protecting thin semiconductor wafers during back-grinding in high-volume production 失效
标题翻译：在大量生产的背磨中保护薄的半导体晶片
公开(公告)号：US07186629B2
公开(公告)日：2007-03-06
申请号：US10716992
申请日：2003-11-19
申请人： Mark Wesselmann , Kostadin Petkov , Robert Metter , Michael S. Wisnieski , John Boyd
发明人： Mark Wesselmann , Kostadin Petkov , Robert Metter , Michael S. Wisnieski , John Boyd
IPC分类号： H01L21/46
CPC分类号： B24B37/34 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , Y10T428/31504 , Y10T428/31598
摘要： A protective disk for protecting a semiconductor wafer during processing includes an adhesive layer configured to adhere to the semiconductor wafer and a support layer coupled to the adhesive layer configured to provide strength and stiffness to the semiconductor wafer during processing. In one aspect of the invention, the protective disk is soluble in a mildly alkaline or mildly acidic solution. In another aspect, the adhesive layer comprises a high molecular weight polymer. In another aspect, the support layer comprises a polymer and a filler. The present invention may enable a robust, cost-effective, high-volume, automated process for thinning semiconductor wafers below 150 μm, and for subsequent process steps of stress relief and transfer to a dicing frame for die singulation. Additionally, the invention enables use of existing toolsets and processes to produce thinner substrates than conventionally achievable.
摘要翻译：用于在加工期间保护半导体晶片的保护盘包括被配置为粘附到半导体晶片的粘合剂层和与粘合剂层耦合的支撑层，其被配置为在加工期间为半导体晶片提供强度和刚度。在本发明的一个方面，保护盘可溶于弱碱性或弱酸性溶液。另一方面，粘合剂层包含高分子量聚合物。另一方面，支撑层包括聚合物和填料。本发明可以实现用于减薄150μm以下的半导体晶片的鲁棒，成本有效，高容量的自动化工艺，以及用于随后的应力释放和转移到切割机用于模切单元的工艺步骤。另外，本发明能够使用现有的工具集和工艺来生产比常规可实现的更薄的衬底。

15. 发明申请

US20060063470A1 SEMICONDUCTOR WAFER MATERIAL REMOVAL APPARATUS AND METHOD FOR OPERATING THE SAME 失效
标题翻译：半导体滤波材料去除装置及其操作方法
公开(公告)号：US20060063470A1
公开(公告)日：2006-03-23
申请号：US10948510
申请日：2004-09-22
申请人： John Boyd , Fred Redeker , Yezdi Dordi
发明人： John Boyd , Fred Redeker , Yezdi Dordi
IPC分类号： B24B51/00 , B24B1/00
CPC分类号： B24B7/228 , B24B37/013 , B24B49/12
摘要： A system for applying a microtopography to a semiconductor wafer (“wafer”) is provided. The system includes a chuck configured to hold and rotate the wafer. The system also includes a grinding wheel disposed over the chuck in a proximately adjustable manner relative to the wafer to be held by the chuck. The grinding wheel is configured to rotate about a central axis of the grinding wheel, wherein the central axis of the grinding wheel is non-parallel to the central axis of the chuck. The grinding wheel is capable of contacting the wafer and removing material from the wafer at the area of contact. Appropriate application of the grinding wheel to the wafer serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.
摘要翻译：提供了一种将微形态学应用于半导体晶片（“晶片”）的系统。该系统包括配置成保持和旋转晶片的卡盘。该系统还包括以相对于由卡盘保持的晶片可接近调节的方式设置在卡盘上方的砂轮。砂轮构造成围绕研磨轮的中心轴线旋转，其中砂轮的中心轴线不平行于卡盘的中心轴线。砂轮能够在接触区域接触晶片并从晶片上去除材料。将砂轮适当地施加到晶片用于在晶片表面上产生微观形貌。然后可以通过常规的化学机械平面化方法更有效地平面化所得到的微观形态。

16. 发明申请

US20050121059A1 Apparatus for controlling galvanic corrosion effects on a single-wafer cleaning system 审中-公开
标题翻译：用于控制单晶片清洁系统的电偶腐蚀效应的装置
公开(公告)号：US20050121059A1
公开(公告)日：2005-06-09
申请号：US11029821
申请日：2005-01-04
申请人： John Boyd , Mike Ravkin , Katrina Mikhaylich
发明人： John Boyd , Mike Ravkin , Katrina Mikhaylich
IPC分类号： H01L21/304 , H01L21/00 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/321 , B08B3/00
CPC分类号： H01L21/02057 , H01L21/02063 , H01L21/02074 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： A single substrate cleaning apparatus that prevents galvanic corrosion is provided. The apparatus includes a spindle configured to rotatably support a substrate. A moveable dispense arm disposed over the spindle is included. The dispense arm supports a first supply line and a second supply line. The first supply line has a first nozzle affixed to an end of the first supply line, and the second supply line has a second nozzle affixed to an end of the second supply line. The first nozzle is positioned behind the second nozzle such that a fluid dispensed from the second nozzle is dried by application of a fluid simultaneously dispensed from the first nozzle in manner that protects the substrate from galvanic corrosion.
摘要翻译：提供了防止电偶腐蚀的单个基板清洁装置。该装置包括被配置为可旋转地支撑衬底的心轴。包括设置在主轴上方的可移动分配臂。分配臂支撑第一供应管线和第二供应管线。第一供应管线具有固定在第一供应管线端部的第一喷嘴，第二供应管线具有固定在第二供应管线端部的第二喷嘴。第一喷嘴定位在第二喷嘴后面，使得从第二喷嘴分配的流体通过施加从第一喷嘴同时分配的流体而被干燥，以保护基板免受电镀腐蚀。

17. 发明申请

US20050027709A1 Method and system for native-byte form handling 有权
公开(公告)号：US20050027709A1
公开(公告)日：2005-02-03
申请号：US10931248
申请日：2004-08-31
申请人： Eric White , John Boyd
发明人： Eric White , John Boyd
IPC分类号： G06F17/30
CPC分类号： G06F17/30893 , Y10S707/99939 , Y10S707/99942
摘要： A method and system are provided for native-byte form handling, one embodiment comprising a method for encoding user-submitted native-byte form data in a client-server computer network. A user, at a client computer, can select a Uniform Resource Locator (“URL”) with his or her web browser for access to a content provider's website. When accessing the content provider's web server, the client computer can transmit client computer specific information to the web server that can be used by the web server to determine the user's locale. The web server can determine the user's (client computer's) locale using, for example, an automatic locale detection algorithm, and forward the user's locale information to a back-end server. The content provider's back-end server can generate a locale-specific form having a pre-populated, uniquely-named field, using, for example, a dynamic page generation program. The locale-specific form can be served to the user's web browser for display to the user. The user can enter, on the locale-specific form, information that he or she wishes to submit to the content provider (e.g., a request for content). The user can transmit the form-entered data, including the pre-populated, uniquely-named field, to the content provider's web server. The web server can process the user form data, and an encoding object can be created, based on the value of the pre-populated field. The user form data can then be transcoded from its original encoding to a new encoding (e.g., the content provider's scripting environment encoding) and forwarded to the content provider's scripting environment.

18. 发明申请

US20170073734A1 Diagnostic for Sepsis 审中-公开
标题翻译：诊断脓毒症
公开(公告)号：US20170073734A1
公开(公告)日：2017-03-16
申请号：US15124333
申请日：2015-03-13
申请人： Robert E. W. Hancock , Olga M. Pena Serrato , David G. Hancock , John Boyd
发明人： Robert E. W. Hancock , Olga M. Pena Serrato , David G. Hancock , John Boyd
IPC分类号： C12Q1/68 , A61K35/15 , C12N15/10
CPC分类号： C12Q1/689 , A61K35/15 , C12N15/1068 , C12Q1/6883 , C12Q2600/118 , C12Q2600/136 , C12Q2600/158 , C12Q2600/16 , C12Q2600/172
摘要： A method of diagnosing severe sepsis prior to definitive clinical diagnosis. A pattern of gene expression that correlates strongly with a future diagnosis of severe sepsis and organ failure was identified in patients who had their blood drawn at first clinical presentation. The methods comprise identifying a pattern of two or more polynucleotides, whereby the altered expression of these polynucleotides correlates with prospective and actual sepsis. Also methods of identifying agents for treating sepsis based on the characteristics of this gene expression pattern are provided.
摘要翻译：在确定临床诊断前诊断严重脓毒症的方法。在首次临床表现时抽取血液的患者中确定了与严重脓毒症和器官功能衰竭的未来诊断密切相关的基因表达模式。所述方法包括鉴定两个或多个多核苷酸的模式，由此这些多核苷酸的改变的表达与预期和实际败血症相关。还提供了基于该基因表达模式的特征鉴定用于治疗败血症的药剂的方法。

19. 发明授权

US08926789B2 Apparatus for the removal of a fluorinated polymer from a substrate 有权
标题翻译：用于从基材除去氟化聚合物的装置
公开(公告)号：US08926789B2
公开(公告)日：2015-01-06
申请号：US12750612
申请日：2010-03-30
申请人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , John Boyd , Andras Kuthi , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01L21/02 , B08B7/00
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

20. 发明授权

US08747960B2 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide 有权
标题翻译：用于工程化硅型表面以进行选择性金属沉积以形成金属硅化物的工艺和系统
公开(公告)号：US08747960B2
公开(公告)日：2014-06-10
申请号：US11513446
申请日：2006-08-30
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Johan Vertommen , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Johan Vertommen , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： C23C14/02 , H05H1/00
CPC分类号： C23C18/1651 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862 , Y02P70/605
摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.
摘要翻译：这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。还提供了用于实践上述示例性方法的示例性系统。

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